KTP CRYSTAL - AN OVERVIEW

Introduction
From the ancient days itself, human have been using crystals as gems, salts etc.
All the crystals are not available in nature and purity level of the available crystals is not
good enough. These negative points tend human to grow good quality crystals as an art.
When people realize the science behind this art product, technology in our society get
started growing. Such growth gives more devices for us. They are electrical diodes,
LEDs, Photodiodes, Radiation detectors, ICs, Transistors, Tyristors, Electro Optic
devices, Lenses, Prisms, Nonlinear optic devices, Bearings, Transducers, tape heads,
filters etc.
Among many crystals KTP crystal is a well known one. This article focuses on
KTP crystal's properties, growth techniques and fluxes.
Methods to grow KTP crystal
Among many methods, choosing an optimum unique method for growing crystals
is very important. Each method has its own requirements. Only when the requirements
are satisfied by the chosen materials then it is possible to grow the materials by that
method. For melt growth, material should melt congruently and should have no
destructive phase change [1]. The incongruent melting point causes KTP crystal unable to
grow by pure melt and hence it is found that flux and hydrothermal method are suitable
for its growth.
Byrappa have compared flux and hydrothermally grown KTP crystal. The former
one grows at high temperature and at atmospheric pressure but the latter one grows at
moderate temperature with the pressure higher than atmospheric pressure. Chang-long
Zhang et al have grown KTP crystal at temperature and pressure of 400-5400C and 120150 MPa respectively [2] in hydrothermal method. But in the case of flux growth the
growth temperature depends on the flux used. In both cases incorporation occurs in the
grown KTP crystals. Incorporation due to solvent occurs in flux grown KTP crystal and
for hydrothermally grown KTP crystal it is due to (OH-) ion [3]. A narrow valley nearly
at 2750 nm wavelength in the UV spectrum of hydrothermally grown KTP crystal
indicates the incorporation of (OH-) ion into the lattice [2, 4].
Even though hydrothermal method is very expansive, hydrothermally grown KTP crystal
has lower ionic conductivity than the flux grown one [3]. In the same way, it has the
following good properties as the damage threshold value is 9.5 GW/cm2 for 1064 nm [2],
the root-mean-squared of the gradient of refractive index is 4.15*10-6 cm-1, which
characterize the optical homogeneity, and its anti-gray tracking ability is better than the
flux grown KTP crystal [4].
Flux growth is comparatively less expansive method than the hydrothermal
method. In order to avoid the unpredictable imperfections, the seeded solution growth is
widely used rather than the unseeded solution growth . In the case of KTP crystal growth
Top Seeded Solution Growth is widely used by the crystal growers. In actual practice 700
1400 0C is the temperature involved in the growth of KTP crystal by flux method [1].

Depending upon the used flux, the applied temperature while growing KTP crystal gets
changed and this is explained in the forthcoming section in detail. KTP crystals grown by
this method have high growth rate ( 1 mm/ day) [3] than the KTP crystals grown by
hydrothermal method. Another technique named Accelerated Crucible Rotation
Technique (ACRT) is used to grow crystals uniformly and to avoid solvent inclusion [1].
Experimental setup
For flux growth, furnace is needed one and hence growth of crystals by this
method is expansive than low temperature solution growth but better than hydrothermal
method since in hydrothermal method high pressure is required in addition to high
temperature. According to Peter Mullinger and Barrie Jenkins, objective of a furnace is
To attain high processing temperature than can be achieved in the open air and this
temperature is actually controlled by temperature controllers [5]. In general, Eurotherm
programmable temperature controllers are mostly used [6] to control the temperature and
hence grow crystals.
Depending upon the fuel used, furnace is classified into many. Among them
electrical furnace is one which takes electricity as fuel. It is also subdivided into inductive
type and resistive type electrical furnace [7]. Resistive type electrical furnaces are widely
used by crystal growth community. Some people use 3 zone and some others use 5 zone
furnace for growth.
Apart from that, a new type furnace has been used by Bordui et al known as heat
pipe based furnace system for KTP crystal growth, which has a sodium filled Inconel heat
pipe gives resistance to corrosion at high temperature. This type of furnace is able to
attain spatial temperature uniformity with less variation of 1.90C throughout the
volume of the flux used and also the spurious nucleation problem is largely avoided with
the help of this furnace [8].
Next to furnace, crucible plays an important role in flux growth technique in order to
grow KTP crystal. Depending upon the used flux, growth temperature of KTP crystal
varies. It is supposed to be that KNaPo3F flux is used for KTP crystal growth then, the
growth temperature is 11000C - 10200C [9]. So it is necessary to select a suitable
crucible to withstand high temperature like this. In addition to that, it possesses the ability
to withstand solvent attack.
Platinum crucible is a better choice for flux growth because of its high melting point
(17730C) and its ability to withstand solvent attack [6]. Rhodium is used by
manufacturers to increase the strength of the platinum crucible. With this advantage, it is
easy for Rhodium ion in the crucible to diffuse into the flux and then into the KTP
crystal. This Rhodium ion diffusion is identified by colour change that is Rh incorporated KTP crystals are reddish orange in colour. In addition to that they show
decreased SHG performance for 1.064m laser source [10]. Consequently, it is better to
use pure platinum crucibles since the impurities such as Rh, Ir contaminate easily into the
flux [11] and these platinum alloy crucibles are more susceptible to solvent attack [6].
In addition to the purity of the crucible, concentration has to be given to the faults present

in the crucible. Even scratches present inside the crucible wall affect the metastable zone
width of KTP crystal, magnitude of which is a measure of stability of flux [12]. Low
volatility is one of the requirements for flux selection and this would be relaxed by
crucible if it is covered or welded with lid [6]. Thus scratches in the crucible as well as
the lid of the crucibles can give a significant effect over the physical properties of the flux
used for KTP crystal growth.
In the case of hydrothermal growth, autoclave is first and foremost thing.
Depending upon the applied temperature and pressure, materials needed to fabricate
autoclave are different. According to H. L. Bhatt, sealed glass is suitable choice for the
temperature range of 2500C - 3000C and pressure of up to 6 atm [6]. Moreover steel
autoclaves are used in practice and this causes contamination problem [1]. In order to
avoid this problem, liners are used inside the autoclaves. Chang-long Zhang et al have
used gold liners for avoiding impurity incorporation and got succeeded. Only less than 6
ppm concentration of impurity present in the KTP crystal grown using this gold lined
autoclave [4].
Flux
It is noteworthy, to understand the physical properties of flux, while growing KTP crystal
through flux method. Generally, flux should have low volatility, viscosity and possesses
well separated melting and boiling points. Moreover, it should not react with the crucible
material and should be easily leachable in other words every flux should have its own
solvent in order to separate the grown crystal from it [6]. Selection of suitable solvent is
an important job since it can affect growth properties and also the nature of KTP crystal.
Number of fluxes introduced for KTP crystal growth are polyphosphate [13,14], tungstate
[15,16,17], molybdate [15], phosphate/ sulfate [11] and potassium sodium fluoride
(KNaPo3F flux) [9] fluxes. K4P2O7 (K4), K6P4O13 (K6), K8P6O19 (K8) and
K15P13O40
(K15)
are
examples
of
polyphosphate
self
flux
and
3K2WO4.3KPO3.Li2WO4, K2WO4.P2O5, K2O-P2O5-TiO2-WO3 for tungstate flux
and 3K2MoO4.3KPO3.Li2MoO4 for molybdate flux.
Growth process equation for various fluxes are given below,
For K6 flux,
[18]
For 3K2WO4.3KPO3.Li2WO4 flux,

[15]
For K2WO4.P2O5 flux,
[16]

For K2O-P2O5-TiO2-WO3 flux,

[17]
For 3K2MoO4.3KPO3.Li2MoO4 flux,

[15]
For KNaPo3F flux,
[9]
It is straightforward that the polyphosphate fluxes contain only potassium,
phosphorus and oxygen atom itself and hence the presence of foreign ion in KTP crystal
is minimized with the usage of polyphosphate fluxes. Comparison of solubility of
polyphosphate fluxes have given by G.M.Loicono et al and the derived entalpy of
dissolution for K4, K6, K8, K15 fluxes are 4.8, 4.4, 4.5 and 3.3 kcal/mol respectively
[13].
High viscosity of self fluxes affects the growth of KTP crystal. Having this
problem in mind Jing Hu and Zhanggui Hu introduced NaF, KF and BaF2 as additive for
K8 flux. On comparing with other introduced fluxes, K8-BaF2 volatility curve is parallel
to that of the K8 flux whereas for other fluxes this curve is very odd. Moreover, K8-BaF2
flux shows reduced viscosity than K8 flux for the temperature range of approximately
8200C-10000C.
Even though 1.48 mol % Ba2+ is doped into KTP crystal, there is no change in
colour was observed for grown crystal of dimension 19*44*21 mm3 and its optical
property is excellent [14].
For different molar fractions of K2SO4, K6 flux (xK6:yK2SO4), is modified as
1:3, 1:1, 2:1, 4:1 and 1:0 by R. J. Bolt et al. Among the all fractions, 4:1 gives better
results in the point of view of least sulfur ion incorporation. Colourless crystals of size up
to 30*30*15 mm3 have been harvested with repeatability for 4K6:K2SO4 flux (4:1) [11].
In this case the growth temperature range is 9250C -7900C [11] which is more or less
equal to the temperature range of K8-BaF2 flux, for which the growth temperature is
9250C -8100C [14].
In the group of tungstate flux 3K2WO4.3KPO3.Li2WO4 fluxs volatility and
viscosity is low in nature [15]. Melt produced by K2WO4.P2O5 flux is very fluid and
didnt have any glass formation [16]. In the case of 3K2WO4.3KPO3.Li2WO4 flux,
addition of Lithium enhances the fluidity [15]. On comparing K2O-P2O5-TiO2-WO3
flux to the above two fluxes (3K2WO4.3KPO3.Li2WO4 and K2WO4.P2O5) the
temperature range for getting single stable phase of KTiOPO4 is large in
3K2WO4.3KPO3.Li2WO4 flux and small in K2O-P2O5-TiO2-WO3 flux. These
temperature range for 3K2WO4.3KPO3.Li2WO4, K2WO4.P2O5, K2O-P2O5-TiO2WO3 fluxes are (10200C-6500C) [15], (1000 0C-7000C) [16] and (930 0C-7000C) [17]

respectively. Growth rate of KTP crystal for 3K2WO4.3KPO3.Li2WO4 and K2O-P2O5TiO2-WO3 fluxes are (0.5-1mm/side-day [15] and 0.9 mm/day [17] respectively.
3K2MoO4.3KPO3.Li2MoO4 flux is produced by just changing starting material
that is MoO3 instead of WO3 in the reaction mechanism for KTP in
3K2WO4.3KPO3.Li2WO4 solvent. According to L. K. Cheng et al physicochemical
properties such as melting point, volatility and viscosity are similar for this two fluxes.
F. Joseph Kumar et al have derived enthalpy of solution (Hs) for different fluxes
with the help of the data of Bordui et al, Loiacono et al and Ballman et al and got 4778,
4391, 4535, 3336, 105000 cal/mol-K for K4, K6, K8, K15 and 3K2WO4.P2O5 fluxes
respectively [12]. Convert this into SI unit, we get 19.99, 18.37, 18.974, 13.957, 43.932
kJ/mol-K. For 3K2WO4.3KPO3.Li2WO4 flux, it is found from the literature Hs value
is 43.9 kJ/mol-K [15]. Obviously, for the above mentioned self fluxes, Hs value lies
between 10 and 20 kJ/mol-K and for the above two tungstate fluxes, Hs value is more
or less the same.
In addition to the Hs value, F. Joseph Kumar et al theoretically found surface
energy and metastable zone width at 1223 K for the above mentioned fluxes. The derived
surface energy values are 5.572, 5.450, 5.039, 4.277, 5.781 mJ/m2 for K4, K6, K8, K15
and 3K2WO4.P2O5 fluxes respectively and their metastable zone width are 6.33, 6.67,
5.73, 6.09, 3.050C respectively and it is concluded that K6 flux has large metastable zone
width and hence it is highly stable comparable to other given fluxes [12].
J.C.Jacco et al found out PbF2 flux modifier is better than the B2O3, CaO, V2O5,
KF and PbO flux modifiers. Even it is better, it is also produces significant incorporation
into the grown crystal which is the drawback of this modifier [18]. In the case of
Phosphate/sulfate flux (4K6:K2SO4) it is believed that sulfate ion (SO42-) itself act as a
flux modifier by breaking the titanate chain in the flux and hence reducing the viscosity
of flux [11].
Depending upon the used flux, generally water [9, 18] and hot water [16] are used
as a solvent for KTP crystal in order to separate it out from the flux. It is very important
since these solvents are the tool to get the grown crystal out from the flux unless there is
no use of this method of crystal growth.
Structure of KTP crystal
The KTP crystal belongs to orthorhombic system, with lattice constants a =
12.823 , b = 6.414 , c = 10. 589 . C2v mm2,
-pna21 is the point group and
the space group of this crystal.
When considering each unit cell of the KTP, it possesses two non-equivalent Ti
lattice sites (Ti(1) and Ti(2)), K lattice sites (K(1) and K(2)) and P lattice sites (P(1) and
P(2)) and also ten non-equivalent O lattice sites (O(1), O(2)O(10)). Ti and O form
distorted TiO6 octahedron and P and O form the PO4 tetrahedron in its crystal structure
[19].
Effect of seed orientation

Seed orientation is a tool in crystal growth as it solves many problems when the
grower chooses the orientation properly. In the case of KTP crystals, <010> oriented seed
grown crystals have lower dislocation density and smaller capping region than the
crystals grown using <001> seed orientation under the same cooling rate (0.10C/h)
rotation rate (70 RPM ) and saturation temperature (9600C) for K6 flux [20]. In addition
to this, the same <010> seed orientation used to minimize the formation of inclusion
under the following growth conditions as cooling rate = 0.5-1.50C/day, rotation rate =
120 RPM and saturation temperature = 9720C and this is done for K6 flux [21]. For
tungstate flux (3K2WO4.3KPO3.Li2WO4) L. K. Cheng et al found {201} seeding gave
the best results than the {100} and {011} oriention [15].
Physical properties
Single crystal XRD has gave information about the lattice constant values and
space group and point group of KTP (which are mentioned earlier).
While taking UV studies for KTP crystal the incident beams illumination
direction slightly changes the UV-cut off wavelength. For K6 flux grown KTP, if the
incident beam was parallel to [010], [100] direction of KTP crystal, then it is found that
the UV- cut off wavelengths are 340nm [11] and 350 nm [18] respectively. Independent
of the flux, in some cases such as 4 K6:K2SO4, K6, 3 K2WO4.3KPO3.Li2WO4,
3K2WO4.P2O5 flux grown KTP crystal shows the UV- cut off wavelength is 350nm
[11,18,15,16]. 80% [14], 85% [22] of transmission was observed in K8-BaF2 flux grown
and K6 flux grown KTP crystal respectively. C.V.Kannan et al found out absorption
coefficient () at 532nm wavelength and the band gap of K6 flux grown KTP crystal as
6.4*10-3 cm-1 and 3.43 eV respectively [22].Relation between the absorption coefficient
and the incident photon energy is also derived by C.V.Kannan et al.
Optical transmission spectrum of KTP crystal grown by different methods such as ACR
(Accelerated Crucible Rotation method), HTM (Hydrothermal method), IFM (Improved
Flux Method) are compared by Shen Dezhong and Huang Chaoen and all the three
spectrum are more or less the same except the absorption peak at 2.7m for
hydrothermally grown KTP crystal [23]. The same effect was observed by Chang-long
Zhang et al at 2.75m [2].
From the UV analysis, the ambient suitable for the growth of KTP crystal is found
out as nitrogen ambient than the oxygen ambient (80% O2) and the air (21% O2)
ambient. Since in the oxygen ambient, it is easy to oxidize the platinum, which is the
crucible material and hence the formed PtO2 is incorporated into the growing crystals
and finally increases the absorption coefficient [24].
Laser interferometer is an instrument used to scale optical homogeneity indirectly
by measuring root-mean-square of the gradient of refractive index of the crystal. Mostly
for KTP crystal this value is of the order of 10-6 cm-1 [4,14] and hence its optical
homogeneity is conformed. The following table gives the information about this RMS of
the gradient of refractive index of KTP crystals grown under different conditions.
Used instrument: WYKO RTI 4100 Laser interferometer; Source: He-Ne laser (633 nm)

S.N
O
1
2

Method of growth

Flux
/ root-mean-square
Refractive
Nutrient used of the gradient of index
refractive index
Flux growth (TSSG K8-BaF2 flux 1.94*10-6 cm-1
1.77
technique)
Hydrothermal method Crushed flux 4.152*10-6 cm-1
1.77
grown KTP
crystals
(nutrient)
Flux growth (TSSG K6 flux
12.211*10-6 cm-1 1.77
technique)

Reference
14
4

14

On seeing this table, the RMS of the gradient of refractive index of flux grown KTP
crystal is approximately three times greater than that of hydrothermally grown KTP
crystal. In the above all cases refractive index of KTP crystal is 1.77 [4,14].
Sellmeier coefficients of KTP crystal at 200C and 300C are given by Gorachand
Ghosh and Chang-Long-Zhang et al respectively.
For type-II frequency doubling at 1.06 m, 1.325 m wavelengths, the phase
matching angle is found to be = 2100.50 (X-Y plane), = 900 (Z axis) and = 900
(X-Y plane), = 460 (Z axis respectively) respectively and this is for the tungstate flux
grown KTP crystal at room temperature [16]. The phase matching angle is found to be
23010 off the X-axis for the K6 flux grown KTP crystal and also for this crystal the
maximum conversion efficiency is found out as 58% (without any antireflection coating)
at an approximate intensity of about 140 mW/cm2 [22].
On comparing polycrystalline KTP (produced through solid state reaction) and flux
grown KTP crystal to the polycrystalline KTP grown under oxygen atmosphere,
polycrystalline KTP grown under oxygen atmosphere gives relatively large SHG
efficiency (4.8 times of urea) for Q switched Nd:YAG laser [25]. In addition to the
above, the SHG efficiency of K8-BaF2 flux grown KTP crystals have same SHG
efficiency like K6 flux grown KTP crystals for 1064.2 nm wavelength [14]
IR spectra of KTP crystal was given by J.C. Jacco. According to him, absorption
peaks between 1250 and 850 cm-1 correspond to vibrations of PO4 groups and the peaks
at 820, 785, 712 cm-1 correspond to Ti-O vibrations of the distorted TiO6 octahedra and
also the peaks in the region between 660 and 350 cm-1 correspond to the splitting of the
degenerate PO4 modes [26].
Due to the any one of the following modes, PO4 tetrahedra internal modes, the TiO6
octahedra internal modes, combination and overtone bands of PO4 groups, OH- ion
modes and lattice modes, vibrations have been occurred in KTP crystals [27] and this was
given by K. Vivekanandan et al for both flux grown and tungstate grown KTP crystal.
Influence of flux in the Raman spectra is observed as shifts in the internal mode
frequencies of TiO6 and PO4 towards lower wavenumber region for tungstate flux than
the phosphate flux grown KTP crystals [27].
Polarization of input and stokes light [28], Pressure [29], ac and dc electric field

[30] are the factors affecting the Raman spectra of KTP crystal and this was proved by G.
A. Massey et al, G. A. Kourouklis et al and M. J. Bushiri et al respectively.
Phase change in KTP crystal is induced by pressure and this change of phase is
observed by taking Raman study as a medium.It is straightforward from high frequency
Raman spectrum, at nearly 5.5GPa and 10GPa, discontinuous behavior is observed which
is believed to be due to phase change of KTP crystal from ferroelectric to antiferroelectric
and from antiferroelectric to paraelectric phase respectively [29].
Both dc and ac fields also play their own role on the Raman spectra of KTP
crystal. Mainly intensity variation is observed due to these field applications. After 30
minutes application of the dc fields of 26 V/Cm, 38 V/Cm along polar axis shows
reduction and large reduction in intensity respectively at the Raman bands of KTP crystal.
In contrast to that, an ac field of strength 20 V/Cm and frequency of 1 kHz enhances the
intensity slightly in the Raman spectrum of KTP crystal which was taken 2 hours later the
application of this field [30].
In order to reveal the mechanical properties of KTP crystal, it is analyzed both by microand nanoindentation. Mohs hardness value of KTP crystal is 5, which is half the value of
diamond (Mohs hardness values for diamond is 10). Anisotropy in hardness value of KTP
for various planes is due to difference in recticular face density and nonidentity of the
bonding strength in the planes and it is maximum for (100) and (011) faces. By
nanoindentation method hardness value and the elastic modulus value is found out as HN
= 9.48 0.36 GPa, EN =142 1 GPa respectively for KTP [31].
With the help of computerized adiabatic calorimeter, heat capacity of KTP was
analyzed in the range of 60-360 K. From this study is is known that KTP crystal is stable
within 60-360 K thermodynamically [32].
Physical properties such as mechanical strength, electrical conductivity and
optical absorption are always influencing the performance of KTP crystal in devices and
hence it is necessary to find defects and their distribution in the crystal [33]. Etching
provides an easy way to check the quality of the grown KTP crystal by analyzing the etch
pits in the crystal.
As KTP crystal is insoluble in water, on seeing literature [17,23,34] HCl is found
out as etchant for KTP crystal . Different concentrations (37% HCl [34], 20% HCl [17])
of HCl is used for this etching purpose. Generally etching time and temperature are the
parameters which are changeable as per the experimentalist wish.
Orientation of etch pits along a particular direction was observed by Cheng Gan
Chao et al [17] and Shen Dezhong et al [23] on (020) face and [110] plane respectively.
From the above result, it is obvious that the grown KTP crystal possesses no domains on
the above mentioned face and plane. Moreover, dislocation wall is observed on the (020)
face.
Both spike edge pits and non-spike edge pits are presents in the (100) face of KTP
crystal. Middle of the (100) face have etch pits without any spike, but near the edge of
this face dislocation tend to turned into the crystal at an angle (range 300 500) and

hence the spike-like etch pits were formed. The authors also confirms the presence of
spike-like etch pits with the help of SEM. Big hole in the SEM image is an indication of
presence of spike-like etch pits [34].
According to Shen Dezhong et al, dislocation density of KTP for [110] plane is
3*103/cm2 [23]. At the same time variation in dislocation density is observed by R.J.
Bolt et al in KTP for different faces and it can vary from 0 - 20,000/mm2 [34] depending
upon the face.
For flux grown KTP crystal, at room temperature the piezoelectricity, elasticity
and dielectric permittivity tensors, have been completely determined by David K. T. Chu
et al. In addition to this P-E-D matrix, piezoelectric and electromechanical coupling
coefficients and also the temperature dependence of elastic constant and the thermal
expansion coefficients are also determined. The determined piezoelectric coupling
coefficients are kt= 34% (along z axis), k24=16% (along y axis) and k15=14% (along x
axis) and this is for longitudinal mode and also it is found comparatively larger than RTP
and RTS crystals. The temperature dependence of elastic constants and the thermal
expansion coefficients of KTP crystal are given below. After analyzing, it is obvious that
KTP crystal possesses less temperature dependence than its isomorphs such as RTA and
RTP crystals so may be suitable for frequency control and signal processing applications.
Moreover, the electromechanical coupling coefficient kt is 35% for the flux grown KTP
crystal [35].

Temperature
dependence
of
elastic constants -->
----220
Thermal expansion 11
coefficients -->
----

6.8

-134
22

-143
33

-100
----

9.6

-1.3

----

List of determined temperature dependence of elastic constants and thermal expansion

coefficients.
Gray tracking formation is a major problem in KTP crystal investigated by many
researchers and the factors responsible for this is also found out. Humidity and
temperature of used gases [36] and concentration of hydroxyl [37] in KTP crystal while
annealing affect the gray tracking. Only the increased humidity of gases decrease the gray
tracking but not the types of gases [36] used at annealing.
Increased hydroxyl concentration in KTP crystal decreases its gray track susceptibility
[37]. It is experimentally observed and tabled as,
KTP
Susceptibility @ 150M W/cm2
CRYSTAL (as [% /hour]
named
by

Content of hydroxyl
[mg/g]

author)
#F
#B
#D

0.48
0.13
0.09(min. value in the given
four)
5.3(max. value in the given four)

#G

0.010
0.011
0.078(max. value in the given
four)
0.008 (min. value in the given
four)

It is also obvious that, while annealing the crystal in air atmosphere, the hydroxyl
comes into the crystal and hence the gray track susceptibility gets decreased. There is
another way to get the hydroxyl ion into the crystal lattice is hydrothermal growth. It may
be the reason that the hydrothermally grown KTP crystal possesses high anti-gray track
ability [4] than the flux grown KTP crystal.
Moreover, gray tracking also depends on the direction of polarization whether it is
parallel or perpendicular to the z axis of the KTP crystal. Experimentally it is proved that
gray track susceptibility is one order magnitude less for z polarization irradiation than
the z polarization irradiation for KTP crystals [38].
Conclusion
In this article, some of the properties of KTP crystal is discussed. This may be
helpful to know why KTP crystal is used in more applications.
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