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General Aptitude Q. No. 1 5 Carry One Mark Each

1. Choose the word most similar in meaning to the given word:

Educe

 (A) Exert (B) Educate (C) Extract (D) Extend Answer: (C) 2. If log x (5/7) = -1/3, then the value of x is (A) 343/125 (B) 125/343 (C) -25/49 (D) -49/25 Answer: (A)

Exp:

3.

5

7

x

1 3

7 5

x

1 3

Operators

,

and

  7 5   

3

 

x

2.74

aredefined by: a

b

 

a

a

b b

;a

 

b

b b

 

a a

;a

b

 

ab.

Find

the

value

66  6666 .
(A)
-2
(B) -1
(C)
1
(D) 2
(C)
66
 6
60
5
66
6 
Exp:
66
 6
72
6
66
 6
72
6
6 
66
66
 6
60
5
5
6
 1
(666)(66
6)
6
5
4.
Choose the most appropriate word from the options given below to complete the following
sentence.

The principal presented the chief guest with a

, as token of appreciation.

 (A) momento (B) memento (C) momentum (D) moment Answer: (B)

5. Choose the appropriate word/phrase, out of the four options given below, to complete the following sentence:

Frogs

 (A) Croak (B) Roar (C) Hiss (D) Patter Answer: (A)

Exp:

Frogs make ‘croak’ sound.

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Q. No. 6 10 Carry Two Marks Each

6. A cube of
proportion
visible.
side 3 units
is formed using a set
of smaller
cubes
of
side
1 unit. Find the
of the number of faces of the smaller cubes visible to those which are NOT
(A)
1 : 4
(B)
1
:
3
(C)
1 : 2
(D)
2 : 3
(C)
Exp:
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1

Number of faces per cube = 6

Total number of cubes = 9×3 = 27

Total number of faces = 27×6 = 162

Total number of non visible faces = 162-54 = 108

 ∴ Numberof visible faces  54  1 Numberof non visible faces 108 2

7. Fill in the missing value

6
5
4
1
7 9
1 2
1
4
1 4 2
8 7 5
2 2 1
3
3
3

Exp:

3

Middle number is the average of the numbers on both sides.

Average of 6 and 4 is 5

Average of (7+4) and (2+1) is 7

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Average of (1+9+2) and (1+2+1) is 8

Average of (4+1) and (2+3) is 5

Therefore, Average of (3) and (3) is 3

8. Humpty Dumpty sits on a wall every day while having lunch. The wall sometimes breaks. A person sitting on the wall falls if the wall breaks.

Which one of the statements below is logically valid and can be inferred from the above sentences?

 (A) Humpty Dumpty always falls while having lunch (B) Humpty Dumpty does not fall sometimes while having lunch (C) Humpty Dumpty never falls during dinner (D) When Humpty Dumpty does not sit on the wall, the wall does not break Answer: (B)

9.

The following question presents a sentence, part of which is underlined. Beneath the sentence you find four ways of phrasing the underline part. Following the requirements of the standard written English, select the answer that produces the most effective sentence.

ranks as one of the leading causes of death

(A)

(B)

rank as one of the leading causes of death

Tuberculosis, together with its effects, ranks one of the leading causes of death in India.

 (C) has the rank of one of the leading causes of death (D) are one of the leading causes of death Answer: (A)

10. Read the following paragraph and choose the correct statement.

Climate change has reduced human security and threatened human well being. An ignored reality of human progress is that human security largely depends upon environmental security. But on the contrary, human progress seems contradictory to environmental security. To keep up both at the required level is a challenge to be addressed by one and all. One of the ways to curb the climate change may be suitable scientific innovations, while the other may be the Gandhian perspective on small scale progress with focus on sustainability.

 (A) Human progress and security are positively associated with environmental security. (B) Human progress is contradictory to environmental security. (C) Human security is contradictory to environmental security. (D) Human progress depends upon environmental security.

(B)

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Electronics and Communication Engineering

Q. No. 1 25 Carry One Mark Each

1. A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

 (A) Both the P-region and the N-region are heavily doped (B) The N-region is heavily doped compared to the P-region (C) The P-region is heavily doped compared to the N-region (D) An intrinsic silicon region is inserted between the P-region and the N-region Answer: (A)

2. A silicon sample is uniformly doped with donor type impurities with a concentration of

10

16

/ cm

3

. The electron and hole mobilities in the sample are

1200cm / V s and 400cm

The charge of an electron is

2

2

/ V s respectively. Assume complete ionization of impurities.

The resistivity of the sample in cmis

1.6

10

19

C.

Exp:

0.52

1

1

P

N
q
N
D
n
1
16
 19
10
1.6
10
1200
0.52

cm
G
s

A unity negative feedback system has the open-loop transfer function

3.

K

s

s

1



s

3

.

The value of

12

the

k

s

s

1



s

3

0

gain K (>0)

Exp:

C.Eis1

at

which the root locus crosses the imaginary axis is

s

3

4s

2

3s k 0

By using Routh Table, s 1 row should be zero. For poles to be on imaginary axis

12

4

k

0

; k should be 12.

4. Suppose

A

and

B

are

PA0 and PB0. Let A and B PA PA   BBPAPAPBPB

statements is FALSE?

(A)

(C)

two

events with probabilities

be their complements. Which one of the following

independent

(B) PA \ BPA

(D)

PA B PAPB

Exp:

(C) We know that A and B are independent then P(A∩B) = P(A) P(B)

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A and B are independent then P(A/B) = P(A) and P(B/A) = P(B)

Also if A and B are independent then AandB are also independent

i.e., PA BPAPB

(A), (B), (D) are correct (C) is false

Since P(AB) = P(A)+P(B)-P(A∩B) = P(A)+P(B)-P(A)P(B)

5.

The waveform of a periodic signal x(t) is shown in the figure.

x
t
3
2
1
4
4 3
1
2 3
t
3
g
 
t  1  
t
 x
A
signal
g(t)
is
defined
by
2
 .
The
average
power
2
1
x(t)
lim
 
1
3t
2 dt
Exp:
Power of
T 
3
1

9

3

t

3

9

3

2

.

3

3

1

1

2 Watts

of

g(t)

is

6. In the network shown in the figure, all resistors are identical with R 300. The resistance

Rab in of the network is

a
R
R
R
R
R
R
R
R
R
R
R
R
R
R ab

b

R

R

R 300

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 Exp: R R 2 R 2 R R R R eq R R 2 R 2 R By bridge condition R eq 2R R R 2R R eq  R 3  100  7.    2y 3z 1   3y 4z  1 and Consider a system of linear equations: x x  2x  4y  6z  k.

The value of k for which the system has infinitely many solutions is

2

 Exp: x-2y+3z = -1 x-3y+4z = 1 -2x+4y-6z = k

Augmented matrix A B

R

2

1

0

0

R

2

1

0

2

3

1

0

R

1

, R

1

K

2

2

3

 

R

3

 

1

1

2

2R

1

2

3

4

3

4

6

1

1

K

 

The system will have infinitely many solutions if p(A/B) = p(A) = r < number of variables

k-2 = 0

k = 2

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 8. The polar plot of the transfer function G  s   10s  1 for 0  s  10 (A) first quadrant (B) second quadrant (C) third quadrant (D) fourth quadrant Answer: (A)

Exp:

G

s

10s

1

s

10

Put s j

G j 

10

j



1

 

j



10

, 0, M M 1 10 0 0

will be in the

j
10 
0

So, zero is nearer to imaginary axis. Hence plot will move clockwise direction.

9. Let z x iy be a complex variable. Consider that contour integration is performed along the unit circle in anticlockwise direction. Which one of the following statements is NOT TRUE?

(A) The residue of

(B)

C

2

z dz 0

z 1 is 1/ 2

z

2

1

at z

(C)

1

1 z dz

2

i

C

1

(D) z (complex conjugate of z) is an analytical function

Exp:

f

(D)

z

z

 

x

iy



1and v

u

u

x

x,v

y

x

0

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u

z is not analytic

y

0

and v

y



1

u

x

v

y

i.e., C

R equations not satisfied

(A)

(B)

z = 1 is a simple pole

Residue

2

z 1   

   z

at z

1 is

lim

z

1

z

1

z

.

z

2

1

lim

z

1

Since z 2 is analytic everywhere

Using Cauchy’s integral theorem,

C

2

z dz 0

y

z

1

z

1

2

10. Consider the signal stmtcos2fctmˆ t2fctwhere mˆ tdenotes the Hilbert

transform of m(t) and the bandwidth of m(t) is very small compared to

(A)

(B)

(C)

f

c

. The signal s(t) is a

high-pass signal low-pass signal band-pass signal double sideband suppressed carrier signal

(D)

(C) Given s(t) is the equation for single side band modulation (lower side band).

Thus it is a Band pass signal.

Exp:

11. For the circuit with ideal diodes shown in the figure, the shape of the output vout for the

given sine wave input vin will be

0
0.5T

T

 in
out

(A)

(C)

0
0.5T

T

0
0.5T
T
(C)

(B)

(D)

0
0.5T
T
0
0.5T
T

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 Exp: The circuit can be re drawn as a d   D1   Vo R   b D2 D2 c During positive pulse, both diodes are forward biased. So output pulse of +ve polarity is produced. As polarity at ‘d’ and ‘c’ is given opposite to input terminals, hence +ve pulse is inverted. During negative pulse, both diodes are reverse biased. So, V 0 = 0V 12. The result of the convolution xtt  t0  is
xt  t0 
x(t)* t  t
 t0 
(C) xt  t0 
(D) xt  t0 
(A)
(B) xt
(D)
 x(t)*(t  t )
0
0
Exp:
 
x
t
t
t

0
 
x
t
t
0

13. The value of p such that the vector



2

 



3



1

is an eigenvector of the matrix

Exp:

AX

X

 

14

4

P

1

2

4

2

1

10

12

P

36

7

    3

2

  

12



 1



 2



3







1

2

 

P

and 3



36

 

7



Equation 2 givesP

7

i.e.,





12

24

P

 

17



2

4

p

14

1

2

4

2

  10  

1

is

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V and V
1
4
2
14. In the given circuit, the values of
respectively are
I
V2
5A
4
4
2I
V1
(A) 5V, 25V
(B) 10V, 30V
(C) 15V, 35V
(D) 0V, 20V
 Answer: (A) Exp: By nodal analysis 5   I I   2I  0 4I  5 I  5 A 4 V 1 4I   5volts V  4(5)  V 2 1  20  V  25 volts 1 15. In an 8085 microprocessor, the shift registers which store the result of an addition and the overflow bit are, respectively
 (A) B and F (B) A and F (C) H and F (D) A and C Answer: (B)
 Exp: In an 8085 microprocessor, after performing the addition, result is stored in accumulator and if any carry (overflow bit) is generated it updates flags. 16. Negative feedback in a closed-loop control system DOES NOT (A) reduce the overall gain (B) reduce bandwidth (C) improve disturbance rejection (D) reduce sensitivity to parameter variation Answer: (B)

Exp:

Negative feedback in a closed loop

 (i) Increases bandwidth (ii) Reduces gain

(iii) Improve distance rejection

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17. A 16 Kb (=16,384 bit) memory array is designed as a square with an aspect ratio of one (number of rows is equal to the number of columns). The minimum number of address lines needed for the row decoder is

Exp:

7

Generally the structure of a memory chip = Number of Row × Number of column

= M×N

  The number of address line required for row decoder is n where M = 2 n or n = log 2 M  As per information given in question : M = N So M×N = M×M = M 2 = 16k = 2 4 ×2 10  M 2 = 2 14  M = 128  n = log 2 128 = 7

18. A function

2

f(x) 1x x

3

is defined in the closed interval [-1, 1]. The value of x, in the

(B) -1/3
(C) 1/3
(D) 1/2
(B)

open interval (-1, 1) for which the mean value theorem is satisfied, is

(A) -1/2

By Lagrange’s mean value theorem

Exp:

f '



x



f

1

f

1

2

1



1

2

1

-2x+3x 2 = 1

3x 2 -2x-1 = 0

So x = 1, -1/3

x= -1/3 only lies in (-1,1)

19. The electric field component of a plane wave traveling in a lossless dielectric medium is

. The wavelength (in m) for the wave is

given

by

8.885

z,t

E

2cos

z
z,t
y 2cos
10 t
8
  
2
  
z
8
10
t
a
y
2

V/ m

Exp:

E

2

 
2
2
 8.885m

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20. In the circuit shown, the switch SW is thrown from position A to position B at time t = 0. The energy in Jtaken from the 3V source to charge the 0.1F capacitor from 0V to 3V is

SW

3V

120

B

A t 0

0.1F

(A) 0.3

(B) 0.45

(C) 0.9

(D) 3

Exp:

(C) So the capacitor in initially uncharged i.e. V C (0) = 0

The capacitor will be charged to supply voltage 3V when the switch is in position B for ∞ time.

So we need to find capacitor voltage

 
t
V

t
V

V

0
V

e
c
c
c
c
 
t
 
3
3e
 6

RC
120
0.1
10
12
sec
dV
c
i
C
c
dt

d
 6
 
t
0.1
10
3
3e
dt
3
 0.1
0.3
 
t
 
t
e
e

12

So instantaneous power of source = V(t)i(t)

P
 
   0.3 12
0.9
t
3
.e
 
t
e
 
t
 
12
E  
Pd

t
0
0.9 e
 
t
dt
12
0
0.9
0.9
 
t
 
e
  
12
0
12
0.9
 6
12
10
12
0.9
J

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21. In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6V. The output

voltage

V

0

(in volts) is

1k

  10V 1k V0 

Exp:

5

Zener is not Breakdown

Hence

V

o

10

1

2

5V

22.

Consider a four bit D to A converter. The analog value corresponding to digital signals of values 0000 and 0001 are 0V and 0.0625V respectively. The analog value (in Volts) corresponding to the digital signal 1111 is

0.9375
Analog output
15

Analog output = [Resolution] × [Decimal equivalent of Binary]

  0.0625 0.9375

Exp:

23. In the circuit shown, at resonance, the amplitude of the sinusoidal voltage (in Volts) across the capacitor is

10cos
 t
Volts
VC  QV90
25
Exp:
 L
1
L
10
Q
0
R
R
C
4

V C = 25-90°

|V C | = 25V

4
0.1mH
2.5

1F

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24 A sinusoidal signal of 2 kHz frequency is applied to a delta modulator. The sampling rate and step-size of the delta modulator are 20,000 samples per second and 0.1V, respectively. To prevent slope overload, the maximum amplitude of the sinusoidal signal (in Volts) is

 1 1 2 (A) 2 (B)  (C)  (D) 

Exp:

(A)

.T

s

x(t)

max

x(t)

E

m

sin

2

f

d
dt

x(t)

max

E

m

.2

f

m

0.1

20,000

E

m

.2 .2000

E

m

1

2

25.

conductor and r is the radial distance from the conductor?

Consider a straight, infinitely long, current carrying conductor lying on the z-axis. Which one of the following plots (in linear scale) qualitatively represents the dependence of H on r,

where H is the magnitude of the azimuthal component of magnetic field outside the

A

H

C

H

Exp:

H

(C)

I

2

r

r

r

r is the distance from current element.

H

1

r

B

D

H

H

r

r

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Q. No. 26 55 carry Two Marks Each

26. The input X to the Binary Symmetric Channel (BSC) shown in the figure is ‘1’ with probability 0.8. The cross-over probability is 1/7. If the received bit Y = 0, the conditional probability that ‘1’ was transmitted is

X
Y
0
67
0
P[X  0]  0.2
17
17
P[X 1]  0.8
1
67
1
0.4
X
Exp:
0
617
Y
0
Px  0 0.2
Px 1 0.8
1/ 7
1/ 7
1
1

P

P

x

y

P{x

P{y

P

1/ y

0

0 / x

1

1}

0}

0.8

0.2

x

1/ y

6 / 7

  P  y  0 / x  1  P x  1  P{y  0} 1  7 6  0.8  1  2 7 7 7 1  0.8  0   7 2  0.4 7

27. The transmitted signal in a GSM system is of 200 kHz bandwidth and 8 users share a common bandwidth using TDMA. If at a given time 12 users are talking in a cell, the total bandwidth of the signal received by the base station of the cell will be at least (in kHz)

400

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 Exp: Since GSM requires 200 KHz and only 8 users can use it using TDMA, 9 th another 200 KHz. user needs th , 10 th , 11 th , 12 th user can use another 200 KHz bandwidth on time share basis. Thus for 12 user we need 400 KHz bandwidth. 9 28. For the discrete-time system shown in the figure, the poles of the system transfer function are located at
Xn
Yn
 1
5
6
6
Z 
1
Z 
1
1
1
1
1 2 , 3
2, 3
(A) 2, 3
(B)
(C)
2
, 3
(D)
(C)
Exp:
2
Y(z)
1
z
H(z)
2
X(z)
5
z
5
1
2
1
1
z
z
z
6
6
6
6
2
z

So, poles are

z

1

2







1 1

z

2

, z

3

z

.

1

3

29. The circuit shown in the figure has an ideal opamp. The oscillation frequency and the condition to sustain the oscillations, respectively, are

(A)

(C)

1

CR

and R

1

1

2CR

(D)

and R

R1

R 2
out
2C
R
C 2R
1
R
and R
2
(B)
CR
1
1
R
and R
1
2
(D)
2CR
1

4R

2

4R

2

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Exp:

Frequency of Wein bridge oscillator is

doubled so, frequency becomes half.

 

0

1

2RC

 

0

1

RC

, but in the question time constant is

 2R  1  2  R  j  c R  1 R 2  2j  c  j R  1 R  jR 2j  c Z 2 1  Z 1  Z 2 5 R 1 5   R  4R R 2 1 2

Z

Z

1

2



1

jR

30.

A source emits bit 0 with probability 1 3 and bit 1 with probability 2 . The emitted bits are

3

communicated to the receiver. The receiver decides for either 0 or 1 based on the received value R. It is given that the conditional density functions of R are as

f

R|0

(r)

1

,

 

3

x

1,

4

0, otherwise,

and f

R|1

(r)

1

6

,

 

1

x

5,

0, otherwise.

The minimum decision error probability is

(A) 0

(B) 1/12

(D)

(C) 1/9

(D) 1/6

31. For a silicon diode with long P and N regions, the accepter and donor impurity concentrations

are

holes in N region are both 100s . The electron and hole diffusion coefficients are

, respectively. The lifetimes of electrons in P region and

1

10

17

cm

3

and 1

15

10 cm

3

49cm / s and 36cm

1

2

2

10

/ s, respectively. Assume kT / q 26mV , the intrinsic carrier

C . When a forward voltage of 208 mV is

injected from P region to N

concentration is

applied across the diode, the hole current density  

regions is

10

cm

3

and q

1.6

10

19

in nA / cm

2

28.59

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Exp:

32.

Hole current density

P

n

n

2

i

0 N

d

p

n

L p

q.D .P

0

 

Given

N

  

 

1

5

10 cm

100

p

d

n

3

sec

V

a

208mV,D 36, D

p

n

49

e

qV

a

kT

  

1

qn
2 
D
qV
J
p
a
1
p N
i  
e
kT
 
d
p
 19
20
208
1.6
10
10
36
e
26
1
15
1
 10
100
 
6
10
2 
1.6
10
3
2.979
10
15
10
2
 28.59 nA / cm
V , where V
th
th
For the NMOSFET in the circuit shown, the threshold voltage is
 0 . The
I
V ss
V DD
source voltage
is varied from 0 to
. Neglecting the channel length modulation, the
D
V ss
drain current
as a function
is represented by.
V
DD

A

ID
VDD  Vth
V SS

VSS

B

ID
Vth

VSS

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C
ID
VDD  Vth
(A)
Exp:
V GS = V DS

VSS

Hence MOS Transistor is in saturation.

In saturation,

I

D

k

V

GS

V

r

2

k

V

DD

V

SS

V

T

2

As VSS ID Not linearly because square factor

Hence option (A) correct

D

ID
VDD  Vth

VSS

33.

In the system shown in figure (a), m(t) is a low-pass signal with bandwidth W Hz. The frequency response of the band-pass filter H(f) is shown in figure (b). If it is desired that the output signal z(t) = 10x(t), the maximum value of W (in Hz) should be strictly less than


zt
Amplifier
y
t
10x t  x
 
2
t
Hf 
Band
pass
filter

xtmtcos2400t

a

Hf 
1
1700
700
0
700
1700
f Hz
350

Exp:

x(t) m(t).cos2400t

Spectrum of x(t)

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X(f)
1200  w 1200 1200  w
1200  w
1200 1200  w
f

y(t) =10x(t)+x 2 (t) Let us draw the spectrum of positive frequencies of y(t).

y(t)

10m(t)cos 2400 t m (t)cos (2400 t)

2

2

10m(t)cos 2400 t

2

m (t)

1

 

cos4800 t

2



 

m (t)
2
m (t)
2
y(t)
10m(t)cos 2400 t
 
cos 4800 t
2
2
m (t)
2
2w
2w
y(t)Y(f)
2w
2w
1200 w
1200
1200 w 24002w 1200 2400 2w
2w
700
2400
2w
1700
 
w
350

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34. In the circuit shown,

that

V

12

the

thermal

V V

1

2

I

1

80mA and I Vs

2

4mA . Transistors

are identical. Assume

C , the value of the voltage

T and T

1

2

voltage

V

T

o

is 26mV at 27 C. At 50

o

(in mV) is

I2 V2
V1 I1
V12
T2
T1
83.88
V BE1
I
I e 
V
T
Exp:
We know that
1
s
V BE2
I 2
 I e 
V
T
s
I
V