Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No.

1, June 2015

MODELING OF MANUFACTURING OF A FIELDEFFECT TRANSISTOR TO DETERMINE CONDITIONS

TO DECREASE LENGTH OF CHANNEL
E.L. Pankratov1, E.A. Bulaeva2
1

Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,

Russia
2
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950, Russia

ABSTRACT
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.

KEYWORDS
Modelling of manufacture of a field-effect heterotransistor, Accounting mechanical stress; Optimization the
technological process, Decreasing length of channel

1. INTRODUCTION
One of intensively solved problems of the solid-state electronics is decreasing of elements of integrated circuits and their discrete analogs [1-7]. To solve this problem attracted an interest widely used laser and microwave types of annealing [8-14]. These types of annealing leads to generation of inhomogeneous distribution of temperature. In this situation one can obtain increasing of
sharpness of p-n-junctions with increasing of homogeneity of dopant distribution in enriched area
[8-14]. The first effects give us possibility to decrease switching time of p-n-junction and value of
local overheats during operating of the device or to manufacture more shallow p-n-junction with
fixed maximal value of local overheat. An alternative approach to laser and microwave types of
annealing one can use native inhomogeneity of heterostructure and optimization of annealing of
dopant and/or radiation defects to manufacture diffusive junction and implanted-junction rectifiers [12-18]. It is known, that radiation processing of materials is also leads to modification of distribution of dopant concentration [19]. The radiation processing could be also used to increase of
sharpness of p-n-junctions with increasing of homogeneity of dopant distribution in enriched area
[20, 21]. Distribution of dopant concentration is also depends on mechanical stress in heterostructure [15].
In this paper we consider a field-effect heterotransistor. Manufacturing of the transistor based on
combination of main ideas of Refs. [5] and [12-18]. Framework the combination we consider a
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

heterostructure with a substrate and an epitaxial layer with several sections. Some dopants have
been infused or implanted into the section to produce required types of conductivity. Farther we
consider optimal annealing of dopant and/or radiation defects. Manufacturing of the transistor has
been considered in details in Ref. [17]. Main aim of the present paper is analysis of influence of
mechanical stress on length of channel of the field-effect transistor.

Fig. 1. Heterostructure with substrate and epitaxial layer with two or three sections

c2
c1

oxide
source

drain
c1
a1 a2-a1

c3
gate

Lx-a2-a1
Fig. 2. Heterostructure with substrate and epitaxial layer with two or three sections. Sectional view

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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

2. METHOD OF SOLUTION
To solve our aim we determine spatio-temporal distribution of concentration of dopant in the considered heterostructure and make the analysis. We determine spatio-temporal distribution of concentration of dopant with account mechanical stress by solving the second Ficks law [1-4,22,23]
C ( x, y , z , t ) C ( x, y , z , t ) C ( x, y , z , t ) C ( x , y , z , t )
=
D
+
D
+
D
+ (1)
t
x
x
y
z

y
z
Lz
Lz

S
S
+
S ( x , y , z , t ) C ( x, y , W , t ) d W +
S ( x, y , z , t ) C ( x, y , W , t ) d W

x k T
y k T
0
0

with boundary and initial conditions

C ( x, y , z , t )
C ( x, y , z , t )
C ( x, y , z , t )
C ( x, y , z , t )
=0,
=0,
=0,
= 0,
y
x

y
x=Ly
x =0
x= L
y =0
x

C ( x, y , z , t )
C ( x, y , z , t )
=0,
= 0 , C (x,y,z,0)=fC(x,y,z).
z
z
z =0
x = Lz

Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant; is the atomic voLz

lume; S is the operators of surficial gradient; C ( x, y, z , t ) d z is the surficial concentration of

0

dopant on interface between layers of heterostructure; (x,y,z,t) is the chemical potential; D and
DS are coefficients of volumetric and surficial (due to mechanical stress) of diffusion. Values of
the diffusion coefficients depend on properties of materials of heterostructure, speed of heating
and cooling of heterostructure, spatio-temporal distribution of concentration of dopant. Concentraional dependence of dopant diffusion coefficients have been approximated by the following
relations [24]

C ( x, y , z , t )
C ( x, y , z , t )
,
.
(
)
D = DL (x, y , z , T ) 1 +
D
=
D
x
,
y
,
z
,
T
1
+

S
SL
S

P ( x, y, z , T )
P (x, y , z , T )

(2)

Here DL (x,y,z,T) and DLS (x,y,z,T) are spatial (due to inhomogeneity of heterostructure) and temperature (due to Arrhenius law) dependences of dopant diffusion coefficients; T is the temperature
of annealing; P (x,y,z,T) is the limit of solubility of dopant; parameter could be integer in the
following interval [1,3] [24]; V (x,y,z,t) is the spatio-temporal distribution of concentration of
radiation of vacancies; V* is the equilibrium distribution of vacancies. Concentrational dependence of dopant diffusion coefficients has been discussed in details in [24]. Chemical potential
could be determine by the following relation [22]

=E(z)ij[uij(x,y,z,t)+uji(x,y,z,t)]/2,

(3)

u j
1 u
is the deformation
where E is the Young modulus; ij is the stress tensor; uij = i +
2 x j xi
tensor; ui, uj are the components ux(x,y,z,t), uy(x,y,z,t) and uz(x,y,z,t) of the displacement vector
r
u ( x, y, z , t ) ; xi, xj are the coordinates x, y, z. Relation (3) could be transform to the following form

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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

u i ( x, y , z , t )

( x, y , z , t ) =

E (z )

xj

u j (x, y , z, t ) 1 u i ( x, y, z , t ) u j (x, y , z , t )
+

xi
xj
xi
2

(z ) ij u k ( x, y, z , t )

0 ij +
3 0 K (z ) ( z )[T ( x, y, z , t ) T0 ] ij ,

2
1 2 ( z )
xk

where is the Poisson coefficient; 0=(as-aEL)/aEL is the mismatch strain; as, aEL are the lattice
spacings for substrate and epitaxial layer, respectively; K is the modulus of uniform compression;
is the coefficient of thermal expansion; Tr is the equilibrium temperature, which coincide (for
our case) with room temperature. Components of displacement vector could be obtained by solving of the following equations [23]

2 u x ( x, y, z , t ) xx ( x, y , z , t ) xy ( x, y , z, t ) xz ( x, y, z , t )

(
z
)
=
+
+

t2
x
y
z

u y ( x, y, z , t ) yx (x, y , z , t ) yy ( x, y, z , t ) yz ( x, y , z, t )
=
+
+
(z )
t2
x
y
z

u z (x, y , z, t ) zx (x, y , z, t ) zy ( x, y, z , t ) zz ( x, y, z , t )
(z )
=
+
+
t2
x
y
z

where ij =

u k ( x, y , z , t )
E (z ) u i ( x, y, z, t ) u j (x, y , z , t ) ij u k ( x, y, z, t )
+

+ ij
2 [1 + ( z )]
xj
xi
3
xk
xk

K ( z ) ( z ) K (z ) [T ( x, y, z , t ) Tr ] , (z) is the density of materials, ij is the Kronecker symbol. With account of the relation the last system of equation takes the form
2
2 u x (x, y, z, t )
E ( z ) u y ( x, y, z, t )
5E ( z ) 2 u x (x, y, z, t )
= K ( z ) +
+ K ( z )
+
(z )

t2
x2
x y
6 [1 + ( z )]
3 [1 + ( z )]

2
E ( z ) u y ( x, y , z , t ) 2 u z ( x, y , z , t )
E ( z ) 2 u z ( x, y , z , t )
(
)
+
+
K
z
+
K (z )

2 [1 + ( z )]
y2
z2
3[1 + ( z )]
x z

(z )

(z )

2 u y ( x, y , z , t )
t2

T ( x, y , z , t )
x

2
E ( z ) u y ( x, y , z , t ) 2 u x ( x, y , z , t )
T ( x, y , z , t )
=
+
+

(z ) K (z )
2
x
x y
y
2[1 + ( z )]

2
u y (x, y , z , t )
E (z ) u y (x, y, z , t ) u z ( x, y, z , t ) 5 E ( z )
+
+
+ K ( z )
+

+
z 2[1 + (z )]
z
y
y2

12[1 + ( z )]
2
2 u y (x, y , z , t )

E (z ) u y (x, y , z , t )
(
)
+ K (z )
+
K
z

6 [1 + ( z )]
y z
x y

(z )

(4)

2
2 u z ( x, y , z , t ) 2 u z ( x , y , z , t ) 2 u z ( x, y , z , t ) 2 u x ( x, y , z , t ) u y ( x, y , z , t )
=
+
+
+

t2
x2
y2
x z
y z

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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

u x ( x, y, z , t ) u y (x, y , z , t ) u x ( x, y , z, t ) T ( x, y, z, t )
E (z )

+
+
+

K (z )

2 [1 + (z )] z
x
y
z
z

1 E ( z ) u z ( x, y, z, t ) u x ( x, y, z, t ) u y ( x, y, z, t ) u z (x, y, z, t )
K (z ) (z ) +

6
.
6 z 1 + (z )
z
x
y
z

Conditions for the displacement vector could be written as
r
r
r
r
u (x, L y , z , t )
u (L x , y , z , t )
u (0, y, z , t )
u (x,0, z , t )
= 0;
=0;
=0;
=0;
x
x
y
y
r
r
u (x, y , Lz , t )
r
r r
r
u (x, y ,0, t )
=0;
= 0 ; u (x, y, z ,0 ) = u 0 ; u ( x, y, z , ) = u 0 .
z
z

Farther let us analyze spatio-temporal distribution of temperature during annealing of dopant. We

determine spatio-temporal distribution of temperature as solution of the second law of Fourier
[25]
c (T )

T ( x, y , z , t ) T ( x, y , z , t ) T ( x, y , z , t ) T ( x, y , z , t )
=

+
t
x
x
y
z
y
z

(5)
+ p (x, y, z , t )

with boundary and initial conditions

T ( x, y , z , t )
T ( x, y , z , t )
T ( x, y , z , t )
T ( x, y , z , t )
= 0,
=0,
=0,
=0,
x
y
x
y
y =0
x =0
x = Lx
x = Ly
T ( x, y , z , t )
T ( x, y , z , t )
= 0,
= 0 , T (x,y,z,0)=fT (x,y,z).
z
z
z =0
x = Lz
Here is the heat conduction coefficient. Value of the coefficient depends on materials of heterostructure and temperature. Temperature dependence of heat conduction coefficient in most interest area could be approximated by the following function: (x,y,z,T)=ass(x,y,z)[1+ Td/
T(x,y,z,t)] (see, for example, [25]). c(T)=cass[1- exp(-T(x,y,z,t)/Td)] is the heat capacitance; Td is
the Debye temperature [25]. The temperature T(x,y,z,t) is approximately equal or larger, than
Debye temperature Td for most interesting for us temperature interval. In this situation one can
write the following approximate relation: c(T)cass. p(x,y,z,t) is the volumetric density of heat,
which escapes in the heterostructure. Framework the paper it is attracted an interest microwave
annealing of dopant. This approach leads to generation inhomogenous distribution of temperature
[12-14,26]. Such distribution of temperature gives us possibility to increase sharpness of p-njunctions with increasing of homogeneity of dopant distribution in enriched area. In this situation
it is practicably to choose frequency of electro-magnetic field. After this choosing thickness of
scin-layer should be approximately equal to thickness of epitaxial layer.
First of all we calculate spatio-temporal distribution of temperature. We calculate spatio-temporal
distribution of temperature by using recently introduce approach [15, 17,18]. Framework the approach we transform approximation of thermal diffusivity ass(x,y,z) =ass(x,y,z)/cass =0ass[1+T
gT(x,y,z)]. Farther we determine solution of Eqs. (5) as the following power series

i =0

j =0

T ( x, y, z , t ) = Ti j Tij (x, y , z, t ) .

(6)
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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

Substitution of the series into Eq.(6) gives us possibility to obtain system of equations for the initial-order approximation of temperature T00(x,y,z,t) and corrections for them Tij(x,y,z,t) (i1, j1).
The equations are presented in the Appendix. Substitution of the series (6) in boundary and initial
conditions for spatio-temporal distribution of temperature gives us possibility to obtain boundary
and initial conditions for the functions Tij(x,y,z,t) (i0, j0). The conditions are presented in the
Appendix. Solutions of the equations for the functions Tij(x,y,z,t) (i0, j0) have been obtain as
the second-order approximation on the parameters and by standard approaches [28,29] and
presented in the Appendix. Recently we obtain, that the second-order approximation is enough
good approximation to make qualitative analysis and to obtain some quantitative results (see, for
example, [15,17,18]). Analytical results have allowed to identify and to illustrate the main dependence. To check our results obtained we used numerical approaches.
Farther let us estimate components of the displacement vector. The components could be obtained
by using the same approach as for calculation distribution of temperature. However, relations for
components could by calculated in shorter form by using method of averaging of function corrections [12-14,16,27]. It is practicably to transform differential equations of system (4) to integrodifferential form. The integral equations are presented in the Appendix. We determine the firstorder approximations of components of the displacement vector by replacement the required
functions u(x,y,z,t) on their average values u1. The average values u1 have been calculated by
the following relations

us1=Ms1/4L,

(7)

Lx L y Lz

where M s i = u s i (x, y, z , t ) d z d y d x d t . The replacement leads to the following results

0 Lx L y 0

t
z
z
T (x, y, w, )
T ( x, y, w, )
u x1 (x, y, z, t ) = t K (w) (w)
d w d (t ) K (w) (w)
d wd
x
x
0
0
00
ux1 x 0 (x, y, w, t ) + ux1 ,

t
z
z
T (x, y, w, )
T (x, y, w, )
u y1 (x, y, z, t ) = t K (w) (w)
d w d (t ) K (w) (w)
d wd

y
y
0
0
0
0

uy1 y 0 ( x, y, w, t ) + uy1 ,

t
z
z
T (x, y, w, )
T ( x, y, w, )
u z 1 (x, y, z , t ) = t K (w) (w)
d w d (t ) K (w) (w)
d wd
w
w
0
0
00
uz1 z 0 (x, y, w, t ) + z 1 .

Substitution of the above relations into relations (7) gives us possibility to obtain values of the
parameters u1. Appropriate relations could be written as

ux1 =

],

Lz x 0 ( ) x 2 ( )
Lz

8 L3 (Lz z ) (z ) d z
0

uy1

],

Lz y 0 ( ) y 2 ( )
Lz

8 L3 (Lz z ) ( z ) d z
0

uz1

],

Lz z 0 ( ) z 2 ( )
Lz

8 L3 (Lz z ) ( z ) d z
0

t
T ( x, y , z, )

where s i ( ) = 1 + (Lz z ) K ( z ) ( z )
d z d y d x d .
Lx L y 0
s
0

Lx L y Lz

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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

The second-order approximations of components of the displacement vector by replacement of

the required functions u(x,y,z,t) on the following sums us2+us1(x,y,z,t), where us2=(Mus2-Mus1)/
4L3. Results of calculations of the second-order approximations us2(x,y,z,t) and their average
values us2 are presented in the Appendix, because the relations are bulky.
Spatio-temporal distribution of concentration of dopant we obtain by solving the Eq.(1). To solve
the equations we used recently introduce approach [15,17,18] and transform approximations of
dopant diffusion coefficients DL (x,y,z,T) and DSL (x,y,z, T) to the following form:
DL(x,y,z,T)=D0L[1+ L gL(x,y,z,T)] and DSL(x,y,z,T)=D0SL[1+ SLgSL(x,y,z,T)]. We also introduce the
following dimensionless parameter: = D0SL/ D0L. In this situation the Eq.(1) takes the form

C ( x, y , z , t )

C ( x, y , z , t ) C ( x, y , z , t ) C ( x, y , z , t )
= D0 L

[1 + L g L (z , T )]1 +
+

t
x
P ( z, T )
x
y

C ( x, y , z , t )

C ( x, y , z , t )
(
)
[1 + L g L ( z , T )]1 +
D
+
D
[
1
+

g
x
,
y
,
z
,
T
]
1
+

0
L
0
L
L
L

P (x, y , z , T )
z
P ( x, y , z , T )

C (x, y , z , t ) Lz
C ( x, y , z , t )

C (x, y ,W , t ) d W (8)
+ D0 L
1 + S L g S L ( z, T ) 1 + S
z
x
P ( z , T ) 0

(x, y, z, t )
C (x, y, z, t ) S (x, y, z, t ) Lz

S
C ( x, y , W , t ) d W .
D0 L + D0 L
1 + S

y
kT
kT
0
P ( z, T )

We determine solution of Eq.(1) as the following power series

i =0

j =0

k =0

C ( x, y, z , t ) = Li j k Cijk ( x, y, z , t ) .

(9)

Substitution of the series into Eq.(8) gives us possibility to obtain systems of equations for initialorder approximation of concentration of dopant C000(x,y,z,t) and corrections for them Cijk(x, y,z,t)
(i 1, j 1, k 1).The equations are presented in the Appendix. Substitution of the series into appropriate boundary and initial conditions gives us possibility to obtain boundary and initial conditions for all functions Cijk(x,y,z,t) (i 0, j 0, k 0). Solutions of equations for the functions
Cijk(x,y,z,t) (i 0, j 0, k 0) have been calculated by standard approaches [28,29] and presented in
the Appendix.
Analysis of spatio-temporal distributions of concentrations of dopant and radiation defects has
been done analytically by using the second-order approximations framework recently introduced
power series. The approximation is enough good approximation to make qualitative analysis and
to obtain some quantitative results. All obtained analytical results have been checked by comparison with results, calculated by numerical simulation.

3. DISCUSSION
In this section we analyzed redistribution of dopant under influence of mechanical stress based on
relations calculated in previous section. Fig. 3 show spatio-temporal distribution of concentration
of dopant in a homogenous sample (curve 1) and in heterostructure with negative and positive
value of the mismatch strain 0 (curve 2 and 3, respectively). The figure shows, that manufacturing field-effect heterotransistors gives us possibility to make more compact field-effect transistors
in direction, which is parallel to interface between layers of heterostructure. As a consequence of
37

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

the increasing of compactness one can obtain decreasing of length of channel of field- effect transistor and increasing of density of the transistors in integrated circuits. It should be noted, that
presents of interface between layers of heterostructure give us possibility to manufacture more
thin transistors [17].

C(x,), C(y,)

2
1

x, y
Fig. 3. Distributions of concentration of dopant in directions, which is perpendicular to interface between
layers of heterostructure. Curve 1 is a dopant distribution in a homogenous sample. Curve 2 corresponds to
negative value of the mismatch strain. Curve 3 corresponds to positive value of the mismatch strain

4. CONCLUSION
In this paper we consider possibility to decrease length of channel of field-effect transistor by using mechanical stress in heterostructure. At the same time with decreasing of the length it could
be increased density of transistors in integrated circuits.

ACKNOWLEDGEMENTS
This work is supported by the contract 11.G34.31.0066 of the Russian Federation Government,
Scientific School of Russia SSR-339.2014.2 and educational fellowship for scientific research.

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[21] E.L. Pankratov, E.A. Bulaeva. "Increasing of sharpness of diffusion-junction heterorectifier by using
radiation processing" Int. J. Nanoscience. Vol. 11 (5). P. 1250028-1--1250028-8 (2012).
[22] Y.W. Zhang, A.F. Bower. "Numerical simulations of islands formation in a coherent strained epitaxial
thin film system" Journal of the Mechanics and Physics of Solids. Vol. 47 (11). P. 2273-2297 (1999).
[23] L.D. Landau, E.M. Lefshits. Theoretical physics. 7 (Theory of elasticity) (Physmatlit, Moscow, 2001,
in Russian).
[24] Z.Yu. Gotra. Technology of microelectronic devices (Radio and communication, Moscow, 1991).
[25] K.V. Shalimova. Physics of semiconductors (Moscow: Energoatomizdat, 1985, in Rus-sian).
[26] V.E. Kuzmichev. Laws and formulas of physics. Kiev: Naukova Dumka, 1989 (in Russian).
[27] Yu.D. Sokolov. About the definition of dynamic forces in the mine lifting Applied Mechanics. Vol.1
(1). P. 23-35 (1955).
[28] A.N. Tikhonov, A.A. Samarskii. The mathematical physics equations (Moscow, Nauka 1972) (in
Russian).
[29] H.S. Carslaw, J.C. Jaeger. Conduction of heat in solids (Oxford University Press, 1964).

APPENDIX
Equations for functions Tij(x,y,z,t) (i0, j0)
2T (x, y , z , t ) 2T00 ( x, y , z, t ) 2T00 (x, y , z , t ) p ( x, y, z , t )
T00 (x, y , z, t )
= 0 ass 00 2
+
+
+
t
x
y2
z2
ass

2T ( x, y , z, t ) 2Ti 0 (x, y , z , t ) 2Ti 0 ( x, y, z , t )

Ti 0 ( x, y , z, t )
= 0 ass i 0 2
+
+
+
t
x
y2
z2

2T (x, y, z, t )
2 Ti 10 (x, y, z , t )
Ti 10 (x, y, z , t )
+ 0 ass g T (z ) i 10 2
+ gT (x )
+
gT (z )
, i 1
2
x
y
z
z

39

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

2T01 ( x, y , z, t ) 2T01 ( x, y, z, t ) 2T01 ( x, y, z , t )

T01 ( x, y, z , t )
0 ass Td
= 0 ass
+
+

+
2
2
2
t
x
y
z

T00 (x, y , z , t )
2
2 T00 ( x, y, z, t ) 2 T00 ( x, y, z, t ) 2T00 ( x, y , z, t )
0 ass Td T00 ( x, y, z , t )

+
+

x2
y2
z2
x

T00 ( x, y , z, t )

T (x, y , z , t ) T00 (x, y , z, t )

+ 00
+

y
z

2T (x, y, z, t ) 2T02 (x, y, z, t ) 2T02 (x, y, z, t )

T02 (x, y, z, t )
0 assTd
= 0ass 02 2
+
+
+

t
x
y2
z2

T00 (x, y, z, t )
2T ( x, y, z, t ) 2T01 ( x, y , z, t ) 2T01 (x, y , z, t )
0 assTd T00 ( x, y, z, t )
01 2
+
+

+1
x
y2
z2
x

T00 (x, y , z, t )
T ( x, y, z, t ) T00 ( x, y , z, t ) T01 ( x, y, z , t ) T00 ( x, y, z, t ) T01 ( x, y, z , t )
01
+
+

x
y
y
z
z

2 T00 (x, y, z, t )
T11 (x, y, z, t )
2T11 (x, y, z, t ) T01 (x, y, z, t )
= 0 ass
+
g
(
x
,
y
,
z
,
T
)
+ g T (x, y, z, T )

T
t
x2
T00 (x, y, z, t )
x2

2 T00 (x, y, z , t )
T00 (x, y, z , t )
T01 (x, y, z, t )
+
g T ( x, y , z , T )
0 ass + g T (x, y, z , T )
+
2
y
z
z
x
x

2 T01 (x, y, z , t )
2 T01 (x, y, z , t )
2 T01 (x, y, z , t )
[
(
)
]
[
(
)
]
1
g
x
,
y
,
z
,
T
1
g
x
,
y
,
z
,
T
+
+
+
+
0 ass +
T
T
x2
y2
z2

T ( x, y, z, t ) 2T00 ( x, y, z, t ) T10 ( x, y, z , t ) 2T00 ( x, y, z , t ) T10 (x, y , z , t ) 2T00 (x, y , z, t )

+ 10+1
+ +1
+ +1

T00 (x, y , z, t )
T00 ( x, y, z, t )
x2
y2
z2
T00 (x, y , z , t )

2
2
2

(
)
(
)
(
)

T
x
,
y
,
z
,
t

T
x
,
y
,
z
,
t

T
x
,
y
,
z
,
t

T
10
10
0 ass d
0 assTd + 0 ass d 10 2
+
+

+
(
T00 ( x, y , z, t )
x
y2
z2
T
x
, y, z, t )

00

2T ( x , y , z , t )
2T (x, y , z , t )
T00 ( x, y, z , t )
g T ( x, y, z, T ) 10 2
+ g T ( x, y, z , T ) 10 2
+
g T ( x, y , z , T )

x
y
z
z

T ( x, y , z, t ) T00 ( x, y , z, t ) T10 (x, y , z , t ) T00 (x, y , z , t ) T10 ( x, y, z, t ) T00 ( x, y, z, t )
10
+
+

x
x
y
y
z
z

2
2
2
g T ( x, y, z , T ) T00 ( x, y, z , t ) T00 (x, y, z , t ) T00 ( x, y, z , t )
+1

+
+

x
y
z
T00 (x, y, z , t ) T00 +1 ( x, y, z , t )

0 ass Td

0 ass Td .
Conditions for the functions Tij(x,y,z,t) (i0, j0)
Tij (x, y, z , t )
Tij (x, y, z, t )
Tij ( x, y, z, t )
Tij (x, y , z , t )
= 0,
=0,
=0,
= 0,
x
x
y
y
x =0
x=L
y =0
x= L
x

Tij (x, y , z, t )
z

= 0,
z =0

Tij ( x, y, z , t )
z

= 0 , T00(x,y,z,0)=fT(x,y,z), Tij(x,y,z,0)=0, i 1, j 1.
x = Lz

Solutions of the equations for the functions Tij(x,y,z,t) (i0, j0) with account appropriate boundary and initial conditions could be written as
40

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

T00 (x, y , z, t ) =
Ly

Lz

Lx

1 Lx L y Lz
2
cn ( x )cn ( y )cn (z )enT (t ) cn (u )
f T (u , v, w) d w d v d u +
Lx L y Lz 0 0 0
Lx L y Lz n =1
0

c n (v ) c n (w) f T (u , v, w) d w d v d u +

t L x L y L z p (u , v , w, )
1
2

d wd vd u d +

ass
Lx L y Lz 0 0 0 0
Lx L y Lz

Lx

Ly

Lz

n =1

c n (x ) c n ( y ) c n (z ) enT (t ) enT ( ) c n (u ) c n (v ) c n (w)

p (u, v, w, )

ass

d wd v d u d ,

1
1
1
where cn() = cos ( n/L), enT (t ) = exp 2 n 2 0 ass t 2 + 2 + 2 ;

Lx L y Lz

Ti 0 ( x, y, z, t ) = 2

0 ass
2
x

L L y Lz

Lx

Ly

Lz

n c n ( x ) c n ( y ) c n (z ) e nT (t ) e nT ( ) s n (u ) c n (v ) c n (w) g T (u, v, w, T )

n =1

Ly
Lx
0 ass
Ti 10 (u , v, w, )
d wd vd u d + 2
n cn ( x )cn ( y ) cn (z )enT (t ) enT ( ) cn (u ) sn (v )
2
u
Lx L y Lz n =1
0
0
0
t

Lz

g T (u , v, w, T )cn (w )
0

Ti 10 (u , v, w, )
0 ass
d wd v d u d + 2
n cn (x )cn ( y )cn ( z ) enT (t )
v
Lx L y L2z n =1

Lx

Ly

Lz

e nT ( ) c n (u ) c n (v ) s n (w) g T (u , v, w, T )

Ti 10 (u , v, w, )
d w d v d u d , i 1,
w

where sn() = sin ( n /L);

Ly
Lx
L z 2 T (u , v, w, )
t
2 T
00
T01 ( x, y, z, t ) = 0 ass 2 d n c n ( x ) c n ( y ) c n ( z ) e nT (t ) e nT ( ) s n (u ) c n (v )

L x L y L z n =1
u2
0
0
0
0
cn (w)

Ly
Lx
Lz
t
2 Td
d wd vd u d
(
)
(
)
(
)
(
)
(
)
(
)
+

n
c
x
c
y
c
z
e
t
e

c
u

sn (v ) cn (w)
n
n
n
nT
nT
n
0 ass

2
T00 (u , v, w, )
Lx L y Lz n =1
0
0
0
0

Ly
Lx
t
2T00 (u , v, w, ) d w d v d u d
2 Td
(
)
(
)
(
)
(
)
(
)
(
)
+

n
c
x
c
y
c
z
e
t
e

c
u

cn (v )
0 ass
n
n
n
nT
nT
n
v2
T00 (u , v, w, )
Lx L y L2z n =1
0
0
0
Lz

sn (w)
0

Lx
t
0 ass
2T00 (u , v, w, ) d w d v d u d
2 Td
cn (x )cn ( y )cn ( z )enT (t ) enT ( ) cn (u )

2
u
T00 (u , v, w, )
Lx L y Lz n =1
0
0

t
T (u , v, w, ) d w d v d u d
T
cn (v ) cn (w) 00
2 0 ass d cn (x ) cn ( y )cn ( z )enT (t ) enT ( )
+1
u
Lx L y Lz n =1
0
0
0

T00 (u , v, w, )
Ly

Lz

Ly
Lx
Lz
T (u , v, w, ) d w d v d u d
0 ass
cn (u ) cn (v ) cn (w) 00
2 Td
cn ( x )cn ( y )cn (z )enT (t )
+1
v
Lx L y Lz n =1
0
0
0

T00 (u , v, w, )
2

Ly
Lx
Lz
t
T (u , v, w, ) d w d v d u d
e nT ( ) c n (u ) c n (v ) c n (w) 00
;
+1
w
0
0
0
0

T00 (u , v, w, )
Ly
Lx
L z 2 T (u , v, w, )
t
2 T
01
T02 (x, y , z, t ) = 0 ass 2 d n c n ( x ) c n ( y ) c n ( z ) e nT (t ) e nT ( ) s n (u ) c n (v )

u2
L x L y L z n =1
0
0
0
0

cn (w)

Ly
Lx
Lz
t
2 Td
d wd v d u d
(
)
(
)
(
)
(
)
(
)
(
)
+

n
c
x
c
y
c
z
e
t
e

c
u

nT
n sn (v ) cn (w)
0 ass
n
n
n
nT

2
T00 (u , v, w, )
Lx L y Lz n =1
0
0
0
0

Lx
t
2T01 (u , v, w, ) d w d v d u d
2 Td
+

n cn (x ) cn ( y )cn ( z ) enT (t ) enT ( ) cn (u )

0 ass

2
2
v
T00 (u , v, w, )
Lx L y Lz n =1
0
0

41

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
Ly

Lz

cn (v ) sn (w)

2T01 (u , v, w, ) d w d v d u d
2 2 0 ass cn ( x )cn ( y ) cn (z )enT (t ) enT ( )
2

w
T00 (u , v, w, )
Lx L y Lz n =1
0

Lx

Ly

Lz

Td cn (u ) cn (v ) cn (w )

T00 (u , v, w, ) T01 (u , v, w, ) d w d v d u d
0 ass
2Td
cn ( x )
+1
u
u
T00 (u , v, w, )
Lx L2y Lz n =1

Lx

Ly

Lz

cn ( y )cn ( z )enT (t ) enT ( ) cn (u ) cn (v ) cn (w)

2

T00 (u , v, w, ) T01 (u , v, w, ) d w d v d u d

v
v
T00 +1 (u , v, w, )

Ly
Lx
Lz
Td 0 ass t
T00 (u , v, w, ) T01 (u , v, w, ) d w d v d u d
(
)
(
)

c
u

cn (v ) cn (w)
nT
n
2
Lx L y Lz n =1 0
T00 +1 (u , v, w, )
w
w
0
0
0

c n ( x ) c n ( y ) c n (z ) e nT (t ) ;
T11 (x, y , z , t ) =

Ly
Lx
Lz
t
2 T00 (u , v, w, )
2 0 ass

c n (x ) c n ( y ) c n (z ) e nT (t ) e nT ( ) c n (u ) c n (v ) c n (w)
L x L y L z n =1
w2
0
0
0
0

g T (u , v, w, T ) + g T (u , v, w, T )

2 T00 (u , v, w, )
T00 (u , v, w, ) T01 (u , v, w, )
+
d wd vd u d +
g T (w)

2
v
w
w
T00 (u , v, w, )

2T01 (u, v, w, )
2T (u, v, w, )
T01 (u, v, w, )
+ [1 + gT (u, v, w, T )] 01 2
+
gT (u, v, w, T )
d w d v d u d +
2
u
v
w
w

Ly
Lx
Lz
t

T (u , v, w, ) 2 T00 (u , v, w, )
+
c n ( x ) c n ( y ) c n ( z ) e nT (t ) e nT ( ) c n (u ) c n (v ) 10+1
L x L y L z n =1
u2
0
0
0
0 T00 (u , v, w, )
T (u , v, w, ) 2T00 (u , v, w, ) T10 (u , v, w, ) 2 T00 (u , v, w, )
0 ass
10+1
+ +1

c n (w) d w d v d u d +
2
2
T00 (u , v, w, )
v
T00 (u , v, w, )
w
Lx L y

+2

0 ass Td

Ly
Lx
Lz
2 T10 (u, v, w, ) 2T10 (u , v, w, ) 2T10 (u , v, w, )
Td t
(
)
(
)
(
)
(
)
e
c
u
c
v
c
w
+
+

nT
n n n

L z n =1 0
u2
v2
w2
0
0
0

Ly
Lx
t
T
d wd v d u d
cn ( x )cn ( y )cn (z )enT (t ) + 2 0 ass d 2 cn ( x )cn ( y )cn (z )enT (t ) enT ( ) cn (u ) cn (v )

T00 (u, v, w, )
Lx L y Lz n =1
0
0
0

Lz

2 T00 (u , v, w, )
T00 (u , v, w, )

c n (w) g T (u , v, w, T )
+
g T (u , v, w, T )
+ g T (u , v, w, T )
2
u
w
w
0

Ly
Lx
t
T00 (u , v, w, ) d w d v d u d
T

2 0 ass d cn ( x )cn ( y )cn ( z ) enT (t ) enT ( ) cn (u ) cn (v )

2
v
Lx L y Lz n =1
0
0
0
T00 (u , v, w, )
Lz
T (u , v, w, ) 2 T (u , v, w, ) 2 T (u , v, w, ) 2 d w d v d u d
00
00
cn (w) 00
.
+
+
+1
u
v

w
0

T00 (u , v, w, )
Integro-differential form of equations of systems (4) could be written as
z 2 u ( x, y , w, )
t
2u y ( x, y, w, ) 2u z (x, y , w, )
x
u x (x, y , z, t ) = u x (x, y , z, t ) + (t ) 5

x2
x y
x w
0
0

2
E (w) d w d t z 2 u x (x, y , w, ) u y (x, y , w, ) 2 u z (x, y , w, ) E (w) d w
5

6 [1 + (w)] 6 0 0
x2
x y
xw
1 + (w)

z
2 u x ( x, y, w, ) 2 u y ( x, y, w, ) 2 u z ( x, y, w, )
1 t z 2 u x (x, y , w, )
t K (w)
+
+
+
d wd +
2
x
x y
xw
2 00
x y
00

42

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

z 2 u ( x , y , w, )
2 u y ( x, y, w, ) E (w) d w
2 u y ( x, y, w, )
1t
x
(
)
(
)
t

d
+
t

y2
x w
w2
20
0
1 + (w)

2
z 2 u ( x, y , w, )
E (w) d w
t z 2u x ( x, y, w, ) u y (x, y , w, ) E (w) d w
x

d
+
d

1 + (w)
2 0 0
x y
y2
x w
00
1 + (w)

z
z
2 u y (x, y , w, ) E (w) d w
T ( x, y , w, )
t t
+
d (t ) (w) K (w)
d w d + t K (w)

2
w
x
2 0
0
00
1 + (w)
2
t
z
u x ( x, y, w, )
T (x, y , w, )
(w)
d w d + (t ) (w )
d w d x 1 ( x, y , z , t )
x
2
0
0

t (w)
00

2 u x (x, y , w, )
d wd ,
2

2
1 t
z u ( x, y, w, )
2 u x (x, y, w, ) E (w) d w
t
y
u y (x, y, z, t ) = u y ( x, y, z, t ) + (t )
+
d

2
x y
2
x
0
2 0
1 + (w)

2
2
z u ( x , y , w, )
2 u x ( x, y , w, ) E (w) d w
1 t z u y (x, y , w, ) 2 u x (x, y , w, )
y

+
d + 5

2
x
x y
6 0 0
y2
x y
00
1 + (w )

2
z u ( x, y, w, )
2 u x (x, y, w, ) 2 u z (x, y, w, )
2 u z (x, y, w, ) E (w) d w
y
t
d
5

2
yw
x y
y w
00
y
1 + (w)

t
z

z
E (w) d w
t
T ( x, y, w, )
T (x, y, w, )

d (t ) K (w) (w)
d w d + t (w)K (w)
d wd +
1 + (w)
6 0
y
y
0
00
t

2 u y (x, y , w, )

+ (t ) K (w)

x y

2 u y ( x, y, w, )

y2

z
2 u y ( x, y, w, )
+
d w d t K (w)
y w
00

t
2 u y (x, y , w, ) 2u y (x, y , w, ) 2u y (x, y , w, )
u y (x, y , z, )

+
+
+
d w d + (t )
2
x y
y
yw
z
0

+
z

u z ( x , y , z , )
E (z )
t E (z ) u y ( x, y , z , ) u z (x, y , z , )

d
d +
y
2 [1 + ( z )] 2 [1 + (z )] 0
z
y

+ (w)
00

2 u y (x, y, w, )

d w d (t ) (w)
0

2 u y (x, y, w, )

d w d y 1 (x, y, z , t ) ,

z 2 u ( x, y, w, )
1 t
2 u x (x, y, w, ) E (w) d w
t
z
u z (x, y, z, t ) = u z (x, y, z, t ) + (t )
+
d

2
(
)
x
w
w
0

1
+
2

x
2 0

2
2
2
z u ( x, y , w, )
t z u ( x, y , w, )
2 u y (x, y , w, )
u x (x, y , w, ) E (w) d w
z
z

+
d
+
+

x2
x w
y2
y w
00
00

1 + (w)

2
t
z
E (w) d w (t )
t z 2 u z ( x, y , w, ) u y ( x, y , w, ) E (w) d w

d
+
d (t ) (w)

2
1 + (w) 2
2 0 0
y
yw
0
0
1 + (w)

K (w)

z
t
u ( x, y , z , )
T (x, y , w, )
T (x, y , w, )
d w d + t K (w) (w)
d w d + (t ) 5 z

w
w
z
00
0

u x (x, y , z, ) u y (x, y , z, )
E (z )
E ( z ) u z ( x, y, z, ) u x ( x, y, z , )

5
d
x
y
6 [1 + (z )] 1 + ( z ) 0
z
x

43

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

t
u y (x, y , z, )
u x ( x, y, z , ) u y ( x, y , z, ) u z ( x, y, z , )
t
+
+
d + K (z ) (t )
d
y
6
x
y
z
0

u ( x, y , z , )

u y ( x, y, z , ) u z ( x, y, z , )
t K ( z ) x
+
+
d z 1 ( x, y , z , t ) ,
x
y
z
0

where s i (x, y, z, t ) = (w) u s (x, y, w, t ) d w , s =x,y,z, =L/2E0, E0 is the average value of Young
i

modulus.
The second-order approximations of components of displacement vector could be written as
z 2 u ( x, y , w, )
1 t
2u y1 ( x, y, w, )
x1
u x 2 ( x, y, z, t ) = ux 2 + u x1 ( x, y , z , t ) + 1 (t ) 5

x2
x y
0
6 0

z 2 u ( x, y , w, )
2 u y1 (x, y , w, ) 2 u z1 ( x, y, w, )
2 u z1 ( x, y, w, ) E (w) d w
x1

x w
x2
x y
x w
00
1 + (w)

z
2u x1 (x, y , w, ) 2u y1 ( x, y, w, ) 2 u z1 (x, y , w, )
E (w) d w
t t
d + (t ) K (w)
+
+
d wd
1 + (w)
6 0
x2
x y
x w
0

z
t z 2 u ( x, y , w, )
2 u x1 ( x, y , w, ) 2 u y1 (x, y , w, ) 2 u z1 ( x, y, w, )
x1

t K (w)
+
+
d
w
d
+
+

x2
x y
x w
x y
00
00

2
2u y1 ( x, y, w, ) E (w) d w (t )
1 t z 2 u x1 ( x, y, w, ) u y1 ( x, y, w, ) E (w) d w
+
d +
+

y2
2 0 0
x y
y2
1 + (w) 2
1 + (w)

z 2 u ( x, y , w, )
2 u y1 ( x, y , w, ) E (w) d w
1t
t z E (w)
x1
(
)
t

+
d

2
20
xw
w
2 0 0 1 + (w)
0

1 + (w)

(t ) d +

2
2u x1 ( x, y, w, ) 2 u y1 ( x, y, w, )
t z 2u x1 (x, y , w, ) u y1 (x, y , w, )

d
w
d

2 0 0
x y
y2
x w
w2

z
t z
E (w) d w
T ( x, y , w, )
T (x, y , w, )

d + t (w) K (w)
d w d K (w) (w)
d w (t
1 + (w)
x
x
00
00
t

) d (t ) (w)

z
2 u x1 (x, y , w, )
2 u x1 ( x, y, w, )
(
)

d
w
d
+
t
w
d w d

2
2
00
ux 2 x 0 ( x, y , z , t ) x 1 (x, y , z , t )},

t t z 2 u y1 (x, y, w, ) 2 u x1 (x, y, w, ) E (w) d w

u y 2 ( x, y, z , t ) = uy 2 + u y1 ( x, y , z , t ) +
+
d

x2
x y
0 2 0
1 + (w)
2
2
t z u ( x, y , w, )
2u x1 (x, y , w, )
t z u y1 ( x, y , w, ) 2u x1 ( x, y, w, ) E (w) d w
y1

+
d
+
5

2
2
2 0 0
x
x y
y
x y
00
1 + (w)

2
z u ( x, y , w, )
2 u z1 (x, y , w, ) E (w ) d w t
2 u x1 ( x, y , w, ) 2 u z1 (x, y , w, )
y1
d

y w
y2
x y
yw
00
1 + (w) 6

z
z
E (w ) d w
t t
T (x, y, w, )
T (x, y, w, )

d (t ) (w) K (w)
d w d + t K (w ) (w )
d wd
1 + (w )
6 0
y
y
0
00

44

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
t
z
z
2 u y1 ( x, y , w, ) 2 u y1 ( x, y, w, ) 2 u y1 ( x, y, w, )
(t ) K (w)
+
+
d w d t K (w)
2
x y
y
yw
0
0
00

2 u y1 (x, y , w, ) 2 u y1 (x, y , w, ) 2 u y1 ( x, y , w, )
u y1 ( x , y , z , )
1t

+
+
+
d w d + (t )
2
x y
y
yw
20
z

u z1 ( x, y , z , )
E (z )
t E ( z ) u y1 ( x , y , z , ) u z 1 ( x , y , z , )
+

d uy 2
d
y
z
y
1 + ( z ) 2 [1 + ( z )] 0

y 0 (x, y , z , t ) y 1 ( x, y, z, t )} 1 ,
1 t z 2 u z1 ( x, y, w, ) 2 u x1 (x, y , w, ) E (w) d w
u z 2 ( x, y , z , t ) = z 2 + u z1 ( x, y , z , t ) + 1
+

x2
xw
2 0 0
1 + (w)
z 2 u ( x, y , w, )
1t
t z 2 u z1 ( x, y , w, ) 2 u x1 (x, y , w, ) E (w) d w
z1
(
)
(t ) d
+
d
+
t

2 00
20
x2
x w
y2
0
1 + (w)
+

t
z
z 2 u ( x, y , w, )
2 u y1 (x, y, w, ) E (w) d w
T ( x, y, w, )
z1

K
w
w
d
w
d

+
(
)
(
)
(
)

(
)

yw
1
+
w

w
y2
0
0
0
0

z
2 u y1 ( x, y , w, ) E (w) d w
T (x, y, w, )
E (z ) t
t
d + t K (w) (w)
d wd +

(t )
yw
2
w
6 [1 + (z )] 0
00
1 + (w)

u (x, y , z, ) u x1 (x, y , z , ) u y1 ( x, y, z, )
t u z1 ( x, y, z , ) u x1 ( x, y , z, )
5 z1

d 5
z
x
y
6 0
z
x

t
u y1 ( x, y, z , )
u ( x, y, z, ) u y1 ( x, y, z , ) u z1 ( x, y , z, )
t E (z )

+ (t ) x1
+
+
d
d
y
x
6 [1 + ( z )] 0
y
z

u ( x, y , z , )
u y 1 ( x , y , z , ) u z 1 ( x, y , z , )
K ( z ) t K ( z ) x1
+
+
d z 2 z 0 ( x, y , z , t )
x
y
z
0

z 1 (x, y , z, t )} .

Calculation of the average values u2 leads to the following results

2
Lx L y Lz
1
2 u x1 ( x , y , z , t ) u y1 ( x , y , z , t ) 2 u z 1 ( x , y , z , t ) E ( z ) d z
2
(L z
ux 2 = Lz ( t ) 5

x2
x y
x z
0 0 0
12 0
1 + (z )

2u x1 (x, y , z, t ) 2u y1 ( x, y, z , t ) 2u z1 ( x, y , z , t ) (Lz z )
2 Lx L y Lz
)
(
)
z d yd xd t

E z 5

12 0 0 0 0
x2
x y
x z

1 + ( z )

d z d y d x d t +

Lx L y Lz
2 u x1 ( x , y , z , t ) 2 u y 1 ( x , y , z , t ) 2 u z 1 ( x , y , z , t )
1
2
(
)
(
)

t
L

z
+
+

20
x2
x y
x z
0 0 0

K (z ) d z d y d x d t

2u x1 (x, y , z, t ) 2u y1 (x, y , z, t ) 2u z1 ( x, y, z , t )
2 Lx L y Lz
+
+
( Lz z )

2 000 0
x2
x y
x z

Lx L y Lz
2 u x1 (x, y , z , t ) 2 u y1 (x, y , z , t ) Lz z
1
2
K ( z ) d z d y d x d t + ( t ) E ( z )
+
d zd y

20
x y
y2
0 0 0

1 + (z )

45

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

d x d t +

Lx L y Lz
2 u x1 ( x , y , z , t ) 2 u y 1 ( x , y , z , t ) E ( z ) d z
2
1
2
+
d
y
d
x
d
t

( t ) (Lz z )

x z
z2
20
4
0 0 0

1 + (z )

(Lz z ) 2u x1 (x, y, z , t ) + 2u y1 (x, y, z , t ) d z d y d x d t + 1 ( t )2 L L L Lz z

1 + (z )
x y
y2
40
0 0 0 0
0 0 0 1 + (z )

L L L
2 u x1 ( x , y , z , t ) 2 u y1 ( x , y , z , t )
( z ) 2 u x1 ( x , y , z , t )
(
)
(
)

+
+

E
z
d
z
d
y
d
x
d
t
L
z

z
2
2

Lx L y Lz

x y

E (z )

x y

x z

Lx L y Lz

0 0 0

0 0 0 0

2 d z d y d x d t ( t ) (Lz z ) (z ) u x1 (x, y , z, t ) d z d y d x d t +

2 Lx L y Lz
( Lz z )
2 000 0

Lz

u x1 (x, y, z , t )
1
2
(
)
(
)
d
z
d
y
d
x
d
t
+

L
(L z z ) ( z ) d

x
0
x
2

2
2
t2
0

2

z ,

Lx L y Lz
1
(Lz z ) 2 u y1 (x, y, z, t ) 2 u x1 (x, y, z, t )
2
2
uy 2 = L z ( ) E (z )
+
d
z
d
y
d
x
d
t

1 + (z )
x y
2
x2
0 0 0
2 0

Lx L y Lz
(L z ) 2 u y1 (x, y, z, t ) 2 u x1 (x, y, z, t )
Lz z
1 Lx L y Lz
d
z
d
y
d
x
d
t
E (z ) z
+
+

E (z )
2
1 + (z )
12 0 0 0 0
1 + (z )
x
x y
0 0 0 0

2 u y1 (x, y, z , t ) 2 u x1 (x, y, z , t ) 2 u z1 (x, y, z , t )

2 Lx L y Lz
2
5

d
z
d
y
d
x
(

)
d
t

E (z )
y2
x y
y z
12 0 0 0 0

2
Lx L y Lz

L z u y1 ( x, y , z , t ) 2 u x1 ( x, y , z , t ) 2 u z 1 ( x, y , z , t )
K (z )
2
z
5

d z d y d x d t + ( t )
2
1 + (z )
y
x y
y z
2
0
0
0
0

Lx L y Lz
2 u y 1 ( x , y , z , t ) 2 u y1 ( x , y , z , t ) 2 u y 1 ( x , y , z , t )
( Lz z )
+
+
d
z
d
y
d
x
d
t

K ( z ) ( Lz z )

x y
y2
y z
0 0 0 0

2
2
2
2 u y1 ( x , y , z , t ) u y1 ( x , y , z , t ) u y1 ( x , y , z , t )
1 L x L y L z u y1 ( x , y , z , t )

+
+
d
z
d
y
d
x
d
t
+
+

2
x y
y2
y z
2 0 0 0 0
z

u ( x, y , z , t ) E ( z ) d z
2 L x L y L z u y1 ( x , y , z , t ) u z 1 ( x , y , z , t ) E ( z ) d z
2

d
y
d
x
d
t
+ z1
(

2 0 0 0 0
y
z
y
1 + (z )
1 + (z )
2
Lx L y Lz
2 u y1 ( x , y , z , t )
1
2 L x L y L z u y 1 ( x, y , z , t )
2
d
z
d
y
d
x
d
t
d y d x d t ( t ) ( z )
+

20
t2
2 0000
t2
0 0 0
Lx L y Lz

y 2 ( )

0 0 0 0

( z ) d z d y d x d t (L z z ) ( z ) u y 1 ( x, y , z , t ) d z d y d x d t

+ 2

y 0 ( )

Lz

4 L (L z z ) ( z ) d z ,
0

1
2 0

Lx L y Lz

z 2 = L z ( t )2 E (z )
0 0 0

z ) 2 u z1 ( x, y, z , t ) 2 u x1 (x, y, z , t )
2
+
d
z
d
y
d
x
d
t

1 + (z )
x2
x z
2

(L z

(Lz z ) 2u z1 (x, y, z , t ) + 2u x1 (x, y, z , t ) d z d y d x d t + 1 ( t )2 L L L E (z )

1 + (z )
x2
x z
20
0 0 0 0
0 0 0

L L L 2 u ( x, y , z , t )
2 u z1 ( x, y , z , t ) 2 u y 1 ( x, y , z , t )
2 u y1 ( x , y , z , t )
z1
Lx L y Lz

x y

E (z )

x y z

y z

d zd yd xdt
0 0 0 0

y2

y z

46

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

E ( z ) (L z z )
1 Lx L y Lz u (x, y, z, t ) u x1 (x, y, z, t ) u y1 (x, y, z, t )

d z d y d x d t + 5 z1

2 [1 + (z )]
12 0 0 0 0
z
x
y

E (z ) d z
2 L x L y L z u z 1 ( x , y , z , t ) u x1 ( x , y , z , t ) u y 1 ( x , y , z , t )
2

d y d x ( t ) d t
5

1 + (z )
12 0 0 0 0
z
x
y

Lx L y L z

E (z ) d z
K (z ) u x1 (x, y , z , t ) u y1 (x, y , z , t ) u z1 ( x, y, z, t )
2
d y d x d t + ( t )
+
+

1 + (z )
2
x
y
z
0
0 0 0

d zd yd xdt

z 2 ( )
2

u x1 ( x , y , z , t ) u y1 ( x , y , z , t ) u z 1 ( x , y , z , t )
2 Lx L y Lz
+
+
K (z )

x
y
z
2 0000

Lx L y Lz

d z d y d x d t ( Lz z ) u z 1 ( x , y , z , t ) ( z ) d z d y d x d t + 2
0 0 0 0

z 0 ( ) L z
4 ( L z z )
2 0

(z ) d z L} .
1

System of equations for the functions Cijk(x,y,z,t) (i 0, j 0, k 0) could be written as

2 C 000 (x, y , z , t ) 2 C 000 ( x, y, z , t ) 2 C000 (x, y, z , t )
C 000 (x, y , z , t )
= D0 L
+
+
;
t
x2
y2
z2

C i 00 ( x, y , z, t )
C i 100 ( x, y, z , t )
C i 100 ( x, y, z , t )
= D0 L
g L (z, T )
+
g L (z , T )
+

t
x
y
y

x
+

Ci 100 (x, y, z, t ) 2 Ci 00 (x, y, z, t ) 2 Ci 00 (x, y, z, t ) 2 Ci 00 (x, y, z, t )

(
)
g
z
,
T
+
+
, i 1;
L
+
z
z
x2
y2
z2

2 C 010 ( x, y , z, t ) 2 C 010 (x, y , z, t ) 2 C 010 (x, y , z , t )

C 010 ( x, y, z, t )
= D0 L
+
+
+
t
x2
y2
z2

C 000
(x, y, z , t ) C 000 (x, y, z, t ) C 000
(x, y, z, t ) C 000 (x, y, z , t )
+ D0 L
+

+
x
y
x P ( x, y, z , T )
y P ( x, y , z , T )

C 000 (x, y , z , t ) C000 ( x, y , z, t )

+

;
z P ( x, y , z , T )
z

2
2
C 020 ( x, y, z , t ) C 020 ( x, y , z , t ) 2 C 020 ( x, y , z , t )
C 020 ( x, y, z , t )
= D0 L
+
+
+ D0 L
t
x2
y2
z2

1

(x, y, z, t ) C 000 (x, y, z, t )
C 000
C 000 (x, y , z, t )

C 010 (x, y , z , t )
+
C 010 ( x, y , z, t )
P (x, y , z , T )
y
y
x
y

1
1

C 000
(x, y, z, t )
(x, y, z, t ) C000 (x, y, z, t )
( x, y, z , t )
C 000
C 000
(
)
+
C
x
,
y
,
z
,
t
+
D

010
0
L

z
P (x, y, z, T ) z
P ( x, y, z , T )

x P (x, y, z, T )

(x, y, z, t ) C 010 (x, y, z, t ) C 000

(x, y, z, t ) C 010 (x, y, z, t )
C 010 (x, y , z , t ) C 000

+

;
+
x
y
z
y P ( x, y , z , T )
z P ( x, y , z , T )

2
2
2
C 001 ( x, y, z , t ) C 001 (x, y , z , t ) C 001 ( x, y, z , t )
C 001 (x, y , z , t )
= D0 L
+
+
+
t
x2
y2
z2

47

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

+ D0 SL

C 000
( x, y , z , t ) L z
S (x, y, z , t )

1 + S L g S L (x, y, z , T ) 1 + S
+
C 000 (x, y, W , t ) d W
x
P (x, y, z , T ) 0
kT

+ D0 SL

1 + S L g S L ( x, y , z , T )
y

]1 +

C 000
( x, y , z , t ) L z
S (x, y, z , t )
;
C 000 ( x, y , W , t ) d W

P ( x, y , z , T ) 0
kT

2 C 002 ( x, y , z , t ) 2 C 002 (x, y , z , t ) 2 C 002 ( x, y, z , t )

C 002 ( x, y , z , t )
= D0 L
+
+
+
t
x2
y2
z2

+ D0 SL

C 000
( x, y , z , t ) L z
S (x, y , z , t )

1
+
g
(
x
,
y
,
z
,
T
)
1
+

C 001 (x, y, W , t ) d W
SL SL
S

x
P ( x, y, z , T ) 0
kT

+ D0 SL

( x, y , z , t ) L z
C 000
S (x, y, z , t )

1 + S L g S L (x, y, z , T ) 1 + S
+
C 001 ( x, y, W , t ) d W
y
P (x, y, z , T ) 0
kT

+ D0 SL

1 + S L g S L (x, y , z , T )
x

]1 +

( x, y , z , t )
C 001

1
( x, y , z , t ) L z
C 000
C 000 (x, y , W , t ) d W

P ( x, y , z , T ) 0

1
( x, y , z , t ) S ( x, y , z , t ) L z C ( x , y , W , t ) d W
S ( x, y , z , t )
C000

(
)

+
1
+
C
x
,
y
,
z
,
t
000

S 001

kT
P ( x, y , z , T )
kT
0
y

1 + S L g S L (x, y , z , T ) } D0 SL ;
2 C110 (x, y , z , t ) 2 C110 ( x, y , z , t ) 2 C110 ( x, y , z, t ) C010 ( x, y, z , t )
C110 ( x, y, z, t )
= D0 L
+
+

+
t
x2
y2
z2
x

C010 (x, y, z, t )
C010 (x, y, z, t )
g L (x, y, z, T ) +
g L (x, y, z, T )
+
g L (x, y, z, T )
D0 L +
y
z
y
z

C (x, y , z, t ) C100 (x, y , z , t ) C000

(x, y, z, t ) C100 (x, y, z, t ) + C000
( x, y , z , t )
+ 000
+

x
y
x P ( x, y , z , T )
y P ( x, y , z , T )
z P (x, y , z , T )
1
1

(x, y, z, t ) C000 (x, y, z, t ) + C000
( x, y , z , t )
C (x, y , z , t )
C 000
100
D0 L + C100 ( x, y , z , t )

P ( x, y , z , T )
z
x
x

y P ( x, y , z , T )
1
(x, y, z, t ) C 000 (x, y, z, t )
C 000 (x, y , z , t )
C 000
(
)
+
,
,
,
C
x
y
z
t
100
D0 L ;

y
z
P ( x, y , z , T )
z

2 C100 (x, y, z , t ) 2 C100 (x, y , z , t ) 2 C100 (x, y , z, t ) C000 (x, y , z, t )
C101 (x, y , z, t )
= D0 L
+
+

+
t
x2
y2
z2
y

x

C000 (x, y , z , t )
C000 ( x, y, z , t )
g L (x, y, z , T ) +
g L ( x, y , z , T )
+
g L ( x, y , z , T )
D0 L +
y
z
y
z

1

( x , y , z , t ) L z C ( x, y , W , t ) d W
C000

+ D0 SL
1 + S L g S L ( x, y, z , T ) 1 + S C100 (x, y , z , t )
100
x
P (z, T ) 0

( x, y , z , t )
( x, y , z , t )
C 000

S
+ D0 SL
1 + S L g S L ( x, y, z, T ) 1 + S C100 ( x, y , z, t )

kT
y
P (z , T )

Lz
Lz
( x, y , z , t )
C100 ( x, y , W , t ) d W S
+
1 + S L g S L ( x, y , z, T ) C100 ( x, y , W , t ) d W
kT
0
0
x

C100 (x, y , z , t )

48

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

S ( x, y , z , t ) L z
S ( x, y , z , t )

C100 (x, y ,W , t ) d W D0 SL +
1 + S L g S L ( x, y , z , T )
kT
y
kT
0

Lz
Lz

C100 ( x, y, W , t ) d W C100 ( x, y , W , t ) d W D0 SL ;
0
0

2 C011 (x, y, z , t ) 2C011 ( x, y , z , t ) 2 C011 (x, y, z , t ) C000

(x, y, z, t )
C011 (x, y, z , t )
= D0 L
+
+
+
2
2
2
(
t

x
P
x
, y, z , T )

(x, y, z, t ) C001 (x, y, z, t ) + C000

(x, y, z, t ) C001 (x, y, z, t ) D +
C001 (x, y, z , t ) C000
+

0L

x
y
z

y P ( x, y , z , T )
z P ( x, y , z , T )

C 1 ( x, y , z , t ) C 000 (x, y , z, t )
C000 ( x, y , z, t )
+ D0 L C001 ( x, y , z , t ) 000

+
C001 (x, y , z , t )

P ( x, y , z , T )
x
y
x
y
1
(x, y, z , t ) C 000 (x, y, z , t ) S (x, y, z, t )
C 1 (x, y , z , t )
C 000
(
)
000
+
C
x
,
y
,
z
,
t

001
+

P ( x, y , z , T ) z
P ( x, y , z , T )
z
kT
x

C (x, y , z , t ) Lz
S ( x, y, z, t )
1 + S L g S L (x, y , z, T ) 1 + S 000

C010 (x, y ,W , t ) d W D0 SL +

P ( x, y , z , T ) 0
x
kT

C 1 ( x, y, z , t ) Lz
1 + S L g S L (x, y , z , T ) 1 + S C010 ( x, y, z , t ) 000
C000 ( x, y ,W , t ) d W D0 SL + D0 SL

P ( x, y , z , T ) 0

1 + S L g S L (x, y, z, T )
y

] 1 + C (x, y, z, t ) CP (x(,x,yy, z, ,zT, t)) (kxT, y, z, t ) C (x, y,W , t ) d W .

1
000

010

Lz

000

Boundary and initial conditions for functions Cijk(x,t) (i 0, j 0, k 0) could be written as

Cijk ( x, y, z , t )
Cijk ( x, y, z , t )
Cijk ( x, y, z , t )
C ijk ( x, y, z, t )
=0;
=0;
= 0;
= 0;
x
x
y
y
x= L
y =0
y=L
x =0
x

Cijk ( x, y , z , t )
Cijk ( x, y , z, t )
=0;
= 0 ; C000(x,y,z,0)=fC (x,y,z); Cijk(x,y,z,0)=0.
z
z
z =0
z = Lz
Solutions of equations for functions Cijk(x,t) (i 0, j 0, k 0) could be written as
C 000 ( x, y, z , t ) =

F0 C
2
+
FnC cn (x ) cn ( y )cn (z )enC (t ) ,
Lx L y Lz Lx L y Lz n =1

Ly
Lx
Lz

1
1
1
where enC (t ) = exp 2 n 2 D0 L t 2 + 2 + 2 , FnC = c n (u ) cn (v ) c n (w) f C (u, v, w) d w d v d u ;
L L L
0
0
0

y
z
x
Ly
Lx
Lz
t
2 D
C i 00 (x, y , z , t ) = 2 0 L n FnC c n (x ) c n ( y ) c n (z ) e nC (t ) e nC ( ) s n (u ) c n (v ) g L (u , v, w, T )
L x L y L z n =1
0
0
0
0

cn (w)

Lx
t
Ci 100 (u , v, w, )
2 D0 L
d wd v d u d
n FnC cn (x )cn ( y )cn ( z )enC (t ) enC ( ) cn (u )
2
u
Lx L y Lz n =1
0
0

Ly

Lz

sn (v ) cn (w) g L (u , v, w, T )

Ci 100 (u , v, w, )
2 D0 L
d wd vd u d
cn ( x )cn ( y )cn (z )enC (t )
v
Lx L y L2z n =1

49

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015
t

Lx

Ly

Lz

n FnC e nC ( ) c n (u ) c n (v ) s n (w) g L (u , v, w, T )
C010 ( x, y , z , t ) =
cn (w)

C i 100 (u , v, w, )
d w d v d u d , i 1;
w

Ly
Lx
Lz
t
(u , v, w, )
2 D0 L
C000
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u
c
v

nC n
n
n
nC
nC
n
n
2

Lx L y Lz n =1
0
0
0
0 P (u , v, w, T )

Lx
t
C 000 (u , v, w, )
2 D0 L
(
)
(
)
(
)
(
)
(
)
d wd vd u d
n
F
c
x
c
y
c
z
e
t
e

cn (u )
nC
n
n
n
nC
nC
u
Lx L2y Lz n =1
0
0

Ly

Lz

Lz

sn (v ) cn (w) cn (w )

(u , v, w, ) C000 (u, v, w, ) d w d v d u d 2 D0 L n c (x )c ( y )
C000
n
n

P (u , v, w, T )
v
Lx Ly L2z n =1

Lx

Ly

Lz

FnC c n (z ) e nC (t ) e nC ( ) c n (u ) c n (v ) s n (w)
0

C020 ( x, y , z , t ) =
cn (w )

(u, v, w, ) C 000 (u, v, w, )

C 000
d wd vd u d ;

P (u , v, w, T )
w

Ly
Lx
Lz
t
2 D0 L
n FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) s n (u ) cn (v ) C 010 (u , v, w, )
2
Lx L y Lz n =1
0
0
0
0

1
(u, v, w, ) C000 (u, v, w, ) d w d v d u d 2 D0 L n F c (x )c ( y )c (z )e (t )
C 000
nC n
n
n
nC

P (u , v, w, T )
u
Lx L2y Lz n =1

Lx

Ly

Lz

enC ( ) sn (u ) cn (v ) cn (w) C 010 (u , v, w, )

0

1
(u, v, w, ) C000 (u, v, w, ) d w d v d u d
C 000
P (u , v, w, T )
v

Lx

Ly

n =1

Lz

n FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) sn (u ) cn (v ) cn (w)C010 (u , v, w, )

t
2 D0 L C 000 (u , v, w, )
2 D
d w d v d u d 2 0 L n FnC cn (x )cn ( y )cn ( z ) enC (t ) enC ( )
2
Lx L y Lz
w
Lx L y Lz n =1
0

Lx

Ly

Lz

s n (u ) cn (v ) cn (w)

(u, v, w, ) C010 (u, v, w, ) d w d v d u d 2 D0 L n F c (x )

C000

nC n

P (u , v, w, T )
u
Lx L2y Lz n =1
Ly

Lx

Lz

cn ( y )cn (z )enC (t ) enC ( ) cn (u ) s n (v ) cn (w )

0

1
(u, v, w, )
C000
P (u , v, w, T )

(u, v, w, ) C010 (u, v, w, ) d w d v d u d

C 000
P (u , v, w, T )
v

(u, v, w, ) C010 (u, v, w, ) d w d v d u d

C 000
2 D0 L
(
)
(
)
(
)
(
)
n
F
e

c
u
c
v
s
w

n n n
nC nC
Lx L y L2z n =1
P (u , v, w, T )
w
0
0
0
0

Ly

Lx

Lz

cn ( x )cn ( y )cn ( z )enC (t ) ;

C001 ( x, y, z , t ) =

L y Lz
Lx
t
2 D0 L
S (u , v, w, )
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u

nC n
n
n
nC
nC
n
2
Lx L y Lz n =1
kT
0
0
0 0

C (u , v, w, ) Lz
1 + S L g S L (u , v, w, T ) 1 + S 000
C000 (u , v,W , ) d W cn (w) d w cn (v ) d v d u d
P (u , v, w, T ) 0

Ly
Lx
Lz
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)

n
F
c
x
c
y
c
z
e
t
e

c
u

nC
n sn (v ) cn (w) C 000 (u , v,W , ) d W
nC n
n
n
nC
2
Lx L y Lz n =1
0
0
0
0
0

C (u , v, w, ) S (u , v, w, )
1 + S L g S L (u , v, w, T ) 1 + S 000
d wd vd u d ;

P (w, T )
kT

Ly
Lx
Lz
t
2 D
(u , v, w, )
C002 ( x, y , z , t ) = 2 0 L n FnC cn (x ) cn ( y )cn ( z )enC (t ) enC ( ) sn (u ) cn (v ) S

Lx L y Lz n =1
kT
0
0
0
0

C (u , v, w, ) Lz
D0 L
1 + S L g S L (u , v, w, T ) 1 + S 000

C001 (u , v,W , ) d W cn (w ) d w d v d u d

P (u , v, w, T ) 0
Lx L2y Lz

50

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

n =1

Lx

Ly

Lz

n FnC cn ( x )cn ( y )cn ( z ) enC (t ) enC ( ) cn (u ) sn (v ) cn (w)

S (u , v, w, ) Lz
C001 (u , v,W , ) d W
kT
0

C (u , v, w, )
2 D
2 1 + S L g S L (u , v, w, T ) 1 + S 000
d w d v d u d 2 0 L FnC cn ( x )cn ( y )cn ( z )

P (u , v, w, T )
Lx L y Lz n =1

1
Ly
Lx
Lz
t

Lz

(x, y, z , t ) C000 (u, v, w, ) C000 (u, v,W , )d W

n enC (t ) enC ( ) sn (u ) cn (v ) cn (w)1 + S C001
P (u , v, w, T ) 0
0
0
0
0

] (kuT, v, w, ) d w d v d u d 2L LD L F c (x )c ( y )c (z )e (t )

1 + S L g S L (u , v, w, T )

t Lx

Ly

Lz

0 0

n sn (u ) cn (v ) cn (w)

0L
2
y z

n =1

nC n

nC

1
(u, v, w, ) LzC (u, v,W , )d W
C000
S (u, v, w, )

1 + S C001 (x, y, z , t )
000
kT
P (w, T ) 0

1 + S L g S L (u , v, w, T ) d w d v d u e nC ( ) d ;
Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u
c
v

g L (u , v, w, T )
nC
n
n
n
nC
nC
n
n
L2x L y L z n =1
0
0
0
0

C110 (x, y , z , t ) =
cn (w)

Lx
t
C 010 (u , v, w, )
2 D0 L
d wd vd u d
n FnC cn ( x )cn ( y )cn (z )enC (t ) enC ( ) cn (u )
2
u
Lx L y Lz n =1
0
0

Ly

Lz

sn (v ) cn (w) g L (u , v, w, T )
0

C010 (u , v, w, )
2 D0 L
d wd v d u d
n FnC cn ( x )cn ( y )cn ( z )
v
Lx L y L2z n =1

Lx

Ly

Lz

enC (t ) enC ( ) cn (u ) cn (v ) s n (w) g L (u , v, w, T )

C010 (u , v, w, )
2 D
d w d v d u d 2 0L
w
Lx L y Lz

Lx

Ly

Lz

n FnC cn ( x )cn ( y )cn ( z ) enC (t ) enC ( ) sn (u ) cn (v ) cn (w) g L (u , v, w, T )C100 (u , v, w, )

n =1

C000 (u , v, w, ) C000 (u , v, w, )
2 D0 L
d wd v d u d
n FnC cn ( x )cn ( y )cn ( z ) enC (t )

P (u , v, w, T )
u
Lx L2y Lz n =1
1

Lx

Ly

Lz

enC ( ) cn (u ) s n (v ) g L (u , v, w, T )C100 (u , v, w, )

cn (w) d w d v d u d

Ly
Lx
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

c
u

nC
n cn (v )
nC n
n
n
nC
Lx L y L2z n =1
0
0
0

Lz

sn (w) g L (u , v, w, T ) C100 (u , v, w, )
0

1
(u, v, w, ) C000 (u, v, w, )
C000
P (u , v, w, T )
v

1
C000
(u, v, w, ) C000 (u, v, w, ) d w d v d u d
P (u , v, w, T )
w

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u

cn (v ) cn (w) g L (u , v, w, T )
nC n
n
n
nC
nC
n
2
Lx L y Lz n =1
0
0
0
0

(u, v, w, ) C100 (u, v, w, ) d w d v d u d 2 D0 L n c (x )c ( y )c (z )e (t )

C 000
n
n
n
nC

P (u , v, w, T )
u
Lx L2y Lz n =1
t

Lx L y

Lz

0 0

FnC enC ( ) s n (v ) cn (w) g L (u , v, w, T )

cn (u ) d u d

(u, v, w, ) C100 (u, v, w, ) d w d v

C000

P (u , v, w, T )
u

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

c
u
c
v

s n (w )
nC
n
n
n
nC
nC
n
n
Lx L y L2z n =1
0
0
0
0

g L (u , v, w, T )

(u , v, w, ) C100 (u, v, w, )
C 000
d wd vd u d ;
P (w, T )
u

51

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

C101 ( x, y , z , t ) =

cn (w )

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u

nC
n cn (v ) g L (u , v, w, T )
nC n
n
n
nC
2
Lx L y Lz n =1
0
0
0
0

Lx
t
C000 (u , v, w, )
2 D0 L
d wd v d u d
FnC cn (x ) cn ( y )cn ( z ) enC (t ) enC ( ) cn (u )
2
u
Lx L y Lz n =1
0
0

Ly

Lz

Lz

n s n (v ) cn (w ) cn (w)g L (u , v, w, T )

C000 (u , v, w, )
2 D0 L
d wd vd u d
n cn (x )cn ( y )
v
Lx L y L2z n =1

Lx

Ly

Lz

FnC cn ( z )enC (t ) enC ( ) cn (u ) cn (v ) s n (w ) g L (u , v, w, T )

C000 (u , v, w, )
d wd vd u d
w

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u
c
v

1 + S L g S L (u , v, w, T )
nC
n
n
n
nC
nC
n
n
L2x L y Lz n =1
0
0
0
0

S (u , v, w, )
C000
(u, v, w, ) LzC (u, v,W , ) d W S (u, v, w, ) d w d v d u d
+

1
S

100
kT
P (u , v, w, T ) 0
kT

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u
c
v

1 + S L g S L (u , v, w, T )
nC n
n
n
nC
nC
n
n
L2x L y Lz n =1
0
0
0
0

C 1 (u , v, w, ) S (u , v, w, ) L z
cn (w) 1 + S C100 (u , v, w, ) 000
C000 (u , v,W , ) d W d w d v d u d

P (u , v, w, T )
kT
0

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)

n
F
c
x
c
y
c
z
e
t
e

c
u

nC
n s n (v ) 1 + S L g S L (u , v, w, T )
nC n
n
n
nC
2
L x L y L z n =1
0
0
0
0

c n (w )

1
(u , v , w , ) L z
S (u , v , w , )
C 000
1 + S C 100 (u , v , w , )
C 000 (u , v , W , ) d W d w d v d u d ;
kT
P (u , v , w , T ) 0

C011 ( x, y, z , t ) =
cn (w )

Ly
Lx
Lz
t
2 D0 L
C (u , v, w, )

n FnC cn ( x )cn ( y )cn (z ) enC (t ) enC ( ) s n (u ) cn (v ) 000

2
Lx L y Lz n =1
0
0
0
0 P (u , v, w, T )

Lx
t
C001 (u , v, w, )
2 D0 L
d wd v d u d
n FnC cn (x ) cn ( y )cn ( z )enC (t ) enC ( ) cn (u )
2
u
Lx L y Lz n =1
0
0

Ly

Lz

Lz

sn (v ) cn (w) cn (w )
t

Lx

(u, v, w, ) C001 (u, v, w, ) d w d v d u d 2 D0 L n F c (x )c ( y )

C 000
nC n
n

P (u , v, w, T )
v
Lx L y L2z n =1
Ly

Lz

cn (z )enC (t ) enC ( ) cn (u ) cn (v ) sn (w)

Lx

Ly

n =1

Lz
0

(u, v, w, ) C001 (u, v, w, ) d w d v d u d 2 D0 L

C000
P (u , v, w, T )
w
L2x Ly Lz

FnC enC ( ) sn (u ) cn (v ) cn (w)C001 (u , v, w, )

n cn (x )cn ( y )cn (z )enC (t )

n FnC cn (w)

1
(u , v, w, ) C000 (u, v, w, ) d w d v d u d
C000

P (u , v, w, T )
u

Ly
Lx
Lz
t
2 D0 L
(
)
(
)
(
)
(
)
(
)
(
)
(
)
c
x
c
y
c
z
e
t
e

c
u
s
v

C001 (u , v, w, )
n
n
n
nC
nC
n
n
Lx L2y Lz n =1
0
0
0
0

1
(u, v, w, ) C000 (u, v, w, ) d w d v d u d 2 D0 L n c (x )c ( y )c (z )e (t )
C000
n
n
n
nC

P (u , v, w, T )
v
Lx L y L2z n =1

Lx

Ly

Lz

FnC enC ( ) cn (u ) cn (v ) sn (w)C001 (u , v, w, )

1
(u, v, w, ) C000 (u, v, w, ) d w d v d u d
C000

P (u , v, w, T )
w

Ly
Lx
Lz
t
2 D0 L
n FnC c n ( x ) c n ( y ) c n (z ) e nC (t ) e nC ( ) s n (u ) c n (v ) c n (w) 1 + S L g S L (u, v, w, T )
2
L x L y L z n =1
0
0
0
0

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Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 1, No. 1, June 2015

C (u , v, w, ) S (u , v, w, ) Lz
2 D0 L
1 + S 000
FnC
C 010 (u , v,W , ) d W d w d v d u d

P (u , v, w, T )
kT
Lx L2y Lz n =1
0

Ly
Lx
Lz
t

C (u , v, w, )
n cn (x )cn ( y )cn (z )enC (t ) enC ( ) cn (u ) s n (v ) 1 + S L g S L (u , v, w, T ) 1 + S 000

P (u , v, w, T )
0
0
0
0

(u , v, w, ) Lz
2 D0 L
cn (w) S
FnC cn ( x )cn ( y ) cn (z )
C010 (u , v,W , ) d W d w d v d u d 2
kT
Lx Ly Lz n =1
0

Ly
Lx
Lz
t

C 1 (u , v, w, )
n enC (t ) enC ( ) sn (u ) cn (v ) cn (w) 1 + S L g S L (w, T ) 1 + S C 010 (u , v, w, ) 000

P (u , v, w, T )
0
0
0
0

(u , v, w, ) Lz
2 D0 L
S
n cn (x )cn ( y ) cn (z ) enC (t )
C000 (u , v,W , ) d W d w d v d u d
kT
Lx L2y Lz n =1
0

Lx

Ly

Lz

Lz

FnC e nC ( ) c n (u ) s n (v ) c n (w ) 1 + S L g S L (u , v, w, T ) C 000 (u , v, W , ) d W
0

C (u , v, w, ) S (u , v, w, )
1 + S C 010 (u , v, w, ) 000
d wd vd u d .

P (w, T )
kT

Author
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Radiophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radiophysics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Microstructures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgorod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor
course in Radiophysical Department of Nizhny Novgorod State University. He has 96 published papers in
area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
Center for gifted children. From 2009 she is a student of Nizhny Novgorod State University of Architecture and Civil Engineering (spatiality Assessment and management of real estate). At the same time she
is a student of courses Translator in the field of professional communication and Design (interior art) in
the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant MK-548.2010.2).
She has 29 published papers in area of her researches.

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