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INTRODUCTION
Domain engineering is a very important technique for
obtaining enhanced piezoelectric and ferroelectric properties in ferroelectric single crystals. In [001] oriented
c
rhombohedral PZNPT single crystals, ultrahigh piezoelectric activity was found by Park et al.13 and Kuwata
et al.,4,5 with strain >17%, piezoelectric constant d
33
>2500 pC N1, electromechanical coupling factor k
33
>93% and hysteresis free strain v. electric field behaviour.
These ultrahigh piezoelectric properties resulted from the
use of a domain engineering technique. This technique
utilises the anisotropy of ferroelectric single crystals, however crystal structure is also very important.6
Single crystals of BaTiO have tetragonal P4mm phase
3
at room temperature. To induce an engineered domain
configuration into tetragonal crystals, E field should be
applied along the [111] direction as shown in Fig. 1. In
c
this manner, piezoelectric properties have been investigated
DOI 10.1179/096797804225012747
bct0000707 12-03-04 17:48:28 Rev 14.05
The Charlesworth Group, Huddersfield 01484 517077
EXPERIMENTAL PROCEDURES
BaTiO single crystals were grown by a top seeded solution
3
growth (TSSG) method at Fujikura Ltd. In TSSG grown
BaTiO single crystals, the concentration of most impurities
3
(Cr, Mn, Fe, Co, Ni, Cu) is below 23 ppm. The details of
preparation of BaTiO single crystals and their characteris3
ation are described elsewhere.1113 These crystals were
oriented along the [111] direction using a back reflection
c
Laue method.
For in situ domain observation at various E fields and
temperatures, crystals were prepared by cutting and
polishing to an optimum size of 020520 mm
(02 mm//[1-10] , 05 mm//[111] , 2 mm//[11-2] ). Top
c
c
c
and bottom surfaces (0520 mm) were mirror polished
to give a thickness between top and bottom of #200 mm
along an incident direction of light. Gold electrodes
were sputtered on both sides (0220 mm) parallel to the
light. Domain configuration was always observed under
crossed nicols using a polarising microscope (Nikon,
Labophoto2-POL). A unipolar E field exposure was carried
out along the [111] direction, normal to incident polarised
c
light, using a Kepco BOP-1000M high voltage dc amplifier.
The crystal was placed in a cryostat with an optical isotropic
glass window (Linkam, LK-600PM) in dry air. Temperature
just below the bottom of the crystal was measured, and
then changed from 0 to 200C at a rate of 041 K min1.
The temperature in the cryostat was measured to an
accuracy of 01C and controlled to within 0.1C.
For piezoelectric measurement using 31 resonators,
BaTiO single crystals were sized to 4.01.20.4 mm
3
(40 mm//[1-10] , 12 mm//[11-2] , 04 mm//[111] ) by
c
c
c
cutting and polishing using fine Al O powders. Gold
2 3
electrodes were sputtered on both sides (4012 mm).
Poling treatment for the preparation of BaTiO crystals
3
with different domain sizes was performed on the basis of
the observed dependence of domain size on E field and
temperature. After poling, domain configuration was
investigated using polarised light microscopy. Finally,
piezoelectric properties were measured using an impedance
analyser (Agilent, HP-4294A) by a conventional resonance
antiresonance method.14
British Ceramic Transactions 2004 Vol. 103 No. 2
bct0000707 12-03-04 17:48:28 Rev 14.05
The Charlesworth Group, Huddersfield 01484 517077
CONCLUSIONS
eT
33
sE ,
11
pm2 N1
d ,
31
pC N1
k ,
31
%
129
2185
2087
2441
1700
74
737
768
880
164
33.4
620
978
1347
1801
1710
259
357
414
344
ACKNOWLEDGEMENTS
The authors would like to thank Mr O. Nakao of Fujikura
Ltd for preparing TSSG grown BaTiO single crystals with
3
excellent chemical quality, Dr J. Erhart of ICPR of the
Technical University of Liberec for helpful discussions on
the analysis of domain configuration, and especially Dr
L. E. Cross, Dr T. R. Shrout and Dr S.-E. Eagle Park for
the opportunity to study engineered domain configurations.
This study was partially supported by the Japan Securities
Scholarship Foundation.
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