Si4483ADY

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY
RDS(on) ()

ID (A)d

0.0088 at VGS = - 10 V

- 19.2

0.0153 at VGS = - 4.5 V

- 14.6

VDS (V)
- 30

Halogen-free According to IEC 61249-2-21

Definition
TrenchFET Power MOSFET
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC

Qg (Typ.)
44.8 nC

APPLICATIONS

SO-8

Adaptor Switch
S

Top View

D
P-Channel MOSFET

Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

Parameter

Symbol

Limit

Drain-Source Voltage

VDS

- 30

Gate-Source Voltage

VGS

25

TC = 25 C
Continuous Drain Current (TJ = 150 C)

- 15.4

ID

TA = 25 C

- 13.5a, b
- 10.9a, b

IDM

Pulsed Drain Current

Avalanche Current
Single-Pulse Avalanche Energy

Maximum Power Dissipation

TC = 25 C

- 2.4a, b

IAS

20

EAS

20

TC = 25 C

5.9

TC = 70 C

3.8

PD

TA = 25 C

mJ

2.9a, b

1.9a, b

TA = 70 C
TJ, Tstg

Operating Junction and Storage Temperature Range

- 70
- 4.9

IS

TA = 25 C
L = 0.1 mH

- 19.2

TC = 70 C
TA = 70 C

Continuous Source-Drain Diode Current

Unit

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot

Symbol

Typical

Maximum

t 10 s

RthJA

33

42

Steady State

RthJF

16

21

Unit
C/W

Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 C/W.
d. Based on TC = 25 C.
Document Number: 68982
S10-2543-Rev. B, 08-Nov-10

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Si4483ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
Parameter

Symbol

Test Conditions

Min.

VDS

VGS = 0 V, ID = - 250 A

- 30

Typ.

Max.

Unit

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS/TJ

V
- 30

ID = - 250 A

mV/C

VGS(th) Temperature Coefficient

VGS(th)/TJ

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 A

- 2.6

IGSS

VDS = 0 V, VGS = 25 V

100

nA

VDS = - 30 V, VGS = 0 V

-1

VDS = - 30 V, VGS = 0 V, TJ = 55 C

-5

Gate-Source Leakage
Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-State Resistancea

Forward Transconductancea

RDS(on)
gfs

VDS - 10 V, VGS = - 10 V

5.3
- 1.2

- 2.1

- 30

A
A

VGS = - 10 V, ID = - 10 A

0.0073

0.0088

VGS = - 4.5 V, ID = - 7 A

0.0127

0.0153

VDS = - 10 V, ID = - 10 A

32

Dynamic

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

Rg

Turn-On Delay Time

Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time

3900
VDS = - 15 V, VGS = 0 V, f = 1 MHz

td(off)

pF

645
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A

90

135

44.8

68

12.2

f = 1 MHz
VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 10 V, Rg = 1

0.4

1.8

3.6

14

28

13

25

49

90

tf

13

25

td(on)

70

120

150

280

43

80

28

55

tr
td(off)

nC

21.7

td(on)
tr

715

VDD = - 15 V, RL = 1.5
ID - 10 A, VGEN = - 4.5 V, Rg = 1

tf

ns

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

IS

Pulse Diode Forward Current

ISM

Body Diode Voltage

VSD

TC = 25 C

- 4.9
- 70

IS = - 3 A, VGS = 0 V

- 0.72

- 1.2

A
V

Body Diode Reverse Recovery Time

trr

41

70

ns

Body Diode Reverse Recovery Charge

Qrr

41

70

nC

Reverse Recovery Fall Time

ta

Reverse Recovery Rise Time

tb

IF = - 10 A, dI/dt = 100 A/s, TJ = 25 C

18
23

ns

Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 68982

S10-2543-Rev. B, 08-Nov-10

Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
70

10
VGS = 10 V thru 5 V
8

42

I D - Drain Current (A)

I D - Drain Current (A)

56

VGS = 4 V

28

14

4
TC = 25 C
2
TC = 125 C

0
0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

0.030

6000

0.024

4800
Ciss

C - Capacitance (pF)

R DS(on) - On-Resistance ()

TC = - 55 C

0.018
VGS = 4.5 V
0.012
VGS = 10 V

3600

2400
Coss

0.006

1200
Crss

0
0

14

28

42

56

70

12

18

24

ID - Drain Current (A)

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

30

1.8

10
ID = 10 A

ID = 10 A

VDS = 10 V

VDS = 15 V

4
VDS = 20 V

1.5
(Normalized)

R DS(on) - On-Resistance

VGS - Gate-to-Source Voltage (V)

VGS = 10 V
1.2
VGS = 4.5 V
0.9

0
0

20

40

60

Qg - Total Gate Charge (nC)

Gate Charge

Document Number: 68982

S10-2543-Rev. B, 08-Nov-10

80

100

0.6
- 50

- 25

25

50

75

100

125

150

TJ - Junction Temperature (C)

On-Resistance vs. Junction Temperature

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Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
100

0.10
ID = 10 A
TJ = 150 C

R DS(on) - On-Resistance ()

I S - Source Current (A)

10

TJ = 25 C

0.1

0.01

0.08

0.06

0.04
TJ = 125 C
0.02
TJ = 25 C

0.001
0.0

0.00
0.2

0.4

0.6

0.8

1.0

1.2

10

VGS - Gate-to-Source Voltage (V)

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.8

200

0.6

160

0.4
Power (W)

VGS(th) Variance (V)

ID = 250 A

ID = 1 mA

0.2

120

80

0.0
40

- 0.2

- 0.4
- 50

0
- 25

25

50

75

100

125

150

0.001

0.01

TJ - Temperature (C)

0.1

10

Time (s)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*

1 ms

I D - Drain Current (A)

10
10 ms
1
100 ms
1s
10 s

0.1
TA = 25 C
Single Pulse
0.01
0.01

0.1

DC
BVDSS Limited
1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

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Document Number: 68982

S10-2543-Rev. B, 08-Nov-10

Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
22.0

I D - Drain Current (A)

17.6

13.2

8.8

4.4

0.0
0

25

50

75

100

125

150

TC - Case Temperature (C)

8.0

2.0

6.4

1.6

Power (W)

Power (W)

Current Derating*

4.8

3.2

1.6

1.2

0.8

0.4

0.0

0.0
0

25

50

75

100

TC - Case Temperature (C)

Power, Junction-to-Foot

125

150

25

50

75

100

125

150

TA - Ambient Temperature (C)

Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 68982

S10-2543-Rev. B, 08-Nov-10

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Si4483ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1

Notes:

0.1
PDM

0.05
t1
t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = RthJA = 85 C/W

0.02

3. TJM - TA = PDMZthJA(t)

Single Pulse
0.01
10 -4

10 -3

4. Surface Mounted

10 -2

10 -1
1
Square Wave Pulse Duration (s)

100

10

1000

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1
0.05

0.02
Single Pulse
0.01
10 -4

10 -3

10 -2

10 -1

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68982.

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Document Number: 68982

S10-2543-Rev. B, 08-Nov-10

Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

E
1

h x 45

C
0.25 mm (Gage Plane)
A

All Leads
q

A1

0.004"

MILLIMETERS

INCHES

DIM

Min

Max

Min

Max

1.35

1.75

0.053

0.069

A1

0.10

0.20

0.004

0.008

0.35

0.51

0.014

0.020

0.19

0.25

0.0075

0.010

4.80

5.00

0.189

0.196

3.80

4.00

0.150

0.101 mm

1.27 BSC

0.157
0.050 BSC

5.80

6.20

0.228

0.244

0.25

0.50

0.010

0.020

0.50

0.93

0.020

0.037

0.44

0.64

0.018

0.026

ECN: C-06527-Rev. I, 11-Sep-06

DWG: 5498

Document Number: 71192

11-Sep-06

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VISHAY SILICONIX

TrenchFET Power MOSFETs

Application Note 808

Mounting LITTLE FOOT, SO-8 Power MOSFETs

Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use
integrated circuit and small-signal packages which have
been been modified to provide the heat transfer capabilities
required by power devices. Leadframe materials and
design, molding compounds, and die attach materials have
been changed, while the footprint of the packages remains
the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/ppg?72286), for the
basis of the pad design for a LITTLE FOOT SO-8 power
MOSFET. In converting this recommended minimum pad
to the pad set for a power MOSFET, designers must make
two connections: an electrical connection and a thermal
connection, to draw heat away from the package.

0.288
7.3

0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98

0.2
5.07

Figure 1. Single MOSFET SO-8 Pad

Pattern With Copper Spreading
Document Number: 70740
Revision: 18-Jun-07

0.050
1.27

0.088
2.25

0.088
2.25

0.027
0.69
0.078
1.98

0.2
5.07

Figure 2. Dual MOSFET SO-8 Pad Pattern

With Copper Spreading

The minimum recommended pad patterns for the

single-MOSFET SO-8 with copper spreading (Figure 1) and
dual-MOSFET SO-8 with copper spreading (Figure 2) show
the starting point for utilizing the board area available for the
heat-spreading copper. To create this pattern, a plane of
copper overlies the drain pins. The copper plane connects
the drain pins electrically, but more importantly provides
planar copper to draw heat from the drain leads and start the
process of spreading the heat so it can be dissipated into the
ambient air. These patterns use all the available area
underneath the body for this purpose.
Since surface-mounted packages are small, and reflow
soldering is the most common way in which these are
affixed to the PC board, thermal connections from the
planar copper to the pads have not been used. Even if
additional planar copper area is used, there should be no
problems in the soldering process. The actual solder
connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the
drain pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces.
The absolute minimum power trace width must be
determined by the amount of current it has to carry. For
thermal reasons, this minimum width should be at least
0.020 inches. The use of wide traces connected to the drain
plane provides a low impedance path for heat to move away
from the device.
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APPLICATION NOTE

In the case of the SO-8 package, the thermal connections

are very simple. Pins 5, 6, 7, and 8 are the drain of the
MOSFET for a single MOSFET package and are connected
together. In a dual package, pins 5 and 6 are one drain, and
pins 7 and 8 are the other drain. For a small-signal device or
integrated circuit, typical connections would be made with
traces that are 0.020 inches wide. Since the drain pins serve
the additional function of providing the thermal connection
to the package, this level of connection is inadequate. The
total cross section of the copper may be adequate to carry
the current required for the application, but it presents a
large thermal impedance. Also, heat spreads in a circular
fashion from the heat source. In this case the drain pins are
the heat sources when looking at heat spread on the PC
board.

0.288
7.3

Application Note 826

Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028

0.022

0.050

(0.559)

(1.270)

0.152

(3.861)

0.047

(1.194)

0.246

(6.248)

(0.711)

Recommended Minimum Pads

Dimensions in Inches/(mm)
Return to Index

APPLICATION NOTE

Return to Index

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Document Number: 72606

Revision: 21-Jan-08

Legal Disclaimer Notice

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Vishay

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000