SM4319PSK Datasheet PDF

SM4319PSK
P-Channel Enhancement Mode MOSFET
Features
Pin Description
D
-30V/-11A,
RDS(ON ) = 14m(max.) @ VGS = -10V

RDS(ON) = 25m(max.) @ VGS = -4.5V
Super High Dense Cell Design

Reliable and Rugged
Top View of SOP-8
Lead Free and Green Devices Available

( 5,6,7,8 )
D D DD
(RoHS Compliant)
Applications
(4)
G
Power Management in Notebook Computer,

Portable Equipment and Battery Powered
Systems.
S S S
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information

Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM4319PS
Assembly Material
Handling Code
Temperature Range
Package Code
SM4319PS K :
SM4319
XXXXX
XXXXX - Date Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - Feb., 2011
www.sinopowersemi.com
SM4319PSK
Absolute Maximum Ratings

Symbol
(TA = 25C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
25
ID
IDM
Continuous Drain Current
Pulsed Drain Current
a
IS
IAR
-11
TA=70C
-9
VGS=-10V
-40
Diode Continuous Forward Current
-2.7
Avalanche Current
20.5
Repetitive Avalanche Energy (L=0.3mH)
63
Maximum Junction Temperature
150
EAR
TJ
TSTG
PD
TA=25C
Storage Temperature Range
RJA
RJL
mJ
C
-55 to 150
TA=25C
2.5
TA=70C
1.6
Thermal Resistance-Junction to Ambient
t 10s
50
Thermal Resistance-Junction to Lead
Steady State
25
Maximum Power Dissipation
a,c
Unit
W
C/W
Notes aSurface Mounted on 1in pad area, t 10sec.

Notes bUSI tested and pulse width limited by maximum junction temperature 150C (initial temperature Tj=25C).
Notes cmaximum under Steady State conditions is 75 C/W.
2
Electrical Characteristics
Symbol
Parameter
Test Conditions
SM4319PSK
Min.
Typ.
Max.
-30
-1
-30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VGS=0V, IDS=-250A
VDS=-24V, V GS=0V
TJ=85C
V
A
Gate Threshold Voltage
VDS=VGS, I DS=-250A
-1
-2
-2.5
Gate Leakage Current
VGS=25V, V DS=0V
100
nA
VGS=-10V, IDS=-11A
11
14
VGS=-4.5V, I DS=-10A
18
25
ISD =-2.7A, VGS=0V
-0.75
-1.1
23
ns
14
nC
Drain-Source On-state Resistance
Diode Characteristics
d
VSD
Diode Forward Voltage
e
trr
Reverse Recovery Time
e
qrr
Reverse Recovery Charge

Rev. A.2 - Feb., 2011
ISD =-11A, dlSD /dt=100A/s
SM4319PSK
Electrical Characteristics (Cont.)

Symbol
Parameter
Test Conditions
SM4319PSK
Min.
Typ.
Max.
Unit
Dynamic Characteristics e
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
2060
Coss
Output Capacitance
330
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
290
td(ON)
Turn-on Delay Time
13
14
78
37
42
10
tr
Turn-on Rise Time
t d(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics

Qg
VDD =-15V, R L=15,

I DS=-1A, VGEN =-10V,
RG=6
pF
ns
Total Gate Charge
Q gs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-15V, VGS=-10V,
I DS=-11A
nC
Note d : Pulse test ; pulse width300s, duty cycle2%.

Note e : Guaranteed by design, not subject to production testing.

Rev. A.2 - Feb., 2011
SM4319PSK
Typical Operating Characteristics

Drain Current
3.0
12
2.5
10
-ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
2.0
1.5
1.0
0.5
2
o
0.0
TA=25 C
0
20
40
60
80 100 120 140 160
TA=25 C,VG=-10V
0
20
Safe Operation Area
60
80 100 120 140 160
Thermal Transient Impedance

2
10
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
100
40
Tj - Junction Temperature (C)
300s
1ms
10ms
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
0.1
10
100
-VDS - Drain - Source Voltage (V)

Rev. A.2 - Feb., 2011
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
Mounted on 1in pad

o
RJA : 50 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
SM4319PSK
Typical Operating Characteristics (Cont.)

Output Characteristics
Drain-Source On Resistance
40
32
VGS= -4.5,-5,-6,-7,-8,-9,-10V
30
RDS(ON) - On - Resistance (m)
35
-4V
25
20
15
-3.5V
10
28
24
VGS=-4.5V
20
16
VGS=-10V
12
8
4
5
-3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
16
24
Gate-Source On Resistance
Gate Threshold Voltage

IDS= -250A
IDS=-11A
1.4
35
Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)
40
1.6
40
30
25
20
15
10
5
32
-VDS - Drain-Source Voltage (V)
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)

Rev. A.2 - Feb., 2011
1.2
25
50
75
100 125 150
SM4319PSK

Drain-Source On Resistance
Source-Drain Diode Forward
1.8
40
VGS = -10V
IDS = -11A
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
10
Tj=150 C
Tj=25 C
1
0.4
o
0.2
-50 -25
RON@Tj=25 C: 11m
0
25
50
75
0.1
0.0
100 125 150
0.8 1.0
1.2 1.4
Capacitance
Gate Charge
-VGS - Gate - source Voltage (V)
2400
2100
Ciss
1800
1500
1200
900
600
Coss
300 Crss
1.6
10
2700
C - Capacitance (pF)
0.6
-VSD - Source - Drain Voltage (V)
Frequency=1MHz
0.4
3000
0.2
VDS= -15V
9 I = -11A
DS
8
7
6
5
4
3
2
1
10
15
20
25
0
0
30
-VDS - Drain - Source Voltage (V)

Rev. A.2 - Feb., 2011
18
27
36
45
QG - Gate Charge (nC)
SM4319PSK

Transfer Characteristics
50
45
40
Tj=25 C
35
Tj=125 C
30
25
20
15
10
Tj=55 C
5
0
-VGS - Gate-Source Voltage (V)

Rev. A.2 - Feb., 2011
SM4319PSK
Package Information
SOP-8
-T-
SEATING PLANE < 4 mils
E1
SEE VIEW A
h X 45
0.25
GAUGE PLANE
SEATING PLANE
A1
A2
L
VIEW A
S
Y
M
B
O
L
SOP-8
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
1.75
0.069
0.010
0.004
0.25
A1
0.10
A2
1.25
0.31
0.51
0.012
0.020
0.17
0.25
0.007
0.010
4.80
5.00
0.189
0.197
5.80
6.20
0.228
0.244
3.80
4.00
0.150
0.157
0.25
0.50
0.010
0.020
0.40
1.27
0.016
0.050
E1
e
0.049
1.27 BSC
0.050 BSC
Note: 1. Follow JEDEC MS-012 AA.

2. Dimension D does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension E does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.

Rev. A.2 - Feb., 2011
SM4319PSK
Carrier Tape & Reel Dimensions

P0
P2
P1
B0
E1
OD0
K0
A0
OD1 B
SECTION A-A
SECTION B-B
H
A
T1
Application
330.02.00 50 MIN.
SOP-8
T1
C
d
D
W
E1
12.4+2.00 13.0+0.50
-0.00
-0.20 1.5 MIN. 20.2 MIN. 12.00.30 1.750.10
P0
P1
P2
4.00.10
8.00.10
2.00.05
D0
1.5+0.10
-0.00
D1
1.5 MIN.
F
5.50.05
T
A0
B0
K0
0.6+0.00 6.400.20 5.200.20 2.100.20
-0.40
(mm)
Devices Per Unit

Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500

Rev. A.2 - Feb., 2011
SM4319PSK
Taping Direction Information

SOP-8
USER DIRECTION OF FEED
Classification Profile

Rev. A.2 - Feb., 2011
10
SM4319PSK
Classification Reflow Profiles

Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
3 C/second max.
3C/second max.
183 C
60-150 seconds
217 C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5C of the specified

classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak

Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)

3
Package
Volume mm
Thickness
<350
<2.5 mm
235 C
2.5 mm
Volume mm
350
220 C
220 C
220 C
Table 2. Pb-free Process Classification Temperatures (Tc)

Package
Thickness
<1.6 mm
1.6 mm 2.5 mm
2.5 mm
Volume mm
<350
260 C
260 C
250 C
Volume mm
350-2000
260 C
250 C
245 C
Volume mm
>2000
260 C
245 C
245 C
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245C
1000 Hrs, Bias @ 125C
168 Hrs, 100%RH, 2atm, 121C
500 Cycles, -65C~150C
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050

Rev. A.2 - Feb., 2011
11

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SM4319PSK

P-Channel Enhancement Mode MOSFET

RDS(ON ) = 14m(max.) @ VGS = -10V

Super High Dense Cell Design

Top View of SOP-8

Lead Free and Green Devices Available

Power Management in Notebook Computer,

Ordering and Marking Information

XXXXX - Date Code

Absolute Maximum Ratings

(TA = 25C unless otherwise noted)

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Repetitive Avalanche Energy (L=0.3mH)

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance-Junction to Ambient

Thermal Resistance-Junction to Lead

Maximum Power Dissipation

Notes aSurface Mounted on 1in pad area, t 10sec.

(TA = 25C unless otherwise noted)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Gate Leakage Current

ISD =-2.7A, VGS=0V

Drain-Source On-state Resistance

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Copyright Sinopower Semiconductor, Inc.

ISD =-11A, dlSD /dt=100A/s

Electrical Characteristics (Cont.)

(TA = 25C unless otherwise noted)

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

VDD =-15V, R L=15,

Total Gate Charge

Note d : Pulse test ; pulse width300s, duty cycle2%.

Copyright Sinopower Semiconductor, Inc.

Typical Operating Characteristics

-ID - Drain Current (A)

Ptot - Power (W)

80 100 120 140 160

Safe Operation Area

80 100 120 140 160

Thermal Transient Impedance

Normalized Transient Thermal Resistance

-ID - Drain Current (A)

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

-VDS - Drain - Source Voltage (V)

Copyright Sinopower Semiconductor, Inc.

Mounted on 1in pad

Square Wave Pulse Duration (sec)

Typical Operating Characteristics (Cont.)

RDS(ON) - On - Resistance (m)

-ID - Drain Current (A)