2N6400 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
halfwave silicon gatecontrolled, solidstate devices are needed.

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Features

SCRs
16 AMPERES RMS
50 thru 800 VOLTS

Glass Passivated Junctions with Center Gate Geometry for Greater

Parameter Uniformity and Stability

Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
PbFree Packages are Available*

G
A

MARKING
DIAGRAM

4
TO220AB
CASE 221A
STYLE 3

AY WW
640x

1
2
3
x
A
Y
WW

= 0, 1, 2, 3, 4 or 5
= Assembly Location
= Year
= Work Week

PIN ASSIGNMENT
1

Cathode

Anode

Gate

Anode

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004

December, 2004 Rev. 3

Publication Order Number:

2N6400/D

2N6400 Series
MAXIMUM RATINGS* (TJ = 25C unless otherwise noted)
Symbol

Rating
Peak Repetitive OffState Voltage (Note 1)
(TJ =
40 to 125C, Sine Wave 50 to 60 Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405

VDRM,
VRRM

On-State Current RMS (180 Conduction Angles; TC = 100C)

Value

Unit
V

50
100
200
400
600
800
IT(RMS)

16

Average On-State Current (180 Conduction Angles; TC = 100C)

IT(AV)

10

Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 90C)

ITSM

160

I2t

145

A2s

Circuit Fusing Considerations (t = 8.3 ms)

Forward Peak Gate Power (Pulse Width 1.0 s, TC = 100C)

PGM

20

PG(AV)

0.5

IGM

2.0

Operating Junction Temperature Range

TJ

40 to +125

Storage Temperature Range

Tstg

40 to +150

Forward Average Gate Power (t = 8.3 ms, TC = 100C)

Forward Peak Gate Current (Pulse Width 1.0 s, TC = 100C)

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, JunctiontoCase

Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds

Max

Unit

RJC

1.5

C/W

TL

260

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)

Symbol

Characteristic

Min

Typ

Max

Unit

10
2.0

A
mA

OFF CHARACTERISTICS
* Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25C
TJ = 125C

IDRM,
IRRM

ON CHARACTERISTICS
*Peak Forward OnState Voltage (ITM = 32 A Peak, Pulse Width 1 ms, Duty Cycle 2%)

VTM

1.7

* Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100
)

IGT

9.0

30
60

mA

0.7

1.5
2.5

* Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100
)

TC = 25C
TC = 40C

VGT
TC = 25C
TC = 40C

Gate NonTrigger Voltage (VD = 12 Vdc, RL = 100
), TC = +125C

VGD

0.2

* Holding Current
TC = 25C
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
*TC = 40C

IH

18

40

mA

60

Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)

tgt

1.0

Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)

TC = 25C
TJ = +125C

tq

15
35

50

s
s

DYNAMIC CHARACTERISTICS
Critical RateofRise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform)
TJ = +125C
*Indicates JEDEC Registered Data.

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dv/dt

V/s

2N6400 Series
Voltage Current Characteristic of SCR
+ Current

Symbol

Parameter

VDRM

Peak Repetitive Off State Forward Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Off State Reverse Voltage

IRRM

Peak Reverse Blocking Current

VTM

Peak On State Voltage

IH

Holding Current

Anode +
VTM

on state
IH

IRRM at VRRM

Reverse Blocking Region

(off state)
Reverse Avalanche Region

+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)

Anode

16

124

P(AV) , AVERAGE POWER (WATTS)

TC, MAXIMUM CASE TEMPERATURE ( C)

128

= CONDUCTION ANGLE

120
116
112

dc
108
104
100

= 30
0

60

90

180

120

7.0
5.0 6.0
1.0 2.0
3.0 4.0
8.0 9.0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

180

14

TJ 125C

12

Figure 1. Average Current Derating

120

dc

60

10

= 30

8.0
6.0
4.0

= CONDUCTION ANGLE

2.0

10

90

5.0
6.0
1.0
2.0
3.0 4.0
7.0
8.0 9.0
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

10

Figure 2. Maximum OnState Power Dissipation

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3

2N6400 Series
200

100

50
30
20
TJ = 25C
10
125C

7.0
5.0

160

3.0
2.0

150

140

1.0
0.7

130

0.5

TJ = 125C
f = 60 Hz

120

0.3

SURGE IS PRECEDED AND

FOLLOWED BY RATED CURRENT

110

0.2
0.4

0.8 1.2
1.6
2.0
2.4 2.8
4.0
3.2
3.6
vTM, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)

1.0

4.4

2.0

3.0

4.0

6.0

8.0

10

NUMBER OF CYCLES

Figure 3. OnState Characteristics

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1 CYCLE

I TSM , PEAK SURGE CURRENT (AMP)

iTM , INSTANTANEOUS ONSTATE FORWARD CURRENT (AMPS)

70

Figure 4. Maximum NonRepetitive Surge Current

1.0
0.7
0.5
0.3
0.2

ZJC(t) = RJC r(t)

0.1
0.07
0.05
0.03
0.02
0.01
0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20 30
50
t, TIME (ms)

100

Figure 5. Thermal Response

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4

200 300

500

1.0 k

2.0 k 3.0 k 5.0 k

10 k

2N6400 Series
TYPICAL CHARACTERISTICS

OFF-STATE VOLTAGE = 12 V
RL = 50

30
20

TJ = 40C

10
7.0
5.0

25C

3.0
2.0

125C

100
I GT, GATE TRIGGER CURRENT (mA)

i GT, PEAK GATE CURRENT (mA)

100
70
50

1.0
0.2

0.5

1.0

2.0

5.0 10
20
PULSE WIDTH (ms)

50

100

10

1
40 25

200

5
20
35
50 65
80
TJ, JUNCTION TEMPERATURE (C)

95

110 125

Figure 7. Typical Gate Trigger Current

versus Junction Temperature

Figure 6. Typical Gate Trigger Current

versus Pulse Width

1.0

100

0.9
IH , HOLDING CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

10

0.8
0.7
0.6
0.5
0.4

10

0.3
0.2
40 25 10

20

35

50

65

80

95

110

1
40 25 10

125

20

35

50

65

80

95

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 8. Typical Gate Trigger Voltage

versus Junction Temperature

Figure 9. Typical Holding Current

versus Junction Temperature

110 125

ORDERING INFORMATION
Device

Package

2N6400

TO220AB

2N6401

TO220AB

2N6401G

TO220AB
(PbFree)

2N6402

TO220AB

2N6403

TO220AB

2N6404

TO220AB

2N6405

TO220AB

2N6405G

TO220AB
(PbFree)

Shipping

500 Units / Box

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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5

2N6400 Series
PACKAGE DIMENSIONS

TO220AB
CASE 221A09
ISSUE AA

SEATING
PLANE

Q
1 2 3

H
K

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Z
L
V

G
D

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 3:
PIN 1.
2.
3.
4.

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

CATHODE
ANODE
GATE
ANODE

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION

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Phone: 81357733850

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For additional information, please contact your

local Sales Representative.

2N6400/D

This datasheet has been download from:

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