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Vishay Siliconix
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.0052 at VGS = 10 V
24.5
21.7
VDS (V)
30
Qg (Typ.)
21.5 nC
APPLICATIONS
Buck Converter
Synchronous Rectifier
- Secondary Rectifier
Notebook
SO-8
S
S
S
G
G
Top View
S
Ordering Information: Si4634DY-T1-E3 (Lead (Pb)-free)
Si4634DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
Symbol
VDS
VGS
TC = 25 C
TC = 70 C
TA = 25 C
TA = 70 C
ID
IDM
IS
L = 0.1 mH
IAS
EAS
TC = 25 C
TC = 70 C
TA = 25 C
TA = 70 C
PD
Limit
30
20
24.5
19.5
Unit
V
16.3b, c
13.0b, c
70
5.1
2.2b, c
30
45
5.7
3.6
mJ
2.5b, c
1.6b, c
- 55 to 150
TJ, Tstg
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
C/W
Notes:
a. Based on TC = 25 C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 C/W.
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1
Si4634DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 A
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
V
33
ID = 250 A
mV/C
VGS(th)/TJ
VGS(th)
2.6
IGSS
VDS = 0 V, VGS = 20 V
100
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
ID(on)
RDS(on)
gfs
VDS 5 V, VGS = 10 V
- 6.4
1.4
30
A
A
VGS = 10 V, ID = 15 A
0.0043
0.0052
VGS = 4.5 V, ID = 10 A
0.0055
0.0067
VDS = 15 V, ID = 15 A
78
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
3150
VDS = 15 V, VGS = 0 V, f = 1 MHz
420
VDS = 15 V, VGS = 10 V, ID = 10 A
45.5
68
21.5
33
166
8.0
f = 1 MHz
0.75
1.5
tr
30
50
td(off)
30
33
55
10
20
14
25
10
20
33
55
16
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
tf
Fall Time
15
td(on)
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
tf
tr
Rise Time
nC
6.2
td(on)
Rise Time
pF
ns
Currenta
IS
TC = 25 C
5.1
ISM
VSD
70
IS = 3 A
0.75
1.1
A
V
trr
30
60
ns
Qrr
35
70
nC
ta
tb
20
10
ns
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
70
1.5
VGS = 10 thru 4 V
1.2
I D - Drain Current (A)
56
42
28
14
0.9
TC = 25 C
0.6
TC = 125 C
0.3
3V
TC = - 55 C
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
Output Characteristics
Transfer Characteristics
0.0075
3800
0.0067
3040
C - Capacitance (pF)
R DS(on) - On-Resistance ()
Ciss
VGS = 4.5 V
0.0059
0.0051
VGS = 10 V
2280
1520
0.0043
760
0.0035
0
0
14
28
42
56
70
Coss
Crss
0
12
18
24
Capacitance
10
ID = 15 A
VGS = 10 V
1.5
RDS(on) - On-Resistance
(Normalized)
VDS = 10 V
6
VDS = 15 V
VDS = 20 V
4
0
0.0
30
1.7
ID = 10 A
1.3
VGS = 4.5 V
1.1
0.9
9.6
19.2
28.8
38.4
48.0
0.7
- 50
- 25
25
50
75
100
125
Gate Charge
150
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Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.020
100
ID = 15 A
TJ = 150 C
R DS(on) - On-Resistance ()
10
TJ = 25 C
0.1
0.01
0.016
0.012
TA = 125 C
0.008
0.004
TA = 25 C
0.000
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
0.6
170
ID = 250 A
136
ID = 5 mA
Power (W)
0.3
- 0.3
102
68
- 0.6
- 0.9
- 50
34
0
- 25
25
50
75
100
125
150
0.001
0.01
0.1
TJ - Temperature (C)
Time (s)
Threshold Voltage
10
100
Limited by RDS(on)*
10
1 ms
10 ms
100 ms
1s
0.1
10 s
DC
TA = 25 C
Single Pulse
0.01
0.1
1
* VGS
10
100
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Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
27
22
16
11
0
0
25
50
75
100
125
150
7.0
1.80
5.6
1.44
Power (W)
Power (W)
Current Derating*
4.2
1.08
2.8
0.72
1.4
0.36
0.0
0
0
25
50
75
100
125
150
25
50
75
100
125
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Si4634DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
10
100
1000
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74030.
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6
Package Information
Vishay Siliconix
E
1
h x 45
C
0.25 mm (Gage Plane)
A
All Leads
q
A1
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
0.35
0.51
0.014
0.020
0.19
0.25
0.0075
0.010
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.101 mm
1.27 BSC
0.157
0.050 BSC
5.80
6.20
0.228
0.244
0.25
0.50
0.010
0.020
0.50
0.93
0.020
0.037
0.44
0.64
0.018
0.026
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VISHAY SILICONIX
0.288
7.3
0.050
1.27
0.196
5.0
0.027
0.69
0.078
1.98
0.2
5.07
0.050
1.27
0.088
2.25
0.088
2.25
0.027
0.69
0.078
1.98
0.2
5.07
APPLICATION NOTE
0.288
7.3
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
APPLICATION NOTE
Return to Index
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision: 02-Oct-12