2N4403

Preferred Device

General Purpose
Transistors
PNP Silicon
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Features

PbFree Packages are Available*

COLLECTOR
3
2
BASE

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

40

Vdc

Collector Base Voltage

VCBO

40

Vdc

Emitter Base Voltage

VEBO

5.0

Vdc

Collector Current Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

W
mW/C

TJ, Tstg

55 to +150

Operating and Storage Junction

Temperature Range

1
EMITTER

TO92
CASE 29
STYLE 1
1

12

3
STRAIGHT LEAD
BULK PACK

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, JunctiontoAmbient

RqJA

200

C/W

Thermal Resistance, JunctiontoCase

RqJC

83.3

C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

3
BENT LEAD
TAPE & REEL
AMMO PACK

MARKING DIAGRAM

2N
4403
AYWW G
G

2N4403 = Device Code

A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2007

March, 2007 Rev. 3

Preferred devices are recommended choices for future

use and best overall value.

Publication Order Number:

2N4403/D

2N4403
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

Vdc

CollectorBase Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

40

Vdc

(IE = 0.1 mAdc, IC = 0)

EmitterBase Breakdown Voltage

V(BR)EBO

5.0

Vdc

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

IBEV

0.1

mAdc

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

ICEX

0.1

mAdc

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 2.0 Vdc) (Note 1)

hFE

30
60
100
100
20

300

ON CHARACTERISTICS
DC Current Gain

CollectorEmitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

0.4
0.75

Vdc

BaseEmitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.75

0.95
1.3

Vdc

SMALLSIGNAL CHARACTERISTICS
fT

200

MHz

CollectorBase Capacitance

CurrentGain Bandwidth Product

(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

8.5

pF

EmitterBase Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

30

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

1.5 k

15 k

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

0.1

8.0

X 104

SmallSignal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

60

500

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

1.0

100

mmhos

(VCC = 30 Vdc, VBE = + 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td

15

ns

tr

20

ns

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = 15 mA, IB2 = 15 mA)

ts

225

ns

tf

30

ns

SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

ORDERING INFORMATION
Package

Shipping

TO92

5000 Units / Bulk

TO92
(PbFree)

5000 Units / Bulk

TO92

2000 / Tape & Reel

TO92
(PbFree)

2000 / Tape & Reel

TO92

2000 / Ammo Pack

2N4403RLRMG

TO92
(PbFree)

2000 / Ammo Pack

2N4403RLRPG

TO92
(PbFree)

2000 / Ammo Pack

Device
2N4403
2N4403G
2N4403RLRA
2N4403RLRAG
2N4403RLRM

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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2

2N4403
SWITCHING TIME EQUIVALENT TEST CIRCUIT
30 V

30 V
200 W

< 2 ns
+2 V

+14 V
0

0
1.0 kW
16 V

CS* < 10 pF

10 to 100 ms,
DUTY CYCLE = 2%

200 W

< 20 ns

1.0 kW

16 V

CS* < 10 pF

1.0 to 100 ms,

DUTY CYCLE = 2%

+4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. TurnOn Time

Figure 2. TurnOff Time

TRANSIENT CHARACTERISTICS
25C

100C

30
Ceb

10
7.0
Ccb

5.0

VCC = 30 V
IC/IB = 10

3.0
Q, CHARGE (nC)

CAPACITANCE (pF)

20

10
7.0
5.0

2.0
1.0
0.7
0.5

QT

0.3

QA

0.2
2.0
0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)

20

0.1

30

10

Figure 3. Capacitances

20

30
50 70 100
200
IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

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3

300

500

2N4403
100

100
IC/IB = 10

70

70

tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0

30
20

t r , RISE TIME (ns)

t, TIME (ns)

50

30
20

10

10

7.0

7.0

5.0

VCC = 30 V
IC/IB = 10

50

10

20

30

50

70

100

200

300

5.0

500

10

20

30

50

70

100

200

300

500

500 1k 2k

5k 10k 20k
RS, SOURCE RESISTANCE (OHMS)

50k

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time

Figure 6. Rise Time

200

t s, STORAGE TIME (ns)

IC/IB = 10
100
IC/IB = 20

70
50
IB1 = IB2
ts = ts 1/8 tf
30
20

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz
10

10

f = 1 kHz
8

6
4
2

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

8
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
IC = 100 mA, RS = 1.6 kW

10

20

50

IC = 50 mA
100 mA
500 mA
1.0 mA

RS = OPTIMUM SOURCE RESISTANCE

0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)

100

50

Figure 8. Frequency Effects

100

200

Figure 9. Source Resistance Effects

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4

2N4403
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C

This group of graphs illustrates the relationship between

hfe and other h parameters for this series of transistors. To
obtain these curves, a highgain and a lowgain unit were

selected from the 2N4403 lines, and the same units were
used to develop the correspondinglynumbered curves on
each graph.
100k

700

50k

hie , INPUT IMPEDANCE (OHMS)

1000

hfe , CURRENT GAIN

500
300
200
2N4403 UNIT 1
2N4403 UNIT 2

100
70
50

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

10k
5k
2k
1k
500

100

5.0 7.0 10

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain

Figure 11. Input Impedance

20

5.0 7.0

10

500

10

2N4403 UNIT 1
2N4403 UNIT 2

5.0
2.0
1.0
0.5
0.2
0.1

20k

200

hoe , OUTPUT ADMITTANCE (m mhos)

h re , VOLTAGE FEEDBACK RATIO (X 104 )

30

2N4403 UNIT 1
2N4403 UNIT 2

0.1

0.2

0.3

0.5 0.7 1.0

2.0

3.0

100
50
20
10

2.0
1.0
0.1

5.0 7.0 10

2N4403 UNIT 1
2N4403 UNIT 2

5.0

10
0.2

0.3

0.5 0.7 1.0

2.0

3.0

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio

Figure 13. Output Admittance

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5

5.0 7.0

2N4403
STATIC CHARACTERISTICS

h FE , NORMALIZED CURRENT GAIN

3.0
VCE = 1.0 V
VCE = 10 V

2.0

TJ = 125C
25C

1.0
55C

0.7
0.5
0.3
0.2
0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 14. DC Current Gain

1.0
0.8

0.6

IC = 1.0 mA

10 mA

100 mA

500 mA

0.4

0.2

0
0.005

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)

2.0

3.0

5.0

7.0

10

20

30

50

Figure 15. Collector Saturation Region

0.5

TJ = 25C

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(sat) @ VCE = 10 V

0
COEFFICIENT (mV/ C)

VOLTAGE (VOLTS)

1.0

0.4

0.2

qVC for VCE(sat)

0.5
1.0
1.5
qVS for VBE

2.0
VCE(sat) @ IC/IB = 10

0.1 0.2

0.5

50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)

2.5
0.1 0.2

500

0.5

1.0 2.0

5.0

10

20

50 100 200

IC, COLLECTOR CURRENT (mA)

Figure 16. On Voltages

Figure 17. Temperature Coefficients

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6

500

2N4403
PACKAGE DIMENSIONS

TO92 (TO226)
CASE 2911
ISSUE AM
A

STRAIGHT LEAD
BULK PACK

R
P
L
SEATING
PLANE

X X
G

H
V

C
SECTION XX

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

BENT LEAD
TAPE & REEL
AMMO PACK

P
T
SEATING
PLANE

X X
G

J
V
1

C
SECTION XX
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70

2.04
2.66
1.50
4.00
2.93

3.43

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
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2N4403/D