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VLSI Circuit Design

Lecture 5: Circuit Operation of


CMOS Inverter
Dr. Ke Huang
COMPE 572
VLSI Circuit Design
Fall 2015

9/8/2015

COMPE 270 Digital Systems

Project assignments
You will have 4 project assignments in total
No dedicated lab sessions, i.e., you need to perform
labs and write lab reports on your own time
The lab assignments are performed by groups of 2 or 3
students, find your team members!

Log into Blackboard account for tutorial and


assignment info

9/8/2015

COMPE 270 Digital Systems

What you should do


1. Find your colleagues to form your groups (2 or 3
students per group)
2. Log into your SDSU student account and run the
simulation tools as shown in the tutorials
3. Log into your Blackboard account to read lab tutorials
and assignment info
4. Perform your lab projects, write your report (one
report per group), and return your report by the due
date specified on your blackboard account, section
Important Dates

9/8/2015

COMPE 270 Digital Systems

Review
Power dissipation of logic inverter
Propagation delay of logic inverter
Power-delay and energy-delay products

Digital IC technologies and logic-circuit families

9/8/2015

COMPE 270 Digital Systems

Power dissipation of logic inverter


Inverter implementation
Load capacitance in complemented inverter

Dynamic power dissipation: during switch activities due to capacitance

9/8/2015

COMPE 270 Digital Systems

Power dissipation of logic inverter


Dynamic power dissipation
Equivalent circuits for calculating the dynamic power dissipation
for complemented inverter

goes from high to low

9/8/2015

COMPE 270 Digital Systems

Power dissipation of logic inverter


Dynamic power dissipation
Equivalent circuits for calculating the dynamic power dissipation
for complemented inverter
Instantaneous power
Energy delivered by the power
supply to charge the capacitor

Charge delivered to the capacitor

9/8/2015

COMPE 270 Digital Systems

Power dissipation of logic inverter


Dynamic power dissipation
Equivalent circuits for calculating the dynamic power dissipation
for complemented inverter
Charge in the capacitor after switch
Total energy delivered by the
power supply
Energy stored in the capacitor

Energy dissipated by the resistance

9/8/2015

COMPE 270 Digital Systems

Power dissipation of logic inverter


Dynamic power dissipation
Equivalent circuits for calculating the dynamic power dissipation
for complemented inverter

goes from low to high

1
2

1
2

2
2
Energy stored in the capacitor goes from
to 0,
dissipated

9/8/2015

COMPE 270 Digital Systems

10

Power dissipation of logic inverter


Dynamic power dissipation
Energy dissipated per inversion cycle

Input
Output
2
Energy dissipated in the resistance per cycle is
2
Dynamic power dissipation of the inverter:

Q: How to reduce dynamic power dissipation of inverter

9/8/2015

COMPE 270 Digital Systems

11

Propagation delay of logic inverter


Propagation delay of logic inverter
Propagation delay for input pulse with finite (nonzero) rise and fall
times

9/8/2015

COMPE 270 Digital Systems

12

Power-delay and energy-delay products


Power-delay product (PDP)
Power-delay product (PDP): a figure of merit for comparing logiccircuit technologies
Dynamic power of CMOS
PDP of CMOS
PDP of CMOS at maximum frequency

9/8/2015

COMPE 270 Digital Systems

13

Power-delay and energy-delay products


Energy-delay product (EDP)
Energy-delay product (EDP): another figure of merit for comparing
logic-circuit technologies

9/8/2015

COMPE 270 Digital Systems

14

IC technologies and logic-circuit families


Digital IC technologies and logic-circuit families
Digital IC technologies and logic-circuit families chart

9/8/2015

COMPE 270 Digital Systems

15

Learning objectives
Static circuit operation of CMOS inverter
Voltage-transfer characteristic of CMOS inverter
Unmatched CMOS inverter

9/8/2015

COMPE 270 Digital Systems

16

Circuit operation of CMOS inverter


Circuit operation of CMOS inverter
Circuit-level diagram of CMOS inverter

9/8/2015

COMPE 270 Digital Systems

17

Circuit operation of CMOS inverter


Circuit operation of CMOS inverter
Circuit operation of CMOS inverter: when input is high
= : NMOS in saturation or
triode region
= 0: PMOS in cut-off region, then
=0
= 0: NMOS not connected to ,
NMOS in triode region

9/8/2015

COMPE 270 Digital Systems

18

Circuit operation of CMOS inverter


Circuit operation of CMOS inverter
On resistance of NMOS in triode region: a review
=

1 2
[ ]

[ ]

often neglected

9/8/2015

COMPE 270 Digital Systems

19

Circuit operation of CMOS inverter


Circuit operation of CMOS inverter
Equivalent circuit of CMOS inverter with high input

No current flowing in the circuit:


No static power dissipation

9/8/2015

COMPE 270 Digital Systems

20

Circuit operation of CMOS inverter


Circuit operation of CMOS inverter
Equivalent circuit of CMOS inverter with low input

9/8/2015

COMPE 270 Digital Systems

21

Learning objectives
Static circuit operation of CMOS inverter
Voltage-transfer characteristic of CMOS inverter
Unmatched CMOS inverter

9/8/2015

COMPE 270 Digital Systems

22

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter

When < tn , is off and is in triode


region, no current
When is slightly greater than tn , current is
small small voltage drop on ,
value is large is in saturation region
When continues to increase, current
increases, , decreases and |, |
increases, at some point both and are in
saturation region
Similarly, when continues to increase,
turns to triode, turns to saturation
region
When | | < tp , is in triode region
and is off

9/8/2015

COMPE 270 Digital Systems

23

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Equivalent circuit of CMOS inverter with low input

9/8/2015

COMPE 270 Digital Systems

24

VTC of CMOS inverter


Noise margins: review
Important parameters of the voltage transfer characteristics of
the logic inverter
: Output low level
: Output high level
: Maximum value of input
interpreted by the inverter as a
logic 0
: Minimum value of input
interpreted by the inverter as a
logic 1
: Noise margin for low input
: Noise margin for high input

9/8/2015

COMPE 270 Digital Systems

25

Digital logic inverter


Noise margins: review
Formal definitions of the threshold voltages and

9/8/2015

COMPE 270 Digital Systems

26

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Formal definition of noise margin in CMOS inverter

9/8/2015

27

COMPE 270 Digital Systems

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Formal definition of noise margin in CMOS inverter

1 2

=
2

NMOS in triode region

1

2

PMOS in saturation region

If NMOS and PMOS match


= =

1 2 1
=
2
2

9/8/2015

COMPE 270 Digital Systems

28

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Formal definition of noise margin in CMOS inverter
1 2 1
=
2
2

Differentiating both sides relative to results in


+
=

in which we substitute = and

=
2

= 1, then we obtain

9/8/2015

COMPE 270 Digital Systems

29

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Formal definition of noise margin in CMOS inverter

Substituting = and = in
2
1 2 1
= 2
2
2
we have
1
= (5 2 )
8
Similarly, we can obtain
1
= (3 + 2 )
8

9/8/2015

COMPE 270 Digital Systems

30

VTC of CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Determination of noise margin in CMOS inverter

9/8/2015

COMPE 270 Digital Systems

31

Learning objectives
Static circuit operation of CMOS inverter
Voltage-transfer characteristic of CMOS inverter
Unmatched CMOS inverter

9/8/2015

COMPE 270 Digital Systems

32

Unmatched CMOS inverter


Advantage of having matched inverters

Both low and high inputs can have the same tolerance for noise

9/8/2015

33

COMPE 270 Digital Systems

Unmatched CMOS inverter


Voltage-Transfer Characteristic of CMOS inverter
Formal definition of noise margin in CMOS inverter

1 2

=
2

NMOS in triode region

1

2

PMOS in saturation region

If NMOS and PMOS match


= =

1 2 1
=
2
2

9/8/2015

COMPE 270 Digital Systems

34

Unmatched CMOS inverter


Unmatched CMOS inverter
Penalties for having matched inverters
Width of the p-channel device can be three to four times as
large as that of the n-channel device, since is much
smaller than larger silicon area
Increased device capacitances increase in the propagation
delay

It is useful to design unmatched CMOS inverter

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35

COMPE 270 Digital Systems

Unmatched CMOS inverter


Unmatched CMOS inverter
Design of unmatched CMOS inverter
1
=
2
1
=
2

( )2
( | |)2

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36

COMPE 270 Digital Systems

Unmatched CMOS inverter


Unmatched CMOS inverter
Design of unmatched CMOS inverter
1

)2 =

( | |)2

Substituting = = , we have
+
=
+1
where
=

9/8/2015

37

COMPE 270 Digital Systems

Unmatched CMOS inverter


Unmatched CMOS inverter
Design of unmatched CMOS inverter

+
+1

= , =

If we want to keep the same minimum length =

Both PMOS and NMOS are fabricated on the same substrate same

We can change and to control , thus the value of

9/8/2015

COMPE 270 Digital Systems

38

Unmatched CMOS inverter


Unmatched CMOS inverter
Design of unmatched CMOS inverter

+
=
+1
=

often 3 to 4 times smaller than


What happens if we reduce , say by a factor of 3?

9/8/2015

COMPE 270 Digital Systems

39

Summary
Circuit operation of CMOS inverter
Voltage-transfer characteristic of CMOS inverter
Unmatched CMOS inverter

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