Академический Документы
Профессиональный Документы
Культура Документы
Tutorial -7
huangtongde@ust.hk
Abrupt
Implantation
vs.
Diffusion
Types of junction
Two proles encountered most often in real devices
Easy to analyze from device physics point of view
Abrupt
Graded
PN junction-physics process
As conduction electrons and holes diffuse across the junction,
they leave behind ionized dopants. Thus, a region that is
depleted of mobile carriers is formed.
E-field
Efn
Efp
Built-in potential
PN junction-Built-in potential
N-region n N d N c e
qV 1 kT
kT N c
V1
ln
q
Nd
ni
kT N c N a
qV 2 kT
P-region n
Nce
V2
ln
2
Na
q
ni
kT
bi V 2 V 1
q
bi
Nc Na
Nc
ln
ln
2
Nd
ni
kT N d N a
ln
2
q
ni
(Unit: Volts)
Built-in potential
E ( x)
E ( x + Dx)
Dx
x
Poissons equation
dE qN D
dx si
si
E
(x)
si
x b
qND
a
-b
-qNA
qN D
dE qN A
dx si
si
E
qN A
si
a x
aN A bND
qNa
si
xno
Na Nd
2kT
ln
2
2
q
ni
1
1
Na Nd
ni
10 cm
1/ 2
b) W 2 sbi 2 12 8.85 10 1
dep
1.6 1019 1017
qN d
14
c) xN Wdep 0.12 m
d) xP xN N d N a 1.2 104 m 1.2 0
0.12 m
( Ec E fn ) / kT
Nce
( Ec E fp ) / kT ( E fn E fp ) / kT
nP 0 e
( E fn E fp ) / kT
nP 0e qV / kT
EEcc
EEfnfnfn
fp
EEfp
EEv v
xx
xN0 x0 P
N
a
qV
kT
n p n( x p ) n p n p e 1
np0
x'
edge of depletion region
Equilbrium concentration
of electrons on the P side:
n p0
ni2
NA
x xn
Lp
dp ( x )
e
= qD pp ( xn )
dx
Lp
= qD p
p ( x)
Lp
x x p
dn( x)
e Ln
J n ( x) qDn
= qDnn( x p )
dx
Ln
= qDn
Dn n p D p pn qVa
Dn
Dp
2
kT
I AJ = qA
e 1 = qAni
L p
n
N a Ln N d L p
n( x)
Ln
qVa
e kT 1
Questions
As the mid-term approaches, I received lots of
emails asking question in notes and HW
In order to give you more detailed explanation,
please bring your questions and discuss with
me after tutorial