14 Leechengxu2012 PDF

UNIVERSITI TEKNOLOGI MALAYSIA
DECLARATION OF THESIS / UNDERGRADUATE PROJECT PAPER AND COPYRIGHT

Authors full name :
LEE CHENGXU
Date of birth
16 MARCH 1988
Title
DESIGN OF PLASMA NEEDLE AND HIGH FREQUENCY

POWER SUPPLY FOR BIO-MEDICAL APPLICATIONS
Academic Session :
2011/2012
I declare that this thesis is classified as :
CONFIDENTIAL
(Contains confidential information under the

Official Secret Act 1972)*
RESTRICTED
(Contains restricted information as specified by

the organization where research was done)*
OPEN ACCESS
I agree that my thesis to be published as online

open access (full text)
I acknowledged that Universiti Teknologi Malaysia reserves the right as follows :

1.
2.
3.
The thesis is the property of Universiti Teknologi Malaysia.

The Library of Universiti Teknologi Malaysia has the right to make copies for
the purpose of research only.
The Library has the right to make copies of the thesis for academic
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Certified by:
SIGNATURE
SIGNATURE OF SUPERVISOR
880316-02-5377
(NEW IC NO. /PASSPORT NO.)
ASSOC. PROF. DR. ZOLKAFLE BUNTAT

NAME OF SUPERVISOR
Date :
NOTES :
27th JUNE 2012
Date :
27th JUNE 2012
If the thesis is CONFIDENTAL or RESTRICTED, please attach with the

letter from the organization with period and reasons for confidentiality
or restriction.
I hereby declared that I have read this thesis and in my

opinion this thesis is sufficient in terms of scope and quality for the
award of Bachelor of Engineering (Electrical).
Signature
Name of Supervisor : ASSOC. PROF. DR. ZOLKAFLE BUNTAT

Date
: 27th JUNE 2012
DESIGN OF PLASMA NEEDLE AND HIGH FREQUENCY POWER

SUPPLY FOR BIO-MEDICAL APPLICATIONS
LEE CHENGXU
This report is submitted in partial fulfillment of the

requirements for the award of the degree of
Bachelor of Engineering (Electrical)
Faculty of Electrical Engineering

Universiti Teknologi Malaysia
JUNE 2012
ii
I declare that this thesis entitled Design of Plasma Needle and High Frequency
Power Supply for Bio-Medical Applications is the result of my own research except
as cited in the references. The thesis has not been accepted for any degree and is not
concurrently submitted in candidature of any other degree.
Signature
Name
: LEE CHENGXU
Date
: 27th JUNE 2012
iii
Dedicated to my beloved father and mother, siblings, friends and lecturers for their
endless loves, encouragement and support
iv
ACKNOWLEDGEMENT
First of all, I would like to express my heartiest gratitude to my supervisor,

Assoc. Prof. Dr. Zolkafle Buntat for his professional guidance, comments and
endless inspirations in the preparation of this research from scratch to successfully
accomplish. I appreciated that I can still seek for his help, advices and suggestions
while in the middle of his busyness. Besides, I would like to thank Dr. Muhammad
Abu Bakar Sidik for his guidance and help as well.
My deepest appreciation goes to my family, friends, fellow course mates and

laboratory technicians for their endless love, endurance and support during the entire
research process. Last but not least, I would like to thank those who directly and
indirectly contribute in making this research a success.
ABSTRACT
Non-thermal plasma treatment of living tissues has become a popular topic in

medical sciences after it was discovered to have the bacteria inactivation function in
year 2002. It is generated under atmospheric pressure and room temperature by
radio-frequent excitation. At the moment, commercialized research function
generator and amplifier are used to generate the non-thermal plasma. Hence, the cost
for current high frequency power supply is very expensive and unfeasible to be used
widely in bio-medical applications. Hence, a cheaper high frequency power supply
should be developed for future applications. Besides, the generated plasma at the tip
of the current plasma needle also very small. It needs a longer treatment time if it is
being applied on a larger wound. In this work, a high frequency power supply for
non-thermal plasma source was designed and developed by using modified class-E
power amplifier circuit. MAX038 was used as signal generator to generate the high
frequency signal. MOSFET Driver DEIC515 and MOSFET DE275X2-102N06A
were used for ultra-fast switching before attached to the amplifier circuit. Based on
the simulation, the designed high frequency power supply has the capability of
generating 505Vpp at frequency of 13.56MHz and this output is high enough to
generate the non-thermal plasma. A novel design of plasma needle with a ring
magnet at the head of the needle was designed with the aims to improve the plasma
uniformity as well as increasing the healing effects on the treated area. Besides high
frequency power supply, this report will present the enhancement design of plasma
needle as well. Some recommendations for future research also being included in the
final part of the report.
vi
ABSTRAK
Baru-baru ini, rawatan plasma sejuk pada tisu hidup telah menjadi satu topic
yang popular dalam bidang sains perubatan selepas ia ditemui mempunyai fungsi
penghapusan bakteria pada tahun 2002. Ia dihasilkan di bawah tekanan atmosfera
dan suhu bilik oleh getaran frekuensi radio. Pada masa ini, penjana dan penguat yang
dikomersialkan untuk tujuan penyelidikan telah digunakan untuk menjana plasma
sejuk. Oleh itu, penjana kuasa berfrekuensi tinggi yang lebih murah perlu direkacipta
untuk aplikasi pada masa depan.Selain itu, saiz plasma yang dijana pada hujung
jarum plasma juga sangat kecil. Ia memerlukan masa rawatan yang lebih panjang jika
digunakan pada luka yang saiznya lebih besar. Dalam karya ini, penjana kuasa yang
berfrekuensi tinggi telah direka dan dibangunkan dengan menggunakan litar penguat
kuasa kelas E yang telah diubahsuai. MAX038 telah digunakan sebagai penjana
isyarat untuk menjana isyarat berfrekuensi tinggi. Pemandu MOSFET DEIC515 dan
MOSFET DE275X2,-102N06A telah digunakan untuk tujuan pensuisan ultra-cepat
sebelum dipasang pada litar penguat. Berdasarkan simulasi yang telah dibuat, rekaan
penjana kuasa frekuensi tinggi ini mampu menjana 505Vpp pada frekuensi
13.56MHz dan keluaran ini adalah cukup tinggi untuk menjana plasma sejuk. Reka
bentuk baru jarum plasma dengan magnet cincin di kepala jarum telah direka
bertujuan untuk meningkatkan keseragaman plasma serta meningkatkan kesan
penyembuhan pada kawasan yang dirawat. Selain penjana kuasa frekuensi tinggi,
laporan ini juga akan membentangkan jarum plasma yang direka. Beberapa cadangan
untuk kajian pada masa hadapan juga dimasukkan dalam bahagian akhir laporan ini.
vii
TABLE OF CONTENTS
CHAPTER
TITLE
PAGE
DECLARATION
ii
DEDICATION
iii
ACKNOWLEDGEMENTS
iv
ABSTRACT
ABSTRAK
vi
TABLE OF CONTENTS
vii
LIST OF FIGURES
LIST OF SYMBOLS
xii
LIST OF ABBREVIATIONS
xiii
LIST OF APPENDICES
xiv
INTRODUCTION
1.1 Introduction
1.2 Background
1.3 Problem Statement
1.4 Objectives
1.5 Scope of the Project
1.6 Significance of the Study
LITERATURE REVIEW
2.1 Introduction
2.2 Plasma Generation
2.3 Plasma Needle
viii
2.4 Design of Plasma Needle
10
2.5 Class E Amplifier as RF Plasma Source
11
2.6 45MHz MOSFET Driver
14
2.7 MOSFET
17
2.7.1 MOSFET Turn-on Phenomena
18
2.7.2 MOSFET Turn-off Phenomena
21
2.8 Magnetic Effects on Living Organism
22
2.9 Application of Plasma Needle
23
2.9.1 Dental Applications
23
2.9.2 Plasma Treatment on Mammalian Vascular

Cells
2.9.3 Cancer Treatment
24
24
RESEARCH METHODOLOGY
3.1 Introduction
25
3.2 Methodology Procedure
26
3.3 Related Guidelines and Datasheets
27
3.4 Software Used for Modelling
27
3.4.1 SolidWorks 2011
27
3.4.2 Multisim 10.0
29
PLASMA NEEDLE DESIGN

4.1 Introduction
30
4.2 Modelling Components
30
4.3 Modelling Dimensions
31
4.4 Modelling Descriptions
32
HIGH FREQUENCY POWER SUPPLY

5.1 Introduction
35
5.2 Simulation Development
35
ix
5.2.1 Simulation of Modified Class E Amplifier

5.3 Hardware Development
36
37
5.3.1 MAX038 Frequency Waveform Generator
38
5.3.2 DEIC515 MOSFET Driver Circuit
39
5.3.3 DEIC515 and DE275X2-102N06A MOSFET

Circuit
40
RESULTS AND DISCUSSIONS

6.1 Introduction
42
6.2 Simulation Results for Modified Class E Amplifier
42
6.3 Hardware Results
44
6.3.1 MAX038 Frequency Waveform Generator
44
6.3.2 DEIC515 MOSFET Driver
45
6.3.3 DEIC515 and DE275X2-102N06A MOSFET
47
CONCLUSION AND RECOMMENDATION

7.1 Introduction
49
7.2 Conclusion
49
7.3 Recommendation
50
REFERENCES
52
APPENDICES
APPENDIX A
55
APPENDIX B
57
LIST OF FIGURES
FIGURE NO.
TITLE
PAGE
1.1
Thermal Plasma
2.1
General Schematic of RF Capacitively Coupled
Plasma
2.2
Schematic of Plasma Needle Setup
2.3
Stability Curves of The Plasma
2.4
Plasma Needle
10
2.5
Class E Amplifier Circuit Diagram
12
2.6
Experimental waveform
14
2.7
Symbol and equivalent circuit of a MOSFET
17
2.8
Transfer characteristics of a power MOSFET
18
2.9
A MOSFET being turned on by a driver in a clamped

inductive load
2.10
19
A MOSFET being turned off by a driver in a clamped

inductive load
19
2.11
MOSFET turn on sequence
20
2.12
MOSFET turn off sequence
22
4.1
Components of Plasma Needle
31
4.2
Dimensions of Plasma Needle
31
4.3
Plasma Needle Model
33
4.4
The Pyrex tube moved 5mm into the plastic holder
34
4.5
Plasma Needle after Rendered
35
5.1
Modified Class E Amplifier Simulation Circuit
36
5.2
MAX038 Frequency Waveform Generator Circuit
38
5.3
MAX038 Hardware Circuit
39
xi
5.4
DEIC515 MOSFET Driver Circuit
39
5.5
DEIC515 Hardware Circuit
40
5.6
DEIC515 and MOSFET Hardware Circuit
41
6.1
Simulated waveform of VCT and VCR
43
6.2
Simulated waveform of Vin and Vo
43
6.3
Output of MAX038
44
6.4
Output of DEIC515
46
6.5
Output of DE275X2-102N06A
48
xii
LIST OF SYMBOLS
Kelvin
Degree Celcius
UV
Ultraviolet
Min
Minute
ns
Nanoseconds
IG
Gate Current
ID
Drain Current
IS
Source Current
Volts
kV
Kilo Volts
Kilo Ohms
mm
Milimeter
cm
Centimetre
mV
Mili Volts
mW
Mili Watts
GHz
Giga Hertz
MHz
Mega Hertz
Vpp
Peak-to-peak Voltage
Vp
Peak Voltage
He
Helium
uH
Micro Henries
mH
Mili Henries
ZL
Load Impedance
VGS(th)
Threshold Voltage
VCC
Power Supply Voltage
xiii
LIST OF ABBREVIATIONS
RF
Radio Frequency
Frequency
BNC
Bayonet NeillConcelman
DC
Direct Current
AC
Alternating Current
UTM
Universiti Teknologi Malaysia
CCP
Capacitvely Coupled Plasma
NI
National Instrument
OD
Outer Diameter
ID
Internal Diameter
IGBT
Insulated Gate Bipolar Transistor
MOSFET
Metaloxidesemiconductor Field-effect Transistor
IC
Integrated Circuit
PCB
Printed Circuit Board
xiv
LIST OF APPENDICES
APPENDIX
TITLE
PAGE
Apparatus for Hardware Experiment
55
Datasheet
57
CHAPTER 1
INTRODUCTION
1.1
Introduction
The conducted research was Design of Plasma Needle and High Frequency
Power Supply for Bio-Medical Applications. The reason this topic was chosen is
because non-thermal plasma treatment has become more and more popular in
modern plasma physics and in medical sciences. Besides, non-thermal plasma has
made an innovative form in solid state processing technology. In this chapter, there
are a few things that will be covered, namely background of the study, problem
statement, objective of the study, scope of the study and significance of the study.
1.2
Background of the Study
On earth, solid, liquid and gas are three states of matter that can be easily
found. Human are very familiar with these three states of matter as they are facing
them everyday. In 1879, an English physicist, Sir William Crookes had identified a
fourth state of matter where we call it as plasma now. The name plasma was first
being applied by Dr. Irving Langmuir, an American chemist and physicist, in 1929.
Plasma comprises of free charge carriers (electrons and ions), active radicals
and excited molecules and atoms which is similar to gas. High energy such as
thermal, electrical, or light is needed to ionize its atom or molecules and this process
will cause the gas to become electrically conductive. This electrically conductive,
ionized gas is called plasma. The temperature for plasma electrons normally above
104 K while the temperature for neutrals and ions depend on type of plasma and have
the range from room temperature to 107 K.
Plasma can be classified as thermal and non-thermal based on their

relative temperatures of the electrons, molecules, ions and atoms. For thermal plasma,
its electrons temperature and gas temperature are in thermodynamic equilibrium. In
other word, the temperature of molecules, ions and atoms are same with the electrons
temperature. Few examples of thermal plasmas are shown in Figure 1.1.
(a)
(b)
Figure 1.1: Thermal Plasma (a) Lighning Strike and (b) Metal Spraying
For non thermal plasma, the electron temperature and gas temperature are not
in equilibrium with each other. The temperature of molecules, ions and atoms are
much lower (normally room temperature) than electrons (higher temperature). The
relative low temperature of non-thermal plasma make it does not impose thermal
damage to nearby object. The thermal damage caused by the high temperature of
thermal plasma has been eliminated or minimised. Since the thermal damage had
been eliminated, it can be applied in many applications.
The current trend is more focus on using non-thermal plasma in bio-medical

applications, usage on living tissues and even usage on human body. Non-thermal
plasma has the capability of bacterial inactivation [1], non-inflammatory tissue
modification [2] and healing effects on a living organism [3][4]. These capabilities
led to the development of the plasma needle and many researchers glow their interest
at the interaction between non-thermal plasmas and biological tissues.
1.3
Problem Statement
The plasma system that researchers are using now is very expensive. This is
because commercialize function generator and research amplifier are used in plasma
radio-frequency (RF) power supply. This equipment is not specifically use for
generating non-thermal plasma but normally used in laboratory with the purpose of
studying and researching. Due to the high cost of the plasma system, alternative for
cheaper RF power supply is needed so that the cost for plasma system can be
lowered down. This is vital for future applications of non-thermal plasma.
One of the applications for non-thermal plasma is plasma needle which

introduced by Eva Stoffels in 2002 [5]. The generated plasma is non-thermal plasma
where the temperature of the molecules, ions and atoms is about room temperature
and operates at atmospheric pressure. These characteristics open the opportunity of

using plasma needle in biomedical fields and even on human body. However, plasma
that is generated by plasma needle setup is very small (about one milimeter in
diameter). Due to this reason, the treatment time will be prolonged when the
treatment area is enormous.
It is proven that non-thermal plasma has the healing effects on a living

organism [3]. Medical research states that placing the N-pole side (the magnetic
negative energy of the two poles) of a magnet facing any living tissue may attract the
positive electrolytes in that living organism. By placing the N-pole side of a magnet
on the skin, this process is accelerated, and endorses natural healing. The
introduction of the ring magnet with north pole facing the treated surface, at the head
of the plasma needle is expected to improve the plasma uniformity as well as
functioning as healing effect.
1.4
Objective of the Study
The aim of this project is to study, research and redevelop the high frequency
power supply and design a new plasma needle by adding a ring magnet to the plasma
needle to improve the plasma uniformity. This aim will be met through two
objectives:
i.
To redevelop a high frequency power supply for plasma needle;
ii.
To enhance the design of plasma needle by ring magnet addition.
1.5
Scope of the Study
The scope of this project is:
i.
Develop the high frequency power supply for plasma needle;
ii.
Simulation study and modelling on high frequency power supply circuit;
iii.
Analysis on the power supply output;
iv.
Enhance the design of plasma needle by ring magnet addition.
1.6
Significance of the Study
Although there are various experiments being carried out on the plasma
needle, they did not discuss on the ways of improving the plasma uniformity and
treatment area. This study is to enhance the design of plasma needle by adding a ring
magnet with the purpose of improving the plasma uniformity as well as the healing
effects on the treated are. By improving the plasma uniformity and treatment area,
the treatment time can be shortening and more patients can be benefitted every day.
The findings of this study were important as it opens the ways of improving plasma
uniformity for future research.
CHAPTER 2
LITERATURE REVIEW
2.1
Introduction
In this chapter, literature review starts with screening the non-thermal plasma
generation, design and applications of plasma needle, which is the big picture of the
research. This research is part of the effort to generate non-thermal plasma for the
usage of plasma needle.
2.2
Plasma Generation
Plasma can be generated from various ways. The most common method in
plasma generation is the electrical breakdown of an electric field in a neutral gas. In
the electric field, the speeded charge carriers will transfer their energy into the
plasma by smashing other atoms and molecules. The electrons will preserve their
major energy in elastic collisions with other particles due to their light weight and
they will only transfer their energy mainly in inelastic collisions. The plasma
generated by the electric fields can be classified into four which are direct current (dc)
discharges, pulsed dc discharges, radio-frequency discharges and microwave

discharges [6].
The RF discharges can be divided into inductively coupled discharge and

capacitively coupled discharge. Plasma needle is using the capacitively coupled
discharge method to generate plasma in its application. Figure 2.1 shows the general
schematic of an RF capacitively coupled discharge.
Figure 2.1: General Schematic of RF Capacitively Coupled Plasma [7]
2.3
Plasma Needle
In year 2002, Physicist Eva Stoffels and her team had come out with an
innovative idea which is the plasma needle. Plasma needle is a novel design of nonthermal plasma source which being generated at atmospheric pressure by using the
concept of radio-frequency discharges. It has a single-electrode configuration and
operated with the presence of helium gas [5]. The plasma generated in plasma needle
operates near room temperature and at atmospheric pressure, do not cause pain and
bulk destruction of the tissue yet allows treatment of uneven surface and has a small
penetration depth. These features allow plasma needle to be applied in bio-medical
applications.
RF plasma at 13.56MHz is generated by using a waveform generator. The

output from waveform generator is amplified by an RF amplifier. The signal is then
directed to a matching network. The power is monitored by using a power meter and
Dual Directional Coupler while the voltage is measured via Tektronics probe. The
electrical measurements show that plasma needle operates at quite low voltages from
200-500 Vpp and the power dissipation range from 10 mW to at most a few watts.
Figure 2.2: Schematic of Plasma Needle Setup [7]
This plasma source will generate the plasma which contains free electrons
and ions, various chemical reactive species and energetic UV photons [8]. UV
emission and density of chemical reactive species are significant in defining the
performance of plasma in the treatment of biological materials. The spore
inactivation with an atmospheric pressure discharge can be mainly due to UV
radiation. With the absence of UV emission, action of chemical reactive species such
as O-, OH-, N2+, N2 and He can cause spore inactivation as well. Hence, the spore
inactivation depending on the operating conditions, it can be achieved either under
dominant UV radiation or under purely action of the reactive species [9].
The plasma generation with the presence of helium gas are most stable and
have the widest range of operating conditions. The operating conditions of the
plasma needle as a function of helium flow rate and percentage of air admixture at a
constant total flow rate are shown in Figure 2.3. This is mainly essential for saving
budgets and convenience of operation in small model openings. Since with the
presence of helium gas, the plasma has very low power dissipation and the sustaining
voltage is tolerable, it is preferable to be used in biomedical applications.
Figure 2.3 Stability Curves of The Plasma: (a) as a function of helium flow rate and
(b) as a function of percentage of air admixture at a constant total flow rate (350 ml
min-1). Displayed are the breakdown voltages, needed to ignite the plasma (),
minimum operating voltages, just above extinction threshold () and maximum
voltages, just below arcing () [5].
10
2.4
Design of Plasma Needle
Plasma needle has relatively simple design. The tungsten needle of 0.3mm is
inserted coaxially in a Perspex tube which has an inner diameter of 4mm [10]. The
tungsten needle serves as the powered electrode here. The Perspex tube is put into
the stainless steel holder and it is protrudes from the stainless steel holder. The length
of the needle normally is around 6-8cm. The electrode is insulated by the Perspex
tube to prevent a discharge along the needle.
The breakdown voltage to generate plasma can easier be achieved with the
presence of gas helium at minimum peak-to-peak RF voltage of around 200V. The
RF signal voltage is connected to plasma needle through a coaxial cable. There is a
gas inlet in the stainless steel holder for gas helium to flow in. Helium is regulated by
a mass flow controller to flow at a rate of 21/min into the Perspex tube [10]. It will
mix with a small amount of air at the tip of the needle. The helium-air mixture is
significant to create active radical species for sterilization [4].
Figure 2.4: Plasma Needle
11
The needle should keep as short as possible. This is because the changes in
the power supplied to plasma needle will cause the changes in matching network.
The heating of the needle is thought to be the main reason of the changes. It is better
for coaxial cable that connecting the power supply to the plasma needle to cover
most of the distance rather than lengthen the needle itself. Even though the plasma
kills most of the bacteria, the plasma needle should be sterilized after the treatment
[18]. This is the precaution step taken to avoid any bacteria remain at the needle after
the treatment.
There is heat at the tip of the needle when plasma is formed. The damage will
be done when there is direct contact between the tip of the needle and the skin.
Besides, the tip is very sharp as well. Hence, contact with the skin should be avoided
[18]. The housing covers should cover the needle in total so that the metal tip will
never touch the skin. If there is accident contact made during the treatment, the cover
will touch the skin instead of the warm metal tip.
2.5
Class E Amplifier as RF Plasma Source
Class E amplifier is the improvements and adaptations from typical topology

with the purpose of generating high frequency ac signal. It has higher efficiency
which is around 85% compared to 70% of conventional class B or class C amplifier.
Naturally, class E amplifier has smaller power losses by a factor of 2.3 as compared
to conventional class B and class C amplifier with same transistor at same frequency
and output power [13].
12
Figure 2.5: Class E Amplifier Circuit Diagram
The way of generating excitation voltage was based on the modified class E
amplifier where it is different with the original topology. This configuration uses a
metal oxide/semiconductor field-effect transistor (MOSFET), which perform on-off
operation by driving a parallel resonant circuit. The output signal from square wave
generator (CGS3311) will be supplied to a driver, which provides the on and off
pulses for the MOSFET [15]. The MOSFET output pulses will then be converted
into a sinusoidal high voltage signal by parallel RLC resonant (class E amplifier)
circuit.
In this class E amplifier circuit, the resistive component R or load charge Z is

connected in parallel to the resonant capacitor C. The main modification of this
amplifier compare to the classical amplifier is the resonant capacitor. In this
amplifier, the resonant capacitor works like an ac voltage supply with respect to the
load charge [14]. Consequently, the circuit amplifies the voltage signals that will be
applied to the load.
The amplifier discontinuous conduction mode is determined by the two

possible power switch operating modes. During the ON state (S = ON), the resonant
circuit is only governed by LR and CR, with CT playing the role of a voltage supply.
Thus, the frequency response is
(2.1)
13
During the OFF state (S = OFF), the resonant circuit is governed by LR, CR
and CT. The current signal I will supply the resonant circuit and the frequency
response is
(2.2)
The transistor acts as a switch with a duty ratio D and a work frequency f is
limited by (f1 < f < f2). The S can be expressed by
S=
for
0 < wt 2
for 2 < wt 2
ON wt,
OFF wt,
(2.3)
The circuit will show two distinct frequencies according to the state of S. The
capacitive parameter for MOSFET will be fixed according to MOSFET manufacture.
Hence, CT has a fix value which can be found from the datasheet. Thus, the resonant
network parameter LR and CR can be obtained by
(2.4)
(2.5)
14
(a)
(b)
Figure 2.6: Experimental waveform of (a) VCR(t), VCT(t), and (b) iLR(t) and IRS(t) [15]
2.6
45MHz MOSFET Driver
Out of many ways of driving MOSFET, IC Drivers offer convenience and

features that attracting many designers. The main advantage of IC Driver is
compactness where it has much smaller sized circuits. Besides, IC Drivers
15
intrinsically offer shortest propagation delay hence signals have smaller traverse
distance. It also has shorter rise and fall times. Since all important parameters are
specified in an IC Driver, designers manage to save their time and capital as they
need not go through process of defining, designing and testing circuits to drive the
MOSFET [19].
A proper planning and execution is needed in MOSFETS operation of Class

D or E amplifier and applications that require ultra-fast rise and fall times. The four
important elements are circuit loop inductance, power supply bypassing, circuit
layout, adequate grounding and shielding [19]. The inductive term will be created in
the loop of current path from power supply positive to ground. This loop must be
kept as short as possible by using few tiny capacitors and solder them neatly on the
Vcc and ground pins of Driver IC. Driver IC's bypass capacitor value can be
calculated by:
(2.6)
Where,
= quiescent current drawn from Vcc

d = Duty cycle of the PWM waveform
Qg = Total gate charge of the MOSFET
Fsw = Switching frequency
Vripple = Tolerable ripple level on the Vcc
Driver circuit also needs a proper grounding. Loops should be avoided in

driver circuit. Drivers need a very low impedance path for current return to ground.
The three paths of returning current to ground are: 1. between driver IC and the logic
driving it; 2. between the driver IC and its own power supply; 3. between the driver
IC and the source emitter of MOSFET being driven [19]. All these paths should be
kept short in length to reduce inductance and be as wide as possible to reduce
16
resistance. A copper plane in a multi-layered PCB can be used to provide a ground

surface under the gate drive circuit. This ground plane should be connected to the
power ground plane of MOSFET source or emitter terminal to avoid different ground
potentials.
With desired rise and fall times in the range of 2 to 3 ns, lengths of current
carrying conductors should be kept as short as possible. Conductor traces partial
inductance can be calculated by:
(2.7)
Where, = inductance in nanohenries

h = height of conductor trace above ground plane
w = width of the conductor trace
It would be better to keep Vcc of Driver to about 20 VDC. If the trace length
from output pin of Driver IC to the gate of MOSFET cannot keep at minimum
distance, the width of the tract should be increased to minimize the loop inductance.
For every tiny increase in conductor length between output pin of Driver IC to the
Gate lead of MOSFET, there will be a major increase in rise time. Besides, it will
cause transmission line effect and resultant RFI/EMI [19]. This inductance could also
resonate with parasitic capacitances of MOSFET, making it hard to acquire clean
current waveforms at rise and fall. Every MOSFET also has some inductance and the
lower this value; the better is the switching performance.
17
2.7
MOSFET
MOSFET had been used in most applications of Modern Power Electronics.

In future, we will see more and more applications making use of MOSFET.
MOSFETs can be switched at much higher frequencies with the absence of minority
carrier transport. The limit is imposed by two factors: transit time of electrons across
the drift region and the time required to charge and discharge the input Gate and
Miller capacitances [20].
Figure 2.7: Symbol and equivalent circuit of a MOSFET
N-Channel MOSFET symbol and an equivalent circuit of MOSFET model

with three inter-junction parasitic capacitances, namely: CGS, CGD and CDS is shown
in Figure 2.7. CGD is referred to the Miller capacitance and it contributes most to
the switching speed limitation of the MOSFET [20]. Before drain current ID can
begin to flow, CGS needs to be charged to a critical threshold voltage level VGS(th).
Figure 2.8 shows the curve of ID versus VGS for a power MOSFET. It has a slope
which equal to the transconductance, gm. For power MOSFETs, it is
appropriate to consider the relationship to be linear for values of VGS above VGS(th).
The relationship between VGS and ID is parabolic in nature:
[
(2.8)
18
Figure 2.8: Transfer characteristics of a power MOSFET
2.7.1
MOSFET Turn-on Phenomena
A MOSFET being turned on by a driver in a clamped inductive load is shown

in Figure 2.9. To initiate the conduction from Drain to Source, C GS of MOSFET
needs to be charged to a critical voltage level VGS(th). A current source with a diode D
connected antiparallel across the inductor represent the clamped inductive load [20].
RGint is the MOSFET intrinsic internal Gate resistance. The inter-junction parametric
capacitances (CGS, CGD and CDS) are connected at their own way. VDD is the dc
voltage supply connected to the Drain of the MOSFET through the clamped
inductive load. Rdr is the output source impedance of the Driver. Vcc with the value
of Vp will supply the Driver and its ground is connected to the common ground of
VDD and then returned to the Source of the MOSFET. There will be an amplified
pulse with the amplitude of Vp at the output terminal of the Driver when a positive
going pulse entering the input terminal of the Driver. The output from Driver is fed
to the Gate of the MOSFET through RGext. RGext is the resistance in series with the
Gate of a MOSFET to control the switching speed of the MOSFET [20].
19
Figure 2.9: A MOSFET being turned on by a driver in a clamped inductive load
Figure 2.10: A MOSFET being turned off by a driver in a clamped inductive load
20
Figure 2.11: MOSFET turn on sequence
MOSFET turn on sequence with variation of different parameters versus time

is shown in Figure 2.11. From t0 to t1, (CGS+CGDl) is exponentially charged until VGS
reaches
VGS(th) with
a time constant T1. In this time period, Drain voltage remains at
VDD and Drain current, ID has not commenced yet. Between 0 to t1, as VGS rises, IGS
falls exponentially, because it is an RC Circuit. After time t1, as the V GS rises above
VGS(th), MOSFET enters its linear region. At time t1, ID initiates, but the VDS is still
maintain at VDD. However, after t1, ID builds up rapidly. Between t1 to t2, the ID
increases linearly with respect to VGS. At time t2, VGS enters the Miller Plateau level
and VD begins to fall quickly [20].
21
From t2 to t4, VGS and IGS remain at the same value. This is called the Miller
Plateau Region. In this time period, most of the drive current from the driver is used
to discharge the CGD and enhance rapid fall of VDS. The ID will only be restricted by
the external impedance in series with VDD. After t4, VGS begins to exponentially rise
again with a time constant T2. During this time interval the MOSFET gets fully
enhanced and the final value of the VGS will determine the effective RDS(on). When
VGS reaches its final value, VDS attains its lowest value, determined by VDS= IDS x
RDS(on) [20].
2.7.2
MOSFET Turn-off Phenomena
Figure 2.10 shows a MOSFET being turned off by a driver in a clamped

inductive load. The turn-off phenomenon is shown in Figure 2.12. There are two
different decay rates when the output from the Driver drops to zero for turning off
MOSFET. From time 0 to t1, VGS initially decays exponentially at the rate of time
constant T2 but it decays exponentially at the rate of time constant T1 when beyond
T4. The first delay here is required to discharge the C ISS capacitance from its initial
value to the Miller Plateau level [20]. From t0 to t1, the gate current is flowing
through CGS and CGD capacitances of MOSFET. During this time interval, ID remains
constant but VDS begins to rise. From t1 to t2, VDS rises from VDS(on) towards its final
off state value of VDS(off) .
From t3 to t4, the VGS begins to fall further below VGS(th). CGS will be
discharge through any external impedance between Gate and Source terminals. The
MOSFET is in its linear region and ID drops rapidly towards zero value. At the
beginning of this interval, the VDS was at its off state value VDS(off) and the MOSFET
will completely turned off at t4 [20].
22
Figure 2.12: MOSFET turn off sequence
2.8
Magnetic Effects on Living Organism
It is proven that magnetic fields do affect the human body in different ways,
and these may be best to be used in therapy [14]. When injury occur, that particular
area is magnetically positive (south pole) and it will become magnetically negative
after few hours (healing occur). North pole magnets have the ability to end the
23
enlargement of growth and contamination while south pole magnets able to arouse
growth of tissue and living systems (bacteria). Hundreds of experiments show that
north pole, the magnetic negative energy has decelerated, controlled and stopped
further development of active cancer site [15]. Due to its characteristic, north pole is
preferred as it has healing effects, relieves pains, reduce inflammations as well as the
infections.
2.9
Applications of Plasma Needle
2.9.1
Dental Applications
Major problem in dentistry are dental cavities. At the moment, laser

technique or traditional method, mechanical drilling can be used to clean the cavities
in teeth. The cleaning process is purely depends on the skill of the dentist. During the
cleaning process, patient might be suffering as both methods involve heating or
vibrations. Heating and vibrations can aggravate the nerve and it can be very painful
to the patient.
Plasma can prevent patient from suffering as it can sterilize the dental cavities
without going through drilling and heating process. This is because the active plasma
species it produces can easily access small irregular cavity and gap. The excess
active species will recombine among themselves or reacting with ambient air and
water molecules once the treatment is completed. Besides, plasma does not cause
major heating to dental pulp yet able to kill the bacteria [10]. Furthermore, cost of
plasma is relatively inexpensive.
24
2.9.2
Plasma Treatment of Mammalian Vascular Cells
Plasma treatment also offers possibility in aiding wound healing. Experiment

between plasma needle and cultured cells were carried out to test for the effects of
electrical properties on cell detachment and necrosis. Mammalian cells that placed
under plasma have the 10s of treatment time for detachment. For short exposure
under plasma yet has the good effect, the layer needed to be thin which is less than
1mm [11]. This has opened the space for cold plasma to be used in healing the
wound.
2.9.3
Cancer Treatment
Nowadays, the only treatment for cancer is either chemotherapy or surgery.

Chemotherapy works against cancer by damaging the nucleus of the cells in the body
that are undergoing the process of division. The cancer-fighting drugs are injected
directly into the body and it will travel around the body to damage and kill the cancer
cells where it has spread. However, it has the side effect of stopping the hair follicles
and skin from dividing.
Plasma treatment can prevent patients from suffering as it does not have the
side effects. Plasma treatment has high-precision on the cells as there will be sharp
boundary line between non-plasma treated region and plasma-treated regions [12].
The high-precision of plasma treatment allows it to be applied directly to the cancer
cells without damaging the surrounding normal cells especially in biomedical
application.
25
CHAPTER 3
RESEARCH METHODOLOGY
3.1
Introduction
This chapter will discuss the methodology used to complete the design of
plasma needle and high frequency power supply for bio-medical applications. Sub
title included in this chapter is methodology procedure, related guidelines and
datasheet, and software used for modelling. Methodology procedure will list out all
necessary steps to finish the design in a simple flow chart. Guidelines and datasheets
that related to the design will be study as well. Software used in this study are
SolidWorks 2011 and Multisim 10.0.
In this study, a novel design of plasma needle will be designed by using

SolidWorks 2011. A ring magnet will be added to the head of the plasma needle and
it is expected to increase the plasma uniformity as well as the healing effect on the
treated area. Multisim 10.0 will be used for power supply circuit simulation. The
circuit will be simulated in Multisim 10.0 before proceed to hardware development
in breadboard and followed by printed circuit board.
26
3.2
Methodology Procedure
The methodology of the design of plasma needle and high frequency power
supply is as summarized in the flow chart below:
Literature Review
Designing and simulation of

Class E amplifier
Designing a plasma needle with

a ring magnet
Hardware development of
plasma needle
Campare the hardware result with the

simulation result
Draw conclusion and

report preparation
27
3.3
Related Guidelines and Datasheets
In order to design the plasma needle and high frequency power supply, the
related journal papers were read and used as references and guidelines. The
specifications of designed plasma needle will be based on the current plasma needle
designed by Eva Stoffels and her team. Same thing goes to the high frequency power
supply as well. The power supply circuit will be modified base on the current circuit.
Besides, related datasheets will be read so that the best components will be chosen in
the circuit. It is very important to choose the correct values and ratings for the
components used in the designed circuit.
3.4
Software Used for Modelling
In this study, SolidWorks 2011 will be used to design the plasma needle
while Multisim 10.0 will be used for class E power amplifier circuit simulation.
3.4.1
SolidWorks 2011
SolidWorks 2011 was chosen as the software to design the plasma needle. It
is a 3D software tools which is more user friendly and easier to learn. It has variety
of user interface tools and capabilities to help designers in creating and editing
models well. Those tools are windows functions, SolidWorks document windows
and function selection and feedback.
28
SolidWorks patent-pending rapid dimensions show the new dimension

placement options and neatly re-arrange current dimensions for selection. The
configuration publisher lets users easily publish a model configurator interface to a
web-based marketplace for 3D parts, assemblies, and other content for selection of
model options. Besides, SolidWorks 2011 also offers improved reference plane
creation methods, sheet metal functionality, weldment performance, component
imaging capabilities, and direct editing tools.
SolidWorks Simulation Premium arms the users with tools to easily validate
design decisions, uncover hidden problems before they affect production and hence
save a lot of money in prototyping. New version also has the event-based motion
simulation, proximity sensors and automatic edge-weld sizing. The overhauled
simulation advisor will guide learners through their first few successful simulations,
shortening the learning curve and adding a layer of protection against errors.
SolidWorks Sustainability software also makes the sustainable design reliable,

reachable and simple. It helps users to govern the carbon footprint, energy
consumption, and air/water impacts in a product designs raw material sourcing,
manufacture, use, and disposal. The users also can compare multiple designs at the
same time due to the configuration support in this software. The assembly
visualization tool color-codes parts are based on their total environmental impact.
SolidWorks 2011 was designed to be quicker and more proficiently,

optimized the support for manufacturing and upgraded the collaboration and
visualization. It allows users to stay longer in this software without reboot the
application. On the other hand, sustainability data also can be added to the assembly
visualization tool. In short, SolidWorks 2011 provides more than 200 enhancements
to be more user-friendly so that they will have more expressive experience and
results throughout the entire process.
29
3.4.2
Multisim 10.0
Multisim is an SPICE simulation program used in industry and classroom

teaching. It is the basis of the NI circuits to train a professional circuit designer
through practical application in designing, modelling, and testing of electrical
circuits. Besides, it is also designed for schematic entry, simulation, and finally leads
to implementation and production of PCB layout.
Multisim provides the reliable circuit design for expertise. It keeps improving
to ensure the circuit designers and researchers can move faster to the stage of PCB
production. One of the advantages of circuit design by using this software is the
designers will have the accurate part selection. Multisim has the database of more
than 22,000 components from top semiconductor manufacturers such as Analog
Devices, National Semiconductor, NXP, ON Semiconductor, and Texas Instruments.
Secondly, it can verify the designs by the simulation. The simulation result
can be used for analysis purpose. Multisim has around 20 industry standard SPICE
analyser and 22 measurement instruments for the designer to validate the
performance of the designed circuit. Thirdly, the design circuit can be translated
faster to PCB prototype since the NI Ultiboard layout environment is wholly
integrated with Multisim. It can save the transfer time and ease the designer work.
Lastly, the design prototype also can be validated by LabVIEW which

integrated together with NI Multisim. The relation between real and simulated results
performance can be verified by integrating the Multisim measurements into NI
LabVIEW. This is important to ensure the physical prototype meets the
specifications. Multisim was chosen as simulation software due to the advantages
stated above and more importantly it is free and easy to learn.
30
CHAPTER 4
PLASMA NEEDLE DESIGN
4.1
Introduction
This section will discuss the design of plasma needle. It will discuss about the
components used, the dimension and the description of the model. The plasma needle
will be designed by using SolidWorks 2011 software.
4.2
Modelling Components
Plasma needle has a very simple design. It comprised of a tungsten needle,

ceramic rod, Pyrex tube, cylinder shape plastic, plastic holder, BNC female, washer
and ring magnet. Figure 4.1 shows the components of the designed plasma needle.
The holder is made of plastic so that it will has a lighter weight and be more userfriendly.
31
Plastic Holder
Cylinder Shape
Washer
Pyrex Tube
BNC Female
Ceramic Rod
Ring Magnet
Tungsten Needle
Figure 4.1: Components of Plasma Needle
4.3
Modelling Dimensions
Figure 4.2: Dimensions of Plasma Needle
32
The designed plasma needle has the length of 118mm with the width of
18mm. it is kept as short and thin as possible so that it is easier for handling. The
plastic holder in the design has the length of 50mm and width of 20mm. One end of
the plastic holder is connected to the BNC female while another end is connected to
the Perspex tube. The gas inlet in the plastic holder has the slope of 450. It is
designed with the slope of 450 so that the gas inlet pipe does not obstruct the
treatment process when plasma needle is being applied in dentistry or other
applications.
Besides, there is a 2mm thick Perspex between the washer and the ring
magnet. The 2mm Perspex is used to fixed the ring magnet at its position. The ring
magnet has the outer diameter (OD) of 18mm and internal diameter (ID) of 12mm.
This ring magnet has to be custom-made as the size is too small and rarely found in
the magnet manufacturing plant.
4.4
Modelling Descriptions
The designed plasma needle has a very simple design. It comprised of a

tungsten needle, ceramic rod, Pyrex tube, cylinder shape plastic, plastic holder, BNC
female, washer and ring magnet. The needle consisted of a tungsten needle (electrode)
of 0.5mm in diameter which is encapsulated in a ceramic rod. The ceramic rod is
used to provide mechanical support as well as electrical insulation for the electrode.
There is also a cylinder shape plastic with holes in the middle of the plasma needle to
provide extra mechanical support to the tungsten and ceramic. The hole in the middle
of cylinder shape plastic is to put the power electrode while the other holes are for
gas helium to go through.
33
Gas Inlet
Ring Magnet
RF Signal
Figure 4.3: Plasma Needle Model
The tip of tungsten needle is uncovered 2mm so that the tungsten can mix
with helium to create the plasma. Both electrode and ceramic tube are embedded in
the Pyrex tube. The Pyrex tube is used to insulate the needle to prevent a discharge
along the pin. The tube is protrudes from the plastic holder. The plastic holder is
designed with a gas inlet hence the gas helium can flow in from the gas inlet.
Another end of the plastic holder is threaded inside so that it can grip the BNC
female tightly. BNC will be connected to the power supply via the coaxial cable.
The novel design is made by adding a 10mm ring magnet at the tip of the
plasma needle. A washer is added so that the ring magnet can be attracted to it. The
ring magnet with different magnetic field strength (Tesla) will be tested to find for
the best magnetic field strength in creating the uniform plasma besides having the
healing effect on the treated area. The washer will only be used in the experiment
stage where it can be removed after the best magnetic field strength was found. The
ring magnet can be glued directly to the Perspex tube after confirm the magnetic
field strength of the ring magnet.
34
Gas Inlet
Needle Tip
Ring Magnet
Figure 4.4: The Pyrex tube moved 5mm into the plastic holder
The Perspex tube which protrudes from the plastic holder can move 5mm into
the plastic holder as shown in Figure 4.4. This is specially design for sterilizing
purpose. Even though the plasma kills most of the bacteria, the plasma needle needs
to be be sterilized after the treatment. Figure 4.5 shows the designed plasma needle
after rendered by using SolidWorks 2011.
Figure 4.5: Plasma Needle after Rendered
35
CHAPTER 5
HIGH FREQUENCY POWER SUPPLY
5.1
Introduction
This section discusses the design of high frequency power supply for biomedical applications. This research aims to design a high frequency power supply
which can generate a voltage up to 200V with the frequency of 13.56MHz. The
design was started with the software simulation and followed by hardware
development. The simulation and hardware development will be discussed in detail.
5.2
Simulation Development
The design of high frequency power supply was started with software
simulation. This is the step to verify whether the design circuit is functioning well
before continue with hardware development. In this research, Multisim 10.0 was
used as the simulation software.
36
5.2.1
Simulation of Modified Class E Amplifier
VCR
VCT
VO
Figure 5.1: Modified Class E Amplifier Simulation Circuit
Figure 5.1 shows the modified Class E amplifier simulation circuit. This
circuit is very simple yet able to generate high voltage and high frequency in
generating non-thermal plasma. The component L1 is functioning as a choke
inductor for filtering. It allows only DC signal to pass through. The RLC load
consisted of R1, L3 and C2. L2 and C1 were combined to form the resonant circuit
with the frequency of 13.56MHz. Their value can be adjusted based on the input
frequency by using the formula
(5.1)
The voltage range from 200Vpp to 600Vpp is needed in generating nonthermal plasma. The voltage is inversely proportional to the required helium flow
rate. The higher the voltage the lower the gas helium required to generate the plasma.
When the gas helium is lower, the cost of generating the plasma is lowered down as
well.
37
According to datasheet RF MOSFET DE275X2-102N06A, it has the VGS(th)

range from 2.5V to 5.5V. Hence, the 5Vp square wave input signal was used to drive
the MOSFET in the simulation. The 5Vp square wave signal was directly enter into
MOSFET without go through a driver. However, there will be a MOSFET driver,
DEIC515 in the real circuit to drive the MOSFET.
In the simulation circuit, the function generator with 5Vp square wave was
used to replace the MAX038. MAX038 is the signal generator IC which able to
generate the waveform frequency up to 20MHz. The input voltage of 20V was used
in the modified Class E amplifier simulation circuit. The 20V input voltage was
connected to the 33H choke inductor.
The Simulated Tektronix Oscilloscope was used in the simulation software to

visualize the output from the circuit. Since the Simulated Tektronix Oscilloscope has
four probes, it can have four outputs at the same time. In this simulation, only two
output signals were shown at the same time.
5.3
Hardware Development
Hardware development was conducted after the software simulation and

components selection. It was started with frequency waveform generator, MAX038,
followed by Driver DEIC 515 and MOSFET DE275X2-106N06A.
38
5.3.1
MAX038 Frequency Waveform Generator
Figure 5.2: MAX038 Frequency Waveform Generator Circuit
Figure 5.2 shows the MAX038 waveform generator circuit. MAX038 can
generate square wave, sine wave and triangle wave. The input to A0 ( pin 3 ) and A1
( pin 4 ) will determine type of waveforms being generated. The MOSFET needs
square wave for its input signal. Hence, both inputs to A0 and A1 were set to 0 to
have the square wave output signal. CF was fixed at 33pF and the frequency of the
output waveform can be adjusted by varying the 20k potentiometer, RIN.
39
4.7
F
RIN, 20k
Output
1nF
-5V
+5V
12k
MAX038
Figure 5.3: MAX038 Hardware Circuit
The +5V was connected to pin 17 while -5V was connected to pin 20 of
MAX038. The 5V was supplied from the regulated DC power supply. The 4.7H
capacitors were used to reduce noise and stabilize the input voltage to MAX038. The
output from MAX038 will be connected to the input of MOSFET Driver, DEIC515.
5.3.2
DEIC515 MOSFET Driver Circuit
Figure 5.4: DEIC515 MOSFET Driver Circuit
40
DEIC515 is a 15A low side ultrafast RF MOSFET driver. It can drive the
MOSFET with the frequency up to 45MHz. However, a very large transient will be
created in DEIC515 due to the high currents and high speeds. L1 as shown in Figure
5.4 is the simple tri-filar winding on a small ferrite core. It is the common mode
choke used at the DEIC515 input to avoid false triggering by directing the input
signals to follow the internal die potential changes.
The input and ground of the square wave were connected to the common
mode choke before entering IN and INGND of the DEIC515. The input voltage, V CC
for DEIC515 was 15V. The input square wave signal has the amplitude of 5Vp. The
output from DEIC 515 was connected to MOSFET DE275X2-102N06A input.
IN
INVCC
10F
VCC
Output
10F
INGND
DEIC515
Ground
Figure 5.5: DEIC515 Hardware Circuit
5.3.3
DEIC515 and DE275X2-102N06A MOSFET Circuit
Figure 5.6 shows the Driver DEIC515 and MOSFET DE275X2-102N06A

circuit on breadboard. The driver DEIC515 was used to drive the MOSFET at
frequency of 5MHz and 8MHz. The output from DEIC515 was connected to the
Gate of the MOSFET. The input voltage, VDD was set at 15V and connected to the
41
Drain of the MOSFET. The output from MOSFET was attached to the Class E
amplifier circuit.
Ground
VDD
Output
DEIC515
DE275X2-102N06A
Figure 5.6: DEIC515 and MOSFET Hardware Circuit
42
CHAPTER 6
RESULTS AND DISCUSSIONS
6.1
Introduction
This section discusses the simulation and the experimental results in this
research. It will start with the simulation result of modified Class E amplifier and
follow by the MAX038, DEIC515 and DE275X2-102N06A hardware results. The
output from the MOSFET, DE275X2-102N06A will be combined with the class E
amplifier to get the high voltage and high frequency output. The results obtained
from the experiment will be compared with the simulation results.
6.2
Simulation Results For Modified Class E Amplifier
Figure 6.1 and 6.2 show the simulated waveforms of VCT, VCR, Vo and Vin.
The simulated results as shown in Figure 6.1 and 6.2 prove that the modified Class E
amplifier able to generate an output voltage of 505Vpp at the frequency of
13.56MHz with an input voltage of 20V. The output voltage is high enough to
43
generate non-thermal plasma after mix with the helium gas. VCT is the simulated
waveform that obtained from the Drain of the MOSFET. It was amplified from 15V
to 99.6Vpp.
VCR
VCT
Figure 6.1: Simulated waveform of VCT and VCR
Vo
Vin
Figure 6.2: Simulated waveform of Vin and Vo
All the components are assumed ideal in the simulation. In reality, many
factors will affect the output of the circuit. The output voltage will be lower than the
simulation result in real experiment.
44
6.3
Hardware Results
The results of MAX038 frequency waveform generator, DEIC515 MOSFET

Driver as well as DE275X2-102N06A MOSFET will be shown in this section.
6.3.1
MAX038 Frequency Waveform Generator
Figure 6.3(a), (b) and (c) show the output signals from MAX038 at frequency
of 5MHz, 10MHz and 13.75MHz. The frequency was varied by adjusting the 20k
potentiometer. The results show that MAX038 can generate square wave at high
frequency. It can be used as the signal generator to replace the function generator in
generating input signal for MOSFET. This will definitely reduce the cost of the power
supply since MAX038 is cheaper than a function generator.
(a)
45
(b)
(c)
Figure 6.3: Output of MAX038 at (a) 5MHz, (b) 10MHz and (c) 13.75MHz
6.3.2
DEIC515 MOSFET Driver
Figure 6.4(a), (b) and (c) show the DEIC515 MOSFET Driver output signal at
frequency of 1MHz, 5MHz and 10MHz. It can be observed that the output from the
Driver has the amplitude of 14Vpp at the frequency of 1MHz. At frequency of 5MHz,
the amplitude was reduced to 7Vpp. The amplitude was decreased to 3.5Vpp at
frequency of 10MHz. However, the square shape still can be observed although the
46
frequency increased to 10MHz. This results show that Driver DEIC515 has the ability
to drive the signal at high frequency.
(a)
(b)
47
(c)
Figure 6.4: Output of DEIC515 at (a) 1MHz, (b) 5MHz and (c) 10MHz
The problem faced was the signal output voltages were decreasing when the
frequency increased. The voltage at the voltage generator also decreased when the
frequency of the input signal increased. There were voltage drop along the circuit
when high frequency being applied to the Driver. The circuit path was inductive and
the reactance, XL= jwL. When f=13.56MHz, the reactance was very large. At this
time, it is believed that most of the supply voltage did not pass through the Driver but
go through the capacitor that connected between the VCC and the ground.
6.3.3
DEIC515 and DE275X2-102N06A MOSFET
Figure 6.5 shows the output signals of MOSFET DE275X2-102N06A being

drove by DEIC515. The output signal from MOSFET has the output voltage of
2.53Vpp at frequency of 5MHz. At frequency of 8MHz, the signal has output voltage
of 1.25Vpp.
48
(a)
(b)
Figure 6.5: Output of DE275X2-102N06A at (a) 5MHz and (b) 8MHz
From the results, it can be observed that the voltage decrease when the
frequency was being increased. It is believed that the MOSFET is not ON during the
experiment since no amplification occurred. The voltage drop along the circuit paths
need to be tackled in order to solve this problem.
49
CHAPTER 7
CONCLUSION & RECOMMENDATION
7.1
Introduction
In this chapter, the researcher will restate the objectives and make the
conclusion based on the results. Besides, recommendation for future research also
will be indicated.
7.2
Conclusion
This research had presented the design of plasma needle and high frequency
power supply for bio-medical applications. First objective of the research to design a
plasma needle was achieved successfully. SolidWorks 2011 software was used to
design the plasma needle. The modelling components, dimensions and descriptions
were discussed in chapter 4 previously. The newly design plasma needle is expected
to improve the plasma uniformity as well as the healing effects on the treated area. It
will be lighter and easier for handling with diverse design and material used.
50
The second objective of the research to design the high frequency power
supply was partially achieved. The simulation of the power supply circuit was
simulated successfully where it managed to produce the high voltage at high
frequency. When it comes to the hardware development, the output at both Driver
and MOSFET were not similar to the simulation result. The DEIC515 and
DE275X2-102N06A were able to drive the input signal at high frequency. However,
the voltage dropping at high frequency needs to be settled before proceed to the
amplifier circuit stage.
Current method of high frequency power supply is very expensive since it

consisted of commercialize function generator and research amplifier. These
equipments are specially used in laboratory for researching and studying purpose.
The research and improvement on the high frequency power supply must be carried
on in order to develop a cheaper yet simpler power supply for future bio-medical
applications.
7.3
Recommendation
Based on the research of this study, here are several recommendations for
future work to improve the high frequency power supply as well as the plasma
needle in bio-medical applications:
1. MAX038 is able to generate the output waveform at high frequency. It can be

used to replace the function generator in the power supply circuit. However,
MAX038 is no longer manufactured by MAXIM and it is hard to buy a large
amount of MAX038 in the market. Due to this reason, an alternative for
MAX038 should be found.
51
2. For RF design, the high speed switching and losses always become the problem
in circuit design. Using DEIC515 and MOSFET DE275X2-102N06A in the
designed circuit was the right one. It has an excellent thermal transfer and able to
optimize the switching speed of the output waveform. Hence, the RF Driver and
RF MOSFET should be used in the future research.
3. During the hardware development, the RF components should be soldered

directly on the PCB instead of testing on the breadboard. The circuit paths also
must be kept as short as possible. These ways are taken to reduce the noises and
power losses during the high speed switching.
4. The introduction of ring magnet is expected to improve the plasma uniformity as

well as the healing effect at the treated area. Therefore, the designed plasma
needle should be fabricated in order to investigate its effects. The most suitable
magnetic field strength can be determined after the experiment.
52
REFERENCES
1.
M K Boudam, M. M., B Saoudi, C Popovici, N Gherardi and F Massines

(2006). Bacterial Spore Inactivation by Atmospheric-Pressure Plasma In The
Presence or Absence of UV Photons as Obtained with the Same Gas Mixture.
2.
Kieft, I. E., M. Kurdi, et al. (2006). Reattachment and Apoptosis After

Plasma-Needle Treatment of Cultured Cells. Plasma Science, IEEE
Transactions on 34(4): 1331-1336.
3.
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IEEE Transactions On Plasma Science 39(11): 2978-2979.
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Science, IEEE Transactions on 37(6): 714-725.
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a non-destructive atmospheric plasma source for fine surface treatment of
(bio)materials. Plasma Sources Science And Technology 11: 383-388.
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H Conrads, M. S. (2000) Plasma generation and plasma sources. 9, 441-454
7.
I.E.Kieft (2005). Plasma Needle: exploring biomedical applications of nonthermal plasmas, Printservice Technische Universiteit Eindhoven: 153.
8.
Moisan, M., J. Barbeau, et al. (2001). Low-temperature sterilization using gas

plasmas: a review of the experiments and an analysis of the inactivation
mechanisms. International Journal of Pharmaceutics 226(12): 1-21.
53
9.
M K Boudam, M. M., B Saoudi, C Popovici, N Gherardi and F Massines

(2006). Bacterial spore inactivation by atmospheric-pressure plasma in the
presence or absence of UV photons as obtained with the same gas mixture.
10.
Sladek, R. E. J., E. Stoffels, et al. (2004). Plasma Treatment of Dental

Cavities: A Feasibility Study. Plasma Science, IEEE Transactions on 32(4):
1540-1543.
11.
Ingrid E. Kieft, D. D., Anton J.M. Roks and Eva Stoffels (2005). Plasma
Treatment of Mammalian Vascular Cells: A Quantitative Description. IEEE
Transactions on Plasma Science 33(2): 771-775.
12.
D. Kim, B. G., D.B. Kim, W. Choe and J.H. Shin (2009). A Feasibility Study
for the Cancer Therapy Using Cold Plasma. ICBME: 355-357.
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55
APPENDIX A
Apparatus for Hardware Experiment
Regulated DC Power Supply, PSM 2/5A
Function Generator, Tektronix AFG 3021B
56
Oscilloscope, LeCray LT344L
Fluke Multimeter
57
APPENDIX B
Datasheet
19-0266; Rev 5; 2/04
KIT
ATION
EVALU
LE
B
A
IL
A
AV
High-Frequency Waveform Generator

____________________________Features
The MAX038 is a high-frequency, precision function

generator producing accurate, high-frequency triangle,
sawtooth, sine, square, and pulse waveforms with a
minimum of external components. The output frequency
can be controlled over a frequency range of 0.1Hz to
20MHz by an internal 2.5V bandgap voltage
reference and an external resistor and capacitor. The
duty cycle can be varied over a wide range by applying
a 2.3V control signal, facilitating pulse-width modulation and the generation of sawtooth waveforms.
Frequency modulation and frequency sweeping are
achieved in the same way. The duty cycle and
frequency controls are independent.
Sine, square, or triangle waveforms can be selected at
the output by setting the appropriate code at two
TTL-compatible select pins. The output signal for all
waveforms is a 2VP-P signal that is symmetrical around
ground. The low-impedance output can drive up
to 20mA.
The TTL-compatible SYNC output from the internal
oscillator maintains a 50% duty cycleregardless of
the duty cycle of the other waveformsto synchronize
other devices in the system. The internal oscillator can
be synchronized to an external TTL clock connected
to PDI.
0.1Hz to 20MHz Operating Frequency Range
________________________Applications
___________________Pin Configuration
Triangle, Sawtooth, Sine, Square, and Pulse

Waveforms
Independent Frequency and Duty-Cycle
Adjustments
350 to 1 Frequency Sweep Range
15% to 85% Variable Duty Cycle
Low-Impedance Output Buffer: 0.1
Low 200ppm/C Temperature Drift
_______________Ordering Information
PART
MAX038CPP
MAX038CWP
MAX038C/D
MAX038EPP*
MAX038EWP*
TEMP RANGE
PIN-PACKAGE
0C to +70C
20 Plastic DIP
0C to +70C
0C to +70C
-40C to +85C
-40C to +85C
20 SO
Dice
20 Plastic DIP
20 SO
*Contact factory prior to design.
Precision Function Generators

Voltage-Controlled Oscillators
Frequency Modulators
TOP VIEW
Pulse-Width Modulators
REF 1
20 V-
Phase-Locked Loops
GND 2
19 OUT
Frequency Synthesizer
A0 3
FSK GeneratorSine and Square Waves
A1 4
18 GND
MAX038
COSC 5
17 V+
16 DV+
GND 6
15 DGND
DADJ 7
14 SYNC
FADJ 8
13 PDI
GND 9
12 PDO
IIN 10
11 GND
DIP/SO
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxims website at www.maxim-ic.com.
MAX038
________________General Description
MAX038

ABSOLUTE MAXIMUM RATINGS
V+ to GND ................................................................-0.3V to +6V
DV+ to DGND...........................................................-0.3V to +6V
V- to GND .................................................................+0.3V to -6V
Pin Voltages
IIN, FADJ, DADJ, PDO .....................(V- - 0.3V) to (V+ + 0.3V)
COSC .....................................................................+0.3V to VA0, A1, PDI, SYNC, REF.........................................-0.3V to V+
GND to DGND ................................................................0.3V
Maximum Current into Any Pin .........................................50mA
OUT, REF Short-Circuit Duration to GND, V+, V- ...................30s
Continuous Power Dissipation (TA = +70C)

Plastic DIP (derate 11.11mW/C above +70C) ..........889mW
SO (derate 10.00mW/C above +70C) .......................800mW
CERDIP (derate 11.11mW/C above +70C) ...............889mW
Operating Temperature Ranges
MAX038C_ _ .......................................................0C to +70C
MAX038E_ _ ....................................................-40C to +85C
Maximum Junction Temperature .....................................+150C
Storage Temperature Range .............................-65C to +150C
Lead Temperature (soldering, 10s) .................................+300C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1, GND = DGND = 0V, V+ = DV+ = 5V, V- = -5V, V DADJ = V FADJ = V PDI = V PDO = 0V, C F = 100pF,
RIN = 25k, RL = 1k, CL = 20pF, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25C.)
PARAMETER
SYMBOL
FREQUENCY CHARACTERISTICS
Maximum Operating Frequency
Fo
Frequency Programming
Current
IIN
IIN Offset Voltage
VIN
Frequency Temperature
Coefficient
Fo/C
CONDITIONS
MIN
TYP
CF 15pF, IIN = 500A
20.0
40.0
VFADJ = 0V
2.50
750
VFADJ = -3V
1.25
375
1.0
VFADJ = 0V
MAX
MHz
2.0
600
Fo/C
VFADJ = -3V
(Fo/Fo)
V- = -5V, V+ = 4.75V to 5.25V
V+
Frequency Power-Supply
Rejection
(Fo/Fo)
V+ = 5V, V- = -4.75V to -5.25V
VOUTPUT AMPLIFIER (applies to all waveforms)
UNITS
A
mV
ppm/C
200
0.4
2.00
0.2
1.00
%/V
Output Peak-to-Peak Symmetry
VOUT
Output Resistance
ROUT
0.1
Output Short-Circuit Current
IOUT
Short circuit to GND
mV
0.2
40
mA
SQUARE-WAVE OUTPUT (RL = 100)

Amplitude
VOUT
Rise Time
tR
10% to 90%
1.9
Fall Time
tF
90% to 10%
Duty Cycle
dc
VDADJ = 0V, dc = tON/t x 100%
2.0
2.1
12
VP-P
ns
12
ns
47
50
53
1.9
2.0
2.1
VP-P
TRIANGLE-WAVE OUTPUT (RL = 100)

Amplitude
VOUT
Nonlinearity
Duty Cycle
FO = 100kHz, 5% to 95%
dc
VDADJ = 0V (Note 1)
0.5
47
50
53
2.0
2.1
VP-P
SINE-WAVE OUTPUT (RL = 100)

Amplitude
VOUT
Total Harmonic Distortion
THD
1.9
CF = 1000pF, FO = 100kHz
2.0
_______________________________________________________________________________________
(Circuit of Figure 1, GND = DGND = 0V, V+ = DV+ = 5V, V- = -5V, V DADJ = V FADJ = V PDI = V PDO = 0V, C F = 100pF,
RIN = 25k, RL = 1k, CL = 20pF, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25C.)
PARAMETER
SYMBOL
SYNC OUTPUT
Output Low Voltage
VOL
Output High Voltage
VOH
Rise Time
tR
Fall Time
tF
Duty Cycle
dcSYNC
DUTY-CYCLE ADJUSTMENT (DADJ)
DADJ Input Current
IDADJ
DADJ Voltage Range
VDADJ
Duty-Cycle Adjustment Range
dc
DADJ Nonlinearity
dc/VFADJ
Change in Output Frequency
Fo/VDADJ
with DADJ
Maximum DADJ Modulating
FDC
Frequency
FREQUENCY ADJUSTMENT (FADJ)
FADJ Input Current
IFADJ
FADJ Voltage Range
VFADJ
Frequency Sweep Range
Fo
FM Nonlinearity with FADJ
Fo/VFADJ
Change in Duty Cycle with FADJ dc/VFADJ
Maximum FADJ Modulating
FF
Frequency
VOLTAGE REFERENCE
Output Voltage
VREF
Temperature Coefficient
CONDITIONS
ISINK = 3.2mA
ISOURCE = 400A
10% to 90%, RL = 3k, CL = 15pF
90% to 10%, RL = 3k, CL = 15pF
MIN
2.8
190
-2.3V VDADJ +2.3V
-2V VDADJ +2V
VREF/IREF
Line Regulation
VREF/V+
MAX
UNITS
0.3
3.5
10
10
50
0.4
V
V
ns
ns
%
250
2.3
320
85
4
A
V
%
%
2.5
15
-2V VDADJ +2V
190
-2.4V VFADJ +2.4V
-2V VFADJ +2V
-2V VFADJ +2V
250
2.4
70
0.2
2
MHz
320
IREF = 0
2.48
VREF/C
Load Regulation
TYP
2.50
20
1
1
1
0mA IREF 4mA (source)

-100A IREF 0A (sink)
4.75V V+ 5.25V (Note 2)
A
V
%
%
%
MHz
2.52
V
ppm/C
2
4
2
mV/mA
mV/V
LOGIC INPUTS (A0, A1, PDI)

Input Low Voltage
VIL
Input High Voltage
VIH
0.8
2.4
Input Current (A0, A1)
IIL, IIH
VA0, VA1 = VIL, VIH
Input Current (PDI)
IIL, IIH
VPDI = VIL, VIH
25
POWER SUPPLY
Positive Supply Voltage
SYNC Supply Voltage
Negative Supply Voltage
Positive Supply Current
SYNC Supply Current
Negative Supply Current
V+
4.75
5.25
DV+
4.75
5.25
V-
-4.75
-5.25
I+
35
45
mA
IDV+
mA
I-
45
55
mA
Note 1: Guaranteed by duty-cycle test on square wave.

Note 2: VREF is independent of V-.
_______________________________________________________________________________________
MAX038
ELECTRICAL CHARACTERISTICS (continued)
__________________________________________Typical Operating Characteristics

(Circuit of Figure 1, V+ = DV+ = 5V, V- = -5V, VDADJ = VFADJ = VPDI = VPDO = 0V, RL = 1k, CL = 20pF, TA = +25C, unless
otherwise noted.)
NORMALIZED OUTPUT FREQUENCY
vs. FADJ VOLTAGE
OUTPUT FREQUENCY
vs. IIN CURRENT
10M
1.8
33pF
100pF
330pF
OUTPUT FREQUENCY (Hz)
1M
3.3nF
100k
10k
MAX038-09
2.0
IIN = 100A, COSC = 1000pF
1.6
FOUT NORMALIZED
MAX038-08
100M
1.4
1.2
1.0
0.8
0.6
33nF
0.4
100nF
0.2
0
-3
1k
-2
-1
1F
VFADJ (V)
3.3F
DUTY CYCLE vs. DADJ VOLTAGE
10F
100
90
47F
100F
0.1
1
10
100
1000
80
DUTY CYCLE (%)
10
MAX038-16B
100
IIN CURRENT (A)
70
60
50
40
30
20
10
IIN = 200A
0
-3
-2
-1
DADJ (V)

vs. DADJ VOLTAGE
IIN = 25A
IIN = 50A
1.00
0.95
IIN = 100A
IIN = 250A
0.90
IIN = 500A
IIN = 500A
1.5
1.0
0.5
IIN = 250A
0
IIN = 100A
-0.5
-1.0
-1.5
IIN = 50A
IIN = 25A
IIN = 10A
-2.0
-2.5
0.85
-2.0
DADJ (V)
MAX038-18
2.0
DUTY-CYCLE LINEARITY ERROR (%)
IIN = 10A
1.05
DUTY-CYCLE LINEARITY
vs. DADJ VOLTAGE
MAX038-17
1.10
MAX038
-1.0
1.0
1.5
2.5
DADJ (V)
_______________________________________________________________________________________
SINE WAVE THD vs. FREQUENCY
SINE-WAVE OUTPUT (50Hz)

MAX038 toc01
7
6
THD (%)
5
4
3
2
1
0
100
1k
10k
100k
1M
FREQUENCY (Hz)
SINE-WAVE OUTPUT (20MHz)
IIN = 400A
CF = 20pF
TRIANGLE-WAVE OUTPUT (20MHz)
IIN = 400A
CF = 20pF
10M
TOP: OUTPUT 50Hz = Fo

BOTTOM: SYNC
IIN = 50A
CF = 1F
TRIANGLE-WAVE OUTPUT (50Hz)

BOTTOM: SYNC
IIN = 50A
CF = 1F
SQUARE-WAVE OUTPUT (50Hz)

BOTTOM: SYNC
IIN = 50A
CF = 1F
_______________________________________________________________________________________
MAX038
_____________________________Typical Operating Characteristics (continued)

otherwise noted.)
MAX038

otherwise noted.)
SQUARE-WAVE OUTPUT (20MHz)
FREQUENCY MODULATION USING FADJ
0.5V
0V
-0.5V
IIN = 400A
CF = 20pF
TOP: OUTPUT
BOTTOM: FADJ
FREQUENCY MODULATION USING IIN
FREQUENCY MODULATION USING IIN
TOP: OUTPUT
BOTTOM: IIN
TOP: OUTPUT
BOTTOM: IIN
PULSE-WIDTH MODULATION USING DADJ

+1V
0V
-1V
+2V
0V
-2V
TOP: SQUARE-WAVE OUT, 2VP-P

BOTTOM: VDADJ, -2V to +2.3V
_______________________________________________________________________________________
OUTPUT SPECTRUM, SINE WAVE

(Fo = 11.5MHz)
0
-20
-20
ATTENUATION (dB)
ATTENUATION (dB)
RIN = 51k (VIN = 2.5V), CF = 0.01F,

VDADJ = 50mV, VFADJ = 0V
-10
MAX038 12B
RIN = 15k (VIN = 2.5V), CF = 20pF,

VDADJ = 40mV, VFADJ = -3V
MAX038-12A
0
-10
OUTPUT SPECTRUM, SINE WAVE

(Fo = 5.9kHz)
-30
-40
-50
-60
-70
-30
-40
-50
-60
-70
-80
-80
-90
-90
-100
-100
0
10 20 30 40 50 60 70 80 90 100
10 15 20 25 30 35 40 45 50
FREQUENCY (MHz)
FREQUENCY (kHz)
______________________________________________________________Pin Description
PIN
NAME
REF
2.50V bandgap voltage reference output
FUNCTION
2, 6, 9,
11, 18
GND
Ground*
A0
Waveform selection input; TTL/CMOS compatible
A1
Waveform selection input; TTL/CMOS compatible
COSC
External capacitor connection
DADJ
Duty-cycle adjust input

Frequency adjust input
FADJ
10
IIN
12
PDO
Phase detector output. Connect to GND if phase detector is not used.
13
PDI
Phase detector reference clock input. Connect to GND if phase detector is not used.
14
SYNC
TTL/CMOS-compatible output, referenced between DGND and DV+. Permits the internal oscillator to be
synchronized with an external signal. Leave open if unused.
15
DGND
Digital ground
16
DV+
17
V+
19
OUT
20
V-
Current input for frequency control
Digital +5V supply input. Can be left open if SYNC is not used.
+5V supply input
Sine, square, or triangle output
-5V supply input
*The five GND pins are not internally connected. Connect all five GND pins to a quiet ground close to the device. A ground plane is
recommended (see Layout Considerations).
_______________________________________________________________________________________
MAX038

otherwise noted.)
MAX038
TRIANGLE
COSC
OSCILLATOR
CF
GND
OSC A
OSC B
A0
A1
SINE
SINE
SHAPER
OUT
TRIANGLE
19
MUX
SQUARE
8
7
10
FADJ
DADJ
OSCILLATOR
CURRENT
GENERATOR
RL
CL
COMPARATOR
IIN
MAX038
RF
RD
RIN
-250A
COMPARATOR
*
+5V
-5V
REF
17
20
V+
V-
2, 9, 11, 18
14
PDO
12
PDI
13
2.5V
VOLTAGE
REFERENCE
PHASE
DETECTOR
GND
DGND
DV+
16
15
= SIGNAL DIRECTION, NOT POLARITY
SYNC
+5V
= BYPASS CAPACITORS ARE 1F CERAMIC OR 1F ELECTROLYTIC IN PARALLEL WITH 1nF CERAMIC.
Figure 1. Block Diagram and Basic Operating Circuit
_______________Detailed Description
The MAX038 is a high-frequency function generator
that produces low-distortion sine, triangle, sawtooth, or
square (pulse) waveforms at frequencies from less than
1Hz to 20MHz or more, using a minimum of external
components. Frequency and duty cycle can be independently controlled by programming the current, voltage, or resistance. The desired output waveform is
selected under logic control by setting the appropriate
code at the A0 and A1 inputs. A SYNC output and
phase detector are included to simplify designs requiring tracking to an external signal source.
The MAX038 operates with 5V 5% power supplies.
The basic oscillator is a relaxation type that operates by
alternately charging and discharging a capacitor, CF,
8
with constant currents, simultaneously producing a triangle wave and a square wave (Figure 1). The charging and discharging currents are controlled by the current flowing into IIN, and are modulated by the voltages
applied to FADJ and DADJ. The current into IIN can be
varied from 2A to 750A, producing more than two
decades of frequency for any value of CF. Applying
2.4V to FADJ changes the nominal frequency (with
VFADJ = 0V) by 70%; this procedure can be used for
fine control.
Duty cycle (the percentage of time that the output waveform is positive) can be controlled from 10% to 90% by
applying 2.3V to DADJ. This voltage changes the CF
charging and discharging current ratio while maintaining
nearly constant frequency.
_______________________________________________________________________________________
The output frequency is inversely proportional to

capacitor CF. CF values can be selected to produce
frequencies above 20MHz.
A sine-shaping circuit converts the oscillator triangle
wave into a low-distortion sine wave with constant
amplitude. The triangle, square, and sine waves are
input to a multiplexer. Two address lines, A0 and A1,
control which of the three waveforms is selected. The
output amplifier produces a constant 2VP-P amplitude
(1V), regardless of wave shape or frequency.
The triangle wave is also sent to a comparator that produces a high-speed square-wave SYNC waveform that
can be used to synchronize other oscillators. The SYNC
circuit has separate power-supply leads and can be
disabled.
Two other phase-quadrature square waves are generated in the basic oscillator and sent to one side of an
exclusive-OR phase detector. The other side of the
phase-detector input (PDI) can be connected to an
external oscillator. The phase-detector output (PDO) is
a current source that can be connected directly to
FADJ to synchronize the MAX038 with the external
oscillator.
Waveform Selection
The MAX038 can produce either sine, square, or triangle waveforms. The TTL/CMOS-logic address pins (A0
and A1) set the waveform, as shown below:
A0
X
0
A1
1
0
WAVEFORM
Sine wave
Square wave
Triangle wave
X = Dont care.
Waveform switching can be done at any time, without
regard to the phase of the output. Switching occurs
within 0.3s, but there may be a small transient in the
output waveform that lasts 0.5s.
Waveform Timing
Output Frequency
The output frequency is determined by the current
injected into the IIN pin, the COSC capacitance (to
ground), and the voltage on the FADJ pin. When
VFADJ = 0V, the fundamental output frequency (Fo) is

given by the formula:
Fo (MHz) = IIN (A) CF (pF)
[1]
The period (to) is:
to (s) = CF (pF) IIN (A)
[2]
where:
IIN = current injected into IIN (between 2A and
750A)
CF = capacitance connected to COSC and GND
(20pF to >100F).
For example:
0.5MHz = 100A 200pF
and
2s = 200pF 100A
Optimum performance is achieved with IIN between
10A and 400A, although linearity is good with I IN
between 2A and 750A. Current levels outside of this
range are not recommended. For fixed-frequency operation, set IIN to approximately 100A and select a suitable capacitor value. This current produces the lowest
temperature coefficient, and produces the lowest frequency shift when varying the duty cycle.
The capacitance can range from 20pF to more than
100F, but stray circuit capacitance must be minimized
by using short traces. Surround the COSC pin and the
trace leading to it with a ground plane to minimize coupling of extraneous signals to this node. Oscillation
above 20MHz is possible, but waveform distortion
increases under these conditions. The low frequency
limit is set by the leakage of the COSC capacitor and
by the required accuracy of the output frequency.
Lowest frequency operation with good accuracy is usually achieved with 10F or greater non-polarized
capacitors.
An internal closed-loop amplifier forces IIN to virtual
ground, with an input offset voltage less than 2mV. IIN
may be driven with either a current source (IIN), or a
voltage (VIN) in series with a resistor (RIN). (A resistor
between REF and IIN provides a convenient method of
generating IIN: IIN = VREF/RIN.) When using a voltage
in series with a resistor, the formula for the oscillator frequency is:
Fo (MHz) = VIN [RIN x CF (pF)] [3]
and:
to (s) = CF (pF) x RIN VIN
[4]
_______________________________________________________________________________________
MAX038
A stable 2.5V reference voltage, REF, allows simple

determination of IIN, FADJ, or DADJ with fixed resistors,
and permits adjustable operation when potentiometers
are connected from each of these inputs to REF. FADJ
and/or DADJ can be grounded, producing the nominal
frequency with a 50% duty cycle.
MAX038

When the MAX038s frequency is controlled by a voltage source (VIN) in series with a fixed resistor (RIN), the
output frequency is a direct function of VIN as shown in
the above equations. Varying VIN modulates the oscillator frequency. For example, using a 10k resistor for
RIN and sweeping VIN from 20mV to 7.5V produces
large frequency deviations (up to 375:1). Select RIN so
that IIN stays within the 2A to 750A range. The bandwidth of the IIN control amplifier, which limits the modulating signals highest frequency, is typically 2MHz.
IIN can be used as a summing point to add or subtract
currents from several sources. This allows the output
frequency to be a function of the sum of several variables. As VIN approaches 0V, the IIN error increases
due to the offset voltage of IIN.
Output frequency will be offset 1% from its final value
for 10 seconds after power-up.
FADJ Input
The output frequency can be modulated by FADJ,
which is intended principally for fine frequency control,
usually inside phase-locked loops. Once the fundamental, or center frequency (Fo) is set by IIN, it may be
changed further by setting FADJ to a voltage other than
0V. This voltage can vary from -2.4V to +2.4V, causing
the output frequency to vary from 1.7 to 0.30 times the
value when FADJ is 0V (Fo 70%). Voltages beyond
2.4V can cause instability or cause the frequency
change to reverse slope.
The voltage on FADJ required to cause the output to
deviate from Fo by Dx (expressed in %) is given by the
formula:
VFADJ = -0.0343 x Dx
[5]
where V FADJ , the voltage on FADJ, is between
-2.4V and +2.4V.
Note: While IIN is directly proportional to the fundamental, or center frequency (Fo), VFADJ is linearly related to
% deviation from Fo. VFADJ goes to either side of 0V,
corresponding to plus and minus deviation.
The voltage on FADJ for any frequency is given by the
formula:
VFADJ = (Fo - Fx) (0.2915 x Fo) [6]
where:
Fx = output frequency
Fo = frequency when VFADJ = 0V.
Likewise, for period calculations:
VFADJ = 3.43 x (tx - to) tx
[7]
where:
tx = output period
10
to = period when VFADJ = 0V.

Conversely, if VFADJ is known, the frequency is given
by:
Fx = Fo x (1 - [0.2915 x VFADJ])
[8]
and the period (tx) is:
tx = to (1 - [0.2915 x VFADJ])
[9]
Programming FADJ
FADJ has a 250A constant current sink to V- that must
be furnished by the voltage source. The source is usually an op-amp output, and the temperature coefficient
of the current sink becomes unimportant. For manual
adjustment of the deviation, a variable resistor can be
used to set VFADJ, but then the 250A current sinks
temperature coefficient becomes significant. Since
external resistors cannot match the internal temperature-coefficient curve, using external resistors to program V FADJ is intended only for manual operation,
when the operator can correct for any errors. This
restriction does not apply when VFADJ is a true voltage
source.
A variable resistor, RF, connected between REF (+2.5V)
and FADJ provides a convenient means of manually
setting the frequency deviation. The resistance value
(RF) is:
RF = (VREF - VFADJ) 250A
[10]
VREF and VFADJ are signed numbers, so use correct
algebraic convention. For example, if V FADJ is -2.0V
(+58.3% deviation), the formula becomes:
RF = (+2.5V - (-2.0V)) 250A
= (4.5V) 250A
= 18k
Disabling FADJ
The FADJ circuit adds a small temperature coefficient
to the output frequency. For critical open-loop applications, it can be turned off by connecting FADJ to GND
(not REF) through a 12k resistor (R1 in Figure 2). The
-250A current sink at FADJ causes -3V to be developed across this resistor, producing two results. First,
the FADJ circuit remains in its linear region, but disconnects itself from the main oscillator, improving temperature stability. Second, the oscillator frequency doubles.
If FADJ is turned off in this manner, be sure to correct
equations 1-4 and 6-9 above, and 12 and 14 below by
doubling Fo or halving to. Although this method doubles
the normal output frequency, it does not double the
upper frequency limit. Do not operate FADJ open circuit or with voltages more negative than -3.5V. Doing
so may cause transistor saturation inside the IC, leading to unwanted changes in frequency and duty cycle.
______________________________________________________________________________________
20
FREQUENCY
1
C1
1F
C3
1nF
V-
10
8
DADJ
IIN
MAX038
OUT
DV+
DGND
SYNC
CF
19
C2
1F
PDI
COSC
PDO
16
13
12
R3
+2.5V
100k
MAX038
R2
50
SINE-WAVE
OUTPUT
R7
100k
R5
100k
N.C.
15
14
R4
100k
REF
FADJ
R1
12k
2.5V
4
V+ A1
AO
RIN
20k
REF
17
MAX038
PRECISION DUTY-CYCLE ADJUSTMENT CIRCUIT
5V +5V
R6
5k
N.C.
Fo =
2 x 2.5V
RIN x CF
DADJ
GND GND GND GND GND

6
2 9 11 18
ADJUST R6 FOR MINIMUM SINE-WAVE DISTORTION
Figure 2. Operating Circuit with Sine-Wave Output and 50% Duty Cycle; SYNC and FADJ Disabled
With FADJ disabled, the output frequency can still be

changed by modulating IIN.
Swept Frequency Operation

The output frequency can be swept by applying a varying signal to IIN or FADJ. IIN has a wider range, slightly
slower response, lower temperature coefficient, and
requires a single polarity current source. FADJ may be
used when the swept range is less than 70% of the
center frequency, and it is suitable for phase-locked
loops and other low-deviation, high-accuracy closedloop controls. It uses a sweeping voltage symmetrical
about ground.
Connecting a resistive network between REF, the voltage source, and FADJ or IIN is a convenient means of
offsetting the sweep voltage.
Duty Cycle
The voltage on DADJ controls the waveform duty cycle
(defined as the percentage of time that the output
waveform is positive). Normally, VDADJ = 0V, and the
duty cycle is 50% (Figure 2). Varying this voltage from
+2.3V to -2.3V causes the output duty cycle to vary
from 15% to 85%, about -15% per volt. Voltages
beyond 2.3V can shift the output frequency and/or
cause instability.
DADJ can be used to reduce the sine-wave distortion.

The unadjusted duty cycle (VDADJ = 0V) is 50% 2%;
any deviation from exactly 50% causes even order harmonics to be generated. By applying a small
adjustable voltage (typically less than 100mV) to
VDADJ, exact symmetry can be attained and the distortion can be minimized (see Figure 2).
The voltage on DADJ needed to produce a specific
duty cycle is given by the formula:
VDADJ = (50% - dc) x 0.0575
[11]
or:
VDADJ = (0.5 - [tON to]) x 5.75 [12]
where:
VDADJ = DADJ voltage (observe the polarity)
dc = duty cycle (in %)
tON = ON (positive) time
to = waveform period.
Conversely, if VDADJ is known, the duty cycle and ON
time are given by:
dc = 50% - (VDADJ x 17.4)
[13]
tON = to x (0.5 - [VDADJ x 0.174]) [14]
______________________________________________________________________________________
11
MAX038

Programming DADJ
DADJ is similar to FADJ; it has a 250A constant current sink to V- that must be furnished by the voltage
source. The source is usually an op-amp output, and
the temperature coefficient of the current sink becomes
unimportant. For manual adjustment of the duty cycle, a
variable resistor can be used to set VDADJ, but then the
250A current sinks temperature coefficient becomes
significant. Since external resistors cannot match the
internal temperature-coefficient curve, using external
resistors to program VDADJ is intended only for manual
operation, when the operator can correct for any errors.
This restriction does not apply when VDADJ is a true
voltage source.
A variable resistor, R D , connected between REF
(+2.5V) and DADJ provides a convenient means of
manually setting the duty cycle. The resistance value
(RD) is:
RD = (VREF - VDADJ) 250A
[15]
Note that both VREF and VDADJ are signed values, so
observe correct algebraic convention. For example, if
VDADJ is -1.5V (23% duty cycle), the formula becomes:
RD = (+2.5V - (-1.5V)) 250A
= (4.0V) 250A = 16k
Varying the duty cycle in the range 15% to 85% has
minimal effect on the output frequencytypically less
than 2% when 25A < IIN < 250A. The DADJ circuit is
wideband, and can be modulated at up to 2MHz (see
photos, Typical Operating Characteristics).
Output
The output amplitude is fixed at 2V P-P, symmetrical
around ground, for all output waveforms. OUT has an
output resistance of under 0.1, and can drive 20mA
with up to a 50pF load. Isolate higher output capacitance from OUT with a resistor (typically 50) or buffer
amplifier.
Reference Voltage
REF is a stable 2.50V bandgap voltage reference capable of sourcing 4mA or sinking 100A. It is principally
used to furnish a stable current to IIN or to bias DADJ
and FADJ. It can also be used for other applications
external to the MAX038. Bypass REF with 100nF to minimize noise.
Selecting Resistors and Capacitors

The MAX038 produces a stable output frequency over
time and temperature, but the capacitor and resistors
that determine frequency can degrade performance if
they are not carefully chosen. Resistors should be
metal film, 1% or better. Capacitors should be chosen
12
for low temperature coefficient over the whole temperature range. NPO ceramics are usually satisfactory.
The voltage on COSC is a triangle wave that varies
between 0V and -1V. Polarized capacitors are generally
not recommended (because of their outrageous temperature dependence and leakage currents), but if they
are used, the negative terminal should be connected to
COSC and the positive terminal to GND. Large-value
capacitors, necessary for very low frequencies, should
be chosen with care, since potentially large leakage
currents and high dielectric absorption can interfere
with the orderly charge and discharge of CF. If possible, for a given frequency, use lower IIN currents to
reduce the size of the capacitor.
SYNC Output
SYNC is a TTL/CMOS-compatible output that can be
used to synchronize external circuits. The SYNC output
is a square wave whose rising edge coincides with the
output rising sine or triangle wave as it crosses through
0V. When the square wave is selected, the rising edge
of SYNC occurs in the middle of the positive half of the
output square wave, effectively 90 ahead of the output.
The SYNC duty cycle is fixed at 50% and is independent of the DADJ control.
Because SYNC is a very-high-speed TTL output, the
high-speed transient currents in DGND and DV+ can
radiate energy into the output circuit, causing a narrow
spike in the output waveform. (This spike is difficult to
see with oscilloscopes having less than 100MHz bandwidth). The inductance and capacitance of IC sockets
tend to amplify this effect, so sockets are not recommended when SYNC is on. SYNC is powered from separate ground and supply pins (DGND and DV+), and it
can be turned off by making DV+ open circuit. If synchronization of external circuits is not used, turning off
SYNC by DV+ opening eliminates the spike.
Phase Detectors
Internal Phase Detector
The MAX038 contains a TTL/CMOS phase detector that
can be used in a phase-locked loop (PLL) to synchronize its output to an external signal (Figure 3). The
external source is connected to the phase-detector
input (PDI) and the phase-detector output is taken from
PDO. PDO is the output of an exclusive-OR gate, and
produces a rectangular current waveform at the
MAX038 output frequency, even with PDI grounded.
PDO is normally connected to FADJ and a resistor,
RPD, and a capacitor CPD, to GND. RPD sets the gain
of the phase detector, while the capacitor attenuates
high-frequency components and forms a pole in the
phase-locked loop filter.
______________________________________________________________________________________

charge CPD, so the rate at which VFADJ changes (the
loop bandwidth) is inversely proportional to CPD.
The phase error (deviation from phase quadrature)
depends on the open-loop gain of the PLL and the initial frequency deviation of the oscillator from the external signal source. The oscillator conversion gain (Ko) is:
[17]
KO = o VFADJ
which, from equation [6] is:
KO = 3.43 x o (radians/sec)
[18]
C1
1F
C2
1F
CENTER
FREQUENCY
RD
14
1
16 17
SYNC DV+ V+
20
VA0
REF
A1
7
10
8
3
4
DADJ
IIN
FADJ
MAX038
OUT
19
RF
OUTPUT
RPD
5
CPD
CF
PDI
COSC
PDO
ROUT
50
13
12
GND GND GND GND GND DGND

2 6
9 11 18 15
EXTERNAL OSC INPUT
Figure 3. Phase-Locked Loop Using Internal Phase Detector
PDO is a rectangular current-pulse train, alternating

between 0A and 500A. It has a 50% duty cycle when
the MAX038 output and PDI are in phase-quadrature
(90 out of phase). The duty cycle approaches 100%
as the phase difference approaches 180 and conversely, approaches 0% as the phase difference
approaches 0. The gain of the phase detector (KD)
can be expressed as:
[16]
KD = 0.318 x RPD (volts/radian)
where RPD = phase-detector gain-setting resistor.
When the loop is in lock, the input signals to the phase
detector are in approximate phase quadrature, the duty
cycle is 50%, and the average current at PDO is 250A
(the current sink of FADJ). This current is divided
between FADJ and RPD; 250A always goes into FADJ
and any difference current is developed across RPD,
creating VFADJ (both polarities). For example, as the
phase difference increases, PDO duty cycle increases,
the average current increases, and the voltage on RPD
(and V FADJ ) becomes more positive. This in turn
decreases the oscillator frequency, reducing the phase
difference, thus maintaining phase lock. The higher
RPD is, the greater VFADJ is for a given phase difference; in other words, the greater the loop gain, the less
the capture range. The current from PDO must also
The loop gain of the PLL system (KV) is:

KV = KD x KO
[19]
where:
KD = detector gain
KO = oscillator gain.
With a loop filter having a response F(s), the open-loop
transfer function, T(s), is:
T(s) = KD x KO x F(s) s
[20]
Using linear feedback analysis techniques, the closedloop transfer characteristic, H(s), can be related to the
open-loop transfer function as follows:
H(s) = T(s) [1+ T(s)]
[21]
The transient performance and the frequency response
of the PLL depends on the choice of the filter characteristic, F(s).
When the MAX038 internal phase detector is not used,
PDI and PDO should be connected to GND.
External Phase Detectors

External phase detectors may be used instead of the
internal phase detector. The external phase detector
shown in Figure 4 duplicates the action of the MAX038s
internal phase detector, but the optional N circuit can
be placed between the SYNC output and the phase
detector in applications requiring synchronizing to an
exact multiple of the external oscillator. The resistor network consisting of R4, R5, and R6 sets the sync range,
while capacitor C4 sets the capture range. Note that
this type of phase detector (with or without the N circuit) locks onto harmonics of the external oscillator as
well as the fundamental. With no external oscillator
input, this circuit can be unpredictable, depending on
the state of the external input DC level.
Figure 4 shows a frequency phase detector that locks
onto only the fundamental of the external oscillator.
With no external oscillator input, the output of the frequency phase detector is a positive DC voltage, and
the oscillations are at the lowest frequency as set by
R4, R5, and R6.
______________________________________________________________________________________
13
MAX038
+5V -5V
MAX038
-5V
+5V
C1
1F
C2
1F
N
14
CENTER
FREQUENCY
16
17
20
SYNC DV+ V+
VA0
REF
A1
R2
3
4
CW
7
R3
PHASE DETECTOR
10
R4
R5
OFFSET
EXTERNAL
OSC INPUT
DADJ
MAX038
IIN
OUT
-5V
RF
OUTPUT
FADJ
R6
GAIN
5
R1
50
19
PDI
COSC
PDO
13
12

2 6
9 11 18 15
C4
C3
CAPTURE FREQUENCY
Figure 4. Phase-Locked Loop Using External Phase Detector
+5V
-5V
C1
1F
C2
1F
N
14
CENTER
FREQUENCY
16
17
SYNC DV+ V+
20
VA0
REF
R2
A1
3
4
CW
7
R3
FREQUENCY PHASE DETECTOR
10
R4
EXTERNAL
OSC INPUT
R5
OFFSET
DADJ
IIN
-5V
C4
C3
CAPTURE FREQUENCY
OUT
19
PDI
COSC
PDO
13
12

2 6
9 11 18 15
Figure 5. Phase-Locked Loop Using External Frequency Phase Detector
14
R1
50
RF
OUTPUT
FADJ
R6
GAIN
5
MAX038
______________________________________________________________________________________
28
8.192MHz
LD
N11
OSCOUT
OSCIN
N10
FIN
PD1OUT
VDD
VSS
RA0
0.1F
3.3M
MAX427
0.1F
33k
VDD
PDR
BIT7
PDV
BIT8
BIT6
3.3M
BIT9
BIT5
N8 MC145151 FV
N9
PDV
T/R
PDR
N12
RA2
RA1
N13
BIT10
BIT4
N0
BIT11
BIT3
N1
BIT2
33k
BIT12
N
N6
MX7541
N7
14
BIT1
N3
N2
GND
N4
N5
18
0.1F
VREF
10
RFB
OUT2
35pF
20pF
512kHz
1.024MHz
2.048MHz
4.096MHz
8.192MHz
15
1kHz
2kHz
4kHz
8kHz
16kHz
32kHz
64kHz
128kHz
256kHz
OUT1
______________________________________________________________________________________
0.1F
7.5k
10k
0.1F
MAX412
+2.5V
3.33k
2N3904
2.5V
0.1F
2
0V TO 2.5V
35
pF
10
1N914
GND1
PDO
IIN
GND1
SYNC
DADJ
PDI
DGND
GND1
FADJ
DV+
COSC
V+
GND
A0
MAX038
OUT
GND1
A1
V-
VREF
2A to
750A
2N3906
WAVEFORM
SELECT
MAX412
2.7M
1k
11
20
0.1
F
100
50.0
56pF
110pF
-5V
SYNC
OUTPUT
SIGNAL
OUTPUT
56pF
50
FREQUENCY SYNTHESIZER 1kHz RESOLUTION; 8kHz TO 16.383MHz
0.1F
0.1F
50, 50MHz
LOWPASS FILTER
220nH
220nH
+5V
MAX038
1k
Figure 6. Crystal-Controlled, Digitally Programmed Frequency Synthesizer8kHz to 16MHz with 1kHz Resolution
15
MAX038

Layout Considerations
Realizing the full performance of the MAX038 requires
careful attention to power-supply bypassing and board
layout. Use a low-impedance ground plane, and connect all five GND pins directly to it. Bypass V+ and Vdirectly to the ground plane with 1F ceramic capacitors or 1F tantalum capacitors in parallel with 1nF
ceramics. Keep capacitor leads short (especially with
the 1nF ceramics) to minimize series inductance.
If SYNC is used, DV+ must be connected to V+, DGND
must be connected to the ground plane, and a second
1nF ceramic should be connected as close as possible
between DV+ and DGND (pins 16 and 15). It is not
necessary to use a separate supply or run separate
traces to DV+. If SYNC is disabled, leave DV+ open.
Do not open DGND.
Minimize the trace area around COSC (and the ground
plane area under COSC) to reduce parasitic capacitance, and surround this trace with ground to prevent
coupling with other signals. Take similar precautions
with DADJ, FADJ, and IIN. Place CF so its connection
to the ground plane is close to pin 6 (GND).
___________Applications Information
Frequency Synthesizer
Figure 6 shows a frequency synthesizer that produces
accurate and stable sine, square, or triangle waves with
a frequency range of 8kHz to 16.383MHz in 1kHz increments. A Motorola MC145151 provides the crystal-controlled oscillator, the N circuit, and a high-speed phase
detector. The manual switches set the output frequency;
opening any switch increases the output frequency.
Each switch controls both the N output and an
MX7541 12-bit DAC, whose output is converted to a current by using both halves of the MAX412 op amp. This
current goes to the MAX038 IIN pin, setting its coarse
frequency over a very wide range.
Fine frequency control (and phase lock) is achieved
from the MC145151 phase detector through the differential amplifier and lowpass filter, U5. The phase detec-
tor compares the N output with the MAX038 SYNC

output and sends differential phase information to U5.
U5s single-ended output is summed with an offset into
the FADJ input. (Using the DAC and the IIN pin for
coarse frequency control allows the FADJ pin to have
very fine control with reasonably fast response to switch
changes.)
A 50MHz, 50 lowpass filter in the output allows passage of 16MHz square waves and triangle waves with
reasonable fidelity, while stopping high-frequency noise
generated by the N circuit.
___________________Chip Topography
GND
REF
V-
OUT
AO
GND
V+
A1
DV+
DGND
COSC
0.118"
(2.997mm)
SYNC
GND
DADJ
PDI
FADJ GND IIN
GND
0.106"
(2.692mm)
PDO
TRANSISTOR COUNT: 855

SUBSTRATE CONNECTED TO GND
Package Information
For the latest package outline information, go to
www.maxim-ic.com/packages.
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
16 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
2004 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.
DEIC515
15 Ampere Low-Side Ultrafast RF MOSFET Driver
Features
Description
Built using the advantages and compatibility

of CMOS and IXYS HDMOSTM processes
Latch-Up Protected
High Peak Output Current: 15A Peak
Wide Operating Range: 8V to 30V
Rise And Fall Times of <4ns
Minimum Pulse Width Of 8ns
High Capacitive Load
Drive Capability: 2nF in <4ns
Matched Rise And Fall Times
18ns Input To Output Delay Time
Low Output Impedance
Low Quiescent Supply Currentt
TheDEIC515 is a CMOS high speed high current gate

driver specifically designed to drive MOSFETs in Class
D and E HF RF applications at up to 45MHz, as well as
other applications requiring ultrafast rise and fall times or
short minimum pulse widths. The DEIC515 can source
and sink 15A of peak current while producing voltage
rise and fall times of less than 4ns, and minimum pulse
widths of 8ns. The input of the driver is fully immune to
latch up over the entire operating range. Designed with
small internal delays, cross conduction/current shootthrough is virtually eliminated in the DEIC515. Its
features and wide safety margin in operating voltage
and power make the DEIC515 unmatched in
performance and value.
Applications
Driving RF MOSFETs
Class D or E Switching Amplifier Drivers
Multi MHz Switch Mode Power Supplies (SMPS)
Pulse Generators
Acoustic Transducer Drivers
Pulsed Laser Diode Drivers
DC to DC Converters
Pulse Transformer Driver
The DEIC515 is packaged in DEI's low inductance RF

package incorporating DEI's patented (1) RF layout
techniques to minimize stray lead inductances for
optimum switching performance. The DEIC515 is a
surface-mount device. (1) DEI U.S. Patent #4,891,686
Figure 1 - DEIC515 Functional Diagram
VCC IN
IN
IN GND
VCC
OUT
DGND
DEIC515
Absolute Maximum Ratings
Parameter
Value
Supply Voltage
30V
Input
-5V to Vccin+0.3V
Parameter
Maximum Junction Temperature
All other Pins
-0.3V to (Vcc,Vccin)+0.3V
Operating Temperature Range
Power Dissipation
TAMBIENT25C
Tcase25C
2W
100W
Storage Temperature
-40C to 150C
Value
150oC
-40oC to 85oC
Thermal Impedance (Junction To Case)
JC
0.13oC/W
Soldering Lead Temperature 300C

(10 seconds maximum)
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 8V < VCC =VCCIN < 30V .
All voltage measurements with respect to DGND. DEIC515 configured as described in Test Conditions.
Symbol Parameter
VIH
VIL
VIN
High input voltage

Low input voltage
Input voltage range
IIN
VOH
VOL
ROH
Input current
High output voltage
Low output voltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
ROL
IPEAK
IDC
Maximum frequency
Rise time (1)
tF
Fall time (1)
tONDLY
On-time propagation
delay (1)
Off-time propagation
delay (1)
Minimum pulse width
PWmin
Typ
Power supply current
Max
VCCIN -2
0.8
VCC + 0.3
-5
0V VIN VCC,VCCIN
10
Units
V
V
V
IOUT = 10mA, VCC = 15V
0.55
0.025
0.85
A
V
V
IOUT = 10mA, VCC = 15V
0.35
0.85
-10
VCC,VCCIN - .025
VCC,VCCIN = 15V
15
2.5
CL=2nF VCC,VCCIN =15V

CL=1nF VCC,VCCIN =15V VOH=2V to 12V
CL=2nF Vcc=15V
2.5
4.1
2.5
3.9
17.4
18.5
MHz
ns
ns
ns
ns
ns
CL=2nF Vcc=15V
14.6
16
ns
FWHM CL=1nF VCC,VCCIN =15V

+3V to +3V CL=1nF VCC,VCCIN =15V
6.4
8.2
15
30
ns
ns
V
VCC,VCCIN Power supply voltage

ICC
Min
Continuous output
current
fMAX
tR
tOFFDLY
Test Conditions
45
8
VIN = 0V
VIN = VCCIN
10
10
A
A
DEIC515
Lead Description - DEIC515
SYMBOL
VCC
VCCIN
IN
OUT
PGND
INGND
FUNCTION
DESCRIPTION
Input for the positive output section power-supply voltage. These leads provide
Output Supply Voltage
power to the output section. Both leads must be connected.
Input for the positive input section power-supply voltage. This lead provide
Supply Voltage
power to the input section. This lead should not be directly connected to VCC.
Input
Input signal.
Output
Driver Output.
The system ground leads. Internally connected to all circuitry, these leads provide
ground reference for the entire chip. These leads should be connected to a low noise
Power Ground
analog ground plane for optimum performance.
The input ground lead. This lead is a Kelvin connection internally to PGND.
This lead must not be connected to PGND as excessive current can damage this
Input Ground
lead.
Note 1: Operating the device beyond parameters with listed absolute maximum ratings may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 2 - DEIC515 Package Photo And Outline
Bottom View
DEIC515
Typical Performance Characteristics
Figure 3a - Characteristics Test Diagram
INVCC VCC
VCC
IN
Input
10F
L1
OUT
CL
10F
INGND GND
Application
The very high currents and high speeds inside the DEIC515 create very large transients. To avoid problems with
false triggering, the input to the DEIC515 should be supplied via a common mode choke. This is a simple tri-filar
winding on a small ferrite core. This prevents high speed transients from effecting the input signals, by allowing the
input signals to follow the internal die potential changes without changing the state of the input.
DE275X2-102N06A
RF Power MOSFET
Common Source Push-Pull Pair

N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a

common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
VDSS
1000 V
ID25
16 A
RDS(on)
0.8
PDC
= 1180 W
Unless noted, specifications are for each output device
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
1000
VDGR
TJ = 25C to 150C; RGS = 1 M
1000
VGS
Continuous
20
VGSM
Transient
30
ID25
Tc = 25C
16
IDM
Tc = 25C, pulse width limited by TJM
48
IAR
Tc = 25C
EAR
Tc = 25C
20
mJ
V/ns
dv/dt
IS IDM, di/dt 100A/s, VDD VDSS,

Tj 150C, RG = 0.2
>200
V/ns
1180
750
5.0
PDC (1)
PDHS (1)
Tc = 25C, Derate 5.0W/C above 25C
PDAMB (1)
Tc = 25C
Symbol
Test Conditions
Characteristic Values
TJ = 25C unless otherwise specified
min.
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 4 ma
IGSS
VGS = 20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25C

TJ = 125C
VGS = 0
RDS(on)
100
nA
50
1
A
mA
1.6
0.25
C/W
0.50
C/W
+175
175
TJM
-55
Tstg
Weight
5.5
7.5
-55
TJ
1.6mm (0.063 in) from case for 10 s
GATE 2
SD2
SourceSG2
2
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
High Performance Push-Pull RF

Package
Optimized for RF and high speed
(1)
TL
2.5
RthJC (1)
RthJHS
max.
1000
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300S, duty cycle d 2%
VDS = 15 V, ID = 0.5ID25, pulse test
gfs
typ.
DRAIN 2
GATE 1
SG1
SourceSD1
1
IS = 0
VDSS
DRAIN 1
+175
switching at frequencies to >100MHz
Easy to mountno insulators needed

High power density
Note: All specifications are per each

transistor, unless otherwise noted.
(1)
300
Thermal specifications are for the

package, not per transistor
DE275X2-102N06A
RF Power MOSFET
Symbol
Test Conditions
(TJ = 25C unless otherwise specified)
min.
typ.
0.3
1800
pF
130
pF
25
pF
21
pF
ns
ns
ns
ns
50
nC
20
nC
30
nC
RG
Ciss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Coss
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS

ID = 0.5 IDM
RG = 0.2 (External)
Toff
Qg(on)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgs
Qgd
Source-Drain Diode
max.
(TJ = 25C unless otherwise specified)
Symbol
Test Conditions
min.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 s, duty cycle 2%
typ.
Trr
IF = IS, -di/dt = 100A/s,
VR = 100V
QRM
IRM
(1)
max.
6
96
1.5
200
ns
0.6
These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the DESeries MOSFET Mounting Instructions technical note on IXYS RFs web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
DE275X2-102N06A
RF Power MOSFET
275X2-102N06A Capacitances vs Vds
10000
Ciss
Coss
Capacitance in pF
Crss
1000
100
10
0
100
200
300
400
500
600
700
800
900
1000
Vds in Volts
S = S1 = Source1
S = S1 = Source1
G1 = Gate1
D1 = Drain1
G2 = Gate2
D2 = Drain2
S = S2 = Source2
S = S2 = Source2
Note: Sources S1, S2 are independent, having no common connection between them for the package diagram.
DE275X2-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds
is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are
modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
Rd
Lg
Doff
D1crs
Roff
D2crs
20 GATE
8
1
5
Ron
Don
Dcos
Rds
M3
2
7
Ls
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYS RF web site at
www.ixysrf.com
Net List:
*SYM=POWMOSN
.SUBCKT 102N06A 10 20 30
* TERMINALS: D G S
* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .5
DON 6 2 D1
ROF 5 7 1.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 1.9N
RD 4 1 1.6
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
Doc #9200-0224 Rev 6

2006 IXYS RF
An
IXYS Company
2401 Research Blvd., Suite 108

Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com

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UNIVERSITI TEKNOLOGI MALAYSIA

DECLARATION OF THESIS / UNDERGRADUATE PROJECT PAPER AND COPYRIGHT

DESIGN OF PLASMA NEEDLE AND HIGH FREQUENCY

I declare that this thesis is classified as :

(Contains confidential information under the

(Contains restricted information as specified by

I agree that my thesis to be published as online

I acknowledged that Universiti Teknologi Malaysia reserves the right as follows :

The thesis is the property of Universiti Teknologi Malaysia.

ASSOC. PROF. DR. ZOLKAFLE BUNTAT

27th JUNE 2012

27th JUNE 2012

If the thesis is CONFIDENTAL or RESTRICTED, please attach with the

I hereby declared that I have read this thesis and in my

Name of Supervisor : ASSOC. PROF. DR. ZOLKAFLE BUNTAT

: 27th JUNE 2012

DESIGN OF PLASMA NEEDLE AND HIGH FREQUENCY POWER

This report is submitted in partial fulfillment of the

Faculty of Electrical Engineering

: 27th JUNE 2012

First of all, I would like to express my heartiest gratitude to my supervisor,

My deepest appreciation goes to my family, friends, fellow course mates and

Non-thermal plasma treatment of living tissues has become a popular topic in

1.3 Problem Statement

1.5 Scope of the Project

1.6 Significance of the Study

2.2 Plasma Generation

2.3 Plasma Needle

2.4 Design of Plasma Needle

2.5 Class E Amplifier as RF Plasma Source

2.6 45MHz MOSFET Driver

2.7.1 MOSFET Turn-on Phenomena

2.7.2 MOSFET Turn-off Phenomena

2.8 Magnetic Effects on Living Organism

2.9 Application of Plasma Needle

2.9.1 Dental Applications

2.9.2 Plasma Treatment on Mammalian Vascular

3.2 Methodology Procedure

3.3 Related Guidelines and Datasheets

3.4 Software Used for Modelling

3.4.1 SolidWorks 2011

3.4.2 Multisim 10.0

PLASMA NEEDLE DESIGN

4.2 Modelling Components

4.3 Modelling Dimensions

4.4 Modelling Descriptions

HIGH FREQUENCY POWER SUPPLY

5.2 Simulation Development

5.2.1 Simulation of Modified Class E Amplifier

5.3.1 MAX038 Frequency Waveform Generator

5.3.2 DEIC515 MOSFET Driver Circuit

5.3.3 DEIC515 and DE275X2-102N06A MOSFET

RESULTS AND DISCUSSIONS

6.2 Simulation Results for Modified Class E Amplifier

6.3 Hardware Results

6.3.1 MAX038 Frequency Waveform Generator

6.3.2 DEIC515 MOSFET Driver

6.3.3 DEIC515 and DE275X2-102N06A MOSFET

CONCLUSION AND RECOMMENDATION

General Schematic of RF Capacitively Coupled

Schematic of Plasma Needle Setup

Stability Curves of The Plasma