AON6788

30V N-Channel MOSFET

SRFET
General Description

TM

Product Summary

SRFETTM AON6788 uses advanced trench technology

with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.

VDS

30V
80A

ID (at VGS=10V)
RDS(ON) (at VGS=10V)

< 4m

RDS(ON) (at VGS = 4.5V)

< 4.9m

100% UIS Tested

100% Rg Tested

DFN5X6

Top View
Top View

Bottom View
1

SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G

PIN1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G

VGS
TC=25C

Pulsed Drain Current C

Continuous Drain
Current

V
A

200
17

IDSM

TA=70C

12
62

IDM
TA=25C

Units
V

80

ID

TC=100C

Maximum
30

14

Avalanche Current C

IAS, IAR

40

Avalanche energy L=0.1mH C

TC=25C

EAS, EAR

80

mJ

Power Dissipation B

TA=25C
Power Dissipation A

Junction and Storage Temperature Range

Rev2 : July 2011

Steady-State
Steady-State

RJA
RJC

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1.3

TJ, TSTG

Symbol
t 10s

31

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case

78

PD

TC=100C

-55 to 150

Typ
24
53
1.2

Max
30
64
1.6

Units
C/W
C/W
C/W

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AON6788

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Min

Conditions
ID=250A, VGS=0V

0.5

IGSS

Gate-Body leakage current

VDS=0V, VGS= 12V

VGS(th)

Gate Threshold Voltage

VDS=VGS ID=250A

1.2

ID(ON)

On state drain current

VGS=10V, VDS=5V

200

TJ=125C

100
100

VGS=10V, ID=20A

5.8

VGS=4.5V, ID=20A

3.6

4.9

VDS=5V, ID=20A

115

0.4

Forward Transconductance

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous CurrentG

TJ=125C

DYNAMIC PARAMETERS
Ciss
Input Capacitance

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

V
A

4.7

gFS

Rg

nA

Static Drain-Source On-Resistance

Output Capacitance

1.5

mA

3.2

RDS(ON)

Reverse Transfer Capacitance

Units
V

VDS=30V, VGS=0V

Zero Gate Voltage Drain Current

Coss

Max

30

IDSS

Crss

Typ

VGS=10V, VDS=15V, ID=20A

m
m

80

3500

4380

5250

pF

340

490

640

pF

160

280

400

pF

0.3

0.7

1.0

24

31

38

nC

11

13

nC

13

nC

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/s

12

15

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s

17

22

27

VGS=10V, VDS=15V, RL=0.75,

RGEN=3

10

ns

ns

50

ns

ns
ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev2 : July 2011

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AON6788

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150

100
10V

4.5V
VDS=5V

3V
120

80
7V

90
ID(A)

ID (A)

60
125C

40

60

20

30

25C

VGS=2.5V
0

0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5

2.5

Normalized On-Resistance

2
VGS=4.5V

4
RDS(ON) (m )

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

3
VGS=10V
2
1
0

1.8

VGS=4.5V
ID=20A

1.6

17
5
2
10

1.4
VGS=10V
ID=20A

1.2
1
0.8

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

200

0
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

10

1.0E+02
ID=20A

125C

1.0E+01

40

125C

IS (A)

RDS(ON) (m )

1.0E+00

25C

1.0E-01
1.0E-02

1.0E-03
2

25C

1.0E-04

1.0E-05
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev2 : July 2011

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0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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AON6788

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

6000

10
VDS=15V
ID=20A

5000
Capacitance (pF)

VGS (Volts)

4000
3000
2000
Crss

0
0

20

40
60
Qg (nC)
Figure 7: Gate-Charge Characteristics

80

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

200

1000.0
10s

RDS(ON)
limited

160

10.0

100s
DC

1ms
10ms

1.0

TJ(Max)=150C
TC=25C

0.1

0.1

17
5
2
10

120
80
40

0.0
0.01

TJ(Max)=150C
TC=25C

10s
Power (W)

100.0
ID (Amps)

Coss

1000

1
VDS (Volts)

10

100

0
0.0001

10
D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC

0.001

0.01

0.1

10

Pulse Width (s)

18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

Z JC Normalized Transient
Thermal Resistance

Ciss

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJC=1.6C/W

PD

0.1

Ton
Single Pulse

0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev2 : July 2011

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AON6788

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

IAR (A) Peak Avalanche Current

1000

100

TA=100C
100

TA=150C

10

80

Power Dissipation (W)

TA=25C

TA=125C

60

40

20

0
1

10
100
1000
s)
Time in avalanche, tA (
Figure 12: Single Pulse Avalanche capability
(Note C)

25

50

75

100

125

150

TCASE (C)
Figure 13: Power De-rating (Note F)

100

10000

80

1000
Power (W)

Current rating ID(A)

TA=25C

60

40

17
5
2
10

100

10
20

1
0.00001

0
0

25

50

75

100

125

Z JA Normalized Transient
Thermal Resistance

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA

0.1

10

1000

0
18

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

TCASE (C)
Figure 14: Current De-rating (Note F)

10

0.001

150

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJA=64C/W

0.1
PD

0.01

Single Pulse
Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev2 : July 2011

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AON6788

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01

0.7
20A

10A

5A

0.6
1.0E-02

0.5

IR (A)

VSD (V)

VDS=30V
1.0E-03

0.4
0.3

IS=1A

VDS=15V
0.2

1.0E-04

0.1
0

1.0E-05
100
150
200
Temperature (C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature

40

50

100
150
200
Temperature (C)
Figure 18: Diode Forward voltage vs. Junction
Temperature

14

12

3
di/dt=800A/s
125C

12
10

25

25C

Qrr

20

trr (ns)

Irm (A)

125C

30

125C
4

10
10

15

1.5
6

125C
1

20

25

0
0

30

10

15

20

20

4
Is=20A

18
125C

15

Qrr

10
125C

Irm

trr (ns)

10

Irm (A)

25C

trr

15

20
15

200

400

600

800

1000

125C
2

9
S

1.5

25C

1
0.5

125

0
0

di/dt (A/
s)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt

Rev2 : July 2011

3
2.5

12

25C
0

3.5

25C

30

21

Is=20A
25

25

IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current

IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
30

0.5

25C

2
5

25C

25C
0

trr

Irm

15

Qrr (nC)

2.5

10

di/dt=800A/s

35

Qrr (nC)

50

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200

400

600

800

1000

di/dt (A/
s)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt

Page 6 of 7

AON6788

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds
90%

+ Vdd

DUT

Vgs

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

E AR = 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT

Vds Isd
Vgs
Ig

Rev2 : July 2011

Vgs

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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