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fully edited. Content may change prior to final publication. Citation information: DOI
10.1109/TIE.2015.2448518, IEEE Transactions on Industrial Electronics
I. INTRODUCTION
UDIO amplifier design has recently been the focus of
research interest with the increasing popularity of portable
consumer electronics. High quality audio amplifiers should
exhibit high power efficiency, while maintaining satisfying
high fidelity to the human ear at the same time. Class-A, B, and
AB audio amplifiers topologies provide the best linearity;
however, due to poor power efficiency, their applications are
limited to low power ear jack amplifiers [1]. Class-D amplifiers,
on the other hand, provide high power efficiency [2] over a
wide modulation index range. Thereby, power consumption
and heat dissipation can be reduced simultaneously even with
high crest factor for audio [3] and RF applications [4] alike.
Due to the switching nature of class-D amplifiers, the output
signal will be affected by additional total harmonic distortion
(THD) components and linearity will be degraded [5]. Hence,
in order to improve the audio quality of the class-D audio
amplifiers, THD components must be minimized.
Manuscript received February 13, 2015; revised April 12, 2015; accepted
May 7, 2015.
Copyright 2015 IEEE. Personal use of this material is permitted.
However, permission to use this material for any other purposes must be
obtained from the IEEE by sending a request to pubs-permissions@ieee.org
Ke-Horng Chen is with the Department of Electrical Engineering, National
Chiao Tung University, Hsinchu, Taiwan, (phone: +886-3-5712121-54390;
fax: +886-3-5715998; e-mail: khchen@cn.nctu.edu.tw). S.-H. Yang and Y.-H.
Yang are with the Institute of Electrical and Computer Engineering, National
Chiao Tung University. Ying-Hsi Lin, Tsung-Yen Tsai, Jian-Ru Lin, and
Chao-Cheng Lee are with Realtek Semiconductor Corp., Hsinchu 300, Taiwan.
Input
Audio
Signal
Vin
Integrator
Output VI
Integrator
Triangular
Waveform VC
PWM
Signal bpwm
PWM
Power
Stage
Switching Audio
Signal
Filter
Filtered Audio
Signal
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Integrator output VI
m
2
m 1
m
sin
cos m c t c
2
2
2
m
m N ,2 N ,...
m
sin
2
cos m c t c
mM
Jn
2
(m n)
sin
2
m
2
m N ,2 N ,.. n 1
cos m c t c n I t I
(2)
(1)
2
mM (m n)
Jn
sin
2
m 1 n 1 m 2
cos m c t c n I t I
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SW [N]
SW [2]
Regulator
Output VI
PSCPWM
Regulator
Reference
Signal Vin
SW <1>
SW <1:>
SW <POS/NEG>
Decoder
& Driver
SW <>
Vout
Feedback Path
Regulator
MLCPWM
PWM Signal N
bpwm <1:N>
Regulator Output VI
MLCPWM Carriers
VC <1:N>
(a)
Zload
Reference
Signal Vin
(a)
MLCPWM carriers:
VC <1>
VC <2>
VC <N>
Regulator output VI
PSCPWM carriers:
VC <1>
VC <2>
VC <N>
Regulator output VI
PWM signal bpwm <1>
+V
DPOS <1:(/2-1)>
PSCPWM
Carriers VC [1:N]
DNEG <1:(/2-1)>
VDCN
(b)
Fig. 3. (a) A DC/AC inverter with the PSCPWM technique. (b) PWM
waveforms of the PSCPWM.
SW [1]
Zload
SW [N]
VDCN-1
VDC2
Feedback Path
SW [1]
VDC1
VDD
-V
Vout
SW [2]
(b)
Fig. 4. (a) A DC/AC inverter and (b) PWM waveforms of the MLCPWM
technique.
bpwm (t ) M cos I t I
mM
J0
2
2
m
m N 1,2 N 1,...
m
sin
2
cos m c t c
mM
Jn
2 sin (m n)
2
m
2
m N 1,2 N 1,.. n 1
(3)
cos m c t c n I t I
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DLDPC carriers:
VC <1>
VC <2>
VC <3>
VC <4>
Switch signal SW
Integrator PWM signal
output VI bpwm <1:N1+N2>
VI
DLDPC
PWM
Reference
Signal Vin
Order
Integrator
VB2
bpwm (t ) M cos(I t I )
VOP
m( N 2 1) M
Jn
2
2
m( N 2 1)
m N1 ,2 N1 ,... n 1
M5
VON
VIP
VIN
M7
M2
M4
M1
M3
M12 M16
M6
M8
(a)
VDD
VDD
M
VB1 B11
MB13 VB1
VB2
VOP
MB12
MB14 VB2
VDD
VCMFB
m( N 2 1)
sin
cos m(c t c )
2
MB6
MB2
M15 M11
M20
M17
m( N 2 1) M
J0
2
m( N 2 1)
m N1 ,2 N1 ,...
MB10 M14
MB5
VC <1:N1+N2>
Power
Stage
DLDPC
DLDPC
Triangular Wave
Carriers
Generator
2nd
N1+N2
M19
M21
M23
M22
M24
VON
(b)
(c)
Fig. 7. (a) A fully differential Class-AB operational amplifier, (b) CMFB,
and (c) bias circuit (start-up circuit not shown).
(4)
m( N 2 1) n
sin
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CLK
Master
MI1 Integrator
0.5C
1V
Q1
VDD
SR1_
MI2
Q1
ENC <1>
VC' <1>
VDD
R
VDD
Q2
SR2
4V
ENC <1:4>
VDD
DQ
CNT <1>
CNT <2>
DQ
CNT <1:2>
DQ
C
C
ENC <3>
ENC <4>
VC' <1:4>
VC' <3>
VDD
DQ
VC' <4>
4-bit Integrator
Encoder
Ripple Counter
VC' <2>
ENC <2>
Delayed Q
MI3
VB2
MC9
ENC
<n+2>
ENC
<n>
MS3
MS2
VIN2
MC3
VIP
MC13
MC14
MC15
MC1
MC6
MC5
MC11
MC12
MS1
VIN1
MC2
MC10
MC17
VCMP
MC16
MC18
MC7
MC8
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6
The four phase triangular waves VC' are not directly usable.
To realize an equivalent operation as shown in Fig. 5, the
voltage comparator used for PWM operation has to be
re-designed. As shown in Fig. 9, an analog multiplexer is
incorporated into the input stage of the comparator, and
transistors MC2 and MC3 are connected to 180 out-of-phase
triangular waves. The multiplexer transistors MS2 and MS3 are
controlled by 180 out-of-phase digital signals ENC <n> and
ENC <n+2>. For the comparator responsible of generating bpwm
<1>, the multiplexer is controlled by ENC <1> and ENC <3> to
sense VC <1> and VC <3>. The comparator responsible of
generating bpwm <2> is controlled by ENC <2> and ENC <4> to
sense VC <2> and VC <4>, the comparator responsible of
generating bpwm <3> is controlled by ENC <3> and ENC <1> to
sense VC <3> and VC <1>, and the comparator responsible of
generating bpwm <4> is controlled by ENC <4> and ENC <2> to
sense VC <2> and VC <4>. The second and third stage of the
comparator consist of transistors MC9 to MC18, which form a
fully differential pair with latched load followed by a
differential to single-ended differential pair. An output inverter
is used to deliver the binary signal to the power stage. In order
to evaluate the impact on the accuracies of DLDPC triangular
wave generator, FFT is applied to bPWM with MATLAB. The
THD of the class-D audio amplifier is evaluated over a wide
range of non-idealities including of triangular wave phase shift
and offset of DC levels in Fig. 10.
B. DLDPC power stage and signal flow
The proposed sequenced gate drive circuit, as shown in
Fig. 11, is used to switch gradually. Delay elements are inserted
between the gate drive of staggered-size power transistors.
When the SR latches are triggered to logic high, the ON signal
propagates from the smallest to the largest transistor. If the
values stored in the SR latches are reset to logic low, the OFF
signal propagates from the largest to the smallest transistors.
The geometric progression on the aspect ratio of the power
transistors is set to 4 to optimize between transition time and
shoot-through current. This approach can avoid THD and EMI
caused by dead-time, and allows a higher switching frequency
of 700-kHz. When the switching frequency is higher, smaller
passive components can be used to implement the filter and to
reduce the overall size of the system at a cost of efficiency.
The power stage and signal flow of the DLDPC circuit is
shown in Fig. 12. The DLDPC generator creates VC' <1:4> and
ENC <1:4> to modulate the output of the integrator VI with the
comparators to generate PWM signals bPWM <1:8>. These
PWM signals are decoded and buffered by drivers to create SW
<1:8>. The power stage is composed of two sets of power
transistors to drive the bridge tied load (BTL). Each set contains
two N-type and P-type MOSFETs, which are used to produce
differential output levels from 0, VDD, VDD, VDD at SPKP
and SPKN to drive the BTL differentially. When all power
MOSFETs are turned off, small power MOSFETs are used to
short SPKN and SPKP, resulting in a voltage near VDD. The
ability to bias the BTL at a voltage of VDD and VDD lowers
switching loss when driving a signal at lower amplitude. This is
evident by inspecting (5) derived from [34].
0278-0046 (c) 2015 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See
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This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI
10.1109/TIE.2015.2448518, IEEE Transactions on Industrial Electronics
[26]
[27]
[28]/[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
VDD (V)
This
work
0.5
CMOS
5
0.18
CMOS
2.7
0.5
CMOS
2.7
0.14
CMOS
5
0.5
CMOS
2.7
0.13
CMOS
2.5-6.6
0.25
CMOS
2.5-5.5
0.14
CMOS
5.3
0.5
CMOS
2.5
0.18
CMOS
3
0.13
CMOS
1.2
0.6
DMOS
12/20
Process (m)
THD (%)
0.01
0.018
0.0012
0.01
0.02
0.025
0.00122
0.015
0.3
0.022
0.008
0.00384
SNR (dB)
PSRR (dB)
@217-Hz
Efficiency (%)
95
92
94
92
94
104
103
100
80
80
87.2
100
88
88
70
80
77/81
93
96
85
65
85
85.5
89
92
89/90
91
93
81
92
77
73
88
Load ()
Max. POUT (W)
@THD+N=1%
fSW (KHz)
32
160
6/4
1.46
1.15
1.4
0.25
2.5
3.1
2.3
8/12
700
320
500
350
450
446
1000
>200
400
1.01
1.49/1.31
2.19
1.44
6.6
0.59
1.6
1.15
20.3
Die size(mm )
Delay
R
Q
Delay
Delay
Delay
Gate
Drive SW
Delay
Delay
1024
Power
Stage
Delay
Vin <->
VDD
Comparators
bPWM <1:8>
Vin <+>
Integrator
VI <-> VI <+>
DLDPC Gen.
VC' <1:4> ENC <1:4>
Power
Stage
4
SPKP
VDD GND
VDD VDD
BTL
SPKN
4
VDD GND
Power
Stage
PSW ,loss
1
Vcross I max trise t fall f SW
(5)
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8
-10
-20
-30
bPWM<1>
dB
-40
bPWM<2>
-50
-60
-70
bPWM<3>
-80
-90
bPWM<4>
10
100
Freq.(Hz)
1000
10000
10
SPKP (filtered)
THD+N(%)
0.1
SPKN (filtered)
SPKP (switching)
0.01
SPKN (switching)
0.2
0.4
0.6
0.8
1.2
1.4
90
80
70
60
50
40
30
20
10
0
1.6
Efficiency(%)
REFERENCES
K.-C. Lee, C.-S. Chae, J.-Y. Jeon, K.-H. Lee, and G-H. Cho, A
high-performance fast switching charge dump assisted class-K* audio
amplifier, IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 6, pp.
1122-1133, June 2010.
[2] S. H. Yu and M. H. Tseng, Use of sliding-mode modulation in switch
mode power amplification, IEEE Trans. Ind. Electron., vol. 55, no. 11,
pp. 40224028, Nov. 2008.
[3] Y.-K. Choi, W.-H. Tak, Y.-Y. Yoon, J.-J. Roh, and J.-S. Koh, A 0.018%
THD+N, 88-dB PSRR PWM class-D amplier for direct battery hookup,
IEEE J. Solid-State Circuits, vol. 41, no. 10, pp. 2291-2300, Oct. 2006.
[4] M. K. Kazimierczuk, RF Power Amplifiers, 2nd. ed., Chichester, UK:
Wiley and Co, 2014, pp. 109.
[5] D. Cartasegna, P. Malcovati, L. Crespiy, K. Leey, L. Murukutlay, and A.
Baschirottoz, An audio 91-dB THD third-order fully-differential class-D
amplifier, in Proc. IEEE European Solid-State Circuit Conf., Sept. 2011,
pp. 91-94.
[6] J. Chen, H. Lin, C. Kung, Y. Hwang, and J. Su, Integrated class-D
amplifier with active current sensing suitable for alternating current
switches, IEEE Trans. Ind. Electron., vol. 55, no. 8, pp. 31413149,
Aug. 2008.
[7] P. Adduci, E. Botti, E. Dallago, and G. Venchi, PWM power audio
amplifier with voltage/current mixed feedback for high efficiency
speakers, IEEE Trans. Ind. Electron., vol. 54, no. 2, pp. 11411149, Apr.
2007.
[8] F. Chierchie, E. E. Paolini, L. Stefanazzi, and A. R. Oliva, Simple
real-time digital PWM implementation for Class-D amplifiers with
distortion-free baseband, IEEE Trans. Ind. Electron., vol. 61, no. 10, pp.
54725479, Oct. 2014.
[9] L. Stefanazzi, F. Chierchie, E. E. Paolini, and A. R. Oliva, Low
distortion switching amplifier with discrete-time click modulation, IEEE
Trans. Ind. Electron., vol. 61, no. 7, pp. 35113518, Jul. 2014.
[10] R. Kirlin, C. Lascu, and A. Trzynadlowski, Shaping the noise spectrum
in power electronic converters, IEEE Trans. Ind. Electron., vol. 58, no.
7, pp. 27802788, Jul. 2011.
[11] E. Dallago, G. De Leo, and G. Sassone, A current-mode power
sigma-delta modulator for audio applications, IEEE Trans. Ind.
Electron., vol. 52, no. 1, pp. 236242, Feb. 2005.
[12] W. Shu and J. S. Chang, THD of closed-loop analog PWM class-D
ampliers, IEEE Trans. Circuits Syst. I, Reg. Papers vol. 55, no. 6, pp.
1769-1777, July 2008.
[1]
Fig. 15. Measured output SPKP and SPKN of the power stage.
Fig. 16. FFT spectrum of 1-kHz sine with 1W output and 8 load.
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This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI
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9
[42] S. C. Li, V. C. C. Lin, K. Nandhasri, and J. Ngarmnil, New
high-efficiency 2.5V/0.45W RWDM class-D audio amp for portable
consumer electronics, IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 52,
no. 9, pp. 17671774, Sep. 2005.
[43] K. Kang, J. Roh, Y. Choi, H. Roh, H. Nam, and S. Lee, Class-D audio
amplifier using 1-bit fourth-order delta-sigma modulation, IEEE Trans.
on Circuits Syst. II, Exp. Briefs, vol. 55, no. 8, pp. 728732, Aug. 2008.
[44] J. Noh, D. Lee, J.-G. Jo, and C. Yoo, A class-D amplifier with pulse code
modulated (PCM) digital input for digital hearing aid, IEEE J.
Solid-State Circuits, vol. 48, no.2, pp. 465472, Feb. 2013.
[45] E. Gaalaas, B. Y. Liu, N. Nishimura, R. Adams, and K. Sweetland,
Integrated stereo class D amplifier, IEEE J. Solid-State Circuits,
vol. 40, no.12, pp. 23882397, Dec. 2005.
Shang-Hsien Yang received the B.S. and M.S.
degrees in electrical engineering from National Sun
Yat-Sen University, Kaohsiung, Taiwan, in 2009 and
2011, respectively. He is currently working toward
the Ph.D. degree at the Institute of Electrical and
Computer Engineering, National Chiao Tung
University, Hsinchu, Taiwan.
From 2008 to 2011, he was with the VLSI Design
Laboratory, National Sun Yat-Sen University. He
joined the Ministry of Foreign Affairs, Taipei,
Taiwan, in 2011, where he served his national services. He is presently a
member of the Mixed Signal and Power Management IC Laboratory at
National Chiao Tung University. His current research interest includes
switching amplifiers and envelope tracking supply modulators for radio
frequency power amplifiers used in 4G LTE applications.
Yuan-Han Yang received the B.S. degree in
electrical engineering from National Cheng Kung
University, Tainan, Taiwan, in 1997, and the M.S.
degree in electrical and computer engineering from
National Chiao-Tung University, Hsinchu, Taiwan,
in 2013.
Since graduation, he joined Macronix Electronics,
Hsinchu, Taiwan, where he worked in the
Mix-Signal Department, and his research areas were
in the field of audio and power electronic
applications, including delta-sigma modulators and class D audio amplifier
circuits. Since 2011, he joined Samsung Electronics in Hsinchu, Taiwan. He
is currently the manager of TDC department, and his research areas are in the
field of display solution.
Ke-Horng Chen (M04SM09) received the B.S.,
M.S., and Ph.D. degrees in electrical engineering
from National Taiwan University, Taipei, Taiwan, in
1994, 1996, and 2003, respectively.
He is currently a Director and Professor of the
Institute of Electrical Control Engineering, National
Chiao Tung University, Hsinchu, Taiwan, where he
organized a Mixed-Signal and Power Management
IC Laboratory. He is the author or coauthor of more
than 200 papers published in journals and conferences, and also holds several
patents. His current research interests include power management ICs,
display algorithm and driver designs of liquid crystal display (LCD) TV,
Wireless Power Transfer, Energy Harvesting circuit designs.
Dr. Chen has served as an Associate Editor of the IEEE TRANSACTIONS
ON POWER ELECTRONICS, IEEE TRANSACTIONS ON CIRCUITS
AND SYSTEMSPART I: REGULAR PAPERS, and IEEE
TRANSACTIONS ON CIRCUITS AND SYSTEMSPART II: EXPRESS
BRIEFS. He serves as the CAS Taipei Sction Chair from 2015. He is the
Technical Program Committee Member, European Solid-State Circuits
Conference (ESSCIRC) (2014 - present). He is on the IEEE Circuits and
Systems (CAS) VLSI Systems and Applications Technical Committee, and
the IEEE CAS Power and Energy Circuits and Systems Technical
Committee.
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This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Citation information: DOI
10.1109/TIE.2015.2448518, IEEE Transactions on Industrial Electronics
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10