IMPORTANT: Besides your calculator and the sheets you use for calculations you are only

allowed to have an A4 sized copy sheet during this exam. Notes, problems and alike are not
permitted. Please submit your copy sheet along with your solutions. You may get your copy
sheet back after your solutions have been graded. Do not forget to write down units!

ELE222E INTRODUCTION TO ELECTRONICS (20748)

Midterm Exam #1  17 March 2008 10.00-12.00
nci LESZ, PhD, Baak BAYURT, MSE

1. Assume you are to create a diode using n- and p-typed doped silicon with the following doping
parameters: ND = 3 1017 /cm3 , and NA = 1015 /cm3.
a. Find the barrier voltage and saturation current for a junction area of 0,1 mm2. (7 points)
b. Calculate the specific conductivities of n- and p-type doped silicon. (6 points)
c. Determine the depletion zone width in unbiased state, when the junction is reverse biased at 3,5
V and when it is forward biased at 0,35 V. (6 points)
d. Calculate the junction capacitances for the cases in (c). (6 points)
10k

Ln = 10 m, Lp = 5 m, n = 1400 cm2/Vs, p = 500 cm2/Vs.

ni = 1.5 1010 1/cm3, q = 1.602 10-19 C, r = 12, o = 8.85 10-12 F/m,
VT = 25 mV.

RC3

T4 T2

T5T5

Vo

Vi
VB= +2V

3. Study DC characteristics of the 3-stage BJT amplifier

circuit on the left for |VBE| = 0,6 V, hFE = 100.

+VCC = +15V

TT1 3

10k
VD

2. Consider the circuit on the right. Study and plot the output voltage
Vo as a function of the input voltage Vi over the range -10V to +10V.
You may assume the diodes are ideal, i.e., VD = 0 V when they are
forward biased. (25 points)

Iref

VZ= +3V

Vo

a. Design a current source like that shown

below that will provide 0,5 mA biasing
current to the differential stage. (10 points)
+VCC = +10V

22k

22k

2k2
R
4
T1

-VEE = -15V

Iref

T2
Iref

Iref

Rref

b. How should RC3 be chosen, such that, waveform

distortion at the output Vo is minimum and symmetrical,
i.e. Vo = 0V? (20 points)

+5 V

+5 V

RS

4. The MOS transistors shown on the right have the

following parameters:
|Vth| = 2 V, nCox(W/L) = pCox(W/L) = 2 mA/V2.
Determine the source resistances, such that, when the
MOS transistors are working in saturation ID = 1 mA.
(20 points)

GOOD LUCK!

500k
RS
-5 V

500k

-5 V

SOLUTIONS:
1. Using Einstein Equation , i.e., D p / n = VT p / n , we find Dp = 12,5 cm2/s and Dn = 35 cm2/s.
a.

N N
VB = VT ln A 2 D
ni

b.

p = q

Dp

Dn
=698 mV; I o = A q ni2
+
= 1,26 pA

L p N D Ln N A

ni2

n + N A p qN A p = 0,08 /( cm)
NA

ni2

n = q N D n +
p qN D n = 67,3 /( cm)
ND

c. unbiased

wdep =

2 o r VB
q

with reverse bias at 3,5 V,

1
1

+
NA ND

wdep =

with forward bias at 0,35 V,

=0,96 m

2 o r (V B + Vbias ) 1
1
= 2,36 m

+
q
N
N
D
A

wdep =

2 o r (VB Vbias ) 1
1

= 0,68 m
+
q
NA ND

11,02 pF , unbiased

A
d. Thus, C = o r
= 4,49 pF , reverse @ 3,5V
w
15,61 pF , forward @ 0,35V
2. The circuit has to be analyzed in three parts. The plot is placed at the bottom.
a. -10 V < Vin < 2 V: Both the regular diode and the Zener diode are forward biased. As they are
ideal, they effectively create electrical shorts. That is,
i. The 10k resistor at the input is directly connected to the output and the 2V power
supply.
ii. Vo = 2 V
b. +5V < Vin < +10 V: Both the regular diode and the Zener diode are reverse biased.
i. the Zener diode is in the Zener zone and 3 V drops across it.
ii. the regular diode is in cut off.
iii. current flows over 10k resistor on the left, the Zener diode and 10k resistor on the
right. Thus

I=

Vi VZ 2V
20k

iv. Vo = 2V + 10k * I . If this current changes linearly, then Vo changes linearly.

c. 2 V < Vin < +5 V: Both the regular diode and the Zener diode are reverse biased, yet, the
Zener diode is not in Zener zone.
i. no current flows over R1, the Zener diode, the regular diode and R2.
Vo = 2 V

Vo
+4,5 V

Vi
-10V

+5V

+10V

3. .
a.

Rref =

VCC VEB1 15V 0,6V

=
= 28k 8 However, we also need to make sure that T2
I ref
0,5mA

operates in the normal operating region, i.e., VC2 < VB2. The current mirror is connected to the
common emitters of T1 and T2. The emitter voltage of the differential stage is
VE = VB + VEB = 0 + 0,6 V = 0,6 V.
On the other hand VB2 = VCC VBE1 = 10v 0,6 V = 9,4 V > 0,6 V.
This satisfies the condition VC2 < VB2.
b. From the loop of 22k resistance connected to the collector of T4, VBE5 and the 2k2 resistor:

22k * ( I C 4 I B 5 ) + V BE 5 + 2k 2 * (1 + hFE 5 ) I B 5 = 0 I C 4 =

I C 5 = hFE 5

I ref
2

hFE
= 0,247 mA
hFE + 1

22k * I C 4 VBE 5
22k * 0,25mA 0,6V
= 1,98mA
= 100
(100 + 1)2k 2 + 22k
(hFE 5 + 1)2k 2 + 22k

Since V0 = +VCC RC 3 * I C 5 = 0V we find RC3 = 7k55 .

Hereby note we did NOT neglect the base currents of the differential stage because hFE is only 100!
4. Lets first take the circuit with NMOS:

ID =
Since
As

n C ox W
2

[VGS Vth ]2 VGS

3V
ID
1mA
= 2V
=

n C ox W
1mA / V 2 1V
2 L
= 3V .

= Vth

VGS Vth for channel creation, VGS

VG = 0V VS = VG VGS = 3V thus RS =

VS (5V )
= 2k
1mA

Now the circuit with PMOS:

ID =
Since
As

p C ox W
2

[VGS Vth ]2 VGS

1V
ID
1mA
= 2V
=
2
n C ox W
1mA / V
3V
2 L
= 3V .

= Vth

VGS Vth for channel creation, VGS

VG = 0V VS = VG VGS = +3V thus RS =

+ 5V 3V
= 2k
1mA