FDS6890A

Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description

Features

These N-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.

7.5 A, 20 V. RDS(ON) = 0.018

@ VGS = 4.5 V

RDS(ON) = 0.022 @ VGS = 2.5 V.

Low gate charge (23nC typical).

Fast switching speed.

Applications

DC/DC converter
Motor drives

High performance trench technology for extremely

low RDS(ON).

High power and current handling capability.

D2
D1

D2

D1

pin 1

SO-8

G1

S2

G2

S1

Absolute Maximum Ratings

Symbol

T A=25 oC unless otherwise noted

Ratings

Units

V DSS

Drain-Source Voltage

Parameter

20

V GSS

Gate-Source Voltage

ID

Drain Current

7.5

PD

Power Dissipation for Dual Operation

- Continuous

(Note 1a)

- Pulsed

20
2.0

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1.0

(Note 1c)

T J, T stg

Operating and Storage Junction Temperature Range

0.9
-55 to +150

Thermal Characteristics
R JA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

C/W

R JC

Thermal Resistance, Junction-to-Case

(Note 1)

40

C/W

90

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape W idth

Quantity

FDS6890A

FDS6890A

13

12mm

2500 units

1999 Fairchild Semiconductor Corporation

FDS6890A Rev. C

FDS6890A

November 1999

Symbol

TA = 25 C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max Units

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
TJ
IDSS

Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

ID = 250 A, Referenced to 25C

VDS = 16 V, VGS = 0 V

IGSSF

Gate-Body Leakage Current,

Forward
Gate-Body Leakage Current,
Reverse

VGS = 8 V, VDS = 0 V

100

nA

VGS = -8 V, VDS = 0 V

-100

nA

IGSSR

On Characteristics

20

V
14

mV/C

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

VGS(th)
TJ
RDS(on)

Gate Threshold Voltage

Temperature Coefficient
Static Drain-Source
On-Resistance

ID = 250 A, Referenced to 25C

-3.5
0.013
0.021
0.016

ID(on)

On-State Drain Current

VGS = 4.5 V, ID =7.5 A

VGS = 4.5 V, ID =7.5 A, TJ =125C
VGS = 2.5 V, ID =6.5 A
VGS = 10 V, VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V, ID = 7.5 A

0.5

0.8

1.5

V
mV/C

0.018
0.034
0.022

20

A
35

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS = 10 V, VGS = 0 V,
f = 1.0 MHz

2130

pF

545

pF

270

pF

(Note 2)

VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6

VDS = 10 V, ID = 7.5 A,
VGS = 4.5 V,

13

24

ns

26

42

ns

65

90

ns

23

37

ns

23

32

nC

3.2

nC

4.4

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward

Voltage

VGS = 0 V, IS = 1.3 A

(Note 2)

0.65

1.3

1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 78 C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.

b) 125 C/W when

mounted on a 0.02 in2
pad of 2 oz. copper.

c) 135 C/W when

mounted on a minimum pad.

Scale 1 : 1 on letter size paper

FDS6890A Rev. C

FDS6890A

Electrical Characteristics

(continued)

1.8

30
VGS=4.5V

2.5V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

ID, DRAIN-SOURCE CURRENT (A)

FDS6890A

Typical Characteristics

2.0V
24

18

1.8V

12

1.5V

VGS =1.8V

1.6

2.0V
1.4
2.5V

1.2

3.0V
3.5V
4.5

0
0

0.5

1.5

2.5

0.8

VDS, DRAIN-SOURCE VOLTAGE (V)

10

15

20

25

30

ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.05

ID = 7.5A
VGS = 4.5V

1.6

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

1.8

1.4
1.2
1
0.8
0.6

ID =3.8A
0.04

0.03
o

TA = 125 C

0.02

TA = 25 C
0.01

0.4
-50

-25

25

50

75

100

125

150

IS, REVERSE DRAIN CURRENT (A)

25 C
o

ID, DRAIN CURRENT (A)

100

TA = -55 C

VDS = 5V

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Figure 3. On-Resistance Variation

withTemperature.

30

VGS, GATE TO SOURCE VOLTAGE (V)

o
TJ, JUNCTION TEMPERATURE ( C)

125 C

24

18

12

VGS=0
10
1

TJ=125 C
o

25 C

0.1

-55 C

0.01
0.001
0.0001

0.5

1.5

2.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6890A Rev. C

(continued)

3200
f = 1 MHz
VGS = 0 V

ID = 7.5A
VDS = 5V

10V
15V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

FDS6890A

Typical Characteristics

2400
CISS
1600

800
COSS
CRSS

0
0

12

18

24

30

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

12

16

20

Figure 8. Capacitance Characteristics.

100

30
RDS(ON) LIMIT

100s
1ms

10

SINGLE PUL SE
RJ A =13 5 C/W
TA = 25 C

25

10ms
POWER (W)

100ms
1s
10s

1
DC
VGS = 10V
SINGLE PULSE
o
RJA = 135 C/W

0.1

20
15
10
5

TA = 25 C
0
0.01

0.01
0.1

10

100

0.1

0.5

10

50 100

300

SINGLE PULSE TIME (SEC)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

r (t), NO RMAL IZED EFFEC TIVE

1
T RANSIENT THERMAL RESISTANCE

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.5
0.2
0.1
0.05
0.02
0.01

D = 0 .5
0 .2

R JA ( t) = r( t) * RJA
R JA = 135 C/W

0 .1
0.0 5

P(p k)
0.0 2
0.0 1

t1

S in g le P ul s e

t2

0.005

TJ - TA = P * RJA (t)

0.002

D u t y C y c l e, D = t1 /t

0.001
0.0 001

0.001

0.01

0.1

10

100

300

t1, TIME (s ec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDS6890A Rev. C

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

HiSeC
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6

ACEx
Bottomless
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO

SuperSOT-8
SyncFET
TinyLogic
UHC
VCX

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. E