2SK3565

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV)

2SK3565
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 2.0 (typ.)

High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

900

Drain-gate voltage (RGS = 20 k)

VDGR

900

Gate-source voltage

VGSS

30

(Note 1)

ID

Pulse (t = 1 ms)
(Note 1)

IDP

15

Drain power dissipation (Tc = 25C)

PD

45

JEDEC

Single pulse avalanche energy

(Note 2)

EAS

595

mJ

JEITA

Avalanche current

IAR

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

-55~150

DC
Drain current

1: Gate
2: Drain
3: Source

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25C(Initial), L = 43.6 mH, IAR = 5.0 A, RG = 25

Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

Start of commercial production

2002-06

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2SK3565
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Gate leakage current

Gate-source breakdown voltage

Test Condition
VGS = 25 V, VDS = 0 V

IGSS

IG =10 A, VDS = 0 V

V (BR) GSS

Drain cut-off current

VDS = 720 V, VGS = 0 V

IDSS

Drain-source breakdown voltage

Min

Typ.

Max

Unit

10

30

100

V (BR) DSS

ID = 10 mA, VGS = 0 V

900

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Gate threshold voltage

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 3 A

2.0

2.5

Forward transfer admittance

Yfs

VDS = 20 V, ID = 3 A

2.0

4.5

Input capacitance

Ciss

1150

Reverse transfer capacitance

Crss

20

Output capacitance

Coss

100

30

70

60

170

28

17

11

Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton
tf

Turn-off time

VOUT

RL =
66.7

50

Switching time
Fall time

ID = 3 A

10 V
VGS
0V

tr

VDD
200 V
Duty 1%, tw = 10 s

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD
400 V, VGS = 10 V, ID = 5 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

Pulse drain reverse current

IDRP

15

(Note 1)

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 5 A, VGS = 0 V,

900

ns

Qrr

dIDR/dt = 100 A/s

5.4

Reverse recovery charge

Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

K3565

Please contact your TOSHIBA sales representative for details as to

Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
Lot No.
and of the Council of 8 June 2011 on the restriction of the use of
Note 4
certain hazardous substances in electrical and electronic equipment.

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2SK3565

ID VDS

ID VDS
8

5.5

5.25

10

(A)

COMMON
SOURCE
Tc = 25C
PULSE TEST

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

3
5
2
4.75
1

0
0

VGS = 4.5 V

12

16

DRAIN-SOURCE VOLTAGE

20

VDS

COMMON
SOURCE
Tc = 25C
PULSE TEST

5.5
5.25

3
5
2

4.75

(V)

VGS = 4 .5V

10

ID VGS
VDS (V)

PULSE TEST

DRAIN-SOURCE VOLTAGE

(A)
DRAIN CURRENT ID

VDS = 20 V

4
Tc = 55C
100
25
0
0

GATE-SOURCE VOLTAGE

VGS

10

(V)

COMMON SOURCE
Tc = 25
14

PULSE TEST

ID = 5 A

12

1.5

0
0

12

16

GATE-SOURCE VOLTAGE

Yfs ID

VGS

20

(V)

RDS (ON) ID
10

Tc = 55C
25
100
1

COMMON SOURCE
VDS = 20 V
PULSE TEST
1

DRAIN CURRENT ID

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()

FORWARD TRANSFER ADMITTANCE

Yfs (S)

VDS

20

(V)

10

0.1
0.1

30

VDS VGS

COMMON SOURCE

20

DRAIN-SOURCE VOLTAGE

10

0
0

24

10

10

(A)

COMMON SOURCE
Tc = 25C
PULSE TEST

VGS = 10 V15V

1
0.01

0.1

DRAIN CURRENT ID

10

(A)

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2SK3565

RDS (ON) Tc

IDR VDS
10
COMMON SOURCE

COMMON SOURCE
PULSE TEST

DRAIN REVERSE CURRENT

IDR (A)

ID = 5A
3

4
1.5

VGS = 10 V
2

0
80

40

40

80

CASE TEMPERATURE

120

Tc

Tc = 25C

PULSE TEST
3

1
0.5
0.3

10

1
3

0.1
0

160

(C)

VGS = 0, 1 V

0.4

0.8

DRAIN-SOURCE VOLTAGE

CAPACITANCE VDS

GATE THRESHOLD VOLTAGE

Vth (V)

Ciss

(pF)

(V)

1000

Coss

100
COMMON SOURCE
VGS = 0 V

Crss

Tc = 25C
1

10

DRAIN-SOURCE VOLTAGE

30 50

VDS

2
COMMON SOURCE
VDS = 10 V

ID = 1 mA
PULSE TEST
0
80

100

(V)

VDS (V)
DRAIN-SOURCE VOLTAGE

80

60

40

20

120

CASE TEMPERATURE

40

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

100

80

CASE TEMPERATURE

PD Tc

40

40

160

Tc

20

500

400

(C)

VDD = 100 V

300
200

VGS

200

8
COMMON SOURCE
ID = 5 A

100

Tc = 25C
PULSE TEST

0
10

20

TOTAL GATE CHARGE

12

400

200

16

VDS

30

Qg

(V)

10
0.1

VGS

C
CAPACITANCE

VDS

f = 1 MHz

DRAIN POWER DISSIPATION

PD (W)

1.6

Vth Tc

10000

0
0

1.2

GATE-SOURCE VOLTAGE

DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( )

10

40

(nC)

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2SK3565

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty=0.5
0.2
0.1

0.1

0.05
PDM

0.02

SINGLE PULSE

0.01

0.01

Duty = t/T
Rth (ch-c) = 2.78C/W
1.25C/W
0.001
10

100

10

PULSE WIDTH

100

tw (s)

SAFE OPERATING AREA

EAS Tch

100

1000

(A)
DRAIN CURRENT ID

AVALANCHE ENERGY
EAS (mJ)

ID max (PULSED) *
10

100 s *

ID max (CONTINUOUS) *
1 ms *

0.1

10

DC OPERATION
Tc = 25C

SINGLE NONREPETITIVE PULSE

800

600

400

200

Tc=25
CURVES
LINEARLY

0.01
1

MUST
WITH

BE

DERATED

INCREASE

IN

VDSS max

TEMPERATURE.

10

100

1000

VDS

0
25

10000

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

(V)

15 V

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 43.6mH

VDS

WAVE FORM

AS =

1
B VDSS

L I2
B

V
VDSS
DD

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2SK3565
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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