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Brook Abegaz
The PN Junction
Chapter 4: we considered the semiconductor in
The PN Junction
Chapter 6: we discussed the behavior of non-
The PN Junction
Previous Chapters: We considered the nonequilibrium condition in which excess electrons
and holes are present in the semiconductor.
Chapter 7: We now wish to consider the
situation in which a p-type and an n-type
semiconductor are brought into contact with one
another to form a PN junction.
The PN Junction
Most semiconductor devices contain at least one
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space charge region width, the electric field, and the potential
through the depletion region where no currents exist and no
external excitation is applied are studied.
Assuming no voltage is applied across the PN junction, then
the junction is in thermal equilibrium and the Fermi energy
level is constant.
The conduction and valance band energies must bend as we go
through the space charge region, since the relative position of
the conduction and valence bands with respect to the Fermi
energy changes between p and n regions.
Electrons in the conduction band of the n region see a
potential barrier in trying to move into the conduction band of
the p region. This barrier is the built-in potential barrier and
is denoted by Vbi.
The potential Vbi maintains equilibrium, therefore no current is
produced by this voltage.
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kT
( E F E Fi )
n0 ni exp
kT
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( e Fn )
n0 ni exp
kT
Fn
kT N d
ln
e
ni
( e Fp )
n0 ni exp
kT
Fp
kT N a
ln
e
ni
NaNd
kT
|
ln
2
e
n
i
NaNd
V t ln
2
n
i
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Electric field
Electric field is created in the depletion region by
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Electric field
The electric field is determined from Poisson's equation which, for a one
d 2 ( x ) ( x )
dE ( x )
2
dx
s
dx
where (x) is the electric potential, E(x) is the electric field, (x) is the volume charge
density, and s is the permittivity of the semiconductor. The charge densities are:
( x ) eN a : x p x 0 ( x ) eN d : 0 x xn
The electric field in the p region is found by integrating Poissons eqn:
eN a
( x)
eN a
eN a
dx
dx
x C1
(x xp )
s
s
s
s
The electric field is zero in the neutral p region for x < -xp. As there are
eN d
( x)
eN d
eN d
dx
dx
x C1
( xn x )
s
s
s
s
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Electric field
The electric field is also continuous at the metallurgical junction, or
at x = 0 therefore: N x N x
a p
d n
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2 sVbi N a
1
xn
N N
e
N
d
a
d
2 sVbi N d
1
xp
N N
e
N
a
a
d
1
2
1
2
2 sVbi N a N d
W
N .N
e
a d
1
2
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Exercise
1. Calculate Vbi in a Silicon PN junction at T =
NaNd
kT
|
ln
2
e
n
i
NaNd
V t ln
2
n
i
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Solution
NaNd
Vbi Vt ln
2
n
i
Vbi(V)
Na =1015cm3
0.575V
Na =1016cm3
0.635
Na =1017cm3
0.695
Na =1018cm3
0.754
ForNd =1018cm3
Vbi(V)
Na =1015cm3
0.754V
Na =1016cm3
0.814
Na =1017cm3
0.874
Na =1018cm3
0.933
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V bi | Fn | | Fp
Exercise
NaNd
kT
|
ln
2
e
n
i
NaNd
V t ln
2
n
i
2 sVbi N a N d
W
N .N
e
a d
1
2
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Solution
(a)
16
2
x
10
nside E F E Fi ( 0.0259 ) ln
0.3653 eV
10
1.5 x10
p-side,
2 x1016
0.3653 eV
E Fi E F ( 0 .0259 ) ln
10
1.5 x10
b)
c)
NaNd
Vbi Vt ln
2
n
i
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( 2 x1016 )( 2 x1016 )
0.7305V
( 0.0259 ) ln
10
2
(1 .5 x10 )
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Solution
d)
2 (11 .7 )( 8 .85 x10 14 )( 0.7305 ) 2 x1016
1
xn
16
16
16
19
1.6 x10
2 x10 2 x10 2 x10
1
2
x n x p 0.154 m
| E max |
eN d x n
4.76 x10
14
cm
(11 .7 )( 8.85 x10 )
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Vtotal | Fn | | Fp | VR
Vtotal Vbi VR
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Fig. 7.5: Energy band diagram of a PN Junction under reverse and forward bias
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e
N
N
a
d
E max
2 e (Vbi V R ) N a N d
s
Na Nd
E max
2 (Vbi V R )
1
2
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Junction Capacitance
Since we have a separation of positive and negative
dQ ' eN d dx n eN a dx p
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Junction Capacitance
The differential charge dQ' is in units of C/cm2 so that
1
xn
e
N d N a N d
1
2
dV R
eN d
dV R
e s N a N d
C
2
(
V
V
)(
N
N
)
bi
R
a
d
'
1
2
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Junction Capacitance
Comparing the following two equations:
2 s (Vbi V R ) N a N d
e
N
N
a
d
1
2
e s N a N d
C
2
(
V
V
)(
N
N
)
R
a
d
bi
'
1
2
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Exercise
3. Consider a Silicon PN Junction at T = 300K
e
N
N
a
d
V bi | Fn | | Fp
NaNd
kT
|
ln
2
e
n
i
1
2
NaNd
V t ln
2
n
i
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Solution
e
N
N
a
d
1
2
W
16
19
15
1 .6 * 10
(10 )(10 )
1
2
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uniformly
doped
n-type
semiconductor, if we diffuse acceptor atoms
through the surface, the impurity concentrations
will tend to be like those shown in the Figure.
The depletion region extends into the p and n
regions from the metallurgical junction.
The net p-type doping concentration near the
metallurgical junction may be approximated as a
linear function of distance from the metallurgical
junction.
N d N a ax
36
---------------N-region-------------
Nd
Na
Surface
X = X
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N-region
+
-X0
X=0
-
X0
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E
dx
( x x02 )
2 s
s
s
s
dx
The electric field in the linearly graded junction is a quadratic
function of distance. The maximum electric field occurs at the
metallurgical junction. The electric field is zero at both x = +x0 and
at x = -x0, The electric field in a non-uniformly doped
semiconductor is not exactly zero, but the magnitude of this field
is small therefore E = 0 in the bulk regions.
The potential is again found by integrating the electric field as:
( x) Edx
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ea x 3
ea 3 2 eax 03
2
x0
Vbi
( x)
( x0 x )
2 s 3
3 s
3 s
The magnitude of the potential at x = + x0 will equal the built-in potential
barrier for this function. Another expression for the built-in potential barrier
is:
ax
V bi V t ln( 0 ) 2
ni
x0 { . s (Vbi V R )}
2 ea
The junction capacitance per unit area can be determined by the same method
as we used for the uniformly doped junction. The junction capacitance is then:
1
ea s2
'
3
C {
12 (V bi V R )
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P-region
+dQ=(x0)dx0 = eax0dx0
N-region
dx0
+
-X0
X=0
-
X0
dx0
-dQ
Fig. 7.8: Differential change in space charge width with a differential change in
reverse-bias voltage for a linearly graded PN Junction.
Note that C' is proportional to (Vbi + VR)-1/3 for the linearly graded junction as compared to
C'(Vbi + VR)-1/2 for the uniformly doped junction. In the linearly graded junction, the
capacitance is less dependent on reverse-bias voltage than in the uniformly doped junction.
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Hyper-abrupt Junctions
The uniformly doped junction and linearly graded junction
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Hyper-abrupt Junctions
N-type
doping
profiles
m=+3
m=-3
m=+2
m=-2
m=+1
m=-1
m=0
Bx0m
x=0
x0
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Hyper-abrupt Junctions
The junction capacitance can be derived using the same analysis method as before and
is given as:
1
eB s( m 1)
C {
} (m2)
( m 2 )(Vbi V R )
'
fr
2 LC
C C 0 (Vbi V R )
(m2)
1
2
m2
3
2
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Picture Credits
Semiconductor Physics and Devices, Donald Neaman, 4th
of Cambridge, 2013.
http://www.doitpoms.ac.uk/tlplib/semiconductors/pn.php
University, 2011.
http://wanda.fiu.edu/teaching/courses/Modern_lab_manual/pn_junction.html
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