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MICROELECTRONICS CORP.
HMJE13001
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HMJE13001 is a medium power transistor designed for use in switching
applications.
TO-92
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
IC=100uA
BVCEO
400
IC=10mA
BVEBO
IE=10uA
ICBO
10
uA
VCB=550V
ICEO
10
uA
VCB=400V
IEBO
10
uA
VEB=6V
*VCE(sat)1
400
mV
IC=50mA, IB=10mA
*VCE(sat)2
750
mV
IC=100mA, IB=20mA
*VBE(sat)
IC=50mA, IB=10mA
*hFE1
VCE=10V, IC=10mA
*hFE2
10
36
VCE=10V, IC=50mA
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMJE13001
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
100000
VCE(sat) @ IC=5IB
75 C
o
125 C
hFE
25 C
10
10000
1000
75 C
o
125 C
100
25 C
hFE @ VCE=10V
10
1
0.1
10
100
0.1
1000
10
100
1000
Power Derating
1000
1200
o
25 C
125 C
PD(mW),Power Dissipation
1000
75 C
VBE(sat) @ IC=5IB
800
600
400
200
100
0.1
10
100
1000
20
40
60
80
100
120
140
160
PT=1mS
0.1
PT=100mS
PT=1S
0.01
1
10
100
1000
HMJE13001
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
B
1
DIM
A
B
C
D
E
F
G
H
I
1
2
3
Marking:
H MJ E
1 3 0 0 1
3
Control Code
Date Code
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Min.
4.33
4.33
12.70
0.36
3.36
0.36
-
Max.
4.83
4.83
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5
*2
*2
*: Typical, Unit: mm
I
E
F
H2
H2A H2A
H2
D2
H3
H4 H
L
L1
H1
W1
W
D1
F1F2
T2
T
T1
P1
P
P2
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMCs Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Pb-Free Assembly
<3 C/sec
<3oC/sec
100oC
150oC
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Preheat
60~150 sec
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C 5 C
5sec 1sec
HMJE13001
260 C +0/-5 C
5sec 1sec