APM4500

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features

N-Channel
20V/8A ,

Pin Description

RDS(ON)=22m(typ.) @ VGS=4.5V
RDS(ON)=30m(typ.) @ VGS=2.5V

P-Channel

S1

D1

G1

D1

S2

D2

G2

D2

-20V/-4.3A , RDS(ON)=80m(typ.) @ VGS=-4.5V

RDS(ON)=105m(typ.) @ VGS=-2.5V

SO-8

Super High Dense Cell Design for Extremely Low

D1

RDS(ON)

D1

S2

Reliable and Rugged

SO-8 Package

G2
G1

Applications
S1

N-Channel MOSFET

Power Management in Notebook Computer ,

D2

D2

P-Channel MOSFET

Portable Equipment and Battery Powered

Systems.

Ordering and Marking Information

APM4500

Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150C
Handling Code
TR : Tape & Reel

Handling Code
Temp. Range
Package Code

APM4500 K :

APM4500
XXXXX

XXXXX - Date Code

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003

www.anpec.com.tw

APM4500
Absolute Maximum Ratings
Symbol

(TA = 25C unless otherwise noted)

Parameter

N-Channel

P-Channel

VDSS

Drain-Source Voltage

20

-20

VGSS

Gate-Source Voltage

12

12

ID*

Maximum Drain Current Continuous

-4.3

IDM

Maximum Drain Current Pulsed

35

-17

PD

Maximum Power Dissipation

TA=25C

2.5

2.5

TA=100C

1.0

1.0

TJ

Maximum Junction Temperature

TSTG

Storage Temperature Range

RjA

Thermal Resistance Junction to Ambient

Unit
V
A
W

150

-55 to 150

62.5

C/W

* Surface Mounted on FR4 Board, t 10 sec.

Electrical Characteristics
Symbol

Parameter

(TA = 25C unless otherwise noted)

APM4500
Unit
Min. Typ. Max.

Test Condition

Static
BVDSS

Drain-Source Breakdown
Voltage

IDSS

Zero Gate Voltage Drain

Current

VGS(th)

Gate Threshold Voltage

IGSS

Gate Leakage Current

N-Ch
VGS=0V , IDS=250A

20

P-Ch

-20

VDS=16V , VGS=0V

N-Ch

VDS=-16V , VGS=0V

P-Ch

-1

VDS=VGS , IDS=250A

N-Ch

VDS=VGS , IDS=-250A

P-Ch -0.45

VGS=12V , VDS=0V

N-Ch

100

VGS=12V , VDS=0V

P-Ch

100

VGS=4.5V , IDS=8A
RDS(ON)a

Drain-Source On-state

VGS=2.5V , IDS=5.2A

Resistance

VGS=-4.5V , IDS=-4.3A
VGS=-2.5V , IDS=-2A

VSDa

Diode Forward Voltage

N-Ch
P-Ch

0.5

0.7

A
V

-1

22

26

30

36

80

90

105

115

ISD=1.7A , VGS=0V

N-Ch

0.8

1.3

ISD=-1.25A , VGS=0V

P-Ch

-0.7

-1.3

nA

Notes
a

: Pulse test ; pulse width 300s, duty cycle 2%

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

www.anpec.com.tw

APM4500
Electrical Characteristics (Cont.)
Symbol

Parameter

(TA = 25C unless otherwise noted)

APM4500
Unit
Min. Typ. Max.

Test Condition

Dynamicb
Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

td(ON)

Turn-on Delay Time

Tr

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Tf

Turn-off Fall Time

Ciss

Input Capacitance

N-Channel

N-Ch

10

13

VDS=10V , IDS= 8A

P-Ch

12

VGS=4.5V

N-Ch

P-Channel

P-Ch

VDS=-10V , IDS=-3A

N-Ch

2.5

VGS=-4.5V

P-Ch

N-Channel

N-Ch

16

32

VDD=10V , IDS=1A ,

P-Ch

13

21.5

VGEN =4.5V , RG=0.2

N-Ch

40

75

P-Ch

36

56

P-Channel

N-Ch

42

78

VDD=-10V , IDS=-1A ,

P-Ch

45

69.5

VGEN =-4.5V , RG=6

N-Ch

20

35

P-Ch

37

57.5

N-Ch

675

P-Ch

510

N-Ch

178

P-Ch

270

N-Ch

105

P-Ch

120

VGS=0V
Coss

Output Capacitance

VDS=15V
Frequency=1.0MHz

Crss

Reverse Transfer Capacitance

nC

ns

pF

Notes
b

: Guaranteed by design, not subject to production testing

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

www.anpec.com.tw

APM4500
Typical Characteristics
N-Channel MOSFET
Output Characteristics

Transfer Characteristics

20

20
VGS=3,4,5,6,7,8,9,10V

ID-Drain Current (A)

ID-Drain Current (A)

VGS=2.5V

16

12

VGS=2V

16

12

TJ=125C

TJ=-55C

TJ=25C

VGS=1.5V

0
0.0

VDS - Drain-to-Source Voltage (V)

0.5

1.0

1.5

2.0

2.5

VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

On-Resistance vs. Drain Current

1.50

0.06

RDS(ON)-On-Resistance ()

VGS(th)-Threshold Voltage (V)

(Normalized)

IDS=250A

1.25
1.00
0.75
0.50
0.25
0.00
-50

-25

25

50

75

0.04
VGS=2.5V

0.03
VGS=4.5V

0.02
0.01
0.00

100 125 150

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

0.05

10

ID - Drain Current (A)

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APM4500
Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

0.10

2.00

ID=8A

RDS(ON)-On-Resistance ()
(Normalized)

0.09

RDS(ON)-On-Resistance ()

On-Resistance vs. Junction Temperature

0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00

VGS=4.5V
ID=8A

1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50

10

VGS - Gate-to-Source Voltage (V)

-25

50

75

100 125 150

TJ - Junction Temperature (C)

Gate Charge

Capacitance

10

1000

VDS=10V
ID=1A

Frequency=1MHz

800

Capacitance (pF)

VGS-Gate-Source Voltage (V)

25

Ciss

600

400

200

Coss
Crss

12

16

20

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

12

16

20

VDS - Drain-to-Source Voltage (V)

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APM4500
Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

Single Pulse Power

20

60

48

TJ=150C

Power (W)

IS-Source Current (A)

10

TJ=25C

36

24

12

0.1
0.0

0.2

0.4

0.6

0.8

1.0

1.2

0
0.01

1.4

0.1

VSD -Source-to-Drain Voltage (V)

10

100

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient
Thermal Impedance

2
1

Duty Cycle = 0.5

D= 0.2
D= 0.1

0.1

D= 0.05

D= 0.02

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=62.5C/W
3.T JM -T A =P DM Z thJA
4.Surface Mounted

SINGLE PULSE

0.01
1E-4

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

www.anpec.com.tw

APM4500
Typical Characteristics
P-Channel MOSFET
Output Characteristics

Transfer Characteristics

10

10
-VGS=2V

-ID-Drain Current (A)

-ID-Drain Current (A)

-VGS=3,4.5,6,7,8V

4
-VGS=1.5V

4
TJ=25C
TJ=-55C

TJ=125C

-VGS=1V

0
0.0

10

0.5

-VDS - Drain-to-Source Voltage (V)

1.0

1.5

2.0

2.5

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

On-Resistance vs. Drain Current

0.16

1.50
1.25

RDS(ON)-On-Resistance ()

-VGS(th)-Threshold Voltage (V)

(Normalized)

-IDS=250A

1.00
0.75
0.50
0.25
0.00
-50

-25

25

50

75

0.12

-VGS=2.5V

0.10
-VGS=4.5V

0.08
0.06
0.04
0.02

100 125 150

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

0.14

10

-ID - Drain Current (A)

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APM4500
Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage

2.0

-ID=4.3A

0.18

RDS(ON)-On-Resistance ()
(Normalized)

RDS(ON)-On-Resistance ()

0.20

On-Resistance vs. Junction Temperature

0.16
0.14
0.12
0.10
0.08
0.06
0.04

-VGS=4.5V
-ID=4.3A

1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4

0.2
-50

-VGS - Gate-to-Source Voltage (V)

-25

75

100 125 150

Capacitance
800

-VDS=10V
-ID=3A

Frequency=1MHz

700

Capacitance (pF)

-VGS-Gate-Source Voltage (V)

50

TJ - Junction Temperature (C)

Gate Charge
5

25

600
Ciss

500
400
Coss

300

1
200
0

100

10

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

Crss

10

15

20

-VDS - Drain-to-Source Voltage (V)

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APM4500
Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage

Single Pulse Power

10

14

-IS-Source Current (A)

12

TJ=150C

Power (W)

10

TJ=25C

8
6
4
2

1
0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0
0.01

1.6

0.1

-VSD -Source-to-Drain Voltage (V)

10

100

Time (sec)

Normalized Effective Transient

Thermal Impedance

Normalized Thermal Transient Impedence, Junction to Ambient

1
Duty Cycle=0.5

D=0.2
D=0.1

0.1

D=0.05
D=0.02

D=0.01

0.01
1E-4

1.Duty Cycle, D=t1/t2

2.Per Unit Base=R thJA=62.5C/W
3.T JM-T A=P DMZ thJA
SINGLE PULSE

1E-3

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

www.anpec.com.tw

APM4500
Packaging Information

e1

0.015X45

SOP-8 pin ( Reference JEDEC Registration MS-012)

e2
D

A1

1
L

0.004max.

Dim

Mi ll im et er s

Inche s

Min .
1. 35

Max .
1. 75

Min.
0. 053

Max .
0. 069

A1
D
E

0. 10
4. 80
3. 80

0. 25
5. 00
4. 00

0. 004
0. 189
0. 150

0. 010
0. 197
0. 157

H
L
e1
e2

5. 80
0. 40
0. 33

6. 20
1. 27
0. 51

0. 228
0. 016
0. 013

0. 244
0. 050
0. 020

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

1. 27B S C

0. 50B S C

10

www.anpec.com.tw

APM4500
Physical Specifications
Terminal Material
Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

temperature

Reference JEDEC Standard J-STD-020A APRIL 1999

Peak temperature

183C
Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/
Convection
Average ramp-up rate(183C to Peak)
3C/second max.
120 seconds max
Preheat temperature 125 25C)
60 150 seconds
Temperature maintained above 183C
Time within 5C of actual peak temperature 10 20 seconds
Peak temperature range
220 +5/-0C or 235 +5/-0C
Ramp-down rate
6 C /second max.
6 minutes max.
Time 25C to peak temperature

VPR
10 C /second max.
60 seconds
215-219C or 235 +5/-0C
10 C /second max.

Package Reflow Conditions

pkg. thickness 2.5mm
and all bgas
Convection 220 +5/-0 C
VPR 215-219 C
IR/Convection 220 +5/-0 C

pkg. thickness < 2.5mm and

pkg. volume 350 mm

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

11

pkg. thickness < 2.5mm and pkg.

volume < 350mm
Convection 235 +5/-0 C
VPR 235 +5/-0 C
IR/Convection 235 +5/-0 C
www.anpec.com.tw

APM4500
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST

Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9

Description
245C,5 SEC
1000 Hrs Bias @ 125C
168 Hrs, 100% RH, 121C
-65C ~ 150C, 200 Cycles

Carrier Tape & Reel Dimensions

D

Po

P1

Bo

Ao

D1

Ko
T2

J
C
A

T1

Application

SOP- 8

330 1
F
5.5 1

T1

T2

62 +1.5

C
12.75+
0.15

2 0.5

12.4 0.2

2 0.2

12 0. 3

8 0.1

1.750.1

D1

Po

P1

Ao

Bo

Ko

2.0 0.1

6.4 0.1

5.2 0. 1

1.55 +0.1 1.55+ 0.25 4.0 0.1

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

12

2.1 0.1 0.30.013

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APM4500
Cover Tape Dimensions
Application
SOP- 8

Carrier Width
12

Cover Tape Width

9.3

Devices Per Reel

2500

Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright ANPEC Electronics Corp.

Rev. A.2 - May., 2003

13

www.anpec.com.tw

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