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Diodes
zApplications
General rectification
(Common cathode dual chip)
zStructure
4.50.3
0.1
2.80.2
0.1
5.00.2
8.00.2
12.00.2
zFeatures
1) Small power mold type.
(PMDU)
2) Low IR
3) High reliability
13.5MIN
1.2
1.3
zConstruction
Silicon epitaxial planar
15.00.4
0.2
8.0
10.00.3
0.1
0.8
(1) (2) (3)
0.70.1
0.05
2.60.5
ROHM : O220FN
Manufacture Date
Limits
Symbol
VRM
90
VR
90
20
Io
IFSM
100
150
Tj
-40 to +150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=110
Forward characteristics
Reverse characteristics
Thermal impedance
VF
IR
jc
Min.
-
Typ.
-
Max.
0.75
400
1.75
Unit
V
A
/W
Unit
V
V
A
A
Conditions
IF=10A
VR=90V
junction to case
Rev.C
1/3
RB215T-90
Diodes
zElectrical characteristic curves
Ta=125
1
Ta=75
0.1
Ta=150
100000
Ta=125
Ta=-25
Ta=25
10000
Ta=75
Ta=25
100
10
Ta=-25
1
1000
100
10
0.1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
10 20 30 40 50 60 70 80 90
300
700
690
AVE:692.7mV
680
30
1300
Ta=25
VR=90V
n=30pcs
250
200
150
100
AVE:46.0uA
50
1290
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
Ta=25
IF=10A
n=30pcs
710
10
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
720
Ta=25
f=1MHz
VR=0V
n=10pcs
1280
1270
1260
1250
1240
AVE:1257.3pF
1230
1220
1210
1200
670
VF DISPERSION MAP
Ct DISPERSION MAP
IR DISPERSION MAP
1000
1cyc
Ifsm
250
200
30
8.3ms
150
AVE:168.0A
100
50
0
25
20
AVE:21.6ns
Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
15
10
5
PEAK SURGE
FORWARD CURRENT:IFSM(A)
300
100
10
Ifsm
8.3ms 8.3ms
1cyc
1
IFSM DISPERSION MAP
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
100
10
1
10
TIME:t(s)
IFSM-t CHARACTERISTICS
100
50
IM=100mA
IF=10A
DC
40
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Ifsm
10
1ms
time
Rth(j-a)
300us
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
FORWARD VOLTAGE:VF(mV)
f=1MHz
1000
0.01
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=150
10
1000000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
100
D=1/2
30
Sin(180)
20
10
0.1
0.001
0
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
Rev.C
50
2/3
RB215T-90
Diodes
60
60
20
DC
D=1/2
10
Sin(180)
0A
0V
50
40
D=1/2
DC
t
T
VR
D=t/T
VR=45V
Tj=150
30
20
10
Sin(180)
0
0
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
Io
0A
0V
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
30
50
DC
40
D=1/2
T
VR
D=t/T
VR=45V
Tj=150
30
20
Sin(180)
10
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
150
25
50
75
100
125
150
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
No Break at 30kV
25
20
15
10
5
0
AVE:11.6kV
C=200pF
R=0
C=100pF
R=1.5k
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0