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Part 1
Focus on the Plasma and Ion Energy Control
Jim McVittie
<mcvittie@stanford.edu>
Stanford Nanofabrication Facility
Stanford University
2008 NNIN Etch Workshop
Outline
Etcher Overview
RF Plasma
Why we use RF excited plasmas
The Capacitive Coupled Plasma (CCP)
How the rf current across sheath leads the DC bias
Why controlling DC bias is important for etching
Use of Inductive coupled plasmas (ICP) as low bias source
Use of ICP with CCP to control DC bias (Ion Energy)
Beyond simple DC biasing for ion energy control
RF Power
Electrons gain energy from RF or w fields
Electrons impact with feed gas to generate ions, reactive neutrals and more
electrons
Ions and reactive neutrals diffuse and drift to wafer surface where they remove
and deposit material
3
Spontaneous (Chemical)
Etching
Physical Etching
(Sputtering)
Ion Directionality
V
Sheath
Wafer
Position
High Density
Inductive Coupled
ICP Type
Downstream
Plasma
Plasma stop
Reactive
Neutral
Etch Product
Wafer
Rf Bias
Why We Use RF
DC plasmas
Wafer Damage
Glow or Plasma
Region
13.5 MHz
Sheaths
Wafer
Matching
Network
Driven electrode
Gas In
To pump
Quasi-neutral gas -- ni+ = ne- + ni pos ions ni+ , neg ions ni- , electrons ne ni- can not make it to wafer -- often can be neglected
Only weak E fields < 10 V/cm
Te/2
d iz
Energy,
Te ~ 4 5 eV
10
Sheath Region
Electron depletion region forms at all surfaces to
keep electrons in plasma region (ni+ >> ne-)
Dark -- Few electrons
no excited species
no light
Pos Charge
High E field (up to a few KV/cm )
Most electrons returned to plasma
Few percent make it across
RF current carried by
displacement (capacitor) current
Plasma
Ions
+
electrons
Sheath
CCP Currents
E
Ions
+
Irf
Je
-
Ji
Plasma
electrons
Sheath
Irf
Plasma Region
Small E field
Quasi neutral
ni+ = ne e- lighter & faster
ve ~ 100x vi
e- carries current
Jrf = Je >> Ji
Sheath Regions
JDisp
Sheath
osc
J is current density
Oscillating RF Sheath
ns
no=ni=ne
ni=ne
ni
Plasma
Have neglected
pre-sheath region
0
ne~ 0
electrode
+
ne(t) + + + n + + + e+
Sm X
S(t)
13
RF Sheath Analysis
After Lieberman
Analysis gives
s = J ns
d 2V / dx 2
DC Sheath voltage
= e(n ( x) n ( x)) /
i
Vs 1.3 J o e o 2 ns
ni
+ +
+ ++
ne
0
14
J rf = I rf / A
V(t)
S2
J rf 1 < J rf 2
S1
Vs1 < Vs 2
Vp
0
V dc
Self Bias
Vdc = Vs1 Vs 2 Vs 2
Vrf
Swing
Vdc 1.3 I rf e o 2 ns A2
15
ICP Configurations
RF for plasma generat
Substrate
Chamber
RF bias
Ion Directionality
+ Ti Ions enters sheath with transverse energy of Ti
Plasma
Sheath
+
Vsh
-
E
+
Wafer
Free-fall
Collisional
At 13.6 MHz most ions respond only to the average (DC) sheath
field
Ions gain directionality and energy crossing the sheath
+
Ion directionality strongly affects
Etch bow (side wall etching)
Electron shading type charging
++
19
Vs
= tan 1
Direction of
mean ion
T
i
eV
s
IAD
Ti
0.5 eV
4.0
Sheath voltage control is essential for etch control
20
For Ar @ 1 mT
Vsdc = 27V
Te = 5eV
Ti = 0.5ev
ne = 1 x 1011
Vsdc = 100V
Te = 2eV
Ti = 0.05ev
ne = 5 x 109
50 MHz
25 MHz
10 MHz
5 MHz
2.5 MHz
1.0 MHz
0.5 MHz
50 MHz
25 MHz
10 MHz
5 MHz
2.5 MHz
1.0 MHz
0.5 MHz
For an oscillating rf sheath, the ion energy distribution (IED) at wafer surface
depends strongly on sheath transit effect
IED tends to be bimodal with ion decreasing with increasing RF frequency
IED strongly affected by ion mass, sheath thickness, and Vsheath waveform
IED can strongly affect etch profile
Higher energy ions will have smaller Ion Angular Distribution (IAD)
21
22
low Vp
23
13 MHz only
13 MHz/2 MHz
13 MHz only
13 MHz/2 MHz
24
Summary
DC self bias is a result of rf current flowing across a plasma sheath
Increases with rf current and decreases with rf frequency
RF biasing applied to wafer to control Ei in high density plasma systems
Biasing is needed for controlled anisotropic etching
Recent etch equipment designs go beyond simple DC biasing to shape
energy distribution of ions bombarding wafer surface to better control
etch characteristics
25