IRF630, SiHF630

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Dynamic dV/dt Rating

200

RDS(on) ()

VGS = 10 V

Repetitive Avalanche Rated

0.40

Qg (Max.) (nC)

43

Fast Switching

Qgs (nC)

7.0

Ease of Paralleling

23

Simple Drive Requirements

Qgd (nC)
Configuration

Single

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

TO-220AB

COMPLIANT

Compliant to RoHS Directive 2002/95/EC

D

Available

RoHS*

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF630PbF
SiHF630-E3
IRF630
SiHF630

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

200

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID
IDM

Linear Derating Factor

UNIT
V

9.0
5.7

36
0.59

W/C

EAS

250

mJ

Currenta

IAR

9.0

Repetitive Avalanche Energya

EAR

7.4

mJ

Single Pulse Avalanche Energyb

Repetitive Avalanche

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

74

dV/dt

5.0

V/ns

TJ, Tstg

- 55 to + 150
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12).
c. ISD 9.0 A, dI/dt 120 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91031
S11-0509-Rev. B, 21-Mar-11

www.vishay.com
1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

1.7

UNIT
C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage

VDS

VGS = 0 V, ID = 250 A

200

VDS/TJ

Reference to 25 C, ID = 1 mA

0.24

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 200 V, VGS = 0 V

25

VDS = 160 V, VGS = 0 V, TJ = 125 C

250

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)
gfs

ID = 5.4 Ab

VGS = 10 V

VDS = 50 V, ID = 5.4 A

0.40

3.8

800

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5

VGS = 10 V

ID = 5.9 A, VDS = 160 V,

see fig. 6 and 13b

240

76

43

7.0

pF

nC

Gate-Drain Charge

Qgd

23

Turn-On Delay Time

td(on)

9.4

28

39

20

4.5

7.5

9.0

36

2.0

170

340

ns

1.1

2.2

nC

Rise Time
Turn-Off Delay Time

tr
td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VDD = 100 V, ID = 5.9 A,

Rg = 12 , RD = 16 , see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
Body Diode Voltage

IS
ISM
VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

A
G

TJ = 25 C, IS = 9.0 A, VGS = 0 Vb
TJ = 25 C, IF = 5.9 A, dI/dt = 100 A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

www.vishay.com
2

Document Number: 91031

S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

101

100
4.5 V
20 s Pulse Width
TC = 25 C

10-1
10-1

100

ID, Drain Current (A)

91031_02

4.5 V

100

20 s Pulse Width
TC = 150 C
100

20 s Pulse Width
VDS = 50 V

101

10

VGS, Gate-to-Source Voltage (V)

91031_03

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

25 C

100

Top

10-1
10-1

150 C

10-1

Fig. 1 - Typical Output Characteristics, TC = 25 C

101

101

101

VDS, Drain-to-Source Voltage (V)

91031_01

ID, Drain Current (A)

ID, Drain Current (A)

Top

VDS, Drain-to-Source Voltage (V)

91031_04

3.0
2.5

ID = 5.9 A
VGS = 10 V

2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 2 -Typical Output Characteristics, TC = 150 C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91031

S11-0509-Rev. B, 21-Mar-11

www.vishay.com
3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630

Capacitance (pF)

1600

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

1200

Ciss
800

Coss
400
Crss

ISD, Reverse Drain Current (A)

Vishay Siliconix

101
150 C

25 C
100

VGS = 0 V

0
100

101

0.5

VDS, Drain-to-Source Voltage (V)

91031_05

VDS = 100 V
VDS = 40 V

102
5

10 s

10

100 s

1 ms

10 ms

1
5

For test circuit

see figure 13

0
0
91031_06

10

20

30

40

QG, Total Gate Charge (nC)

TC = 25 C
TJ = 150 C
Single Pulse

0.1

50

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

www.vishay.com
4

1.5

Operation in this area limited

by RDS(on)

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

103
VDS = 160 V

12

1.3

1.1

Fig. 7 - Typical Source-Drain Diode Forward Voltage

ID = 5.9 A

16

0.9

VSD, Source-to-Drain Voltage (V)

91031_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

0.7

0.1
91031_08

10

102

103

104

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91031

S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

RD

VDS
10
VGS
8

ID, Drain Current (A)

D.U.T.

RG

+
- VDD
10 V

Pulse width 1 s
Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

2
VDS
90 %

0
25

50

75

100

125

150

TC, Case Temperature (C)

91031_09

10 %
VGS

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(on)

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

0 0.5
0.2

0.1

PDM

0.1
0.05

t1

0.02
0.01

t2

Single Pulse
(Thermal Response)

Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

10-2
10-5

10-4

10-3

10-2

0.1

10

t1, Rectangular Pulse Duration (s)

91031_11

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

L
Vary tp to obtain
required IAS

VDS

tp
VDD
D.U.T.

RG

+
-

IAS

V DD

VDS

10 V
tp

0.01

IAS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91031
S11-0509-Rev. B, 21-Mar-11

Fig. 12b - Unclamped Inductive Waveforms

www.vishay.com
5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

EAS, Single Pulse Energy (mJ)

600

ID
4.0 A
5.7 A
Bottom 9.0 A
Top

500
400
300
200
100
0

VDD = 50 V
25

91031_12c

50

75

100

125

150

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

www.vishay.com
6

Fig. 13b - Gate Charge Test Circuit

Document Number: 91031

S11-0509-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF630, SiHF630
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91031.

Document Number: 91031

S11-0509-Rev. B, 21-Mar-11

www.vishay.com
7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000