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4. Cite two reasons why interstitial diffusion is normally more rapid than vacancy diffusion.
Interstitial diffusion is normally more rapid than vacancy diffusion because: (1) interstitial atoms, being
smaller, are more mobile; and (2) the probability of an empty adjacent interstitial site is greater than for a
vacancy adjacent to a host (or substitutional impurity) atom.
c/ t= D (2c/ x2 )
Where
is time
is the diffusion coefficien
is the position
c is the concentration
how easily or difficult the atoms can diffuse on other materials. When D is high , that means
that the diffusion can occur difficultly or it needs more time.
10. A sheet of steel 2.5 mm thick has nitrogen atmospheres on both sides at 900 oC and is
permitted to achieve a steady-state diffusion condition. The diffusion coefficient for nitrogen
in steel at this temperature is 1.2 1010 m2/s, and the diffusion flux is found to be 1.0 10 -7
kg/m2- s. Also, it is known that the concentration of nitrogen in the steel at the high-pressure
surface is 2 kg/m3. How far into the sheet from this high pressure side will the concentration
be 0.5 kg/m3? Assume a linear concentration profile. ( steady state diffusion )
T=900 c
D= 1.2 1010 m2/s
J =1.0 10-7 kg/m2- s
C=2 kg/m3
X=0.5 kg/m3
J= -D dc/dx
1.0 10 -7= -1.2 1010
11. What is the effect of the presence of impurities and deviations from stoichiometry on the
diffusion rate of ions in ionic crystals?
The rate of diffusion of these electrically charged couples is limited by the
diffusion rate of the slowest moving species. That is it enhances the diffusion
rate of ions in ionic crystal by several orders of magnitude. Some ionic crystal
may have defects that occur because of the impurities and by deviation from
the stochiometry. These imperfections can affect diffusion in ionic materials
throughout two ways : (1) intrinsic point defects such as Frenkel and schottky
defects whose number depends on temperature, and (2) extrinsic point
defects whose presence is due to impurity ions of different valance than the
host ions.