Behavior characteristic of a cap-resistor, memcapacitor and a memristor from the

response obtained of RC and RL electrical circuits described by fractional differential

equations
Jos Francisco GMEZ AGUILAR*.
Department of Solar Materials, Renewable Energy Institute.
National Autonomous University of Mexico.
Priv. Xochicalco s/n. Col. Centro. Temixco Morelos, Mexico.
Abstract
This paper provides an analysis of a RC and RL electrical circuits described by a fractional
dierential equation of Caputo type, the order considered is 0 < 1. The Laplace
transform of the fractional derivative is used. To keep the dimensionality of the physical
quantities R, C and L an auxiliary parameter is introduced characterizing the existence of
fractional components in the system. The relationship between and is reported. The
response obtained from the fractional RC and RL circuits exhibits a characteristic behaviors
of a cap-resistor, memcapacitor and memristor, as well as charge-voltage for
memcapacitive systems and current-voltage for memristive systems. The relationship
between Ohm's law and Faradays laws for the charge stored in a capacitor and induction is
reported. Illustrative examples are presented.
Keywords: Fractional Calculus, Mittag-Leffler Functions, Electrical Circuits, Fractional
Differential Equation, Cap-resistor, Memcapacitor, Memristor.
1 Introduction
The application of Fractional Calculus (FC) has the attracted interest of researchers in
recent decades. FC is the generalization of ordinary integrals and derivatives of integer
orders to arbitrary orders, this topic is nearly as old as conventional calculus, however,
these ideas seem to be quite a sophisticated topic and are not very easy to explain, mainly
due to the lack of relation to some common important physical concepts, such as velocity
and acceleration. We provide examples from many areas of physics; engineering and
bioengineering based on derivatives of non-integer order (see references. [1-8] and the
references therein). FC provides an excellent instrument for the description of hereditary
properties of various materials and processes. In comparison with the classical integer-order
models the FC provides effects not considered, this is its main advantage.
Modeling as fractional order proves to be useful particularly for systems where
memory or hereditary properties play a significant role. This is due to the fact that an
integer order derivative at a given instant is a local operator which considers the nature of
the function at that instant and within its neighborhood only, whereas a fractional derivative
* Correspondence: jgomez@ier.unam.mx

takes into account the past history of the function from an earlier point in time, called
lower terminal up to the instant at which the derivative is to be computed. Fractional
order models have already been used for modeling of electrical circuits (such as domino
ladders, tree structures, etc.) and elements (coils, memristor, etc.) [9-10]. Unlike the work
of the authors mentioned above, in which there is a direct passing from an ordinary
derivative to a fractional one, here first we analyze the ordinary derivative operator and
then try to bring it to the fractional form in a consistent manner.
The aim of this work is the generalization of RC and RL electrical circuits using
fractional differential equations, the generalization of these circuits yielded characteristic
behaviors of a cap-resistor, a memcapacitor and a memristor. This paper is organized as
follows. Section two briefly reviews elements with memory: cap-resistor, memcapacitor,
meminductor and memristor. Section three presents the basic definitions of fractional
calculus. Section four looks at the construction of fractional differential equations. The fifth
section analyzes fractional relations in main passive elements. Section six presents
application examples and finally, the seventh section is devoted to our conclusions.
2 Elements with Memory
Traditionally electrical circuit theory has been developed considering three basic elements:
resistance, capacitors and inductors. Leon Chua in 1970 found, from a mathematical point
of view, symmetry principles between the four electrical variables of a circuit: current i,
voltage v, charge q and magnetic flux . Chua predicted the existence of a missing element,
the memristor (short for memory resistor) M, M = d/dq, this element describes the
relationship between the magnetic flux and charge. A memristor is a resistor that changes
its resistance depending on the magnitude and direction of the current going through it, this
device has the property of conserving resistance even with an interrupted or eliminated
current flow. This memory capacity gives the memristor ample possibilities of an
application in the manufacture of non-volatile memories with a higher integration density
than current ones [11]. This device has captured the interest of the scientific community
due to its capacity to function in an analog way as would happen in synapse in the human
brain; it is considered that its multiple applications will give rise to a technological
revolution similar to the one produced by transistors in its moment [12]. In April 2008 the
Stanley Williams research group working in Hewlett-Packard laboratories announced the
physical realization of the memristor, which behaved as predicted by Chua in 1970 [13].
The cap-resistor was proposed by Reyes-Melo [14], this fractional element defines the
intermediate behavior between a resistor and a capacitor, v =

( RC )
C

d q
dt

, where C is the

capacitance, R the resistance, q the charge and 0 < 1. This device displays a similar
behavior to the Constant Phase Element (CPE) which is commonly used as way to correct
the deviation from ideal capacitors and for characterizing the electrochemical properties of
biological tissues and biochemical materials [15]. Some authors [16] present differential
2

and integral operators of fractional order in the modeling of relaxation phenomena in semicrystalline polymers; the cap-resistor describes the viscoelastic behavior of certain
polymeric systems. The memcapacitor offers a link between time integral of charge q and
flux , = qdt and the meminductor links charge q with the time integral of the flux
, q = dt , namely capacitors and inductors whose capacitance and inductance,
respectively, depend on past states. Various systems exhibit memcapacitive or
meminductive behavior including vanadium dioxide metamaterials, nanoscale capacitors
with interface traps, or embedded nanocrystals [1718]. The theory of mem-elements has
been extensively reviewed [19-23].

3 Overview of Fractional Calculus

The definitions of fractional order derivatives are not unique and several, including:
Riemann-Liouville, Grnwald-Letnikov and the Caputo Fractional Derivative (CFD). In the
Caputo case, the derivative of a constant is zero and the initial conditions for the fractional
differential equations have a known physical interpretation. For function f(t), CFD is
defined as [4]
C
o

Dt f (t ) =

t
1
f ( n ) ( )
d ,
(n ) 0 (t ) n+1

(1)

where n = 1, 2 , , N and n 1 < n. We consider the case n = 1, i.e., in the integrand

there is only a first derivative. In this case, 0 < 1, is the order of the fractional
derivative.
For example, in the case f(t) = tk, where k is an arbitrary number and 0 < 1 we
have the following expression for the CFD
C
0

Dt t k =

k (k )
t k , (0 < 1),
(k + 1 )

(2)

where is the gamma function. If = 1, the expression (2) yields the ordinary derivative.
C
0

Dt1t k =

dt k
= kt k 1.
dt

(3)

The Laplace transform to CFD is given by [4]

m 1

L Co Dt f (t ) = S F ( s ) S k 1 f ( k ) (0).

(4)

k =0

The Mittag-Leffler function has caused extensive interest among physicists due to
its vast potential for applications describing realistic physical systems with memory and
delay. The Mittag-Leffler function is defined by

tm
, (a > 0),
m = 0 ( am + 1)

Ea (t ) =

(5)

when a = 1, from (5), we obtain

tm
tm
E1 (t ) =
=
= et ,
m = 0 ( m + 1)
m=0 m !

(6)

where the exponential function is a particular case of the Mittag-Leffler function.

4 Construction of Fractional Differential Equations, an Alternative

Some authors replace the integer derivative with a fractional one on a purely mathematical
basis. However, from the physical and engineering point of view this is not completely
correct because the physical parameters contained in the differential equation should not
have the dimensionality measured in the laboratory. One possible way to clarify these
things is to replace the ordinary time derivative operator with the fractional one in the
following way

d
d
,
dt
dt

0 < 1

(7)

It can be seen that equation (7) is not quite right from a physical point of view
because the time derivative operator d/dt has a dimension of inverse seconds s-1, while the
fractional time derivative operator d/dt has, s-. To be consistent with the time
dimensionality we propose the use of a new parameter in the following way,

1 d = 1 ,
1 dt s

0 < 1

(8)

where is an arbitrary parameter which represents the order of the derivative. In the case
= 1 the expression (8) becomes an ordinary derivative operator. In this way (8) is
dimensionally consistent if, and only if, the new parameter , has a dimension of time [] =
s. This time is called the cosmic time [24] and is a non-local time. Another physical and
geometrical interpretation of the fractional operators is given [25]. The fractional operator
is defined by

d 1 d ,
dt 1 dt

n -1 < n

(9)

The expression (9) is a time derivative because its dimension is s-1. The parameter
(auxiliary parameter) represents the fractional time components, this components shows an
intermediate behavior between a conservative and a dissipative system.
5 Fractional Relations in Main Passive Elements.
Ohms law states that the current flowing through a conductor between two given points is
directly proportional to the potential difference as well as inversely proportional to the
resistance between them. The mathematical formula can be written as follows

v(t ) = Ri(t ),

(10)

where i(t) is the current flowing through the conductor measured in Ampers (A), v(t) is the
potential difference measured between two points of the conductor with units of Volts V
and R is the resistance of the conductor measured in Ohms . The current is the change in
the charge q with respect to time t, this current is defined by

i(t ) =

dq
.
dt

(11)

Taking this into account, Ohms law can be written as a function of the charge q(t),
v(t ) = R

dq
.
dt

(12)

The idea is to rewrite Ohms law in terms of fractional derivative. Using the
expression (9), Ohms law (12) becomes a fractional Ohms law
v(t ) =

R d q
,
1 dt

n-1 n,

(13)

when n = 1 and = 1 from the expression (13) we have (12).

As this new parameter , has the dimension of time [] = s. There are two possible
cases relating to this parameter, the first relates to an RC circuit where the product = RC
is the time constant of an RC circuit and its dimensions are seconds, while the other case is
when = L/R which representing the time constant of an RL circuit and its dimensions also
in seconds.
First case: If = RC and n = 1 of (13)
v(t ) =

R d q
,
( RC )1 dt

0 1,

(14)

when = 1 the expression (14) becomes (12). When = 0 the expression (14) is

v (t ) =

q
.
C

(15)

Equation (15) is the Faraday law for the charge stored in a capacitor.
Second case: If = L/R and n = 2 of (13)

v(t ) =

d q
,
dt

( R)
L

1 2.

(16)

The derivative of (16) with respect to time is

( R)

v(t ) = R L

d 1i (t )
,
dt 1

1 2,

(17)

where i(t) is the current, if = 1 in (17) we obtain

( R)

v(t ) = R L

d i (t )
,
dt

0 1,

(18)

when = 1 the expression (18) is

v(t ) = L

di (t )
.
dt

(19)

Equation (18) is the Faraday law of induction. When = 0 the expression (18)
becomes (10). Equations (15) and (19) show the existence of capacitive and inductive
properties in the resistance. The following section describes the RC and RL electrical
circuits using fractional differential equations.

6 Application Examples
6.1 Fractional RC Circuit
Below, a fractional RC circuit and its generalization are described
The RC circuit is represented in Figure 1; applying Kirchhoffs law the fractional
differential equation for the RC circuit has the form

d q 1
C
+ q(t ) = v(t ),

dt

(20)

where

RC

0 < 1.

(21)

Equation (21) can be called a fractional time constant due to its dimensionality s.
When = 1, in (21) we obtain the ordinary time constant, = RC. Assume that q(0) = 0 for
any time t, v(t) = Vou(t), where Vo is a constant source of voltage and u(t) is the step
function. Applying Laplace transform in (20) with zero initial conditions we have

Q( s) =

CV0
1
s s +

(22)

Applying the inverse Laplace transform in (22) we obtain the behavior of the charge
respect to time t

q(t ) = CV0 1 E

1
t ,

RC

(23)

where E(t) is the Mittag-Leffler function.

The parameter , which represents the order of the fractional differential equation
(20), can be related to the parameter , which characterizes the presence of fractional
components in the system. In this case the relationship is given by the expression

RC

(24)

If = 1, then, from (24) = RC, which means that there are no fractional components in
the system, that is to say, it is a regular RC. However, in the range 0 < < 1, or the
equivalent 0 < < RC, fractional structures are present in the system.
Substituting the expression (24) in (23) we have

q(t ) = CV0 1 E ( 1 t ) ,

(25)

t
where t =
, is a dimensionless parameter. From (25), we obtain the voltage across the
RC
capacitor

v(t ) = V0 1 E ( 1 t ) .
The current is i(t ) =

(26)

dq (t )
, then from (25) we obtain
dt
i (t ) =

V0 d
1 E ( 1 t ) .
R dt

(27)

Given the values, R = 1 M, C = 1 F, we simulate equations (25), (26) and (27),

obtaining Figure 2 and Figure 3, which show the behavior of the charge and voltage across
the capacitor (in the same Figure) and the current across the resistance, respectively.
Intermediate values between 0 < 1 indicate the existence of another capacitive
element different from the ideal capacitor in the RC circuit shown in Figure 1. Fractional
structures (components that show an intermediate behavior between a system conservative
(capacitor) and dissipative (resistor)) are presented; this behavior indicate the existence of
the cap-resistor element.
Now assuming that q(0) = a, where a is a constant defined in the range (; ).
For any time t, v(t) = Vou(t), where Vo is a constant source of voltage and u(t) is the step
function. Applying Laplace transform in (20) we obtain

Q( s) =

CV0
1
s s +

s +

(28)

Applying the inverse Laplace transform in (28) we obtain the behavior of the charge
respect to time t

} {

q(t ) = CV0 1 E ( 1 t ) a t 1E , ( 1 t ) ,

(29)

t
where E(t) and E, (t) are the Mittag-Leffler functions, and t =
, is a dimensionless
RC
parameter.
From (29), we obtain the voltage across the capacitor

v(t ) = V0 1 E ( 1 t )
The current is i (t ) =

i (t ) =

a 1
t E , ( 1 t ) .
C

(30)

dq (t )
, then from (29) we obtain
dt

V0 d
aV d 1
1 E 1 t 0
t E , ( 1 t ) .
R dt
RC dt

(31)

If a=0, in (29), (30) and (31) we obtain equations (25), (26) and (27) respectively.
For example, given values R = 1 M, C = 1 F and a = -0.01, we simulate equations (29),
(30) and (31) obtaining Figure 4 and Figure 5 which show the behavior of the charge and
voltage across the capacitor (in the same figure) and the current across the resistance,
respectively.

Given the values, R = 0.01 M, C = 1 F and a = 0.01, we simulate equations (29),

(30) and (31) obtaining Figure 6 and Figure 7, which show the behavior of the charge and
voltage across the capacitor (in the same figure) and the current across the resistance,
respectively.
If the source in equations (25), (26), and (27) is v(t) = V, where V = sin(t), =
260, we obtain Figures 8 and 9 for the behavior of the charge and voltage across the
capacitor (in the same figure) and the current across the resistance, respectively.
Figure 10 shows the hysteresis curve for the cap-resistor element, this curve exhibit
a memcapacitive behavior (memory capacitance). After the transient, in the steady-state the
circuit behaves as a memcapacitor.
5.2 Fractional RL Circuit
The RL circuit is represented in Figure 11. R is the resistance, L is the inductance,
and v(t) is the voltage source. The fractional differential equation for the RL circuit has the
form

d i(t ) 1
1
+ i (t ) =
v(t ),
R

dt

(32)

where

L
R

0 < 1

(33)

it can be called a fractional time constant due to its dimensionality s. When = 1, from
L
(33) we obtain the well-known time constant = . We assume that i(0) = 0 and for any
R
time t, v(t) = V, where V = sin(t), = 260. Applying Laplace transform in (32) with
zero initial conditions, we obtain
s I ( s) +

I (s) =

V ( s)
,
R

(34)

solving for I(s), we obtain

I (s) =

V ( s)
1
R s +

0 < 1.

(35)

where V ( s ) =

+ s2
2

, given values R = 0.1 , L = 0.001 H, simulates equation (35).

) t
Figure 12, shows the behavior of the current across the inductor, t = .
L

Applying inverse Laplace transform in (35) and considering V (t ) = L

di (t )
we
dt

obtain Figure 13 for voltage across the inductor.

The intermediate behavior between 0 < 1 for voltage and current indicates the
existence of another inductive element different from the ideal inductor in the RL circuit
shown in Figure 11, this behaviour indicates the existence of the memristor element. The
hysteresis curve shown in Figure 14 is formed due to current through the memristor not
varying linearly with the applied voltage, unlike a resistor that follows Ohms law. For
every voltage value we obtain two possible current values. This behavior stems from the
memory effect. After the transient, in steady-state, the circuit behaves as a memristor.
If equation (35) takes the order of the derivative as 1 < 2, its presents the
behavior described in Figure 15; the current versus time shows an increase in the current if
the order of the derivative increases, indicating a nonlinear resistive behavior in the
system, characteristic memristor behavior.

Considering again the order of the derivative as 1 < 2 in equation (35) there is
an increase in load as the order of the derivative tends to 2, showing the typical behavior
of a memristor where the gradual increase in the charge leads to nonlinear increase in the
magnetic flux [20]. Figure 16 shows the behavior of the charge for different values of .
6 Conclusion

This paper presents the generalization of RC and RL electrical circuits using fractional
differential equations, the generalization of these circuits yielded characteristic behaviors of
cap-resistors (an element showing intermediate states between capacitor and resistor) a
memcapacitor (memory capacitance), and a memristor (elements exhibiting an intermediate
state between an inductor and a resistor).
The generalized Ohm's law (fractional Ohms law) allowed us to find a direct
relationship between Ohm's law and Faraday's law for the charge stored in a capacitor and
induction according to the time constant ( = RC or = L/R) involved in the parameter .
The cap-resistor exhibits a behavior that appears as a result of competition between
a capacitive and resistive element (Cole type behavior) characterized by the fractional order
derivative of the applied voltage.
10

In the special case where the initial condition is zero for the charge and current, the
RC and RL circuits behave as a memcapacitor and memristor element in steady-state and it
has a zero-crossing hysteresis loop, charge-voltage for memcapacitive systems and currentvoltage for memristive systems.
The generalized RC circuit (in the range 0 < 1 ) exhibits a behavior similar to the
cap-resistor that can be used as an equivalent circuit in the modeling of processes in which
the behavior of the systems show competition between a resistive and capacitive element.
For example biological systems or polymeric systems, on the other hand the generalized RL
circuit (in the range 1 < 2 ) exhibits a behavior similar to the memristor and can be used
as an equivalent circuit in the modeling of processes in which the behavior of the systems
show competition between a resistive and inductive element.
Equations (29), (30) and (31) represent the fractional equations for the charge,
voltage, and current in the RC circuit, respectively, and provide the generalization of the
electrical circuits; equation (24) characterizes the existence of the fractional structures in
the system. The fractional components change the time constant and affect the transient
response of the system. We also found that there is a relation between and , depending
on the system studied. Equation (35) represents the fractional equation for the current in the
RL circuit; the numerical Laplace transform method was used for the simulation of
equations for the current and voltage.

A meminductor and a memcapacitor behave in the same fashion as a memristor; for

a meminductor hysteresis curve (current-flow) there would be various current-flow
relationships. The meminductor behaves as an inductance because for every magnetic flow
value we obtain a current value, but to determine this we need to know the memory of the
device; in the case of the memcapacitor hysteresis curve (charge-flow) we would obtain
various charge-flow relationships, with this behavior stemming from the memory effect.
With the approach here presented it will be possible to better study of transient
effects in electrical systems. The electrical circuit will provide a robust framework for
studying the bioelectrical response to transient stimuli, when an equivalent electrical circuit
has been used; also, we have extended fractional calculus to the study of electrical circuits
and the notion of memory devices to both capacitive and inductive systems described for
electrical circuits RC and RL.
Acknowledgments

The author acknowledges fruitful discussions with Mayra Martnez. This work was
supported by CONACYT.
References

11

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13

Figure 1. RC circuit.
-6

Charge (C)

Charge across the Capacitor

x 10

0.5

=1
0

0.5

=0.75

=0.5

=0.25

1.5

2
2.5
t/RC
Voltage across the Capacitor

3.5

3.5

Voltage (V)

0.5

=1 =0.75
0

0.5

=0.5

1.5

2
t/RC

=0.25
2.5

Figure 2. Figure A) Charge across the capacitor and Figure B) Voltage across the
capacitor, both for different values of .
-6

Current across the Resistor

x 10

0.9
0.8

Current (A)

0.7
0.6

=1

0.5

=0.75
=0.5

0.4

=0.25

0.3
0.2
0.1
0

0.5

1.5

2
t/RC

2.5

3.5

14

Figure 3. Current across the resistor for different values of .

Charge across the Capacitor

-4

Charge (C)

-10

-2

-10

=0.25

=0.5

=1

=0.75

-10

0.5

1.5

2
2.5
t/RC
Voltage across the Capacitor

3.5

3.5

Voltage (V)

-10

-10

=0.25

=0.5

1.5

=1

=0.75

-10

0.5

2
t/RC

2.5

Figure 4. Figure A) Charge across the capacitor and Figure B) Voltage across the
capacitor, both for different values of .

Current across the Resistor

10

10

-1

10

Current (A)

=1
=0.75
=0.5

-2

10

=0.25

-3

10

-4

10

-5

10

-6

10

0.5

1.5

2
t/RC

2.5

3.5

Figure 5. Current across the resistor for different values of .

15

Charge across the Capacitor

Charge (C)

=1
10

=0.5
=0.25

0.5

10
Voltage (V)

=0.75

-2

1.5

2
2.5
t/RC
Voltage across the Capacitor

3.5

3.5

=1
=0.75

=0.5

10

=0.25

10

10

0.5

1.5

2
t/RC

2.5

Figure 6. Figure A) Charge across the capacitor and Figure B) Voltage across the
capacitor, both for different values of .
Current across the Resistor
0.5
0
-0.5

Current (A)

-1

=0.75

-1.5

=1

=0.5

-2
-2.5

=0.25

-3
-3.5
-4
-4.5

0.05

0.1

0.15
t/RC

0.2

0.25

0.3

Figure 7. Current across the resistor for different values of .

16

-7

Charge across the Capacitor

x 10

=0.5 =0.25

Charge (C)

=0.75

=1

1
0
-1
-2
0

0.005

0.015

0.02
0.025
0.03
t/RC
Voltage across the Capacitor

=0.5 =0.25

0.2
Voltage (V)

0.01

=0.75

0.035

0.04

0.045

0.04

0.045

=1

0.1
0
-0.1
-0.2
0

0.005

0.01

0.015

0.02
0.025
t/RC

0.03

0.035

Figure 8. Figure A) Charge across the capacitor and Figure B) Voltage across the
capacitor, both for different values of .
-5

Current across the Resistor

x 10

=0.25

=0.5
=0.75

Current (A)

=1
0
-2
-4
-6
-8

0.005

0.01

0.015

0.02
0.025
t/RC

0.03

0.035

0.04

0.045

Figure 9. Current across the resistor for different values of .

17

-3

Histeresis Curve

x 10
8
6
4

Charge (C)

2
0
-2
-4
-6
-8
-0.015

-0.01

-0.005

0
Voltage (V)

0.005

0.01

0.015

Figure 10. Hysteresis curve (relation voltage-charge) for = 0.9, memcapacitive system.
i(t)
+

R
L

v(t)
-

Figure 11. RL circuit.

Current
4

=0.8
3

=0.9

=1
Current (A)

1
0
-1
-2
-3
-4
0.02

0.025

0.03

0.035

0.04

0.045
t/(L/R)

0.05

0.055

0.06

0.065

0.07

Figure 12. Current across the inductor for different values of .

18

Voltage
15

=0.8
=0.9

10

=1

Voltage (V)

-5

-10

-15
0.02

0.025

0.03

0.035

0.04

0.045
t/(L/R)

0.05

0.055

0.06

0.065

0.07

Figure 13. Voltage across the inductor for different values of .

Histeresis Curve
6

Current (A)

-2

-4

-6

-6

-4

-2

0
Voltage (V)

6
-3

x 10

Figure 14. Hysteresis curve (relation voltage-current) for = 0.9, memristive system.

19

Current
2

1.5

=1
=1.2

Current (A)

=1.4
0.5

=1.7

-0.5

-1

0.005

0.01

0.015

t/(L/R)

Figure 15. Behavior of the current for different values of .

-3

10

Charge

x 10

=1.7
8

=1

Charge (C)

=1.4
=1.2

-2

0.005

0.01

0.015

t/(L/R)

Figure 16. Behavior of the charge for different values of .

20