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DATA SHEET
dbook, halfpage
M3D186
BSR62
PNP Darlington transistor
Product data sheet
Supersedes data of 1999 Apr 26
2004 Nov 11
NXP Semiconductors
BSR62
FEATURES
PINNING
PIN
base
collector
emitter
DESCRIPTION
APPLICATIONS
Industrial applications such as:
handbook, halfpage
Print hammer
Solenoid
2
1
DESCRIPTION
MAM306
Fig.1
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BSR62
SC-43A
DESCRIPTION
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
90
VCES
collector-emitter voltage
VBE = 0 V
80
VEBO
emitter-base voltage
open collector
IC
ICM
IB
0.2
Ptot
830
mW
Tstg
storage temperature
65
+150
Tj
junction temperature
150
Tamb
ambient temperature
65
+150
Tamb 25 C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Nov 11
NXP Semiconductors
BSR62
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
150
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
50
nA
50
nA
IC = 150 mA
1 000
IC = 500 mA
2 000
IC = 0.5 A; IB = 0.5 mA
1.4
IC = 1 A; IB = 4 mA
1.8
IC = 1 A; IB = 4 mA
2.4
200
MHz
0.5
0.7
ICES
IEBO
VEB = 4 V; IC = 0 A
hFE
DC current gain
VCEsat
collector-emitter saturation
voltage
VBEsat
fT
transition frequency
MIN.
turn-on time
toff
turn-off time
2004 Nov 11
NXP Semiconductors
BSR62
MGD839
6000
hFE
5000
4000
3000
2000
1000
0
101
10
102
VCE = 10 V.
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450
(probe)
450
R2
Vi
DUT
R1
MGD624
Vi = 10 V; T = 200 s; tp = 6 s; tr = tf 3 ns.
R1 = 56 ; R2 = 10 k; RB = 10 k; RC = 18 .
VBB = 1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 .
2004 Nov 11
oscilloscope
IC (mA)
103
NXP Semiconductors
BSR62
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
E
d
L
b
1
e1
3
b1
L1
2.5
5 mm
scale
b1
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Nov 11
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
BSR62
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
2004 Nov 11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/05/pp7