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Abstract
In this paper, we have designed and simulated an ultralow-power CMOS OTA in weak inversion for lowfrequency Gm-C applications. In this OTA using DC
shifting and bulk-driven differential pair configuration
can be made large common mode input range and linear
input range without using complex approaches. The
symmetricalOTA was successfully verified in a standard
0.35-m CMOS process. This OTA is optimized for
800mV supply voltage. The simulated OTA consumes
45A, performing 46 dB open loop gain, 187 Hz unity
gain frequency. The simulated transconductance of this
OTA is 66nS, which is suitable for low-frequency Gm-C
applications. This OTA can be used in band-gap,
physical transducers, process controllers and mainly on
small battery operated devices.
Keywords: Low-voltage, Low-power,bulk-driven, lowfrequency Gm-C applications, symmetricalOTA.
1. INTRODUCTION
One of the most widespread analog building blocks with
very large number of applications is the operational
transconductance amplifier (OTA). The symmetrical
OTA especially, with its
low-transconductance,
makes it possible to implement fully integrated Gm-C
filters for low-frequency applications, which are
important for the acquisition of bioelectric signals where
chip realization of large time constants are needed [1].
Nowadays, a high performance analog and mixed signal
circuit using low-voltage becomes mandatory mainly
due to the advance of the VLSI with complicated circuit
systems, and the demand for battery-operated portable
equipments. Low-voltage operation helps reducing
power consumption of the digital circuitry, and also
preventing oxide breakdown due to decreased gate oxide
thickness. However, supply voltage reduction in analog
circuit causes several performance degradations and,
therefore, new approaches in the design are needed to
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REVIEW
OF
SYMMETRICAL OTA
2.
THE
SIMULATED
( )
(2)
(1)
and
the
bulk
(4)
(5)
(3)
=( )
(6)
(7)
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(8)
(9)
(10)
(11)
M1/M2
PMOS
20/2
50
M3a
NMOS
10
20/10
10
M3b
NMOS
20/10
M4a
NMOS
10
20/10
10
M4b
NMOS
20/10
M5a/M5b
NMOS
10
20/10
10
M6a/M6b
NMOS
10
20/10
10
M7a/M7b
PMOS
10
20/10
40
M8a/M8b
PMOS
10
20/10
40
M9
PMOS
20/10
50
M10
PMOS
10
20/10
50
M11
PMOS
20/10
101
M12
PMOS
20/10
50
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27
80
0.8
0.8
0.8
46.21
45.63
46.70
191.28
164.45
75.88
74.60
0.7
0.7
0.7
0.92
0.77
0.625
0.907
61
60
0.14
0.12
CL (pF)
25
25
25
36
36
36
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(a)
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(b)
(c)
Fig.6: Frequency response of OTA for three corners; (a)
typical, (b) fast and (c) slow
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ACKNOWLEDGEMENTS
The authors would like to express their sincere thanks to
Dr.Amiri for his valuable comments.
REFERENCES
1. Sols-Bustos, S., Silva-Martnez, J., Maloberti, F.,
&Sanchez-Sinencio, E. (2000). A 60-dB dynamic-range
CMOS sixth-order 2.4-Hz low-pass filter for medical
applications. IEEE Transactions on Circuits and
Systems-II,
Analog
and
Digital
Signal
Processing,47(12), 13911398.
2. Ferreira, L. H. C., Pimenta, T. C., & Moreno, R. L.
(2007). An ultra-low-voltage ultra-low-power CMOS
miller OTA with rail-to-rail input/output swing. IEEE
Transactions on Circuits and Systems-II, Express Briefs,
54(10), 843847.
3. Veeravalli, A., Sanchez-Sinencio, E., & SilvaMartnez, J. (2002). Transconductance amplifier
structures with very small transconductances:
Acomparative design approach. IEEE Journal of SolidState Circuits, 37(6), 770775.
4. Harrison, R., & Charles, C. (2003). A low-power lownoise CMOS amplifier for neural recording applications.
IEEE Journal of Solid-State Circuits, 38(6), 958965.
5. El Mourabit, A., Lu, G., &Pittet, P. (2005).Widelinear-range subthreshold OTA for low-power, lowvoltage, and low-frequency applications. IEEE
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