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EEC-301
Roll No.
B. Tech.
(Semester-Ill) Theory Examination, 20ll-12
F'UNDAMENTALS
OF'
ELECTRONIC DEVICES
Time : 3 HoursJ
Note
Section-A
Attempt
r.
pattsof this
question.
2xl0:20
(a)
(b)
all
(c)
for a given
,l
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(d)
(e)
(0
(g)
(h)
of
it is used in,
protection.
0322
(2)
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(i)
of photoelectronic
CI)
Section-B
Attempt all pafis of this question.
2.
(a) (i)
5=30
carrier
'
6x
? How does it
depend on
I
I
0322
(3)
r)
ll
1-#
_tl
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l:
It'
-_-7
(s)
'
ni=1.5x
(d)
': '
flow
Explain different components of currents
through the structure of a N-P-N transistor'
base
How the emitter injection efficiency and
trnnsport fagtor influences the amplificationl
. :,
factor
.-..
',,,.'
t(g)
"
1016
:'
,.
?
:
r.''
,
nn,rmerate the'dpeciat'i'eut*t of
flSffT.
of the MOSFET,
,,,
Sectlon'C
10x5=50
t,
Why
level
How can it be made more sensltlve to low
used
intensity of iight ? What material should be
to detect lighl of wavelength
1'
= 0'6
pm? t
(4)
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I
Or
Nd respectively.
Show that the electron concentration
in the
semiconductor can be given
by
,o=Y* **)'*8
where n; is the intrinsic carrier
concentration.
4.
Or
Define the following terms
with suitable exanrples
(i)
Photoluminescence
(ir),
Cathodoluminescence
(iii) Electroluminescence
(iv) Carrier life time.
,322
(s)
ii
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5;
in a P'N
ll=
'where symbols have their osual nreaning'
'or
Explain the working of GUNN and IMPATT
main
diode with neat sketches' Mention the
difference between them'
6.
Or
circuit and
What is IGBT ? Draw its equivalent
enumerate its sPecial features ?
0322
(6)
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7.
(i)
(ii)
(iii)
Tunnel diode
Solar cell
Schottkl diodes.
0322-7-11334
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