CARLOS, NOSCAL, ULANDAY, VENUS

GROUP 2
ELECS_3
SEPTEMBER 29, 2015
1. When the number of free electrons is
increased in doped semiconductor, it
becomes a/an semiconductor.
A. N type
B. P type
C. PN type
D. NP type
2. A positive charge outside the nucleus
which is present only in semiconductor due
to unfilled covalent bonds.
A. Electron
B. Proton
C. Hole
D. Neutron
3. The sharing of valence electrons to
produce a chemically stable atom
A. Bound electrons
B. Crystal
C. Covalent bond
D. Recombination
4. What occurs in pn diodes when the
minority carriers that cross the depletion
region under the influence of the electric
field gain sufficient kinetic energy to be
able to break covalent bonds in atoms with
which they collide?
A. Drift
B. Avalanche breakdown
C. Diffusion
D. Saturation

5. Which of the items below is not a pentavalent

atom?
A. Phosphorus
B. Aluminum
C. Antimony
D.Arsenic
6. A
is a light-sensitive device whose number
of free electrons generated is proportional to
the intensity of the incident light.
A. Varicap
B. Photodiode
C. Schottky diode
D. LED
7. A diode that has a negative resistance
characteristics is the
A. tunnel diode
B. laser diode
C. schottky diode
D. hot-carrier diode
8. The semiconductor device that radiate light or
utilize light are called
A. Active devices
B. Photoelectric devices
C. Optoelectronic devices
D. Passive devices

CARLOS, NOSCAL, ULANDAY, VENUS

GROUP 2
ELECS_3
SEPTEMBER 29, 2015
9. A special type of semiconductor diode
which varies its internal capacitance as the
voltage applied to its terminal varies.
A. Varactor diode
B. Point contact diode
C. Zener diode
D. Silicon controlled rectifier
10. Which of the items below describes an RF
amplifier which will amplify a weak signal
voltage in relatively the same proportion as
it will amplify a stronger signal voltage?

13. The maximum efficiency of a class A power

amplifier is
A. 25%
B. 50%
C. 79%
D. 98%
14. A
is considered a current controlled
device.
A. Diode
B. Field effect transistor

A. Class A amplifier

C. Transistor

B. Linear amplifier

D. Resistor

C. Non-linear amplifier
D. Inverting amplifier
11. Which power amplifier has the highest
collector efficiency?
A. Class A
B. Class C

15. In a pnp transistor, the p-region are

A. base and emitter
B. base and collector
C. emitter and collector
D. collector and collector
16. The channel of a JFET is between the

C. Class B

A. drain and source

D. Class AB

B. gate and drain

12. The maximum efficiency of a class B pushpull amplifier is

A. 25%
B. 50%

C. input and output

D. gate and source
17. An n-channel D-MOSFET with positive V GS
is operating in

C. 79%

A. the depletion mode

D. 98%

B. cutoff
C. the enhancement mode
D. saturation

CARLOS, NOSCAL, ULANDAY, VENUS

GROUP 2
ELECS_3
SEPTEMBER 29, 2015
18. What are the three terminals of a FET?
A. Gate, source and drain
B. Plate, cathode and grid
C. Gate source and battery
D. Input, output and ground
19. What refers to annihilation of a hole and
electron?
A. Doping
B. Recombination
C. Diffusion
D. BondingA
20. In SCR differs from 4-layer diode because
A. it has a gate terminal
B. it is not thyristor
C. it does not have four layers
D. it cannot be turned on and off

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