Академический Документы
Профессиональный Документы
Культура Документы
uk
(EENG17300)
Alternating current I
Three-phase systems
Transformers
Alternating current II
Power semiconductor devices
Power semiconductor switches
applications
7. Direct current electrical machines
8. Control systems
1.
2.
3.
4.
5.
6.
Module structure
(EENG17300)
Control III
Electric
drives
III
IV
Control II
**
Power
electronic
systems 4
Design of
electrical
machines
Advanced**
power
electronic
design
SMPS laboratory
*
Electrical energy
conversion II
Electrical Systems
Year
II
Power diodes
Power Bipolar Junction Transistors (BJTs)
Thyristors
Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
Insulated Gate Bipolar Transistors (IGBTs)
Drive
signal
iin
-Vcc
TR2
iout
TR1
Vcc
0V
RLOAD
Drive
signal
iin
-Vcc
TR2
iout
TR1
Vcc
0V
RLOAD
If, say, Vcc = 12V and at a given moment in time vout = 6V then
we have only 50% efficiency at best.
10
TR1 or TR2 support the full-load current, iout, and the difference
between either Vcc or Vcc and the load voltage.
11
Low cost
12
13
1An
14
(EENG17300)
15
iA
Vs
A
vAB
ILOAD
16
Wc = ILOADvAB(on)
iA
Vs
17
vAB(on)
ILOAD
iA
Vs
A
vAB
ILOAD
18
v, i
t1
vAB
iA
t2
19
The voltage needs some time to fall and the current takes some
time to rise at turn-on. The converse, of course, is the case at
turn-off.
iAvAB
v, i
vAB
iA
t2
iAvAB
woff = i A ( t ) v AB ( t )
t1
won = i A ( t ) v AB ( t )
20
iAvAB
v, i
T1
Eon
vAB
iA
Eoff
T2
t2
A AB
A AB
T2
i v
T2 + t 2
T1
i v
iAvAB
Eoff =
t1
Eon =
T1 + t1
dt
dt
21
iAvAB
v, i
t1
Eon
vAB
iA
Eoff
t2
iAvAB
22
Woff = Eoff f sw
Won = Eon f sw
The diagrams imply that turn-on and turn-off losses are identical.
Again, this is rarely the case.
Current and voltage rise and fall rates are shown as linear here:
this is rarely the case.
Some points:
23
iAvAB
v, i
t1
Eon
vAB
iA
iAvAB
v, i
t1
Eon
vAB
iA
Some points:
24
iAvAB
v, i
t1
Eon
vAB
iA
iAvAB
v, i
t1
Eon
vAB
iA
But:
25
26
27
1The
Vs
A
vAB
ILOAD
28
29
K
A
N
K
Functionally identical to small signal diodes but are designed for higher
voltage and current
Power diode
30
Power diode
31
Power diode
32
Modules
6.5 kV, 200 A
1.8 kA, 1.7 kV
Stud
5 kV, 400 A
600 A, 3.2 kV
Chassis-Mount
Power diode
33
34
Presspack
Power diode
Off
To infinity
Ideal
Current
Current
Voltage
35
Voltage
0.8 1 V
Higher turn on
voltage compared to
small-signal
Current
Reverse
leakage
current
Vrrm
Actual
Reverse
Breakdown
Voltage
On
To infinity
Power diode
Eoff
1
QrrVdc
2
36
The energy dissipated in the diode during turn off can be estimated from
the product of the tail charge Qrr and the supply voltage Vdc:
Power diode
37
Whilst the former switch more quickly, cost and forward voltage
drop tend to be slightly higher.
Power diode
V rrm
reverse
breakdown
Higher reverse
leakage current
than pn diode
Lower forward
voltage drop
than the pn diode
I
V
38
cathode
anode
39
V < 9 kV
I < 13.5 kA
Converter
Rectifier
V < 100 V
I < 40 A
Schottky
Voltage /
Current Range
Low
High
Relative
Cost
Moderate
moderate on-state
voltage, high surge
current capability, good
switching performance
Principal Features
40
High frequency
power
electronic
switching
Line frequency
rectification /
conversion
Output rectifier
in low voltage
SMPS
Typical
application
Base (B)
PNP
Base (B)
NPN
Emitter (E)
Collector (C)
Emitter (E)
Collector (C)
Symbols
Control
Voltage
Control
Current
Control
Voltage
Control
Current
Function
Blocking
Voltage
Load
Current
Blocking
Voltage
Load
Current
base
emitter
41
emitter
collector
base
collector
Structure
42
iC
= hFE
iB
43
44
A
P
P N
G (gate)
K
45
Thyristor
A
P
P N
G (gate)
Thyristor
46
It is turned on by injecting a
current pulse into the base terminal
of one of them: this control electrode is,
of course, referred to as the gate here.
Thyristor
iG
Q1
Q2
47
Thyristor
iG
Q1
Q2
n
p
n
48
i =C
dv AK
dt
The thyristor
Thyristor
Q1
i
K
Q2
49
V BR
IL
Ih
IA [A]
I G >0
I h = holding current
I L = latching current
I G >>0
Thyristor
V BR
I G =0
V AK [V]
50
Thyristor
51
52
Thyristor
CATHODE K
GATE G
ANODE A
Currently available in
ratings to 2000A, 6000V
53
1Invented
source
in the 1950s by, amongst others, an interesting character called William Shockley.
gate
drain
The MOSFET
MOSFET
54
The power electrodes are called the source and the drain.
The MOSFET
MOSFET
55
vDS
iD
RDS ( on )
VDS
=
I D
The MOSFET
MOSFET
56
P-channel
N-channel
Depletion-mode
N-channel
Enhancement-mode
P-channel
MOSFET
57
P-channel
G
S
N-channel
Depletion-mode
The MOSFET
The MOSFET
S
G
N-channel
Enhancement-mode
P-channel
MOSFET
58
N-channel
Normally on:
negative gate voltage
applied to shut
off conducting
channel
Normally on:
positive gate voltage
applied to shut
off conducting
channel
P-channel
59
Normally off:
positive gate voltage
applied to establish
conducting channel
N-channel
Enhancement-mode
Normally off:
negative gate voltage
applied to establish
conducting channel
The MOSFET
P-channel
Depletion-mode
The MOSFET
MOSFET
P-channel
holes
G
S
electrons
N-channel
Depletion-mode
G
D
P-channel
holes
G
60
electrons
N-channel
Enhancement-mode
The MOSFET
MOSFET
P-channel
holes
G
S
electrons
N-channel
Depletion-mode
G
D
P-channel
holes
G
61
electrons
N-channel
Enhancement-mode
Note the solid bar between the source and drain in the
depletion-mode device symbols and the broken bar in the
enhancement-mode device symbols.
MOSFET
62
MOSFET
P-channel
The MOSFET
P-channel
N-channel
Enhancement-mode
N-channel
Depletion-mode
The MOSFET
MOSFET
63
Vsupply
64
Vsupply
However, the P-channel MOSFET is sometimes useful where losses are not
critical and its gate-drive requirement is convenient: consider the grounded
load arrangement here:
MOSFET
65
MOSFET
MOSFET
66
MOSFET
67
However:
1. They exhibit a low noise margin
2. Although the voltage level is not problematic, most logic families
cannot supply sufficient current to charge and discharge the gate
capacitance of anything other than very small MOSFETs rapidly enough
during switching: gate-driver circuitry is usually still required.
The power MOSFET typically has a threshold voltage of approximately 35V. However, some so-called logic-level power MOSFETs are available with
threshold voltages of approximately 0.8-1V.
MOSFET
68
RDS(on)
(TR1)
i1
i2
iT
RDS(on)
(TR2)
69
The MOSFET
MOSFET
Switching losses are also low: the device can easily operate
at up to 100kHz and above without these being excessive: the
MOSFET is the fastest of all the power semiconductor devices.
The MOSFET
MOSFET
70
71
recent developments in MOSFET technology have yielded higher voltage devices with
ever-lower RDS(on) figures (eg., 70m at 600V in a standard TO-247 package).
1However,
RDS(on) = kVDSS2.5-2.7
The RDS(on) value rises very sharply with the devices voltage
rating:
The MOSFET
MOSFET
gate
source
drain
The MOSFET
MOSFET
72
gate
source
drain
The MOSFET
MOSFET
73
gate
emitter
collector
1This
The IGBT
IGBT
74
emitter
gate
emitter
collector
does not appear to have been realised in any other forms such as an npn bipolar transistor
driven by an P-channel enhancement-mode MOSFET.
75
1It
gate
collector
The IGBT
IGBT
Between them, the IGBT and the MOSFET have made the
power BJT effectively obsolete in power conversion
applications.
The IGBT
IGBT
76
But both the turn-on and turn-off switching losses usually rise with
temperature.
Compared with the MOSFET, conduction losses are relatively flat with
temperature,
The IGBT
IGBT
77
emitter/ anode
collector/ cathode
Unlike the MOSFET, the IGBT does not have an intrinsic or parasitic
anti-parallel diode inherent to its structure and, if needed, this has to be
added separately.
The IGBT
IGBT
78
10
V (kV)
10
100
1000
f (kHz)
MOSFET
0.1
IGBT
thyristor
Devices: overview
79
However series
strings of devices are
used to achieve this.
0.1
10
100
V (kV)
0.1
10
100
IGBT
thyristor
Devices: overview
1000
f (kHz)
MOSFET
80
10
V (kV)
0.1
10
100
IGBT
thyristor
Devices: overview
1000
f (kHz)
MOSFET
81
0.1
10
V (kV)
0.1
10
100
IGBT
thyristor
Devices: overview
1000
f (kHz)
MOSFET
82
Latest-generation MOSFETS
have been developed with
high voltage and
low RDS(on) ratings.
0.1
10
V (kV)
0.1
10
100
IGBT
thyristor
Devices: overview
1000
f (kHz)
MOSFET
83
10
V (kV)
0.1
10
100
1000
f (kHz)
84
Fast recovery
pn diode
Schottky
diode
Mains-grade
pn diode
Devices: overview
0.1
10
V (kV)
The future?
0.1
10
100
IGBT
thyristor
Devices: overview
1000
f (kHz)
MOSFET
SiC?
85
The performance
of SiC devices is, in many
ways, excellent:
0.1
10
V (kV)
0.1
10
100
IGBT
thyristor
Devices: overview
1000
f (kHz)
MOSFET
SiC?
86
n.mcneill@bristol.ac.uk
Neville McNeill
(EENG17300)
87