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BA12001B / BA12003B / BA12003BF / BA12004B

Standard ICs

High voltage, high current Darlington


transistor array
BA12001B / BA12003B / BA12003BF / BA12004B
The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
arrays consisting of seven circuits of Darlington transistors.
Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive
loads such as relay coils, attachments can be kept to a minimum.
With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use
with various drivers and as an interface with other elements.

!Applications
Drivers for LEDs, lamps, relays and solenoids
Interface with other elements

!Features
1) High output current. (IOUT=500mA Max.)
2) High output sustain voltage. (VOUT=50V Max.)
3) Seven Darlington transistors built in.
4) Built-in surge-absorbing clamp diode.
(Note : Refer to the Reference items when using in application. )

!Block diagram

IN1 1

16 OUT1

IN2 2

15 OUT2

IN3 3

14 OUT3

IN4 4

13 OUT4

IN5 5

12 OUT5

IN6 6

11 OUT6

IN7 7

10 OUT7

GND 8

COM

BA12001B / BA12003B / BA12003BF / BA12004B


Standard ICs
!Internal circuit configuration
COM
OUT

COM
OUT

IN

2.7k

IN

7.2k
7.2k
3k

3k

GND

GND

Fig.1 BA12001B

Fig.2 BA12003B / BF

COM
IN

OUT

10.5k

7.2k
3k
GND

Fig.3 BA12004B

!Absolute maximum ratings (Ta=25C)


Parameter
Power supply voltage

Symbol

Limits

Unit

VCE

60

Input voltage

other than BA12001B

VIN

0.5+30

Input current

BA12001B

IIN

25

mA / unit

Output current

IOUT

500

mA / unit

Ground pin current

IGND

2.31

Power dissipation

DIP package
SOP package

Diode reverse voltage

12502

Pd

mW

6253

VR

60

Diode forward current

IF

500

mA

Operating temperature

Topr

25+75

Storage temperature

Tstg

55+150

1 Pulse width 20ms, duty cycle 10%, same current for all 7 circuits
2 Reduced by 10mW for each increase in Ta of 1C over 25C .
3 Reduced by 50mW for each increase in Ta of 1C over 25C .

!Recommended operating conditions (Ta=25C)


Symbol

Min.

Typ.

Max.

Unit

Conditions

Output current

Parameter

IOUT

350

mA

Fig.9, 10

Power supply voltage

VCE

55

Input voltage (excluding BA12001B)

VIN

30

Input current (BA12001B only)

IIN

25

mA / unit

BA12001B / BA12003B / BA12003BF / BA12004B


Standard ICs
!Electrical characteristics (Ta=25C)
Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Output leakage current

IL

10

VCE = 60V

DC current transfer ratio

hFE

1000

2400

VCE = 2V, IOUT = 350mA

0.94

1.1

Output saturation voltage

VCE(sat)

1.14

1.3

1.46

1.6

1.75

2.53

1.91

2.4

2.75

2.17

3.4

3.27

0.90

1.35

0.39

0.5

BA12003B / BF

IOUT = 100mA, IIN = 250A


IOUT = 200mA, IIN = 350A

IOUT = 350mA, IIN = 500A

VIN

VIN

VIN

IIN

IR

50

Diode forward voltage

VF

1.73

IF = 350mA

Input capacitance

CIN

30

pF

VIN = 0V, f = 1MHz

BA12004B
BA12003B / BF

Input voltage

BA12004B
BA12003B / BF
BA12004B
BA12003B / BF

Input current

BA12004B
Diode reverse current

VCE = 2V, IOUT = 100mA

VCE = 2V, IOUT = 200mA

VCE = 2V, IOUT = 350mA

mA

VIN = 3.85V
VIN = 5V

VR = 60V

Note: Input voltage and input current for BA12001 vary based on external resistor.

!Measurement circuits
(1) Output leakage current IL
OPEN

(2) DC current transfer ratio


Output saturation voltage

hFE = IO
II
VCE (sat)

(3) Input voltage VIN


OPEN

OPEN

OPEN

IL

IO
II

IO

VCE

VI

VCE

VCE (sat)

(4) Input current IIN

(5) Diode reverse current

IR

(6) Diode forward voltage IF

OPEN
IR
OPEN

VR

OPEN

IF

OPEN

VF

VI
OPEN

OPEN

(7) Input capacitance CIN


OPEN

f
Capacitance
bridge
LO

HI

VI

OPEN
TEST SIGNAL LEVEL 20mVrms

Fig.4

BA12001B / BA12003B / BA12003BF / BA12004B


Standard ICs
!Application example

RY

LED

(2) LED driver

(1) Relay driver

Fig.5

!Application notes
The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or
TTL.
A current limiting resistor needs to be connected in series with the input.
The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input
current to a stable value, resistors are connected in series to each of the inputs.
The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order
to limit the input current to a stable value, resistors are connected in series to each of the inputs.
The load for each of these products should be connected between the driver output and the power supply. To protect the
IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply.
Fig.6 shows the configuration of the on-chip diode for surge absorption.
In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the
substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical
construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate
measures regarding the thermal characteristics of the design considering the current that will be handled.
Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing
diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low
foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current.
OUT

COM

In-flow current to the surge-absorbing diode

N+

P+

N+
IDi

ISO

ISO

Isub
N-well
N+

B/L
P-sub

Fig.6 Vertical construction of the surge-absorbing diode

BA12001B / BA12003B / BA12003BF / BA12004B


Standard ICs
!Electrical characteristic curves

800
625 BA12003BF
600
400

OUTPUT CURRENT : IOUT (mA)

1000

400

2ch

300

3ch
200

4ch
5ch

100

6ch

7ch

All series

400
350

10%

20%

300
Ta = 25C
200
110mA

Ta = 75C
100

64mA

200
0

25

50

75

100

125

150

10 20 30 40 50 60 70 80 90 100

500
The shaded range should
never be exceeded under
any circumstances

DC CURRENT GAIN : hFE

OUTPUT CURRENT : IOUT (mA)

100

Usage conditions range

80

100

IIN = 250A

1000

Max. usage conditions

60

500

2000

300

40

Fig.9 Output conditions (II)

Ta = 25C
VCE = 2.0V

5000

350

200

20

DUTY CYCLE (%)

Fig.8 Output conditions (I)

Fig.7 Power dissipation vs. ambient


temperature

400

DUTY CYCLE : (%)

AMBIENT TEMPERATURE : Ta (C)

OUTPUT CURRENT: IOUT (mA)

When all circuits are on

All series

1250 Other than BA12003BF


1200

OUTPUT CURRENT : IO (mA)

POWER DISSIPATION : Pd (mW)

500

500

1400

500

200

400

300
Ta = 30C

200

Ta = 25C
100
Ta = 80C

10

20

30

40

50

100
10

20

50

100

200

OUTPUT CURRENT : IOUT (mA)

300
Ta = 30C

200

Ta = 25C

100
Ta = 80C

0.5

1.0

1.5

2.0

2.5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.13 Output current vs. voltage


between collector and emitter

1.5

2.0

2.5

20
IIN = 500A

IIN = 350A

400

1.0

Fig.12 Output current vs. voltage


between collector and emitter

500

500

0.5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.11 DC current transfer ratio


vs. output current

Fig.10 Usage conditions range


per circuit

OUTPUT CURRENT : IOUT (mA)

1000

OUTPUT CURRET : IOUT (mA)

SUPPLY VOLTAGE: VCC (V)

0
10

500

0
0

INPUT CURRENT : IIN (mA)

400

300
Ta = 30C

200

Ta = 25C
100

15
Ta = 25C
Ta = 25C
Ta = 75C

10

Ta = 80C
0
0

0.5

1.0

1.5

2.0

2.5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.14 Output current vs. voltage


between collector and emitter

10

20

30

40

INPUT VOLTAGE : VIN (V)

Fig.15 Input current vs. input


voltage (BA12003B / BF)

BA12001B / BA12003B / BA12003BF / BA12004B


Standard ICs
4

25

25

Ta = 75C
2

10

20

30

OUTPUT VOLTAGE : VCE OUT (V)

INPUT CURRENT : IIN (mA)

Ta = 25C

20

Ta = 75C
Ta = 25C
Ta = 25C

15

10

VOUT = 20V
RL = 68
20

0.5

15

10

1.5

2.5

Fig.18 Output voltage vs. input


voltage (BA12004B)

Fig.17 Output voltage vs. input


voltage (BA12003B / BF)

!External dimensions (Units : mm)


BA12001B / BA12003B / BA12004B

BA12003BF

10.0 0.2
19.4 0.3

0.51Min.

6.2 0.3

0.11

0.3 0.1
0.5 0.1

1.5 0.1

3.2 0.2 4.25 0.3

7.62

2.54

1.27

0.4 0.1

0.15 0.1

16

4.4 0.2

6.5 0.3

16

0.3Min.

0 ~ 15

0.15

DIP16

INPUT VOLTAGE : VIN (V), VI (V)

INPUT VOLTAGE : VIN (V)

INPUT VOLTAGE : VIN (V)

Fig.16 Input current vs. input


voltage (BA12004B)

Ta = 75C
Ta = 25C
Ta = 25C

40

OUTPUT VOLTAGE : VOUT (V), VCE (V)

VOUT = 20V
RL = 68

Ta = 25C

SOP16