Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520AF

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time

VBE = 0 V

PINNING - SOT199
PIN

TYP.

MAX.

UNIT

6.0
0.2

1500
800
10
25
45
5.0
0.35

V
V
A
A
W
V
A
s

Ths 25 C
IC = 6.0 A; IB = 1.2 A
ICsat = 6.0 A; IB(end) = 0.85 A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

case isolated

c
case

b
1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

average over any 20 ms period

Ths 25 C

MIN.

MAX.

UNIT

-65
-

1500
800
10
25
6
9
150
6
45
150
150

V
V
A
A
A
A
mA
A
W
C
C

TYP.

MAX.

UNIT

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

without heatsink compound

3.7

K/W

Rth j-hs

Junction to heatsink

with heatsink compound

2.8

K/W

Rth j-a

Junction to ambient

in free air

35

K/W

1 Turn-off current.

September 1997

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all

three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

7.5
800

13.5
-

1.0
-

mA
V
V

13
7

5.0
1.1
9.5

V
V

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

IEBO
BVEBO
VCEOsust

Emitter cut-off current

Emitter-base breakdown voltage
Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage
DC current gain

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 100 mA; VCE = 5 V
IC = 6 A; VCE = 5 V

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Cc

Collector capacitance

IE = 0 A; VCB = 10 V; f = 1 MHz

115

pF

Switching times (32 kHz line

deflection circuit)

ICsat = 6.0 A; LC = 330 H; Cfb = 9 nF;

IB(end) = 0.85 A; LB = 3.45 H;
-VBB = 4 V; (-dIB/dt = 1.2 A / s)

3.0
0.2

4.0
0.35

s
s

4.5
0.35

5.5
0.5

s
s

ts
tf

Turn-off storage time

Turn-off fall time
Switching times (16 kHz line
deflection circuit)

ts
tf

ICsat = 6.0 A; LC = 650 H; Cfb = 19 nF;

IB(end) = 1.0 A; LB = 5.3 H; -VBB = 4 V;
(-dIB/dt = 0.8 A / s)

Turn-off storage time

Turn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520AF

ICsat

TRANSISTOR

+ 50v
IC

100-200R

DIODE
t

IBend

IB

Horizontal
t

Oscilloscope

10us

13us

Vertical
32us

1R

100R

VCE

6V
30-60 Hz
t

Fig.1. Test circuit for VCEOsust.

Fig.4. Switching times waveforms (32 kHz).

IC / mA

ICsat
90 %
IC

250
10 %

200

tf

ts
IB
IBend

100

t
0
VCE / V

min
VCEOsust

- IBM

Fig.2. Oscilloscope display for VCEOsust.

TRANSISTOR
IC

Fig.5. Switching times definitions.

ICsat

+ 150 v nominal
adjust for ICsat

DIODE
t

Lc
IBend

IB

t
20us

26us

IBend
64us
VCE

LB

T.U.T.
Cfb

-VBB
t

Fig.6. Switching times test circuit.

Fig.3. Switching times waveforms (16 kHz).

September 1997

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

100

BU2520AF

hFE

VBESAT / V

1.2

Tj = 25 C

Tj = 25 C

5V

Tj = 125 C

1.1

Tj = 125 C

1
0.9

10
1V

IC=
0.8

8A
6A
5A
4A

0.7

0.6

0.1

10

100

2
IB / A

IC / A

Fig.7. Typical DC current gain. hFE = f (IC)

parameter VCE

1.2

Fig.10. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter IC

VBESAT / V

1.1

VCESAT / V

10

Tj = 25 C

Tj = 25 C

Tj = 125 C

Tj = 125 C

1
0.9

8A

0.8

1
6A

IC/IB=

0.7

5A

0.6

0.5

IC = 4 A

0.4

0.1

0.1

1
IC / A

10

0.1

Fig.8. Typical base-emitter saturation voltage.

VBEsat = f (IC); parameter IC/IB

1
IB / A

10

Fig.11. Typical collector-emitter saturation voltage.

VCEsat = f (IB); parameter IC

VCESAT / V

1000

Eoff / uJ

IC/IB =

0.9

0.8

IC = 6 A

0.7

32 kHz

0.6

16 kHz

5A
100

0.5
Tj = 25 C

0.4

Tj = 125 C

0.3
0.2
0.1
10

0
0.1

10

0.1

100

IC / A

Fig.9. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/IB

September 1997

1
IB / A

10

Fig.12. Typical turn-off losses. Tj = 85C

Eoff = f (IB); parameter IC; parameter frequency

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

12
11
10
9
8
7
6
5
4
3
2
1
0

BU2520AF

ts, tf / us

100
90
80
70
60

IC =

50

6A

40
30

5A

20

tf

10
0

0.1

1
IB / A

10

20

40

60

80
Ths / C

100

120

140

Fig.15. Normalised power dissipation.

PD% = 100PD/PD 25C = f (Ths)

Fig.13. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 16 kHz

12
11
10
9
8
7
6
5
4
3
2
1
0

with heatsink compound

110

ts

16 kHz

Normalised Power Derating

PD%

120

ts, tf / us

10

Zth / (K/W)

32 kHz
1

ts
0.1

6A

0.1

1
IB / A

PD

0.01

tf

D=0
0.001
1E-06

10

Fig.14. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz

September 1997

0.2
0.1
0.05
0.02

IC =

5A

0.5

tp

D=

1E-04

1E-02
t/s

tp
T

1E+00

Fig.16. Transient thermal impedance.

Zth j-hs = f(t); parameter D = tp/T

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

IC / A

BU2520AF

BU2520AF

100
tp =
ICM

= 0.01
30 us

ICDC
10
100 us

Ptot
1

1 ms

0.1
10 ms
DC

0.01
1

10

100

1000

VCE / V

Fig.17. Forward bias safe operating area. Ths = 25 C

ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

September 1997

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520AF

MECHANICAL DATA
Dimensions in mm

15.3 max

Net Mass: 5.5 g

5.2 max

3.1
3.3

0.7
7.3

3.2
o
45

6.2
5.8
21.5
max

seating
plane

3.5 max
not tinned

3.5

15.7
min
1

2.1 max

5.45

3
1.2
1.0

0.7 max
0.4 M

2.0

5.45

Fig.18. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.500

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520AF

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.500

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