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FEATURES
Ultrahigh Speed
5,500 V/s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth
440 MHz, G = +2
320 MHz, G = +10
Small Signal Bandwidth (3 dB)
1 GHz, G = +1
700 MHz, G = +2
Settling Time 10 ns to 0.1%, 2 V Step, G = +2
Low Distortion over Wide Bandwidth
SFDR
66 dBc @ 20 MHz, Second Harmonic
75 dBc @ 20 MHz, Third Harmonic
Third Order Intercept (3IP)
26 dBm @ 70 MHz, G = +10
Good Video Specifications
Gain Flatness 0.1 dB to 75 MHz
0.01% Differential Gain Error, RL = 150
0.01 Differential Phase Error, RL = 150
High Output Drive
175 mA Output Load Drive
10 dBm with 38 dBc SFDR @ 70 MHz, G = +10
Supply Operation
+5 V to 5 V Voltage Supply
14 mA (Typ) Supply Current
APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging Amplifier
2
G = +2
RF = 301
RL = 150
7 +VS
+IN 3
6 OUT
VS 4
5 NC
4
5
6
7
8
100
10
FREQUENCY RESPONSE (MHz)
1000
REV. F
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
IN
VS 2
+IN 3
The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is maintained over a wide bandwidth with worst-case distortion of
40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications with
multitone signals, such as IF signal chains, the third order
intercept (3IP) of 12 dBm is achieved at the same frequency. This
distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.
The AD8009 is capable of delivering over 175 mA of load current
and will drive four back terminated video loads while maintaining
low differential gain and phase error of 0.02% and 0.04,
respectively. The high drive capability is also reflected in the
ability to deliver 10 dBm of output power @ 70 MHz with
38 dBc SFDR.
The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range 40C to +85C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range of 0C to 70C.
30
G=2
RF = 301
VO = 2V p-p
SECOND
100 LOAD
50
60
SECOND
150 LOAD
70
THIRD
100 LOAD
80
1
+VS
PRODUCT DESCRIPTION
DISTORTION (dBc)
40
G = +10
RF = 200
RL = 100
VOUT 1
NC = NO CONNECT
1
2
AD8009
8 NC
IN
0
VO = 2V p-p
AD8009
NC 1
THIRD
150 LOAD
90
100
1
10
FREQUENCY RESPONSE (MHz)
70
Model
DYNAMIC PERFORMANCE
3 dB Small Signal Bandwidth, VO = 0.2 V p-p
R Package
RT Package
Conditions
G = +1, RF = 301
G = +1, RF = 332
G = +2
G = +10
G = +2
G = +10
G = +2, RL = 150
G = +2, RL = 150 , 4 V Step
G = +2, RL = 150 , 2 V Step
G = +10, 2 V Step
G = +2, RL = 150 , 4 V Step
Min
480
300
390
235
45
4,500
10 MHz
20 MHz
70 MHz
10 MHz
20 MHz
70 MHz
70 MHz
150 MHz
250 MHz
f = 10 MHz
f = 10 MHz, +In
f = 10 MHz, In
NTSC, G = +2, RL = 150
NTSC, G = +2, RL = 37.5
NTSC, G = +2, RL = 150
NTSC, G = +2, RL = 37.5
DC PERFORMANCE
Input Offset Voltage
AD8009AR/JRT
Typ
Max
1,000
845
700
350
440
320
75
5,500
10
25
0.725
MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/s
ns
ns
ns
73
66
56
77
75
58
26
18
12
1.9
46
41
0.01
0.02
0.01
0.04
dBc
dBc
dBc
dBc
dBc
dBc
dBm
dBm
dBm
nV/Hz
pA/Hz
pA/Hz
%
%
Degrees
Degrees
2
TMIN to TMAX
90
TMIN to TMAX
INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short-Circuit Current
+Input
Input
+Input
VCM = 2.5
3.7
RL = 10 , PD Package = 0.7 W 150
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
50
4
50
75
50
75
250
170
5
7
150
150
mV
mV
V/C
A
A
A
A
k
k
k
pF
V
dB
3.8
175
330
V
mA
mA
14
64
0.03
0.05
0.03
0.08
110
8
2.6
3.8
52
+5
TMIN to TMAX
VS = 4 V to 6 V
Unit
70
6
16
18
V
mA
mA
dB
REV. F
AD8009
(@ TA = 25C, VS = 5 V, RL = 100 , for R Package: RF = 301 for G = +1, +2,
Model
DYNAMIC PERFORMANCE
3 dB Small Signal Bandwidth, VO = 0.2 V p-p
Conditions
Min
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short-Circuit Current
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio
630
430
300
365
250
65
2,100
10
25
0.725
MHz
MHz
MHz
MHz
MHz
MHz
V/s
ns
ns
ns
10 MHz
20 MHz
70 MHz
10 MHz
20 MHz
70 MHz
f = 10 MHz
f = 10 MHz, +In
f = 10 MHz, In
74
67
48
76
72
44
1.9
46
41
dBc
dBc
dBc
dBc
dBc
dBc
nV/Hz
pA/Hz
pA/Hz
1
50
50
+Input
Input
+Input
VCM = 1.5 V to 3.5 V
50
RL = 10 , PD Package = 0.7 W
VS = 4.5 V to 5.5 V
64
4
150
150
mV
A
A
110
8
2.6
1.2 to 3.8
52
pF
V
dB
1.1 to 3.9
175
330
V
mA
mA
+5
REV. F
Unit
G = +1, RF = 301
G = +2
G = +10
G = +2
G = +10
G = +2, RL = 150
G = +2, RL = 150 , 4 V Step
G = +2, RL = 150 , 2 V Step
G = +10, 2 V Step
G = +2, RL = 150 , 4 V Step
DC PERFORMANCE
Input Offset Voltage
Input Bias Current
+Input Bias Voltage
INPUT CHARACTERISTICS
Input Resistance
AD8009AR/JRT
Typ
Max
10
70
6
12
V
mA
dB
AD8009
ABSOLUTE MAXIMUM RATINGS 1
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package: JA = 155C/W.
5-Lead SOT-23 Package: JA = 240C/W.
2.0
TJ = 150 C
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
5-LEAD SOT-23 PACKAGE
0
50 40 30 20 10 0 10 20 30 40 50 60
AMBIENT TEMPERATURE (C)
70 80 90
Model
AD8009AR
AD8009AR-REEL
AD8009AR-REEL7
AD8009ARZ*
AD8009ARZ-REEL*
AD8009ARZ-REEL7*
AD8009JRT-R2
AD8009JRT-REEL
AD8009JRT-REEL7
AD8009JRTZ-REEL*
AD8009JRTZ-REEL7*
AD8009ACHIPS
Temperature
Range
Package
Description
Package
Option
Branding
40C to +85C
40C to +85C
40C to +85C
40C to +85C
40C to +85C
40C to +85C
0C to 70C
0C to 70C
0C to 70C
0C to 70C
0C to 70C
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
Die
R-8
R-8
R-8
R-8
R-8
R-8
RT-5
RT-5
RT-5
RT-5
RT-5
HKJ
HKJ
HKJ
HKJ
HKJ
*Z = Pb-free part.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. F
6.2
6.1
G = +1, R
G = +1, RT
6.0
0
R PACKAGE:
RL = 100
G = +2, R AND RT
VO = 200mV pp
G = +1, +2: RF = 301 G = +10, R AND RT
G = +10: RF = 200
RT PACKAGE:
G = +1: RF = 332
G = +2: RF = 226
G = +10: RF = 191
1
2
3
4
5
G = +2
RF = 301
RL = 150
VO = 200mV p-p
5.8
5.7
5.6
5.5
5.4
6
7
5.9
5.3
5.2
10
100
1000
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
0.4
G = +2
RF = 301
RL = 150
VO = 200mV p-p
VS = 5V
7
0.3
0.2
G = +2
RF = 301
RL = 150
VO AS SHOWN
4
3
2
GAIN (dB)
1000
4V p-p
2V p-p
0.1
0.1
0.2
1
2
1
10
100
FREQUENCY (MHz)
0.3
1000
10
100
FREQUENCY (MHz)
1000
10000
22
21
+85C
20
40C
19
40C
G = +2
RF = 301
RL = 150
VO = 2V pp
4
3
2
GAIN (dB)
GAIN (dB)
+85C
17
2V p-p
4V p-p
16
15
14
13
12
2
1
10
100
FREQUENCY (MHz)
1000
REV. F
G = +10
RF = 200
RL = 100
VO AS SHOWN
18
10
100
FREQUENCY (MHz)
1000
AD8009
22
35
21
40
20
45
70MHz
GAIN (dB)
40C
G = +10
RF = 200
RL = 100
VO = 2V p-p
18
17
DISTORTION (dBc)
50
19
+85C
16
15
55
65
200
70
22.1
50
POUT
50
50
80
13
85
10 8
12
1
10
100
FREQUENCY (MHz)
1000
10
12
14
POUT (dBm)
0.02
G=2
RF = 301
VO = 2V p-p
40
SECOND,
100 LOAD
50
60
70
THIRD,
100 LOAD
80
THIRD,
150 LOAD
90
100
1
10
FREQUENCY RESPONSE (MHz)
70
G = +2
RF = 301
0.01
RL = 150
0.00
0.01
0.02
SECOND,
150 LOAD
DISTORTION (dBc)
5MHz
60
75
14
RL = 37.5
0
100
IRE
0.10
G = +2
0.05 RF = 301
RL = 37.5
0.00
RL = 150
0.05
0.10
100
IRE
20
30
G = +2
RF = 301
RL = 100
VO = 2V p-p
VS = 5V
G = +10
RF = 200
RL = 100
VO = 2V p-p
35
THIRD
40
45
DISTORTION (dBc)
30
DISTORTION (dBc)
250MHz
40
SECOND
50
60
SECOND
50
55
60
65
THIRD
70
70
75
80
80
1
10
100
200
10
70
FREQUENCY (MHz)
FREQUENCY (MHz)
REV. F
AD8009
10
35
40
G = +2
RF = 301
RL = 100
100mV p-p ON TOP OF VS
45
DISTORTION (dBc)
10
250MHz
50
70MHz
55
PSRR (dB)
20
60
65
70
5MHz
PSRR
30
+PSRR
40
75
200
80
50
22.1
50 P
OUT
85
95
10
60
50
50
90
10
12
70
0.03 0.1
14
500
100
300
50
200
250
22.1
50 P
OUT
40
45
INTERCEPT POINT (dBm)
10
FREQUENCY (MHz)
POUT (dBm)
50
50
35
30
25
20
200
150
100
NONINVERTING CURRENT
50
15
INVERTING CURRENT
0
10
10
100
FREQUENCY (MHz)
250
10
100
1M
1M
10M
100M 250M
10
301
PHASE
1k
80
VO
154
25
CMRR (dB)
RL = 100
301
VIN =
200mV p-p
20
40
GAIN
PHASE (Degrees)
TRANSRESISTANCE ()
100k
15
10k
10k
FREQUENCY (Hz)
100k
1k
154
100
30
35
40
45
120
50
55
100
0.01
0.1
10
100
160
1000
60
1
FREQUENCY (MHz)
REV. F
10
100
FREQUENCY (MHz)
1000
AD8009
2.0
G = +2
RF = 301
1.8
10
1.6
(VSWR)
OUTPUT RESISTANCE ()
100
1.4
1.2
0.1
1.0
0.01
0.03 0.1
10
100
0
0.1
500
10
FREQUENCY (MHz)
FREQUENCY (MHz)
100
500
10
20
16
POUT MAX (dBm)
18
8
G = +2
RF = 301
14
12
G = +10
RF = 200
10
8
RF
6
2
RG
50
4
50
2
0
10
POUT
50
0
100
1k
10k
100k
1M
10M
100M 250M
10
100
250
FREQUENCY (MHz)
FREQUENCY (Hz)
25
20
30
G = +10
RF = 200
20
50
15
G = +10
RF = 301
RL = 100
10
S12 (dB)
40
60
70
80
90
0
10
100
SOURCE RESISTANCE ()
500
10
100
FREQUENCY (MHz)
1000
REV. F
AD8009
2.2
G = +2
RF = 301
RL = 150
VO = 2V p-p
CCOMP
2.0
49.9
49.9
1.8
(VSWR)
200
1.6
22.1
1.4
CCOMP = 0pF
1.2
CCOMP = 3pF
1.0
500mV
0
0.1
10
FREQUENCY (MHz)
100
500
VOUT
100
90
1ns
G = +2
RF = 301
RL = 150
VO = 4V p-p
G = +10
RF = 200
RL = 100
VIN = 2VSTEP
10
0%
2V
2V
250ns
1V
G = +10
RF = 200
RL = 100
VO = 200mV p-p
G = +2
RF = 301
RL = 150
VO = 200mV p-p
50mV
50mV
1ns
REV. F
1.5ns
2ns
AD8009
G = +10
RF = 200
RL = 100
VO = 2V p-p
V
O
2ns
50mV
1ns
G = +10
RF = 200
RL = 100
VO = 4V p-p
12
CA = 2pF
3dB/div
6
CA = 1pF
1dB/div
GAIN (dB)
0
CA = 0pF
1dB/div
VOUT = 200mV pp
VIN
100
499
3ns
1V
CA
VOUT
50
12
499
15
1
1
GAIN (dB)
500mV
VS = 5V
G = +2
RF = 301
RL = 150
VO = 200mV p-p
10
1000
100
FREQUENCY (MHz)
CA = 2pF
CA
CA = 1pF
V
O
VIN
VOUT
50
499
100
499
VOUT = 200mV pp
VS = 5V
CA = 0pF
50mV
VS = 5V
G = +2
RF = 301
RL = 150
VO = 200mV p-p
1ns
40mV
1.5ns
10
REV. F
AD8009
0
HP8753D
AD8009
G=2
RF = RG= 301
DRIVING
WAVETEK 5201
TUNABLE BPF
fC = 50MHz
10
20
Z IN = 50
Z OUT = 50
30
0.001F
3
49.9
0.1F
REJECTION (dB)
+5V
10F
AD8009
49.9
WAVETEK 5201
BPF
301
5V
60
80
90
0.001F
0.1F
10F
+
APPLICATIONS
REV. F
50
70
301
40
11
AD8009
PRIMARY MONITOR
75 COAX
IOUTR
75
RED
75
75
GREEN
75
75
BLUE
75
ADV7160/
ADV7162
IOUTG
IOUTB
5V
+
0.1F
10F
AD8009
2
75
ADDITIONAL MONITOR
75 COAX
RED
75
301
301
0.1F
5V
10F
3
6
AD8009
75
GREEN
75
BLUE
75
301
301
3
6
AD8009
75
301
301
12
REV. F
AD8009
Driving a Capacitive Load
0.001F
3
RT
49.9
RG
0.1F
10F
AD8009
2
6 2VSTEP
RS
CL
50pF
RF
0.001F
5V
0.1F
10F
REV. F
13
AD8009
OUTLINE DIMENSIONS
8-Lead Standard Small Outline Package [SOIC]
(R-8)
Dimensions shown in millimeters and (inches)
5.00 (0.1968)
4.80 (0.1890)
4.00 (0.1574)
3.80 (0.1497)
6.20 (0.2440)
5.80 (0.2284)
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
SEATING
0.10
PLANE
0.50 (0.0196)
45
0.25 (0.0099)
1.75 (0.0688)
1.35 (0.0532)
8
0.25 (0.0098) 0 1.27 (0.0500)
0.40 (0.0157)
0.17 (0.0067)
2.80 BSC
1.60 BSC
1
PIN 1
0.95 BSC
1.30
1.15
0.90
1.90
BSC
1.45 MAX
0.15 MAX
0.50
0.30
SEATING
PLANE
0.22
0.08
10
5
0
0.60
0.45
0.30
14
REV. F
AD8009
Revision History
Location
Page
REV. F
15
16
C0101109/04(F)