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a

1 GHz, 5,500 V/s


Low Distortion Amplifier
AD8009

FEATURES
Ultrahigh Speed
5,500 V/s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth
440 MHz, G = +2
320 MHz, G = +10
Small Signal Bandwidth (3 dB)
1 GHz, G = +1
700 MHz, G = +2
Settling Time 10 ns to 0.1%, 2 V Step, G = +2
Low Distortion over Wide Bandwidth
SFDR
66 dBc @ 20 MHz, Second Harmonic
75 dBc @ 20 MHz, Third Harmonic
Third Order Intercept (3IP)
26 dBm @ 70 MHz, G = +10
Good Video Specifications
Gain Flatness 0.1 dB to 75 MHz
0.01% Differential Gain Error, RL = 150 
0.01 Differential Phase Error, RL = 150 
High Output Drive
175 mA Output Load Drive
10 dBm with 38 dBc SFDR @ 70 MHz, G = +10
Supply Operation
+5 V to 5 V Voltage Supply
14 mA (Typ) Supply Current
APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging Amplifier
2

G = +2
RF = 301
RL = 150

FUNCTIONAL BLOCK DIAGRAMS


8-Lead Plastic SOIC (R-8)

7 +VS

+IN 3

6 OUT

VS 4

5 NC

4
5
6
7
8

100
10
FREQUENCY RESPONSE (MHz)

1000

Figure 1. Large Signal Frequency Response; G = +2 and +10

REV. F
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.

IN

VS 2
+IN 3

The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is maintained over a wide bandwidth with worst-case distortion of
40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications with
multitone signals, such as IF signal chains, the third order
intercept (3IP) of 12 dBm is achieved at the same frequency. This
distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.
The AD8009 is capable of delivering over 175 mA of load current
and will drive four back terminated video loads while maintaining
low differential gain and phase error of 0.02% and 0.04,
respectively. The high drive capability is also reflected in the
ability to deliver 10 dBm of output power @ 70 MHz with
38 dBc SFDR.
The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range 40C to +85C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range of 0C to 70C.
30
G=2
RF = 301
VO = 2V p-p
SECOND
100 LOAD

50
60

SECOND
150 LOAD

70
THIRD
100 LOAD

80
1

+VS

PRODUCT DESCRIPTION

DISTORTION (dBc)

NORMALIZED GAIN (dB)

The AD8009 is an ultrahigh speed current feedback amplifier


with a phenomenal 5,500 V/s slew rate that results in a rise
time of 545 ps, making it ideal as a pulse amplifier.

40

G = +10
RF = 200
RL = 100

VOUT 1

NC = NO CONNECT

1
2

AD8009

8 NC

IN

0
VO = 2V p-p

AD8009

NC 1

5-Lead SOT-23 (RT-5)

THIRD
150 LOAD

90
100
1

10
FREQUENCY RESPONSE (MHz)

70

Figure 2. Distortion vs. Frequency; G = +2


One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
2004 Analog Devices, Inc. All rights reserved.

(@ T = 25C, V = 5 V, R = 100 ; for R Package: R = 301  for G = +1, +2,


AD8009SPECIFICATIONS
R = 200  for G = +10; for RT Package: R = 332  for G = +1, R = 226  for G = +2 and R = 191 for G = +10, unless otherwise noted.)
A

Model
DYNAMIC PERFORMANCE
3 dB Small Signal Bandwidth, VO = 0.2 V p-p
R Package
RT Package

Large Signal Bandwidth, VO = 2 V p-p


Gain Flatness 0.1 dB, VO = 0.2 V p-p
Slew Rate
Settling Time to 0.1%
Rise and Fall Time
HARMONIC/NOISE PERFORMANCE
Second Harmonic G = +2, VO = 2 V p-p
Third Harmonic

Third Order Intercept (3IP)


W.R.T. Output, G = +10
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error

Conditions

G = +1, RF = 301
G = +1, RF = 332
G = +2
G = +10
G = +2
G = +10
G = +2, RL = 150
G = +2, RL = 150 , 4 V Step
G = +2, RL = 150 , 2 V Step
G = +10, 2 V Step
G = +2, RL = 150 , 4 V Step

Min

480
300
390
235
45
4,500

10 MHz
20 MHz
70 MHz
10 MHz
20 MHz
70 MHz
70 MHz
150 MHz
250 MHz
f = 10 MHz
f = 10 MHz, +In
f = 10 MHz, In
NTSC, G = +2, RL = 150
NTSC, G = +2, RL = 37.5
NTSC, G = +2, RL = 150
NTSC, G = +2, RL = 37.5

DC PERFORMANCE
Input Offset Voltage

AD8009AR/JRT
Typ
Max

1,000
845
700
350
440
320
75
5,500
10
25
0.725

MHz
MHz
MHz
MHz
MHz
MHz
MHz
V/s
ns
ns
ns

73
66
56
77
75
58
26
18
12
1.9
46
41
0.01
0.02
0.01
0.04

dBc
dBc
dBc
dBc
dBc
dBc
dBm
dBm
dBm
nV/Hz
pA/Hz
pA/Hz
%
%
Degrees
Degrees

2
TMIN to TMAX

Offset Voltage Drift


Input Bias Current
TMIN to TMAX
+Input Bias Voltage
TMIN to TMAX
Open-Loop Transresistance

90
TMIN to TMAX

INPUT CHARACTERISTICS
Input Resistance
Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short-Circuit Current

+Input
Input
+Input
VCM = 2.5

3.7
RL = 10 , PD Package = 0.7 W 150

POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio

50

4
50
75
50
75
250
170

5
7
150
150

mV
mV
V/C
A
A
A
A
k
k
k

pF
V
dB

3.8
175
330

V
mA
mA

14
64

0.03
0.05
0.03
0.08

110
8
2.6
3.8
52

+5
TMIN to TMAX
VS = 4 V to 6 V

Unit

70

6
16
18

V
mA
mA
dB

Specifications subject to change without notice.

REV. F

AD8009
(@ TA = 25C, VS = 5 V, RL = 100 , for R Package: RF = 301  for G = +1, +2,

SPECIFICATIONS R = 200  for G = +10).


F

Model
DYNAMIC PERFORMANCE
3 dB Small Signal Bandwidth, VO = 0.2 V p-p

Large Signal Bandwidth, VO = 2 V p-p


Gain Flatness 0.1 dB, VO = 0.2 V p-p
Slew Rate
Settling Time to 0.1%
Rise and Fall Time
HARMONIC/NOISE PERFORMANCE
Second Harmonic G = +2, VO = 2 V p-p
Third Harmonic

Input Voltage Noise


Input Current Noise

Conditions

Min

Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
Output Voltage Swing
Output Current
Short-Circuit Current
POWER SUPPLY
Operating Range
Quiescent Current
Power Supply Rejection Ratio

630
430
300
365
250
65
2,100
10
25
0.725

MHz
MHz
MHz
MHz
MHz
MHz
V/s
ns
ns
ns

10 MHz
20 MHz
70 MHz
10 MHz
20 MHz
70 MHz
f = 10 MHz
f = 10 MHz, +In
f = 10 MHz, In

74
67
48
76
72
44
1.9
46
41

dBc
dBc
dBc
dBc
dBc
dBc
nV/Hz
pA/Hz
pA/Hz

1
50
50
+Input
Input
+Input
VCM = 1.5 V to 3.5 V

50

RL = 10 , PD Package = 0.7 W

VS = 4.5 V to 5.5 V

64

4
150
150

mV
A
A

110
8
2.6
1.2 to 3.8
52

pF
V
dB

1.1 to 3.9
175
330

V
mA
mA

+5

Specifications subject to change without notice.

REV. F

Unit

G = +1, RF = 301
G = +2
G = +10
G = +2
G = +10
G = +2, RL = 150
G = +2, RL = 150 , 4 V Step
G = +2, RL = 150 , 2 V Step
G = +10, 2 V Step
G = +2, RL = 150 , 4 V Step

DC PERFORMANCE
Input Offset Voltage
Input Bias Current
+Input Bias Voltage
INPUT CHARACTERISTICS
Input Resistance

AD8009AR/JRT
Typ
Max

10
70

6
12

V
mA
dB

AD8009
ABSOLUTE MAXIMUM RATINGS 1

MAXIMUM POWER DISSIPATION

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V


Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . 3.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range R Package . . . . 65C to +125C
Operating Temperature Range (A Grade) . . . 40C to +85C
Operating Temperature Range (J Grade) . . . . . . . 0C to 70C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300C

The maximum power that can be safely dissipated by the AD8009


is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction temperature of 175C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction temperature (150C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.

NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package: JA = 155C/W.
5-Lead SOT-23 Package: JA = 240C/W.

2.0

MAXIMUM POWER DISSIPATION (W)

TJ = 150 C

1.5
8-LEAD SOIC PACKAGE

1.0

0.5
5-LEAD SOT-23 PACKAGE

0
50 40 30 20 10 0 10 20 30 40 50 60
AMBIENT TEMPERATURE (C)

70 80 90

Figure 3. Plot of Maximum Power Dissipation vs.


Temperature
ORDERING GUIDE

Model
AD8009AR
AD8009AR-REEL
AD8009AR-REEL7
AD8009ARZ*
AD8009ARZ-REEL*
AD8009ARZ-REEL7*
AD8009JRT-R2
AD8009JRT-REEL
AD8009JRT-REEL7
AD8009JRTZ-REEL*
AD8009JRTZ-REEL7*
AD8009ACHIPS

Temperature
Range

Package
Description

Package
Option

Branding

40C to +85C
40C to +85C
40C to +85C
40C to +85C
40C to +85C
40C to +85C
0C to 70C
0C to 70C
0C to 70C
0C to 70C
0C to 70C

8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
Die

R-8
R-8
R-8
R-8
R-8
R-8
RT-5
RT-5
RT-5
RT-5
RT-5

HKJ
HKJ
HKJ
HKJ
HKJ

*Z = Pb-free part.

CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. F

Typical Performance CharacteristicsAD8009


3

6.2

6.1

G = +1, R

G = +1, RT

6.0

0
R PACKAGE:
RL = 100
G = +2, R AND RT
VO = 200mV pp
G = +1, +2: RF = 301 G = +10, R AND RT
G = +10: RF = 200
RT PACKAGE:
G = +1: RF = 332
G = +2: RF = 226
G = +10: RF = 191

1
2
3
4
5

G = +2
RF = 301
RL = 150
VO = 200mV p-p

5.8
5.7
5.6
5.5
5.4

6
7

5.9

GAIN FLATNESS (dB)

NORMALIZED GAIN (dB)

5.3
5.2

10

100

1000

10
100
FREQUENCY (MHz)

FREQUENCY (MHz)

TPC 1. Frequency Response; G = +1, +2, +10,


R and RT Packages

TPC 4. Gain Flatness; G = +2

0.4

G = +2
RF = 301
RL = 150
VO = 200mV p-p
VS = 5V

7
0.3

0.2

G = +2
RF = 301
RL = 150
VO AS SHOWN

4
3
2

GAIN FLATNESS (dB)

GAIN (dB)

1000

4V p-p
2V p-p

0.1

0.1

0.2

1
2
1

10
100
FREQUENCY (MHz)

0.3

1000

TPC 2. Large Signal Frequency Response; G = +2

10

100
FREQUENCY (MHz)

1000

10000

TPC 5. Gain Flatness; G = +2; VS = 5 V

22

21

+85C

20

40C
19

40C
G = +2
RF = 301
RL = 150
VO = 2V pp

4
3
2

GAIN (dB)

GAIN (dB)

+85C

17

2V p-p

4V p-p

16

15

14

13
12

2
1

10
100
FREQUENCY (MHz)

1000

TPC 3. Large Signal Frequency Response vs.


Temperature; G = +2

REV. F

G = +10
RF = 200
RL = 100
VO AS SHOWN

18

10
100
FREQUENCY (MHz)

1000

TPC 6. Large Signal Frequency Response; G = +10

AD8009
22

35

21

40

20

45
70MHz

GAIN (dB)

40C

G = +10
RF = 200
RL = 100
VO = 2V p-p

18
17

DISTORTION (dBc)

50

19

+85C

16
15

55

65
200

70

22.1

50
POUT
50

50

80

13

85
10 8

12
1

10
100
FREQUENCY (MHz)

1000

10

12

14

POUT (dBm)

TPC 10. Second Harmonic Distortion vs. POUT; (G = +10)

TPC 7. Large Signal Frequency Response vs.


Temperature; G = +10
30

0.02

DIFF GAIN (%)

G=2
RF = 301
VO = 2V p-p

40

SECOND,
100 LOAD

50
60

70
THIRD,
100 LOAD

80

THIRD,
150 LOAD
90
100
1

10
FREQUENCY RESPONSE (MHz)

70

G = +2
RF = 301

0.01

RL = 150

0.00
0.01
0.02

SECOND,
150 LOAD

DIFF PHASE (Degrees)

DISTORTION (dBc)

5MHz

60

75

14

RL = 37.5
0

100

IRE

0.10
G = +2
0.05 RF = 301

RL = 37.5

0.00
RL = 150
0.05
0.10

TPC 8. Distortion vs. Frequency; G = +2

100

IRE

TPC 11. Differential Gain and Phase

20

30
G = +2
RF = 301
RL = 100
VO = 2V p-p
VS = 5V

G = +10
RF = 200
RL = 100
VO = 2V p-p

35

THIRD

40
45
DISTORTION (dBc)

30
DISTORTION (dBc)

250MHz

40
SECOND
50

60

SECOND

50
55
60
65

THIRD

70

70

75
80

80
1

10

100

200

10

70

FREQUENCY (MHz)

FREQUENCY (MHz)

TPC 12. Distortion vs. Frequency; G = +10

TPC 9. Distortion vs. Frequency; G = +2; VS = 5 V

REV. F

AD8009
10

35
40

G = +2
RF = 301
RL = 100
100mV p-p ON TOP OF VS

45

DISTORTION (dBc)

10

250MHz

50

70MHz

55

PSRR (dB)

20

60
65
70

5MHz

PSRR

30

+PSRR

40

75
200

80

50

22.1

50 P
OUT

85

95
10

60

50

50

90

10

12

70
0.03 0.1

14

TPC 13. Third Harmonic Distortion vs. POUT; (G = +10)

500

100

TPC 16. PSRR vs. Frequency

300

50
200

250

22.1

50 P
OUT

40

INPUT CURRENT (pA/ Hz)

45
INTERCEPT POINT (dBm)

10

FREQUENCY (MHz)

POUT (dBm)

50
50

35
30
25
20

200

150

100
NONINVERTING CURRENT
50

15

INVERTING CURRENT
0

10
10

100
FREQUENCY (MHz)

250

10

100

1M

1M

10M

100M 250M

10
301

PHASE

1k

80

VO
154

25

CMRR (dB)

RL = 100

301
VIN =
200mV p-p

20

40

GAIN

PHASE (Degrees)

TRANSRESISTANCE ()

100k

TPC 17. Current Noise vs. Frequency

15

10k

10k

FREQUENCY (Hz)

TPC 14. Two Tone, Third Order IMD Intercept vs.


Frequency; G = +10

100k

1k

154

100

30
35
40
45

120

50
55
100
0.01

0.1

10

100

160
1000

60
1

FREQUENCY (MHz)

TPC 15. Transresistance and Phase vs. Frequency

REV. F

10
100
FREQUENCY (MHz)

TPC 18. CMRR vs. Frequency

1000

AD8009
2.0

G = +2
RF = 301

1.8

10
1.6

(VSWR)

OUTPUT RESISTANCE ()

100

1.4

1.2

0.1

1.0

0.01
0.03 0.1

10

100

0
0.1

500

10
FREQUENCY (MHz)

FREQUENCY (MHz)

TPC 19. Output Resistance vs. Frequency

100

500

TPC 22. Input VSWR; G = +10

10

20

16
POUT MAX (dBm)

INPUT VOLTAGE NOISE (nV/ Hz)

18
8

G = +2
RF = 301

14
12
G = +10
RF = 200

10
8
RF

6
2

RG

50

4
50

2
0
10

POUT

50

0
100

1k

10k

100k

1M

10M

100M 250M

10

100

250

FREQUENCY (MHz)

FREQUENCY (Hz)

TPC 20. Voltage Noise vs. Frequency

TPC 23. Maximum Output Power vs. Frequency

25

20
30
G = +10
RF = 200

20

50

15
G = +10
RF = 301
RL = 100

10

S12 (dB)

NOISE FIGURE (dB)

40

60
70
80

90
0

10
100
SOURCE RESISTANCE ()

500

TPC 21. Noise Figure

10
100
FREQUENCY (MHz)

1000

TPC 24. Reverse Isolation (S12); G = +10

REV. F

AD8009
2.2
G = +2
RF = 301
RL = 150
VO = 2V p-p

CCOMP

2.0
49.9

49.9

1.8
(VSWR)

200

1.6

22.1

1.4
CCOMP = 0pF
1.2
CCOMP = 3pF
1.0

500mV

0
0.1

10
FREQUENCY (MHz)

100

500

TPC 25. Output VSWR; G = +10

VOUT

100
90

1ns

TPC 28. 2 V Transient Response; G = +2

G = +2
RF = 301
RL = 150
VO = 4V p-p

G = +10
RF = 200
RL = 100

VIN = 2VSTEP

10
0%

2V

2V

250ns

1V

TPC 26. Overdrive Recovery; G = +10

TPC 29. 4 V Transient Response; G = +2

G = +10
RF = 200
RL = 100
VO = 200mV p-p

G = +2
RF = 301
RL = 150
VO = 200mV p-p

50mV

50mV

1ns

TPC 27. 2 V Transient Response; G = +2

REV. F

1.5ns

2ns

TPC 30. Small Signal Transient Response; G = +10

AD8009
G = +10
RF = 200
RL = 100
VO = 2V p-p

V
O

2ns

50mV

TPC 31. 2 V Transient Response; G = +10

1ns

TPC 34. 2 V Transient Response; VS = 5 V; G = +2

G = +10
RF = 200
RL = 100
VO = 4V p-p

12
CA = 2pF
3dB/div

6
CA = 1pF
1dB/div

GAIN (dB)

0
CA = 0pF
1dB/div

VOUT = 200mV pp
VIN

100

499

3ns

1V

CA

VOUT

50

12

499

15

1
1

TPC 32. 4 V Transient Response; G = +10

GAIN (dB)

500mV

VS = 5V
G = +2
RF = 301
RL = 150
VO = 200mV p-p

10

1000

100
FREQUENCY (MHz)

TPC 35. Small Signal Frequency Response vs.


Parasitic Capacitance

CA = 2pF

CA

CA = 1pF

V
O

VIN

VOUT

50
499

100

499
VOUT = 200mV pp
VS = 5V
CA = 0pF

50mV

VS = 5V
G = +2
RF = 301
RL = 150
VO = 200mV p-p

1ns

40mV

TPC 33. Small Signal Transient Response;


VS = 5 V; G = +2

1.5ns

TPC 36. Small Signal Pulse Response vs.


Parasitic Capacitance

10

REV. F

AD8009
0

HP8753D

AD8009
G=2
RF = RG= 301
DRIVING
WAVETEK 5201
TUNABLE BPF
fC = 50MHz

10
20

Z IN = 50

Z OUT = 50

30
0.001F

3
49.9

0.1F

REJECTION (dB)

+5V
10F

AD8009

49.9

WAVETEK 5201
BPF

301

5V

60

80
90

0.001F

0.1F

10F
+

TPC 37. AD8009 Driving a Band-Pass RF Filter

APPLICATIONS

All current feedback op amps are affected by stray capacitance


on their INPUT. TPCs 35 and 36 illustrate the AD8009s
response to such capacitance.
TPC 35 shows the bandwidth can be extended by placing a
capacitor in parallel with the gain resistor. The small signal pulse
response corresponding to such an increase in capacitance/bandwidth is shown in TPC 36.
As a practical consideration, the higher the capacitance on the
INPUT to GND, the higher RF needs to be to minimize
peaking/ringing.
RF Filter Driver

CENTER 50.000 MHz

SPAN 80.000 MHz

TPC 38. Frequency Response of Band-Pass Filter Circuit

TPC 37 shows a circuit for driving and measuring the frequency


response of a filter, a Wavetek 5201 tunable band-pass filter that
is tuned to a 50 MHz center frequency. The HP8753D network
provides a stimulus signal for the measurement. The analyzer has
a 50 source impedance that drives a cable that is terminated in
50 at the high impedance noninverting input of the AD8009.
The AD8009 is set at a gain of +2. The series 50 resistor at the
output, along with the 50 termination provided by the filter and
its termination, yield an overall unity gain for the measured
path. The frequency response plot of TPC 38 shows the circuit
to have an insertion loss of 1.3 dB in the pass band and about
75 dB rejection in the stop band.

The output drive capability, wide bandwidth, and low distortion


of the AD8009 are well suited for creating gain blocks that can
drive RF filters. Many of these filters require that the input be
driven by a 50 source, while the output must be terminated in
50 for the filters to exhibit their specified frequency response.

REV. F

50

70

301

40

11

AD8009
PRIMARY MONITOR

75 COAX
IOUTR
75

RED

75

75

GREEN

75

75

BLUE

75

ADV7160/
ADV7162
IOUTG

IOUTB

5V
+
0.1F

10F

AD8009
2

75

ADDITIONAL MONITOR

75 COAX

RED

75

301
301

0.1F
5V

10F

3
6

AD8009

75

GREEN

75

BLUE

75

301
301
3
6

AD8009

75

301

301

Figure 4. Driving an Additional High Resolution Monitor Using Three AD8009s

RGB Monitor Driver

High resolution computer monitors require very high full power


bandwidth signals to maximize their display resolution. The
RGB signals that drive these monitors are generally provided by
a current-out RAMDAC that can directly drive a 75 doubly
terminated line.
There are times when the same output wants to be delivered to
additional monitors. The termination provided internally by
each monitor prohibits the ability to simply connect a second
monitor in parallel with the first. Additional buffering must be
provided.
Figure 4 shows a connection diagram for two high resolution
monitors being driven by an ADV7160 or ADV7162, a 220 MHz
(Megapixel per second) triple RAMDAC. This pixel rate
requires a driver whose full power bandwidth is at least half the
pixel rate or 110 MHz. This is to provide good resolution for a
worst-case signal that swings between zero scale and full scale
on adjacent pixels.

The primary monitor is connected in the conventional fashion


with a 75 termination to ground at each end of the 75
cable. Sometimes this configuration is called doubly terminated and is used when the driver is a high output impedance
current source.
For the additional monitor, each of the RGB signals close to the
RAMDAC output is applied to a high input impedance, noninverting input of an AD8009 that is configured for a gain of +2. The
outputs each drive a series 75 resistor, cable, and termination
resistor in the monitor that divides the output signal by two, thus
providing an overall unity gain. This scheme is referred to as
back termination and is used when the driver is a low output
impedance voltage source. Back termination requires that the
voltage of the signal be double the value that the monitor sees.
Double termination requires that the output current be double the
value that flows in the monitor termination.

12

REV. F

AD8009
Driving a Capacitive Load

A capacitive load, like that presented by some A/D converters,


can sometimes be a challenge for an op amp to drive depending
on the architecture of the op amp. Most of the problem is caused
by the pole created by the output impedance of the op amp and
the capacitor that is driven. This creates extra phase shift that
can eventually cause the op amp to become unstable.
One way to prevent instability and improve settling time when
driving a capacitor is to insert a resistor in series between the
op amp output and the capacitor. The feedback resistor is still
connected directly to the output of the op amp, while the series
resistor provides some isolation of the capacitive load from the
op amp output.
+5V
G = +2: RF = 301 = RG
G = +10: RF = 200, RG = 22.1

0.001F

3
RT

49.9

RG

0.1F

Figure 5 shows such a circuit with an AD8009 driving a 50 pF


load. With RS = 0, the AD8009 circuit will be unstable. For a
gain of +2 and +10, it was found experimentally that setting RS
to 42.2 will minimize the 0.1% settling time with a 2 V step at
the output. The 0.1% settling time was measured to be 40 ns with
this circuit.
For smaller capacitive loads, a smaller RS will yield optimal
settling time, while a larger RS will be required for larger capacitive
loads. Of course, a larger capacitance will always require more
time for settling to a given accuracy than a smaller one, and this
will be lengthened by the increase in RS required. At best, a
given RC combination will require about seven time constants
by itself to settle to 0.1%, so a limit will be reached where too
large a capacitance cannot be driven by a given op amp and still
meet the systems required settling time specification.

10F

AD8009
2

6 2VSTEP

RS
CL

50pF

RF
0.001F
5V

0.1F

10F

Figure 5. Capacitive Load Drive Circuit

REV. F

13

AD8009
OUTLINE DIMENSIONS
8-Lead Standard Small Outline Package [SOIC]
(R-8)
Dimensions shown in millimeters and (inches)

5.00 (0.1968)
4.80 (0.1890)

4.00 (0.1574)
3.80 (0.1497)

6.20 (0.2440)
5.80 (0.2284)

1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)

0.51 (0.0201)
0.31 (0.0122)

COPLANARITY
SEATING
0.10
PLANE

0.50 (0.0196)
 45
0.25 (0.0099)

1.75 (0.0688)
1.35 (0.0532)

8
0.25 (0.0098) 0 1.27 (0.0500)
0.40 (0.0157)
0.17 (0.0067)

COMPLIANT TO JEDEC STANDARDS MS-012AA


CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN

5-Lead Small Outline Transistor Package [SOT-23]


(RT-5)
Dimensions shown in millimeters
2.90 BSC

2.80 BSC

1.60 BSC
1

PIN 1
0.95 BSC
1.30
1.15
0.90

1.90
BSC

1.45 MAX

0.15 MAX

0.50
0.30

SEATING
PLANE

0.22
0.08
10
5
0

0.60
0.45
0.30

COMPLIANT TO JEDEC STANDARDS MO-178AA

14

REV. F

AD8009
Revision History
Location

Page

9/04Data Sheet changed from REV. E to REV. F.

Changes to ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


Change to TPC 37 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3/03Data Sheet changed from REV. D to REV. E.

Updated Data Sheet Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Universal


Changes to FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Changes to Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Changes to SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Deleted AD8009EB from ORDERING GUIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Inserted new TPC 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Inserted new TPC 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Inserted new TPC 12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Inserted new TPCs 33 and 34 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Updated OUTLINE DIMENSIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

REV. F

15

16
C0101109/04(F)

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