NDF06N60Z

N-Channel Power MOSFET

600 V, 1.2 W
Features

Low ON Resistance
Low Gate Charge
ESD DiodeProtected Gate
100% Avalanche Tested
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant

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VDSS (@ TJmax)

RDS(ON) (MAX) @ 3 A

650 V

1.2

ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)

Symbol

Value

Unit

VDSS

600

Continuous Drain Current, RqJC (Note 1)

ID

7.1

Continuous Drain Current

TA = 100C, RqJC (Note 1)

ID

4.5

IDM

28

Rating
DraintoSource Voltage

Pulsed Drain Current,

VGS @ 10 V
Power Dissipation, RqJC

PD

35

GatetoSource Voltage

VGS

30

Single Pulse Avalanche Energy, L = 6.3 mH,

ID = 6.0 A

EAS

113

mJ

ESD (HBM) (JESD22A114)

Vesd

3000

RMS Isolation Voltage

(t = 0.3 sec., R.H. 30%,
TA = 25C) (Figure 13)

VISO

4500

Peak Diode Recovery (Note 2)

dv/dt

4.5

V/ns

MOSFET dV/dt

dV/dt

60

V/ns

Continuous Source Current (Body Diode)

IS

6.0

Maximum Temperature for Soldering Leads

TL

260

TJ, Tstg

55 to
150

Operating Junction and

Storage Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 6.0 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150C

Semiconductor Components Industries, LLC, 2015

January, 2015 Rev. 8

NChannel
D (2)

G (1)

S (3)

NDF06N60ZG,
NDF06N60ZH
TO220FP
CASE 221AH

ORDERING AND MARKING INFORMATION

See detailed ordering, marking and shipping information on
page 6 of this data sheet.

Publication Order Number:

NDF06N60Z/D

NDF06N60Z
THERMAL RESISTANCE
Symbol

Value

Unit

JunctiontoCase (Drain)

Parameter

RqJC

3.6

C/W

JunctiontoAmbient Steady State (Note 3)

RqJA

50

3. Insertion mounted

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic

Test Conditions

Symbol

Min

DraintoSource Breakdown Voltage

VGS = 0 V, ID = 1 mA

BVDSS

600

Breakdown Voltage Temperature Coefficient

Reference to 25C,
ID = 1 mA

DBVDSS/
DTJ

Typ

Max

Unit

OFF CHARACTERISTICS

DraintoSource Leakage Current

V
0.6

V/C

IDSS

VGS = 20 V

IGSS

10

mA

Static DraintoSource
OnResistance

VGS = 10 V, ID = 3.0 A

RDS(on)

0.98

1.2

Gate Threshold Voltage

VDS = VGS, ID = 100 mA

VGS(th)

3.9

4.5

VDS = 15 V, ID = 3.0 A

gFS

VDS = 600 V, VGS = 0 V

GatetoSource Forward Leakage

25C
150C

mA

50

ON CHARACTERISTICS (Note 4)

Forward Transconductance

3.0

5.0

DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)

Ciss

738

923

1107

Coss

90

106

125

Crss

15

23

30

Total Gate Charge (Note 5)

Qg

15.5

31

47

GatetoSource Charge (Note 5)

Qgs

6.3

9.5

Qgd

17

24.5

Output Capacitance (Note 5)

Reverse Transfer Capacitance
(Note 5)

GatetoDrain (Miller) Charge

(Note 5)

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

VDD = 300 V, ID = 6.0 A,

VGS = 10 V

pF

nC

Plateau Voltage

VGP

6.4

Gate Resistance

Rg

3.2

td(on)

13

ns

tr

17

td(off)

30

tf

28

RESISTIVE SWITCHING CHARACTERISTICS

TurnOn Delay Time
Rise Time
TurnOff Delay Time

VDD = 300 V, ID = 6.0 A,

VGS = 10 V, RG = 5

Fall Time
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25C unless otherwise noted)
Diode Forward Voltage

IS = 6.0 A, VGS = 0 V

VSD

Reverse Recovery Time

VGS = 0 V, VDD = 30 V
IS = 6.0 A, di/dt = 100 A/ms

trr

338

ns

Qrr

2.0

mC

Reverse Recovery Charge

1.6

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width 380 ms, Duty Cycle 2%.
5. Guaranteed by design.

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2

NDF06N60Z
TYPICAL CHARACTERISTICS

10

12

6.8 V

VDS 30 V

6.6 V

VGS = 15 V

6.4 V

6.2 V
6.0 V

5.8 V
2
0

RDS(on), DRAINTOSOURCE RESISTANCE (W)

10 V

7V

5.6 V
0

10

15

20

8
6

25

TJ = 150C

4
2

TJ = 55C
3

Figure 1. OnRegion Characteristics

Figure 2. Transfer Characteristics

1.5

0.5

10

VGS (V)

1.75
TJ = 25C
1.5
1.25
VGS = 10 V
1
0.75
0.5

10

12

ID, DRAIN CURRENT (A)

Figure 3. OnResistance vs. VGS

Figure 4. OnResistance vs. Drain Current and

Gate Voltage

2.6

10,000
VGS = 0 V

ID = 3 A
VGS = 10 V
IDSS, LEAKAGE (nA)

RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

VGS, GATETOSOURCE VOLTAGE (V)

ID = 3 A
TJ = 25C

2.2

TJ = 25C

VDS, DRAINTOSOURCE VOLTAGE (V)

10

RDS(on), DRAINTOSOURCE RESISTANCE (W)

ID, DRAIN CURRENT (A)

TJ = 25C

ID, DRAIN CURRENT (A)

12

1.8
1.4
1.0

TJ = 150C

1000

100

0.6
TJ = 100C
0.2
50

25

25

50

75

100

125

150

10

100

200

300

400

500

TJ, JUNCTION TEMPERATURE (C)

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 5. OnResistance Variation with

Temperature

Figure 6. DraintoSource Leakage Current

vs. Voltage

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3

600

NDF06N60Z
TYPICAL CHARACTERISTICS

VGS, GATETOSOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

VGS = 0 V
TJ = 25C
f = 1 MHz

1500

Crss
0

VDS

50

100

150

200

200
Qgs

VGS

100
TJ = 25C
ID = 6 A
0

10

15

20

25

30

VDS, DRAINTOSOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. GatetoSource and

DraintoSource Voltage vs. Total Charge

0
35

IS, SOURCE CURRENT (A)

6
VDD = 300 V
ID = 6 A
VGS = 10 V

td(off)

100

tr
tf
td(on)

10

10

VGS = 0 V
TJ = 25C

5
4
3
2
1
0
0.4

100

0.5

0.6

0.7

0.8

0.9

1.0

RG, GATE RESISTANCE (W)

VSD, SOURCETODRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

100

ID, DRAIN CURRENT (A)

t, TIME (ns)

Qgd

1000

300

10

Coss

500

QT

15

Ciss

1000

400

VDS, DRAINTOSOURCE VOLTAGE (V)

20

2000

10

VGS 30 V
Single Pulse
TC = 25C

100 ms
1 ms
10 ms

10 ms

dc
1

0.1

0.01
0.1

RDS(on) Limit
Thermal Limit
Package Limit
1

10

100

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area for NDF06N60Z

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4

1000

NDF06N60Z
TYPICAL CHARACTERISTICS
10

R(t) (C/W)

50% (DUTY CYCLE)

1.0

20%
10%
5.0%
2.0%

0.1

1.0%
RqJC = 3.6C/W
Steady State

SINGLE PULSE
0.01
0.000001

0.00001

0.0001

0.001

0.1

0.01

1.0

10

PULSE TIME (s)

Figure 12. Thermal Impedance for NDF06N60Z

LEADS

HEATSINK
0.110 MIN

Figure 13. Mounting Position for Isolation Test

Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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5

100

1000

NDF06N60Z
ORDERING INFORMATION
Package

Shipping

NDF06N60ZG

TO220FP
(PbFree, HalogenFree)

50 Units / Rail

NDF06N60ZH

TO220FP
(PbFree, HalogenFree)

50 Units / Rail

Order Number

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

MARKING DIAGRAMS

NDF06N60ZG
or
NDF06N60ZH
AYWW
Gate

Source

Drain
TO220FP
A
Y
WW
G, H

= Location Code
= Year
= Work Week
= PbFree, HalogenFree Package

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6

NDF06N60Z
PACKAGE DIMENSIONS
TO220 FULLPACK, 3LEAD
CASE 221AH
ISSUE F
A

B
P

E/2

0.14
Q

B A

H1

A1

C
NOTE 3

1 2 3

L1

3X
3X

SEATING
PLANE

b2

b
0.25

B A

A2

SIDE VIEW

FRONT VIEW

SECTION DD

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q

MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20

A
NOTE 6

NOTE 6

H1
D

SECTION AA

ALTERNATE CONSTRUCTION

ON Semiconductor and the

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NDF06N60Z/D