2SC5250

Silicon NPN Triple Diffused Planar

Application

TO3PFM (N)

Character display horizontal deflection output

Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf = 0.2 sec(typ)
Built-in damper diode type
Isolated package
TO-3PFM (N)

1
E

1. Base
2. Collector
3. Emitter

2
3

Absolute Maximum Ratings (Ta = 25C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

VCES

1500

Emitter to base voltage

VEBO

Collector current

IC

Collector peak current

ic(peak)

16

Collector power dissipation

PC*1

50

Junction temperature

Tj

150

Storage temperature

Tstg

55 to +150

Diode current

ID

Note: 1. Value at Tc = 25C

2SC5250
Electrical Characteristics (Ta = 25C)
Item

Symbol

Min

Typ

Max

Unit

Test conditions

Emitter to base
breakdown voltage

V(BR)EBO

IE = 400 mA,
IC = 0

Collector cutoff current

ICES

500

VCE = 1500 V,
RBE = 0

DC current transfer ratio

hFE1

25

VCE = 5 V,
IC = 1 A

DC current transfer ratio

hFE2

VCE = 5 V,
IC = 5 A

Collector to emitter
saturation voltage

VCE(sat)

IC = 5 A,
IB = 1.25 A

Base to emitter
saturation voltage

VBE(sat)

1.5

IC = 5 A,
IB = 1.25 A

Forward voltage of damper

diode

VECF

IF = 8 A,

Fall time

tf

0.2

0.4

sec

ICP = 5 A, IB1 = 1 A,
fH=31.5kHz

Area of Safe Operation

25
I C (A)

80

60

Collector Current

Collector Power Dissipation

Pc (W)

Collector Power Dissipation

vs. Case Temperature

40

20

50
100
Case Temperature

150
Tc (C)

200

20

15

(400 V, 16 A)

10
(600 V, 6 A)
5 I
B2 = 1 A
L = 180 H
duty 1%
0

(800 V, 3 A)
(1500 V, 0.5 mA)

800
1200 1600 2000
400
Collector to Emitter Voltage V CE (V)

2SC5250

DC Current Transfer Ratio

vs. Collector Current

Typical Output Characteristics

Collector Current

100

A 0.9 A
0.8 A
0.7 A
0.6 A
0.5 A
0.4 A
0.3 A

2.5

h FE

I C (A)

1.0

DC Current Transfer Ratio

5.0

0.2 A

0.1 A
Tc = 25 C
IB=0

5
10
Collector to Emitter Voltage V CE (V)

50
75 C
20
10
5
Tc = 25 C
2
1
0.1

Collector to Emitter Saturation Voltage

vs. Collector Current
5

1
Tc = 25 C
25 C

0.05
0.1

5
2

2
5
I C (A)

10

Tc = 25C
25 C

75 C

0.2

75 C
0.2
0.5
1
2
5
Collector Current I C (A)

I C/ I B= 4

0.5

0.2

0.1

0.2
0.5
1
Collector Current

10
IC / I B= 4

0.5

VCE = 5 V

Base to Emitter Saturation Voltage

vs. Collector Current
Base to Emitter Saturetion Voltage
V BE(sat) (V)

Collector to Emitter Saturation Voltage

V CE(sat) (V)

10

25 C

10

0.1

0.2
0.5
1
2
5
Collector Current I C (A)

10

2SC5250

Collector to Emitter Saturation Voltage

vs. Base Current

Fall Time vs. Base Current

1.0

Tc = 25 C
0.8

I C= 3 A 4 A

Fall Time t f (s)

Collector to Emitter Saturation Voltage

V CE(sat) (V)

10

5A

0.6

0.4

0.2

0
0.1

0
0.2

0.5
1
Base Current

10

I B (A)

Storage Time vs. Base Current

10

Storage Time t stg (s)

I CP = 5 A
f H = 31.5 kHz

I CP = 5 A
f H = 31.5 kHz

0.4

0.8

1.2

1.6

Base Current I B1 (A)

2.0

0.4

0.8

1.2

1.6

Base Current I B1 (A)

2.0

2SC5250
Hitachi test circuit

D.U.T

10

100

10 mH

0.97 H

0.01 F

31.5 s

0.24 mH

( ICP = 5 A, fH = 31.5 kHz )

15 s

6800 pF

VCC=110V

T : IN 150 mH
OUT 120 H
LB 3.2 H

3.2

5.8 Max

5.0

2.7

19.9 0.3

16.0 Max

5.0 0.3

Package Outline

4.0

1.4 Max
1.4 Max

3.2

21.0 0.5

2.6

1.6

0.9
0.66 +0.2
0.1
5.45 0.5

5.45 0.5

+0.2
0.1