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CHAPTER 2:
SEMICONDUCTOR
DEVICES

0
Understand
the structure, schematic, symbol and phyrdows@yahoo.com
properties of SCR,
DIAK, TRIAK, FET, MOSFET dan UJT

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2.0

INTRODUCTION

Previous class discussed semiconductor devices are very popular in

electronic circuits. In addition to the diodes and transistors, there are a number
of semiconductor devices used in electronic circuits. Among them are the SCR,
DIAC, TRIAC, FET, MOSFET and UJT.

2.1

SCR
2.1.1 Introduction
SCR is a 4-layer devices (thyristor), which has three terminals, namely
the anode, cathode and the gate. Basically, the same as the SCR rectifier
diode that has an element of control.
SCR is widely used as switching devices in power control applications.
The basic structure of the SCR is as shown in figure 4.1 and schematic
symbol for SCR is as shown in figure 4.2.gure 2.1 shows how the described
merger of N type and P-type material.

Figure 4.1 : SCR structure

Figure 4.2 : SCR symbol

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2.1.2 IV CURVE FOR SCR

Figure 4.3 shows the IV curve for SCR.

IF

Arus Penahan

IG2>IG1

IG1=0

SCRON

Voltan Pecah Tebat

SCR OFF
VBRF2 VBRF1

VR
Arus Sekat Songsang

VF

Arus Sekat Depan

IR

SCR characteristic curve is very similar to the normal diode

characteristic curve unless there are some areas in the early stages that
reflect the current that momentarily jammed.
During the lame front (VF), when IG = 0, no anode current (IA)
delivered by the SCR was but little leakage current. Although VF is raised, the
IA still missing, but a slight increase in leakage current. The current level is
called Flow Block Future (Forward Blocking Current).
With an IG is 0 and VF continues to increase, it will come to a voltage
value where IA suddenly flowing and rising rapidly. VF value at the time cited
in particular the breakdown voltages Future (Forward breakover voltage,
VBRF1). VBRF1 is when IG = 0.
If there IG (due to a positive voltage to the gate), which in the figure is
labeled as IG2, the breakdown voltage events will occur much earlier
(VBRF2). VBRF point can be lowered again by adding the IG. And so on until
the IG adjusted to a high enough value, the SCR will act like a normal diode.
When reverse biased SCR (VR), SCR does not conduct unless a
leakage current or reverse current lockout. If VR is too high, it will be up to the
extent of reverse breakdown voltage. SCR acts like a normal diode in reverse
bias condition.

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Retaining the current (Holding Current) is the level where the current
SCR moved from blockage (OFF) to conduction (ON).
When forward biased, the SCR has two operating conditions of a state
of "OFF" and "ON" (see figure 4.3). During a state of "OFF", SCR acts like an
open circuit while the current state of "ON" SCR acts like a closed circuit.
During reverse bias, SCR acts as an open circuit. Figure 4.4 shows the
bias conditions SCR current and reverse bias.

Figure 4.4 : SCR condition when in forward bias and reverse bias.
2.1.3 SCR OPERATION
As normal diode, allowing current to flow through the SCR, the anode
must be given the bias voltage. However, for SCR, the forward bias voltage
can not yet conduct. Only after the positive gate voltage given moment (pulse)
with a magnitude sufficient, then occurred the current flow from the anode to
the cathode.
Once the SCR operation, a positive pulse voltage on the gate was no
longer needed, get lost power control. Despite the positive pulse is then
removed, SCR can still continue to conduct high currents without interruption.

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SCR operation can only be stopped in several ways, among which are
the following: -

2.2

decided SCR circuit current path, for example by placing the device

on the circuit breaker anywhere in the current path.

forestall the anode and cathode.
positive shut off the supply voltage at the anode.
change the polarity of the voltage to the anode becomes negative.

TRIAC
2.2.1 INTRODUCTION
TRIAC is a 5 layer device that can conduct current in both directions.
TRIAC can also get triggered at the firing voltage is positive or negative.
As SCR, the TRIAC is also a 3 terminal device. The difference is that
SCR conducts only one direction but the TRIAC bidirectional current flow.
TRIAC can be likened to two SCR connected in parallel and opposite
directions as shown in Figure 4.5. Due to the anode of the SCR 1 is
connected to the cathode of the SCR 2, then the TRIAC terminal labeled MT1
(main terminal 1) and MT2 (main terminal 2). Terminal gate still in use
because the TRIAC gate terminal SCR 1 and SCR 2 listed.
Figure 4.6 shows the structure and the schematic symbol for the
TRIAC.

Figure 4.5 : TRIAC equivalent circuit using SCR.

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Figure 4.6: Structure and schematic symbol for TRIAC.

4.2.2 IV CURVE FOR TRIAC
Figure 4.7 shows the IV curve for TRIAC.

Figure 4.7: IV characteristic curve for TRIAC.

TRIAC characteristic curve, very similar to the SCR characteristic curve
except during reverse bias.

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During reverse bias, the arc is equal to the arc during the lame but in
opposite directions. Other features are similar to the features of SCR
characteristic curve. For example, the breakdown voltage decreases as the
gate current increases.
2.3

DIAC
2.3.1 INTRODUCTION
To simplify our discussion, triac, DIAC is the same as that does not
have a terminal gate. Therefore DIAC is a device that is labeled 2 terminal
MT1 (main terminal 1) and MT2 (main terminal 2) only. Figure 4.8 shows the
schematic symbol for a DIAC.
DIAC diodes can also be thought of as having four layers. Figure 4.9
shows the structure of the DIAC. The difference is that the diode current
flowing in one direction but DIAC conduct in both directions. When MT1
positive, the current path is through the P2-N2-P1-N1. Conversely, if the MT2
is positive, the current path is through the P1-P2-N2-N3.

Figure 4.8: DIAC schematic symbol.

Figure 4.9: DIAC structure.

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2.3.2 IV CURVE FOR DIAC

Figure 4.10 shows the IV curve for a DIAC.

Figure 4.10: IV curve for DIAC.

Characteristic curves become almost equal to the characteristic curve
of the TRIAC, except for features not get there.
Unlike the SCR and triac, diac will only operate when the voltage
across it exceeds the breakdown voltage. DIAC not get that can reduce the
breakdown voltage.
DIAC can conduct in both directions. Thus the arc during current DIAC
mark in opposite directions are the same. (See Figure 4.10)

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QUESTION
1. Draw the structure and the schematic symbol for: i. SCR
ii. Ripple
iii. DIAC
2. State the TWO (2) conditions for operating the SCR
3. State the two conditions to turn off the SCR.
4. Name the terminals of the triac.
5. Can the terminal gate for triggering the triac is triggered with negative voltage?
6. In the range where the diac usually begins to conduct?

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ANSWER
1.

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2. The two conditions for operating the SCR are: i) forward bias voltage across the anode and cathode
ii) given the positive triggering voltage at the gate terminal.
3. The two conditions to turn off SCR are: i) disconnect the current path to SCR
ii) circuited anode and cathode
4. triac terminals is: i) The main terminal 1 (MT1)
ii) the main Terminal 2 (MT2)
iii) Get
5. Can
6. DIAC usually begins to conduct when the voltage across the diac exceeds the
breakdown voltage.

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2.4

FIELD EFFECT TRANSISTOR (FET)

2.4.1 INTRODUCTION
Transistor learned in the past is in the category of bipolar transistor,
which includes both current-carrying electrons and hol. The transistor also fall
within the types of components or devices regulated current (current
controlled device).
Another category of transistor is the transistor "unipolar" that which
only involves one of the majority current carriers. One transistor "unipolar" is
frequently used Field Effect Transistor (Field Effect Transistor) or simply called
FET. It is a component or the voltage-controlled device (voltage controlled
device).
FET is composed of two categories JFET (Junction FET) and MOSFET
(metal-oxide semiconductor FET). In the input 4.4, we discuss discuss the
JFET and MOSFET inputs 4.5.
2.4.2 JFET
Figure 4.11 shows the structure of the FET. It is built up of a bar of
semiconductor material of type N which issued the element ends or legs only
named source (Source) and another named Ditch (Drain). In the middle of the
bar there are two P-type material which is opposite, and it issued a Slimen
named Gate (Gate). For convenience, sometimes the letters S, D and G will
be used as an abbreviation for the source, drain and gate.
As the bar is used between the source and drain of the semiconductor
material is N type, the FET is known as channel FET N. Figure 4.11 shows a
schematic drawing symbols him. Note that the arrow is pointing to the door.

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Figure 4.11: Structure and schematic symbol N-channel FET.

One type FET channel FET again is P. Figure 4.12 shows the building's
structure, in which the bar is used is P-type material and the middle-middle
two N-type material which is opposite. However, there is no difference in the
names of elements. Only sedikti changes to the schematic drawing symbols
as shown in Figure 4.12, which is the arrow pointing to the door outside.

Figure 4.12: Structure and schematic symbol for P-channel FET.

For easy considering the schematic symbol both of this type, thought
only that which is appointed by the arrow is the type N. If the arrow is pointing
to, then it is designated to channel N-type material.
If the arrow is pointing to the outside, it is designated N-type material to
the door.
Note also that the structures in the diagram between the material for
the channel and gate materials for which there are listings PN has the effects
of depreciation and the existence of the barrier voltage.
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2.4.3 COMPARISON BETWEEN JFET AND DWIPOLAR TRANSISTOR

If the material sense, not many significant differences between the two
types of transistors, but both are quite similar. Without reference to an
identification number and manual, is quite difficult to distinguish. JFET, bipolar
transistor as usual, has three legs.
In terms of its use in electronic circuits, may also serve as a JFET
amplifier. Its connections and wiring are not much different. JFET, as well as
ordinary transistor, is connected with the common source configuration, in
which the gate-source circuit input terminal and a drain-source circuit to the
output terminal.
However, in terms of the principles and characteristics, the difference
between JFET with ordinary bipolar transistor remain, among which are:

JFET-common source configuration has a very high input resistance,

more than 100M ohm (because the input circuit is located between the

gate-source reverse biased).

JFET is a voltage-controlled device, the normal transistor is a current

controlled device.
JFET is unipolar transistor, which includes a majority of the types of
current carriers only. Common are bipolar transistors, because it

involves both types of current carriers.

JFET not too sensistif to changes in ambient temperature. Minority

current carriers do not leave big impressions. No effect of Beta.

JFET has a code of conduct Legal Square, where, the output current
varies with the square of the input. Properties like this do not exist on
ordinary transistor. There are several electronic circuit that needs a

feature like this.

JFET has a low internal noise level of a normal transistor. Therefore it
is often used in hi-fi amplifier and FM radio receiver.

2.5

MOSFET

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2.5.1 INTRODUCTION
MOSFET is the second category of the FET. MOSFETs (metal-oxide
semiconductor FET) have terminals like the JFET source, drain and gate.
What distinguishes the JFET MOSFET gate terminal is separated by a
channel (channel) by a layer of silicon oxide (SiO2). Therefore, the gate
current becomes smaller. MOSFET also called IGFET (insulated-gate FET).
There are two types of MOSFETs, which are depletion mode MOSFET
and an increase (enhancement-depletion mode) and only enhancement mode
MOSFET (enhancement-mode only).
2.5.2 DEPLETION AND ENHANCEMENET MODE MOSFET (DE MOSFET)
DE MOSFET can operate in a depletion mode and enhancement mode
by simply changing the polarity of the voltage between the gate and source
(VGS). When VGS is negative, DE depletion mode MOSFET operation.
Conversely when VGS is positive, DE enhancement mode MOSFET
operation.
Figure 4.13 and 4.14 shows the structures and symbols DE MOSFET.
Referring to the structures, we find the channel (channel) is connected
from the drain to the source. This causes the drain current (ID) can flow even
if VGS = 0.

Figure 4.13: Structure and schematic symbol of N-channel DE MOSFET.

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Figure 4.14: Structure and schematic symbol of P-channel DE MOSFET.

4.5.3 ENHANCEMENT MODE MOSFET (E MOSFET)
E MOSFET can operate only enhancement mode. It operates with a
large VGS value.
E MOSFET structure in contrast to DE MOSFET. Figure 4.15 shows
the structures and symbols E MOSFET.
Referring to the structures, we find the channel (channel) is connected
between the drain and source. This causes the drain current (ID) can not flow
if VGS = 0.

Figure 4.15: Structure and schematic symbol of E MOSFET.

2.6

TRIJUNCTION TRANSISTOR
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Another semiconductor components including transistors family is

Ekasimpang Transistor (Unijunction Transistor) or simply called CGU.
CGU varies with the diode as CGU has 3 terminals. CGU in contrast to FET
as the CGU can not amplify the signal. CGU can control AC power with a small
gesture.
Figure 4.16 shows the structure CGU. It is built from a single bar of
semiconductor material of the type N absorbed to have little bearing currents
majority, and published two ends of two terminal sites. The site on the labeled B2
and below as B1.
A P-type material layer affixed to the bar and it was published N terminal
manufacturers (E). Manufacturer absorbed so much of the majority current carriers.
Drawing a schematic symbol for the cash-generating unit is as shown in Figure 4.16
CGU is generally used in circuit applications: Phase Control
Switching
Timer
Signal Generator

Write YES or NO in the box.

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YES/NO
1

FET is a unipolar devices.

FET is a current control devices.

Source and Drain are parts of semiconductor.

FET has three terminals which are Drain, Source and

Gate.

JFET consisting of N-type channels only.

The arrows in the symbol indicate N-type JFET.

MOSFET gate terminals are separated by a layer of

SiO2

DE MOSFET channel is connected from the drain to

the source.

UJT is a unipolar device.

10

UJT has three terminals, which are Emitter, Collector

and Base.

Chapter 2: semiconductor DEVICES | DJM2032 Electronic System