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Materials Chemistry A
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DOI: 10.1039/c4ta03674c
www.rsc.org/MaterialsA
Voc of 1.05 V and FF of 0.78. The eciency reproducibility of the devices is also high: 80% of devices
achieve eciency higher than 15%.
Department of Chemistry, National Central University and Research Center for New
Generation Photovoltaics, National Central University, Jhong-Li, Taiwan 32001,
ROC. E-mail: t610002@cc.ncu.edu.tw; Fax: +886-3-4227664
found that perovskite lm can also be applied to planar heterojunction solar cells, which are adaptable to low temperature
solution processes. Several lm deposition methods were used
to fabricate perovskite lms in planar heterojunction solar cells
such as co-evaporation of two precursors3 (PbCl2 and CH3NH3I
(MAI)), one-step solution process14 (mixing lead halide and
CH3NH3I in a solvent before deposition), vapor-assisted solution process,15 or two-step dipping process.2
The application of perovskites in organic (small molecule or
polymer) solar cells (which professor Snaith named as an
inverted cell architecture) started in 2013. Jeng et al.16 used
perovskite as a donor and PC61BM as an acceptor to construct a
perovskite/fullerene planar heterojunction hybrid solar cell
with the eciency of 3.9%. The low photovoltaic performance
may be due to the fact that the perovskite phase was not pure, as
revealed by the XRD pattern provided in the paper. Using a
similar cell architecture but changing the ratio and concentration of PbI2 and MAI, Lam et al.17 pushed the eciency of the
device up to 7.4%. Snaith et al.18 introduced a thin compact TiOx
lm between PC61BM and Al electrode and used CH3NH3PbI3xClx as an absorber to make a device with an eciency of
up to 9.8%, in 2014. The same year, Yang et al.19 used the same
absorber CH3NH3PbI3xClx to fabricate a device with 11.5%
eciency and a very high ll factor of 0.72. Gr
atzel et al.20 used a
well-designed perovskite cell architecture to achieve an eciency of 12.04%. They co-evaporated PbI2 and MAI to prepare
the perovskite lm, inserted an electron blocking (polyTPD)
layer in between the perovskite and PEDOT:PSS, and used Au as
an electrode. Note that the resultant cell had an impressive high
open-circuit voltage of 1.05 V. Nevertheless, when the active area
of the device was enlarged from 0.09 cm2 to 0.89 cm2, the eciency decreased from 12.04% to 8.27% due to a signicant
decrease in the FF value (from 0.67 to 0.52). Hence, improving
the FF in perovskite-based cells is very critical for obtaining
high eciency cells when the active area is enlarged.
Fig. 1
Paper
Preparation steps and architecture of inverted perovskite/PCBM solar cells (SC: Spin-coating, TE: thermal evaporation).
Paper
Voc (V)
FF
h (%)
20
30
32
34
36
38
40
50
8.60
8.37
9.94
11.89
13.56
14.59
13.65
9.45
0.27
0.51
0.80
0.85
0.90
0.91
0.90
0.78
0.27
0.53
0.70
0.70
0.72
0.74
0.71
0.66
0.81
2.34
5.65
7.12
8.90
9.92
8.86
5.02
a
Device
architecture:
ITO/PEDOT:PSS/perovskite/PC61BM/Ca/Al.
Thicknesses of PbI2, PEDOT:PSS, and PC61BM layers are 165 nm,
40 nm, and 140 nm, respectively.
Fig. 2
Paper
Photovoltaic parameters for solar cells based on varying acceptors and acceptor solvent annealing timea
Acceptor
Voc (V)
FF
h (%)
Rsb (U cm2)
PC61BM
PC71BM
PC71BM
0
0
24
14.59
18.13
19.98
0.91
0.95
1.05
0.74
0.76
0.78
9.92
13.29
16.31
5.60
5.41
4.41
Device architecture: ITO/PEDOT:PSS/perovskite/PCBM. Thickness of perovskite: 360 nm; thickness of PEDOT:PSS: 40 nm; thickness of PCBM:
140 nm. b Rs: series resistance calculated from the corresponding IV curves.
Fig. 4
Paper
Paper
Fig. 6
Experimental
Acknowledgements
Financial support from the National Science Council (NSC),
Taiwan, ROC (grand number: NSC101-2113-M-008-008-MY3) is
acknowledged. The devices fabrication was carried out at the
Advanced Laboratory of Accommodation and Research for
Organic Photovoltaics, Ministry of Science and Technology,
Taiwan, ROC.
Paper
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