4N30M PDF

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
6-Pin DIP General Purpose Photodarlington Optocoupler

Features
Description
High Sensitivity to Low Input Drive Current
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and

TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Meets or Exceeds All JEDEC Registered
Specifications
Safety and Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute

DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
Low Power Logic Circuits
Telecommunications Equipment
Portable Electronics
Solid State Relays
Interfacing Coupling Systems of Different Potentials
and Impedances
Schematic
ANODE 1
6 BASE
6
1
CATHODE 2
N/C 3
5 COLLECTOR
4 EMITTER
6
1
6
1
Figure 2. Package Outlines

Figure 1. Schematic
2007 Fairchild Semiconductor Corporation

4NXXM, H11B1M, TIL113M Rev. 1.0.4
www.fairchildsemi.com
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 6-Pin DIP General Purpose Photodarlington Optocoupler
December 2014
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for safe electrical insulation only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Characteristics
< 150 VRMS
IIV
< 300 VRMS
IIV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
Symbol
175
Value
Unit
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,

Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,

100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594
Vpeak
VIORM
Maximum Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over-Voltage
VPR
Parameter
6000
Vpeak
External Creepage
mm
External Clearance
mm
External Clearance (for Option TV, 0.4" Lead Spacing)
10
mm
DTI
Distance Through Insulation (Insulation Thickness)
0.5
mm
TS
Case Temperature(1)
175
IS,INPUT
Current(1)
350
mA
800
mW
Input
PS,OUTPUT Output
RIO
Power(1)
Insulation Resistance at TS, VIO =
500 V(1)
>
109
Note:
1. Safety limit values maximum values allowed in the event of a failure.

2
Safety and Insulation Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Unit
-40 to +125
TOTAL DEVICE
TSTG
Storage Temperature
Operating Temperature
-40 to +100
Junction Temperature
-40 to +125
260 for 10 seconds
Total Device Power Dissipation @ TA = 25C
270
mW
Derate Above 25C
3.3
mW/C
IF
Continuous Forward Current
80
mA
VR
Reverse Voltage
TOPR
TJ
TSOL
PD
Lead Solder Temperature
EMITTER
IF(pk)
PD
Forward Current Peak (300 s, 2% Duty Cycle)
3.0
LED Power Dissipation @ TA = 25C
120
mW
Derate above 25C
2.0
mW/C
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
30
BVCBO
Collector-Base Breakdown Voltage
30
BVECO
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25C
150
mW
Derate Above 25C
2.0
mW/C
Continuous Collector Current
150
mA
PD
IC

3
Absolute Maximum Ratings
TA = 25C Unless otherwise specified.
Individual Component Characteristics

Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
1.2
1.5
1.2
1.5
EMITTER
4NXXM
VF
Input Forward Voltage(2)
IR
Reverse Leakage Current(2)
Capacitance(2)
IF = 10 mA
H11B1M,
TIL113M
VR = 3.0 V
4NXXM
0.001
100
VR = 6.0 V
H11B1M,
TIL113M
0.001
10
All
150
pF
VF = 0V, f = 1.0 MHz
0.8
DETECTOR
BVCEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
Voltage(2)
BVCBO
Collector-Base Breakdown
Voltage(2)
BVECO
Emitter-Collector Breakdown
IE = 100 A, IB = 0
Voltage(2)
ICEO
Collector-Emitter Dark
Current(2)
IC = 100 A, IE = 0
VCE = 10 V, Base Open
4NXXM,
TIL113M
30
60
H11B1M
25
60
All
30
100
4NXXM
5.0
10
H11B1M,
TIL113M
10
All
100
nA
Notes:
2. Indicates JEDEC registered data.

4
Electrical Characteristics
TA = 25C Unless otherwise specified.
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
4N32M,
4N33M
50 (500)
mA (%)
4N29M,
4N30M
10 (100)
mA (%)
IF = 1 mA, VCE = 5 V
H11B1M
5 (500)
mA (%)
IF = 10 mA, VCE = 1 V
TIL113M
30 (300)
mA (%)
DC CHARACTERISTICS
IC(CTR)
VCE(SAT)
Collector Output
Current(3)(4)(5)
Saturation Voltage(3)(5)
IF = 10 mA, VCE = 10 V,
IB = 0
IF = 8 mA, IC = 2.0 mA
4NXXM
1.0
TIL113M
1.25
IF = 1 mA, IC = 1 mA
H11B1M
1.0
IF = 200 mA, IC = 50 mA,

VCC = 10 V, RL = 100
4NXXM,
TIL113M
5.0
IF = 10 mA, VCE = 10 V,
RL = 100
H11B1M
AC CHARACTERISTICS
ton
toff
Turn-on Time
Turn-off Time
IF = 200 mA, IC = 50 mA,

VCC = 10 V, RL = 100
IF = 10 mA, VCE = 10 V,
RL = 100
BW
25
4N32M,
4N33M,
TIL113M
100
4N29M,
4N30M
40
H11B1M
Bandwidth(6)(7)
18
30
kHz
Notes:
3. Indicates JEDEC registered data.
4. The current transfer ratio(IC / IF) is the ratio of the detector collector current to the LED input current.
5. Pulse test: pulse width = 300 s, duty cycle 2.0% .
6. IF adjusted to IC = 2.0 mA and IC = 0.7 mA rms.
7. The frequency at which IC is 3 dB down from the 1 kHz value.
Isolation Characteristics
Symbol
Characteristic
Test Conditions
VISO
Input-Output Isolation Voltage t = 1 Minute
CISO
Isolation Capacitance
RISO
Isolation Resistance

Min.
Typ.
4170
VI-O = 0 V, f = 1 MHz
VI-O = 500 VDC, TA = 25C
Unit
VACRMS
0.2
1011
Max.
pF
5
Electrical Characteristics (Continued)
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF - FORWARD VOLTAGE (V)
1.8
1.5
1.4
TA = -55C
1.3
TA = 25C
1.2
VCE = 5.0 V
TA = 25C
Normalized to
IF = 10 mA
1.0
0.8
0.6
0.4
TA = 100C
1.1
0.2
1.0
0.0
1
10
100
IF - LED FORWARD CURRENT (mA)
10
12
14
16
18
20
Figure 4. Normalized CTR vs. Forward Current
Figure 3. LED Forward Voltage vs. Forward Current
1.4
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
1.2
IF = 5 mA
NORMALIZED CTR
IF - FORWARD CURRENT (mA)
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
Normalized to
IF = 10 mA
TA = 25C
0.4
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
IF = 5 mA
0.6
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
0.2
-60
-40
-20
20
40
60
80
100
10
100
TA - AMBIENT TEMPERATURE (C)
Figure 5. Normalized CTR vs. Ambient Temperature
Figure 6. CTR vs. RBE (Unsaturated)
100
1.0
0.9
VCE= 0.3 V
VCE (SAT) - COLLECTOR-EMITTER

SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1000
RBE- BASE RESISTANCE (k)
0.8
IF = 20 mA
0.7
0.6
IF = 10 mA
0.5
0.4
0.3
IF = 5 mA
0.2
TA = 25C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
IF = 5 mA
0.1
0.001
0.01
0.0
10
100
1000
RBE- BASE RESISTANCE (k )
0.1
10
IC - COLLECTOR CURRENT (mA)
Figure 7. CTR vs. RBE (Saturated)

IF = 10 mA
Figure 8. Collector-Emitter Saturation Voltage

vs. Collector Current
6
Typical Performance Curves
1000
5.0
NORMALIZED ton - (ton(RBE) / ton(open))
IF = 10 mA
VCC = 10 V
TA = 25C
SWITCHING SPEED (s)
100
Toff
10
Tf
Ton
1
Tr
0.1
0.1
4.5
VCC = 10 V
IC = 2 mA
RL = 100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
100
10
100
R-LOAD RESISTOR (k)
Figure 9. Switching Speed vs. Load Resistor
10000
100000
Figure 10. Normalized ton vs. RBE
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.4
1.3
NORMALIZED toff - (toff(RBE) / toff(open))
1000
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10 V
IC = 2 mA
RL = 100
0.5
0.4
0.3
0.2
10000
VCE = 10 V
TA = 25C
1000
100
10
0.1
0.01
0.001
0.1
10
100
1000
10000
100000
20
40
60
80
100
TA - AMBIENT TEMPERATURE (C)
Figure 11. Normalized toff vs. RBE
Figure 12. Dark Current vs. Ambient Temperature
Switching Time Test Circuit and Waveform

VCC = 10 V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 13. Switching Time Test Circuit and Waveform

7
Typical Performance Curves (Continued)
Reflow Profile
300
260C
280
260
> 245C = 42 s
240
220
200
180
Time above
183C = 90 s
160
140
120
1.822C/s Ramp-up rate
100
80
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 14. Reflow Profile

8
Part Number
Package
Packing Method
4N29M
DIP 6-Pin
Tube (50 Units)
4N29SM
SMT 6-Pin (Lead Bend)
Tube (50 Units)
4N29SR2M
SMT 6-Pin (Lead Bend)
Tape and Reel (1000 Units)
4N29VM
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
4N29SVM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
4N29SR2VM
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
4N29TVM
DIP 6-Pin, 0.4 Lead Spacing, DIN EN/IEC60747-5-5 Option
Tube (50 Units)
Note:
8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M,
and TIL113M devices.
Marking Information
V
3
4N29
X YY Q
Figure 15. Top Mark
Table 1. Top Mark Definitions

1
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., 4
Digit Work Week, Ranging from 01 to 53
Assembly Package Code

9
Ordering Information
Package Dimensions
Figure 16. 6-pin DIP Through Hole

10
Package Dimensions (Continued)
Figure 17. 6-pin DIP Surface Mount

11
Package Dimensions (Continued)
Figure 18. 6-pin DIP 0.4 Lead Spacing

12
13


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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M

6-Pin DIP General Purpose Photodarlington Optocoupler

High Sensitivity to Low Input Drive Current

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and

Meets or Exceeds All JEDEC Registered

UL1577, 4,170 VACRMS for 1 Minute

Figure 2. Package Outlines

2007 Fairchild Semiconductor Corporation

< 300 VRMS

Pollution Degree (DIN VDE 0110/1.89)

Comparative Tracking Index

Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,

Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,

Maximum Working Insulation Voltage

Highest Allowable Over-Voltage

External Clearance (for Option TV, 0.4" Lead Spacing)

Distance Through Insulation (Insulation Thickness)

Insulation Resistance at TS, VIO =

2007 Fairchild Semiconductor Corporation

Safety and Insulation Ratings

260 for 10 seconds

Total Device Power Dissipation @ TA = 25C

Derate Above 25C

Continuous Forward Current

Lead Solder Temperature

Forward Current Peak (300 s, 2% Duty Cycle)

LED Power Dissipation @ TA = 25C

Derate above 25C

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Collector Breakdown Voltage

Detector Power Dissipation @ TA = 25C

Derate Above 25C

Continuous Collector Current

2007 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

TA = 25C Unless otherwise specified.

Individual Component Characteristics

Input Forward Voltage(2)

Reverse Leakage Current(2)

VF = 0V, f = 1.0 MHz

VCE = 10 V, Base Open

2007 Fairchild Semiconductor Corporation

TA = 25C Unless otherwise specified.

IF = 200 mA, IC = 50 mA,

IF = 200 mA, IC = 50 mA,

Input-Output Isolation Voltage t = 1 Minute

2007 Fairchild Semiconductor Corporation

Electrical Characteristics (Continued)

VF - FORWARD VOLTAGE (V)

IF - LED FORWARD CURRENT (mA)

Figure 4. Normalized CTR vs. Forward Current

Figure 3. LED Forward Voltage vs. Forward Current

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

IF - FORWARD CURRENT (mA)

TA - AMBIENT TEMPERATURE (C)

Figure 5. Normalized CTR vs. Ambient Temperature

Figure 6. CTR vs. RBE (Unsaturated)

VCE (SAT) - COLLECTOR-EMITTER

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

RBE- BASE RESISTANCE (k)

RBE- BASE RESISTANCE (k )