PD - 97128

IRFP3306PbF
HEXFET Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G

Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free

VDSS
RDS(on) typ.
max.
ID (Silicon Limited)

60V
3.3m:
4.2m:
160A c

ID (Package Limited)

120A

TO-247AC
G

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

160c

ID @ TC = 100C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

110

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V (Wire Bond Limited)

120

IDM

Pulsed Drain Current d

620

PD @TC = 25C

Maximum Power Dissipation

220

Linear Derating Factor

1.5

VGS

Gate-to-Source Voltage

20

W/C
V

dv/dt
TJ

Peak Diode Recovery f

14

V/ns

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics
EAS (Thermally limited)

Single Pulse Avalanche Energy e

IAR

Avalanche Currentd

EAR

Repetitive Avalanche Energy g

184

mJ

See Fig. 14, 15, 22a, 22b,

A
mJ

Thermal Resistance
Typ.

Max.

RJC

Symbol

Junction-to-Case k

0.67

RCS

Case-to-Sink, Flat Greased Surface

0.24

RJA

Junction-to-Ambient jk

40

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Parameter

Units
C/W

1
3/3/08

IRFP3306PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS

Parameter

Min. Typ. Max. Units

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

0.07

V/C Reference to 25C, ID = 5mAd

RDS(on)

Static Drain-to-Source On-Resistance

3.3

4.2

m VGS = 10V, ID = 75A g

VGS(th)

Gate Threshold Voltage

2.0

4.0

IDSS

Drain-to-Source Leakage Current

RG

20

250

Gate-to-Source Forward Leakage

100

Gate-to-Source Reverse Leakage

-100

Internal Gate Resistance

0.7

Conditions

60

IGSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 250A

VDS = VGS, ID = 150A

VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125C

nA

VGS = 20V
VGS = -20V

Dynamic @ TJ = 25C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

230

S
nC

Conditions
VDS = 50V, ID = 75A

Qg

Total Gate Charge

85

120

Qgs

Gate-to-Source Charge

20

VDS =30V

Qgd

Gate-to-Drain ("Miller") Charge

26

Qsync

Total Gate Charge Sync. (Qg - Qgd)

59

ID = 75A, VDS =0V, VGS = 10V

ID = 75A
VGS = 10V g

td(on)

Turn-On Delay Time

15

tr

Rise Time

76

ID = 75A

td(off)

Turn-Off Delay Time

40

RG = 2.7

tf

Fall Time

77

VGS = 10V g

Ciss

Input Capacitance

4520

Coss

Output Capacitance

500

VDS = 50V

Crss

Reverse Transfer Capacitance

250

= 1.0MHz, See Fig. 5

Coss eff. (ER) Effective Output Capacitance (Energy Related)

Coss eff. (TR) Effective Output Capacitance (Time Related)h

720

VGS = 0V, VDS = 0V to 48V i, See Fig. 11

880

VGS = 0V, VDS = 0V to 48V h

ns

pF

VDD = 30V

VGS = 0V

Diode Characteristics
Symbol

Parameter

IS

Continuous Source Current

ISM

(Body Diode)
Pulsed Source Current

VSD

(Body Diode)d
Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Min. Typ. Max. Units

Reverse Recovery Charge

IRRM

Reverse Recovery Current

ton

Forward Turn-On Time

31

35

34

45

1.9

620
1.3

Conditions

MOSFET symbol

showing the
integral reverse

p-n junction diode.

TJ = 25C, IS = 75A, VGS = 0V g

ns

TJ = 25C

VR = 51V,

TJ = 125C

IF = 75A
di/dt = 100A/s g

nC

TJ = 25C

G
S

TJ = 125C

TJ = 25C

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25C, L = 0.04mH
RG = 25, IAS = 96A, VGS =10V. Part not recommended for use
above this value .

160c

ISD 75A, di/dt 1400A/s, VDD V(BR)DSS, TJ 175C.

Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

R is measured at TJ approximately 90C

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IRFP3306PbF
1000

1000

BOTTOM

100

4.5V

BOTTOM

100

4.5V

60s PULSE WIDTH

Tj = 175C

60s PULSE WIDTH

Tj = 25C
10

10
0.1

10

0.1

100

Fig 1. Typical Output Characteristics

10

100

Fig 2. Typical Output Characteristics

1000

2.5

100

10

TJ = 25C
1

VDS = 25V

60s PULSE WIDTH

0.1
3.0

4.0

5.0

VGS = 10V
2.0

(Normalized)

TJ = 175C

2.0

ID = 75A

RDS(on) , Drain-to-Source On Resistance

ID, Drain-to-Source Current()

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

6.0

7.0

1.5

1.0

0.5

8.0

-60 -40 -20

VGS, Gate-to-Source Voltage (V)

8000

VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd

Ciss
4000

2000

Coss
Crss
10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

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ID= 75A
VDS = 48V

16

VDS= 30V
VDS= 12V

12

0
1

20 40 60 80 100 120 140 160 180

Fig 4. Normalized On-Resistance vs. Temperature

20

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

6000

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

C, Capacitance (pF)

VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V

20

40

60

80

100

120

140

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

IRFP3306PbF
10000

100

ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

1000

TJ = 175C

TJ = 25C

10

OPERATION IN THIS AREA

LIMITED BY R DS (on)

1000
1msec

100

10msec

10

Tc = 25C
Tj = 175C
Single Pulse

VGS = 0V
0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

V(BR)DSS , Drain-to-Source Breakdown Voltage

180
Limited By Package

140
120
100
80
60
40
20
0
25

50

75

100

125

150

10

100

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage
160

VDS , Drain-toSource Voltage (V)

VSD , Source-to-Drain Voltage (V)

ID, Drain Current (A)

DC

0.1

0.1

80

ID = 5mA

70

60

50
-60 -40 -20

175

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (C)

T C , Case Temperature (C)

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 10. Drain-to-Source Breakdown Voltage

1.5

EAS, Single Pulse Avalanche Energy (mJ)

800

Energy (J)

1.0

0.5

0.0

ID
13A
18A
BOTTOM 96A
TOP

600

400

200

10

20

30

40

50

VDS, Drain-to-Source Voltage (V)

Fig 11. Typical COSS Stored Energy

100sec

60

25

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

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IRFP3306PbF
1

Thermal Response ( Z thJC )

D = 0.50
0.20
0.10

0.1

0.05
0.02
0.01

0.01

R1
R1
J
1

C
1

Ri (C/W)

(sec)

0.249761

0.00028

0.400239 0.005548

Ci= i/Ri

SINGLE PULSE
( THERMAL RESPONSE )

0.001

R2
R2

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

0.0001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150C and
Tstart =25C (Single Pulse)

Avalanche Current (A)

0.01

0.05
10

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25C and
Tstart = 150C.
1
1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

EAR , Avalanche Energy (mJ)

200

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 96A

160

120

80

40

0
25

50

75

100

125

150

175

Starting TJ , Junction Temperature (C)

PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC

Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

Fig 15. Maximum Avalanche Energy vs. Temperature

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IRFP3306PbF
16

ID = 1.0A
ID = 1.0mA
ID = 250A
ID = 150A

4.0
3.5

12

IRRM - (A)

VGS(th) Gate threshold Voltage (V)

4.5

3.0
2.5

2.0

IF = 30A
VR = 51V

TJ = 125C
TJ = 25C

1.5
0

1.0
-75

-50

-25

25

50

75

100 200 300 400 500 600 700 800 900 1000

100 125 150 175

dif / dt - (A / s)

TJ , Temperature ( C )

Fig 16. Threshold Voltage Vs. Temperature

Fig. 17 - Typical Recovery Current vs. dif/dt

16

350
300
250

QRR - (nC)

IRRM - (A)

12

IF = 45A
VR = 51V

200
150
IF = 30A
VR = 51V

100

TJ = 125C
TJ = 25C

50

TJ = 125C
TJ = 25C

0
100 200 300 400 500 600 700 800 900 1000

100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / s)

dif / dt - (A / s)

Fig. 18 - Typical Recovery Current vs. dif/dt

Fig. 19 - Typical Stored Charge vs. dif/dt

350
300

QRR - (nC)

250
200
150
100
50
0

IF = 45A
VR = 51V
TJ = 125C
TJ = 25C
100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / s)

Fig. 20 - Typical Stored Charge vs. dif/dt

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IRFP3306PbF
Driver Gate Drive

D.U.T

D.U.T. ISD Waveform

Reverse
Recovery
Current

RG

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

VDD

P.W.
Period
VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

+
-

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor
Current
Inductor Curent
ISD

Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
V(BR)DSS
15V

DRIVER

VDS

tp

D.U.T

RG

+
V
- DD

IAS
VGS
20V

0.01

tp

I AS

Fig 22a. Unclamped Inductive Test Circuit

LD

Fig 22b. Unclamped Inductive Waveforms

VDS

VDS

90%

VDD -

10%

D.U.T

VGS

VGS
Pulse Width < 1s
Duty Factor < 0.1%

td(on)

Fig 23a. Switching Time Test Circuit

tr

td(off)

Fig 23b. Switching Time Waveforms

Id

Current Regulator
Same Type as D.U.T.

Vds
Vgs

50K
12V

tf

.2F
.3F

D.U.T.

+
V
- DS

Vgs(th)
VGS
3mA

IG

ID

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

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Qgs1 Qgs2

Qgd

Qgodr

Fig 24b. Gate Charge Waveform

IRFP3306PbF
TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2001
IN T HE AS S EMBLY LINE "H"
Note: "P" in ass embly line pos ition
indicates "Lead-Free"

INTERNATIONAL
RECT IFIER
LOGO

PART NUMBER
IRFPE30
56

135H
57

AS S EMBLY
LOT CODE

DAT E CODE
YEAR 1 = 2001
WEEK 35
LINE H

TO-247AC packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/08

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