68

Proceedings 1995 IEEE International SO1 Conference, Oct. 1995

ANALYTICAL THRESHOLD VOLTAGE MODEL

FOR SHORT CHANNEL N+-Pi DOUBLE-GATE SO1 MOSFETS
Kunihiro Sumki, Yoshiharu Tosaka, and Toshihiro Sugii
Fujitsu Laboratories Ltd., Atsugi, Japan

[Abstract] Previously, we proposed n'- p+ double-gate SO1 MOSFETs, and fabricated this device, and
demonstrated high-speed, low-power performance with a gate length
of 0.2 pm [ 11. In this paper, we have derived
a threshold voltage model V& for short channel devices to predict how far this device can be scaled. Using this model,
which agrees with numerical data, we evaluated V~ lowering AV& with decreasing the gate length LG, and showed
that we can design a 0.05 W-LG device with A V of
~ 25 mV and an S-swing of 65 mvldecade.
[Theory] In n+- p+ double-gate So1MOSFETs (Fig.
l), both gate oxide thicknesses are the same and the
same gate voltage VG is applied to the both gates. The
channel doping concentration N~ is as low as 1015 cm-3
independent of Lc,.
- The threshold voltage for long
channel n+- p+ double-gate SO1 MOSFETs, Vtw, is
given by [2]
where
is the gate oxide thickness, tSi is the SO1
thickness, $sth is the surface potential for long channel
devices at VG = VthL, V F B ~is the flatband voltage
associated with n+ gate, V F B is
~ the flatband voltage
associated with pf gate, and AVm = Vmp - Vmn.
Solving a two-dimensional potential distribution in
the channel region with a method similar to that
described in [3], we found that the minimum surface
potential, $sm,is given by

+2 4 m e - g

qsm= V, - V, - &AVm

6t0x + tsi

where v b i is the built-in voltage between source and

channel.
Assuming that the transistor switches on when $sm
reaches qSh,we obtain a V h model as
AV* = V w - V*

[Results and Discussion] Analytical v t h and sswing models agree well with numerical data (Fig. 2).
The short channel effect is characterized by the function
of exp(-L&h). Therefore, the device should be designed

so that LG12h is large enough to suppress the short

channel effects. When tSi increases, h increases and the
device suffers more significant short channel effects
accordingly.
To investigate how small this device can be scaled,
we used the supply voltage VDDand to, adhering the
scaling theory for bulk MOSFETs [4] and SO1 thickness
tSi = 4 tox which provides VthL of around 0.2 V
independent of LG as shown in Fig. 3. tox is limited at
3 nm due to tunneling [5]. Therefore, tox and tsi are
fixed to 3 and 12 nm, respectively,when LG is less than
0.1 pm.
Figure 4 shows the dependence of AV& (=Vtw- Vth)
and S-swing on LG. Short channel effects are not
observed with a LG above 0.1 pm because to, and tsi
decrease linearly and hence LG/2h is constant at 6.8
independent of LG. Further decrease in LG results in
enhanced short channel effects because t o x and tSi are
fixed while LG is decreased. Obviously the short channel
immunity is improved if thinner tox or tsi is available.
The minimum gate length for this device is about 0.05
pm where LG/2h is 3.4 and A v t h = 25 mV and an S swing of 65 mvldecade.
[Conclusion] We derived a Vth model for short

The S-swing is given by [2]

= In 10
1-

1
2qs+V,

-52

Jme
''

channel n+- p' double-gate SO1 MOSFETs, and showed

that we can design a devices with an LG of less than 0.1
pm while maintaining an ideal S-swing and proper V&.
According to our theory, the short channel effects are
negligible if the device is designed so that LG/2k is
more than 3.4.

95CH35763

69

References
[ l ] T. Tanaka, et al., IEEE Trans. Electron
Device Letter, EDL-15, p. 386, 1994.
[2] K. Suzuki,et al., SSDM, p. 274-276,1994.
[3] K. Suzuki, et al., IEEE Trans. Electron
Devices, ED-40, p. 2326, 1993.
[4] G. Baccarani, et al., IEEE Trans. Electron
Devices, ED-31, p. 452, 1984.
[5] P. J. Wright, et al., IEEE Trans. Electron
Devices, ED-37, p. 1884, 1990.

VG

I I

n'

n
SI

POlyslllCon

n+

- Metal
SI02

Fig. 1. n+-p+ double-gate SO1 MOSFET.

.

0.3
to.

= 4 nm

3 1OOr

2 90-

>

E
m 80E

-V,

Ec -0.1

0
0

I
'

E
0
c

= 1.0 V (Analytical)

V, = 0.05 V (Numerical)
V, = 1.0 V (Numerical)

-0.21 .
0.0

"

1.0

0.5

--V,
-V,

'iE

c
Q)

v, = v,,, - 0.2 v

a#

tsl=40nm

Gate length (pm)

(a)

= 4 nm

to.

ts,=20nm

ts I = 20

0
0

= 0.05 V (Analytical)
= 1.0 V (Analytical)
V, = 0.05 V (Numerical)
V, = 1.0 V (Numerical)

706050
0.0

'
'

0.5
Gate length (pm)

1.0

(b)

Fig. 2. Comparison between numerical and analytical data. Numerical data are calculated with a two-dimensional
(b) Dependence of subthreshold swing on LG.
device simulator. (a) Dependence of threshold voltage on h,.

50

40

--

2 5

30

-1

>=

2
"x
0

b
1 >a

20

)
.

10
,hL

...........

0.0

0.1

0.2
0.3
0.4
Gate length (pm)

0
0.5

Fig. 3. Scaling parameter dependence on LG. The

supply voltage VDDis given by 1.8JLG/0.18@m)V , tox
is given by 3[L~/O.l(pm)]nm and it is fixed to 3 nm
when LG is less than 0.1 pm, and tSi is given by 4 b x .

Fig. 4. Dependence of AVh and S-swing on LG.