Data Sheet 1

STFW6N120K3, STP6N120K3,
STW6N120K3
N-channel 1200 V, 1.95 typ., 6 A SuperMESH3
Power MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet production data
Features
Order codes
VDSS
RDS(on)
max
ID
Ptot
STFW6N120K3
1200 V
< 2.4
6A
63 W
STP6N120K3
1200 V
< 2.4
6A
150 W
STW6N120K3
1200 V
< 2.4
6A
150 W
100% avalanche tested
Extremely large avalanche performance
Very low intrinsic capacitances
Zener-protected
TAB
3
1
Figure 1.
TO-247
TO-220
Applications
TO-3PF
Gate charge minimized
Internal schematic diagram
Switching applications
D(2,TAB)
Description
These SuperMESH3 Power MOSFETs are the
result of improvements applied to
STMicroelectronics SuperMESH technology,
combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
STFW6N120K3
STP6N120K3
TO-3PF
6N120K3
STW6N120K3
November 2012
This is information on a product in full production.
Packaging
TO-220
Tube
TO-247
Doc ID 15572 Rev 3
1/17
www.st.com
17
Contents
STFW6N120K3, STP6N120K3, STW6N120K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
Test circuits
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
Doc ID 15572 Rev 3
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings

Value
Symbol
Parameter
Unit
TO-3PF
VGS
Gate- source voltage
TO-220
TO-247
30
ID
Drain current (continuous) at TC = 25 C
ID
Drain current (continuous) at TC = 100 C
3.8
Drain current (pulsed)
20
IDM
(1)
PTOT
Power dissipation at TC = 25 C
IAR
Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)
EAS
Single pulse avalanche energy (starting

TJ = 25 C, ID = IAR, VDD = 50 V)
ESD
Gate-source human body model

(C = 100 pF, R = 1.5 k)
VISO
Insulation withstand voltage (RMS) from all

three leads to external heat sink
(t = 1 s, TC = 25 C)
Tstg
Storage temperature
TJ
63
150
150
180
mJ
kV
3500
-55 to 150
Operating junction temperature
1. Pulse width limited by safe operating area
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering

purpose
Doc ID 15572 Rev 3
Unit
TO-3PF
TO-220 TO-247
1.98
0.83
50
62.5
300
C/W
50
C/W
C
3/17
Electrical characteristics
(TC = 25 C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On / off states
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
1200
IDSS
VDS = 1200 V
Zero gate voltage
drain current (VGS = 0) VDS = 1200 V, TJ = 125 C
1
50
A
A
IGSS
Gate-body leakage
current (VDS = 0)
10
VGS = 20 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 A
RDS(on)
Static drain-source onVGS = 10 V, ID = 2.5 A

resistance
1.95
2.4
Min.
Typ.
Max.
Unit
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,

VGS = 0
1050
90
1
pF
pF
pF
Co(tr) (1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 960 V
40
pF
Co(er) (2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 960 V
25
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge

Gate-source charge
Gate-drain charge
VDD = 960 V, ID = 7.2 A,

VGS = 10 V
(see Figure 20)
39
7.7
23.5
nC
nC
nC
Ciss
Coss
Crss
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as
Coss when VDS increases from 0 to 80% VDSS.
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
4/17
Doc ID 15572 Rev 3
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Switching times on/off

Parameter
Test conditions
Turn-on delay time

Rise time
Turn-off-delay time
Fall time
VDD = 600 V, ID = 3.6 A,

RG = 4.7 , VGS = 10 V
(see Figure 19)
Min.
Typ. Max. Unit
30
12
58
32
Min.
Typ.
6
20
A
A
ns
ns
ns
ns
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 5 A, VGS = 0
--
1.6
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/s

VDD = 60 V TJ = 25 C (see
Figure 24)
580
7
25
ns
C
A
Reverse recovery time

Reverse recovery charge
Reverse recovery current
ISD = 7.2 A, di/dt = 100 A/s

VDD = 60 V, TJ = 150 C
(see Figure 24)
840
9
22
ns
C
A
Min.
Typ.
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Max. Unit
1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Table 8.
Symbol
V(BR)GSO
Gate-source Zener diode

Parameter
Test conditions
Gate-source breakdown
voltage
IGS = 1 mA (ID=0)
30
Max. Unit
-
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the devices ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the devices
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 15572 Rev 3
5/17
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
Figure 3.
!-V
)$
!
TO3PF
K
=0.5
0.2

O
N
$3
PE
RA
ITE TION
D IN
BY
M THIS
AX A
2 RE
A
IS

,I
S
S
MS
Thermal impedance for TO-3PF
0.1
-1
10
0.05
0.02
MS
4J#
4C#

Figure 4.

-3
10
-2
10
-1
10
tp (s)
Figure 5.
Thermal impedance for TO-220
Figure 7.
Thermal impedance for TO-247
is
n)
S(
o
pe
ra
ite tion
d
by in t
m his
ax a
RD rea
10s
100s
1ms
m
Li
Tj=150C
Tc=25C
Sinlge
pulse
0.01
0.1
10
100
1000 VDS(V)
Safe operating area for TO-247

AM07309v1
ID
(A)
)
on
10s
100s
1ms
S(
O
pe
m rat
ite ion
d
by in t
m his
ax a
RD rea
is
10
Li
10ms
Tj=150C
Tc=25C
0.1
6/17
-4
10
10ms
0.1
0.01
0.1
10 -5
10
AM07308v1
10
-2
6$36
Safe operating area for TO-220
ID
(A)
Figure 6.
Single pulse
3INLGE
PULSE

0.01
Sinlge
pulse
1
10
100
1000 VDS(V)
Doc ID 15572 Rev 3

Figure 8.
Output characteristics
)$
!
Figure 9.
!-V
6'36
Transfer characteristics
!-V
)$
!

6$36
6

6

6
6$36

Figure 10. Normalized BVDSS vs temperature

AM07911v1
BVDSS
(norm)
1.10
6'36
Figure 11. Static drain-source on-resistance

AM07909v1
RDS(on)
()
2.6
VGS=10V
1.05
2.2
1.00
1.8
0.95
1.4
0.90
0.85
-50
50
100
1
0.5
TJ(C)
Figure 12. Output capacitance stored energy

!-V
%OSS *
1.5
2.5
3.5
4.5
ID(A)
Figure 13. Capacitance variations

AM07912v1
C
(pF)

Ciss

1000

100

Coss

10
Crss

6$36
Doc ID 15572 Rev 3
1
0.1
10
100
VDS(V)
7/17
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on-resistance vs
temperature
!-V
6'3
6
6$3
6
6$3

AM079071v1
RDS(on)
()
2.5
VGS=10V
2
1.5

1

0.5

1GN#
Figure 16. Normalized gate threshold voltage

vs temperature
!-V
6'3TH
NORM

0
-75
25
-25
75
125 TJ(C)
Figure 17. Maximum avalanche energy vs

temperature
!-V
%!3
M*

4*#
Figure 18. Source-drain diode forward

characteristics
63$
6
!-V
4* #

4* #

4*#

8/17

)3$!
Doc ID 15572 Rev 3

4*#
Test circuits
Test circuits
Figure 19. Switching times test circuit for

resistive load
Figure 20. Gate charge test circuit

VDD
12V
47k
1k
100nF
3.3
F
2200
RL
VGS
IG=CONST
VDD
100
Vi=20V=VGMAX
VD
RG
2200
F
D.U.T.
D.U.T.
VG
2.7k
PW
47k
1k
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load

Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
D.U.T.
FAST
DIODE
D
G
VD
L=100H
3.3
F
25
1000
F
VDD
2200
F
3.3
F
VDD
ID
G
RG
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform

ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
Doc ID 15572 Rev 3
10%
AM01473v1
9/17
Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
TO-3PF mechanical data

mm
Dim.
Min.
Typ.
5.30
5.70
2.80
3.20
3.10
3.50
D1
1.80
2.20
0.80
1.10
0.65
0.95
F2
1.80
2.20
10.30
11.50
G1
10/17
Max.
5.45
15.30
15.70
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
1.80
2.20
3.80
4.20
Dia
3.40
3.80
10
Doc ID 15572 Rev 3
10.20
Figure 25. TO-3PF drawing

L3
L
D
E
D1
Dia
L2
L6
L7
F2(3x)
F(3x)
G1
G
R
L5
N
L4
7627132_C
Doc ID 15572 Rev 3
11/17
Table 10.
TO-220 type A mechanical data

mm
Dim.
Min.
Typ.
4.40
4.60
0.61
0.88
b1
1.14
1.70
0.48
0.70
15.25
15.75
D1
12/17
Max.
1.27
10
10.40
2.40
2.70
e1
4.95
5.15
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
3.75
3.85
2.65
2.95
Doc ID 15572 Rev 3
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 15572 Rev 3
13/17
Table 11.
TO-247 mechanical data

mm.
Dim.
Min.
Typ.
4.85
5.15
A1
2.20
2.60
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
0.40
0.80
19.85
20.15
15.45
15.75
5.30
14.20
14.80
L1
3.70
4.30
5.45
L2
14/17
Max.
5.60
18.50
3.55
3.65
4.50
5.50
5.30
5.50
Doc ID 15572 Rev 3
5.70
Figure 27. TO-247 drawing
0075325_G
Doc ID 15572 Rev 3
15/17
Revision history
Revision history
Table 12.
16/17
Document revision history
Date
Revision
Changes
15-Apr-2009
First release.
02-Aug-2010
Document status promoted from preliminary data to datasheet.

Inserted Section 2.1: Electrical characteristics (curves).
14-Nov-2012
Figure 13: Capacitance variations and Figure 14: Gate charge vs

gate-source voltage have been corrected.
Minor text changes.
Doc ID 15572 Rev 3
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Doc ID 15572 Rev 3
17/17

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STFW6N120K3, STP6N120K3,

100% avalanche tested

Extremely large avalanche performance

Very low intrinsic capacitances

Gate charge minimized

Internal schematic diagram

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Electrical characteristics (curves)

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Absolute maximum ratings

Gate- source voltage

Drain current (continuous) at TC = 25 C

Drain current (continuous) at TC = 100 C

Drain current (pulsed)

Max current during repetitive or single pulse

Single pulse avalanche energy (starting

Gate-source human body model

Insulation withstand voltage (RMS) from all

Operating junction temperature

1. Pulse width limited by safe operating area

Thermal resistance junction-case

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Gate threshold voltage VDS = VGS, ID = 100 A

Static drain-source onVGS = 10 V, ID = 2.5 A

VDS = 100 V, f = 1 MHz,

VGS = 0, VDS = 0 to 960 V

VGS = 0, VDS = 0 to 960 V

f = 1 MHz open drain

Total gate charge

VDD = 960 V, ID = 7.2 A,

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Switching times on/off

Turn-on delay time

VDD = 600 V, ID = 3.6 A,

Typ. Max. Unit

Source drain diode

Reverse recovery time

ISD = 7.2 A, di/dt = 100 A/s

Reverse recovery time

ISD = 7.2 A, di/dt = 100 A/s

1. Pulse width limited by safe operating area.

Gate-source Zener diode

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Electrical characteristics (curves)

Safe operating area for TO-3PF

Thermal impedance for TO-3PF

Thermal impedance for TO-220

Thermal impedance for TO-247

Safe operating area for TO-247

Safe operating area for TO-220

Doc ID 15572 Rev 3

STFW6N120K3, STP6N120K3, STW6N120K3

Figure 10. Normalized BVDSS vs temperature

Figure 11. Static drain-source on-resistance

Figure 12. Output capacitance stored energy

Figure 13. Capacitance variations

4*#