ELECTRONICS & TELECOMMUNICATION ENGG.

DEPARTMENT

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Date of Assignment: 03/02/2016
Date of
Submission:08\02\2016
Subj: Power Electronics
Class: TE
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Assignment No.2
Draw & explain 1-phase fully controlled rectifier for R-L load with various
output waveforms. Also derive the equations for average & rms output
voltages.
Draw & explain 1-phase half (semi)controlled rectifier for R-L load with
various output waveforms. Also derive the equations for average & rms
output voltages.
Explain the following :i) Performance parameters of controlled rectifier ii)
Significance of free/flywheel diode iii) Comparison of symmetrical &
asymmetrical semi converter .iv)Compare 1-phase-3phase rectifiers
A single phase semiconverter is operated from 230v,50hz ac supply.The load
is resistive having resistance of 10.If the firing angle is =60 0 . Calculate
i)Average o/p voltage ii) Rms o/p voltage .
Draw & explain three phase fully controlled bridge converter for R load
with o/p voltage waveforms.Derive the expression for o/p voltage equation
with contiuous current mode.
Draw & explain three phase semi converter for R load with o/p voltage
waveforms.
Based on above ,solve 3-4 numericals from
Dr. P. S. Bimbhra, Power Electronics, Khanna Publishers, Delhi.
M. H. Rashid, Power Electronics circuits devices and applications, PHI 3rd edition,
2004 edition, New Delhi
Activity : Search & discuss commercial products based on controlled rectifier

Sub: Power Devices & Machines (Th)

Date of assignment : 20/07/2009

Date of submission :
25/07/2009
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Assignment (1) for Group1
Q.1 Complete the schematic diagram showing an equivalent circuit for an N-channel IGBT,
using an N-channel E-type MOSFET and a PNP bipolar transistor:

Q.2 The equivalent circuit for an IGBT - comprised of a MOSFET coupled to a BJT - bears
resemblance to a couple of other BJT circuits you may have seen before:

Note: the DC power supply voltage is 240 VDC, and the IGBT's maximum gate-to-emitter
control voltage is 20 volts!
Q.3 Identify the characteristics and illustrate times t1 and t2

Q.4 Describe line frequency diodes (from Ned mohan)

Q.5 Steady state characteristics shown ,show different regions , what is second
breakdown?

Q.6 Draw the symbol and explain the working of the MOSFET shown below .
.

Q.7

state causes of delay ,rise ,fall time while switching power

MOSFET .What is VT ?

Q.8 Compare power MOSFET, power BJT and IGBT on the basis of
a) construction
b) Switching
c) Merits
d) Demerits

Q.9 Complete the following

1. Overdrive factor is
2. Forced Beta is
3. Safe operating area is
4. Tranconductance (gm) is
Q.10 List the techniques to optimize the base drive ( switching ) signal.

Q.11 The BJT in fig. is specified to have BF in the range of 8 to 40 . The load resistance is
Rc = 11 . The DC supply voltage is Vcc = 200 v & the input voltage to the base circuit is
VB = 10 V. If VCE (Sat) = 1.0 V . VBE (Sat) = 1.5 V ,Find a) the value of RB that results in
saturation with an ODF of 5. b) The Bforced c) The power loss PT in the transistor.

* Numericals based on
1. Voltage ,current and power equation
2. Antisaturation control
will be asked in exam . (attach separate if require)
Q.12 The base drive circuit shown below has Vcc =100 v ,Rc = 1.5 . Vd1 =2.1 v
Vd2= 0.9 v .VBE = 0.7, VB= 15 V RB= 2.5 . and = 16 . Calculate a) the collector current
without clamping b) the collector emitter clamping voltage VCE and
c) the collector current with clamping .