ESE319 Introduction to Microelectronics

Common Base BJT Amplifier

Common Collector BJT Amplifier
Common Collector (Emitter Follower) Configuration
Common Base Configuration
Small Signal Analysis
Design Example
Amplifier Input and Output Impedances

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Basic Single BJT Amplifier Features

CE Amplifier
Voltage Gain (AV) moderate (-RC/RE)

CC Amplifier
low (about 1)

Current Gain (AI)

moderate ( 1)

moderate ( )

CB Amplifier
high
low (about 1)

Input Resistance

high

high

low

Output Resistance

high

low

high

CE BJT amplifier => CS MOS amplifier

CC BJT amplifier => CD MOS amplifier
CB BJT amplifier => CG MOS amplifier
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Common Collector ( Emitter Follower)

Amplifier

vout

In the emitter follower, the

output voltage is taken between emitter and ground.
The voltage gain of this amplifier is nearly one the output
follows the input - hence the
name: emitter follower.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Emitter Follower Biasing

Then, choose/specified IE, and
the rest of the design follows:

iC
Vb
iB

iE

vout

V E V CC / 20.7
RE = =
IE
IE
For an assumed = 100:

Split bias voltage drops about

equally across the transistor
VCE (or VCB) and VRe (or VB).
For simplicity,choose:
V CC
R1 = R2
V B=
2

As with CE bias design, stable op.

pt. => RB 1 RE , i.e.

R1
RE
RB= R1 R2 = =1 10 RE
2
10
R1 = R2=20 RE

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Typical Design
Choose: I E =1 mA
V CC =12 V
And the rest of the design
follows immediately:
V E 12/ 20.7
RE = =
=5.3 k
3
IE
10

iC
Vb
iB

iE

vout

Use standard sizes!

RE =5.1 k
R1 = R2=100 k
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Equivalent Circuits

RB= R1R2
Rb

vout

vout

<=>
VCC/2

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Multisim Bias Check

V Rb= I B R B=

IE
R =0.495 V
1 B
iB
-

vout

<=>

VRb
+

Rb

vout

Identical results as expected!

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Emitter Follower Small Signal

Circuit

Mid-band equivalent circuit:

RB
50
vsig ' =
vsig =
vsig vsig
RB RS
50.05
50
RTH = RS RB=
RS RS
50.05

vout
Rb

Small signal mid-band circuit - where CB has negligible reactance

(above min). Thevenin circuit consisting of RS and RB shows
effect of RB negligible, since it is much larger than RS.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Follower Small Signal Analysis - Voltage Gain

Circuit analysis:
vsig = RS r 1 RE i b
ib
ie

vout

Solving for ib
v sig
i b=
RS r 1 RE

RE 1 v sig
vout =
RS r 1 RE

vout
RE v sig
AV = =
1
vsig RS r
RE
1
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

ESE319 Introduction to Microelectronics

Small Signal Analysis Voltage Gain - cont.

vout
RE
=
v sig RS r
RE
1
vout

Since, typically:

RS r
RE
1

vout RE
AV =
=1
v sig RE
Note: AV is non-inverting
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Blocking Capacitor - CB - Selection

Rb
vbg

ib

Use the base current expression:

vbg = r i b RE i E = r 1 i b

vbg
i b=
r 1 RE

vbg
r bg = = r 1 RE 1 RE =1015.1 k =515 k
RS =50
ib
To obtain the base to ground resistance of the transistor:
This transistor input resistance is in parallel with the 50 k
RB, forming the total amplifier input resistance:

RRinB=50 k RS

515
Ri n = RS RBr bg RBr bg =
50 k =45.6 k
51550
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

CB Selection cont.
Choose CB such that its reactance is 1/10 of Rin at min:
Ri n
1
Assume the lowest frequency
=
C B 10
is 20 Hz:
10
CB
min Ri n

min=2 20125=1.25102
=100

CB

1010
1.73 F
1.250.46

Ri n46 k

Pick CB = 2 F (two 1 F caps in parallel), the nearest standard

value in the RCA Lab. We could be (unnecessarily) more precise
and include Rs as part of the total resistance in the loop. It is very
small compared to Rin.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Final Design

2.0 uF

vout

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Multisim Simulation

Results

20 Hz. Data

1 Khz. Data
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Of What value is a Unity Gain Amplifier?

ib

ie

vout

To answer this question,

we must examine the
output impedance of the
amplifier and its power
gain.

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Emitter Follower Output Resistance

ib

vout

ix

vx
Rout

RB=50 k RS

Assume:

i x
i x=i b i b =1 i b i b =
1
RS r
v x=i b Rs r =
i
1 x
r
v x RS r
Rout = =

ix
1 1
Rout is the Thevenin resistance looking
into the open-circuit output.

VT
VT
I C =1 mA r = = =2500
IB
IC

=100

RS =50

2550
Rout
=25.5
100

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Multisim Verification of R

out

Rout

Rin

Av*vsig
AV = 1

i x=1 i x

i sc =i x

vsig = RS i b r i b

<=>

Rin = RS r 1 RE RL1 RL

voc= AV v sig
-

Thevenin equivalent for the

short-circuited emitter follower.
If was 200, as for most good
NPN transistors, Rout would be
lower - close to 12 .

AV v sig RS r
Rout =
=
ix
1
i sc =i x

Multisim short circuit check

( = 100, vout = vsig):

voc AV v sig rms

1
Rout = =
=
=25.25
i sc
i sc rms
0.0396

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Equivalent Circuits with Load R

ib
vout

ie

Rout

v
Z in = sig
i 'e

<=>
RL

+
+
Rin
Av*vsig vload RL||Re
-

vsig rms
1
Rout =
=
=25.25
i sc rms 0.0396

Rin= RS r 1 RERL1 RL

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Emitter Follower Power Gain

Consider the case where a RL = 50 load is connected through an infinite
capacitor to the emitter of the follower we designed. Using its Thevenin
equivalent:
isig
Rout25 C =
vsig

Rin

iload
+
- Av*vsig
vth=G vsig

RL AV vsig 50
2
vload =
= v = v
RL Rout 75 sig 3 sig

AV vsig
v sig
i load =
=
Rout RL 75
2 2
pload =vload i load =
vsig
225

+
vload RL50

AV 1

50 load is in parallel with 5.1k

RE and dominates:
vsig
vsig
v sig
i sig =i b =

Rin 1 RERL 10150

1
v2sig
5000
pload 25000
G pwr =
=
=44.41
p sig
225

p sig =v sig i sig

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

The Common Base Amplifier

vout

vout

Voltage Bias Design

Current Bias Design

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Common Base Configuration

Both voltage and current biasing follow the same rules as
those applied to the common emitter amplifier.
As before, insert a blocking capacitor in the input signal path
to avoid disturbing the dc bias.
The common base amplifier uses a bypass capacitor or a
direct connection from base to ground to hold the base at
ground for the signal only!
The common emitter amplifier (except for intentional RE
feedback) holds the emitter at signal ground, while the common
collector circuit does the same for the collector.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Voltage Bias Common Base Design

47k Ohm 4.7 k Ohm
vout

5.1k Ohm

470 Ohm

We keep the same bias that we

established for the gain of 10
common emitter amplifier.
All that we need to do is pick the
capacitor values and calculate
the circuit gain.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Common Base Small Signal Analysis - C

i'b

ib

Determine CIN: (let C B=)

4.7 k Ohm

ic
i'e

I'c

ie

470 Ohm

Find a equivalent impedance for

the input circuit, RS, CIN, and RE2:
RE2r e

vRe2=

isig

RE2r e RS

Zin
re

IN

1
j C IN

RE2r e
ideally vRe2= R r R vsig
E2
e
S

vsig r = r
e
1

for min

RS r e
1
1
10
RS RE2r e
=
C IN =
10
min C IN
min C IN
min RS r e
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Determine C IN cont.
A suitable value for CIN for a 20 Hz lower frequency:

10
10
min C IN RS r e 1 C IN
=
F
2 min RS r e 2 2075
10
C IN =
1062 F !
125.675

Not too practical!

Must choose smaller value of CIN.

1. Choose: min C IN RS r e =1
or
2. Choose larger min
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Small-signal Analysis - C
i'b

i'c

ib

RE2 >> RS

ib'

Determine CB: (let C IN =)

Note the reference current
reversals (due to vsig polarity)!

1
v sig = R i r
i 'b
j CB
'
S e

i'e
ie

Zin

Determine Z in =

ic

v sig
i

'
e

'
i
1
e
v sig = RS i'e r
j C B 1

'
e

i=

1 RS r

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

1
j CB

vsig

25

ESE319 Introduction to Microelectronics

Determine CB

i'b

i'c
'
e

i=
ib'

i'e

1
1
1 RS r
j CB

v sig

'
e

i=

RE2 >> RS

RS
Zin

Z in=

v sig
i 'e

vsig

1
1
r
1
j C B

= RS

1
1
r
1
j CB

r
1
ideally Z in RS

1 RS r for min
1 C B
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Determine - C B cont.
i'b

i'c

For min

vout
ib'

i'e

RE2 >> RS

r
1
Z in RS

1 RS r
1 C B

Choose:

C B

10
F
min 1 RS r

i.e.

C B

10
=10.5 F
2 20 1001502500

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Small-signal Analysis

ib'

RE2 >> RS

Assume: C B=C IN =

'
e

Voltage Gain
1

r
RS
1

1
v sig =
v sig
RS r e

RC

vout = R i = R i =
vsig
1 RS r e
'
C c

'
C e

vout
RC

100 5100
AV =
=
=
67
vsig 1 RS r e 101 5025

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Multisim Simulation

1062 uF

2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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ESE319 Introduction to Microelectronics

Multisim Frequency Response

20 Hz. response

1 KHZ. Response
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 01Oct08 KRL

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