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Plasma Dicing for Higher Yield and

Throughput More Die for Your $


Ian Wright, Regional Marketing Director-Asia
SPTS Technologies

Agenda
Si DRIE Capability
Bosch Process

DRIE Benefits Summary


Integration
Patterning
Metals
Process control & notching

Die Strength
Summary

Si DRIE for Plasma Dicing


The Bosch Process
Repeating loops
Polymer dep
Polymer removal
Isotropic Si etch

Scallops
generated by
isotropic Si etch

Fundamental to the Si etch approach are;


Providing a compatible etch structure
Definition of the Si to be etched
Majority of challenges relate to test structures

Dicing Schemes
DBG Dice Before Grind

Standard equipment
Partial F/S DRIE
Invert wafer & frame mount
Singulate during B/S grinding

DAG Dice After Grind (On Carrier)


Standard equipment
Temporarily bond to wafer sized carrier
Singulate during DRIE
Remount die onto tape/frame for pick & place

DAG Dice After Grind (On Frame)


Frame based equipment
Singulate during DRIE
Drop-in replacement for conventional dicing

Mosaic fxP for DAG


Mosaic platform
EFEM compatible with tape frames
Frame and/or wafer alignment
Simultaneous wafer/frame running

Rapier-200S
Sized for 200mm wafer tape frames
Modified handling & ESC
Same processes as standard Rapier

Rapier-300S
Sized for 300mm wafer tape frames
Modified handling & ESC
Same processes as standard Rapier
Available Q4,15

Benefits of DRIE for Dicing


Throughput
Parallel process
Largely independent of die size
Cluster approach for higher output/floor area

Damage
Bosch etch creates clean scallops
No vibrations, debris, water
Increased die strength
Yield improvement

Die Density
Narrower dicing lanes
Die shape/location can be varied

SPTS Mosaic Plasma Dicing Examples


Die Sizes from <1mm2 to >10mm2

20m x 100m
>7wph

30m x 300m
>3wph

50m x 190m
>5.5wph

7m x 120m
>7wph

10m x 100m
>7wph

All throughputs include; process & handling overheads; process times + overetch;
wafer-less inter-wafer chamber plasma cleans

Options for Integration


Presenting defined & compatible lanes
Layout

Relevant for blank sheet designs


All options become available;
Lane width reduction
Die shape & tessellation
Removal of seal rings, etc
Moving of test structures (TEG)
Especially metals
On-die or in die locations
Ensure space around TEG

Process Flow

Adapt main device process flow


Remove non-Si features
Additional etch steps after test
structures are used

Options for Integration


Processes to define lanes
Lane Definition
Litho/Self-masking

Lane Definition
Combine LASER/Blade & Plasma

Assumes non-Si is cleared


Litho for additional mask layer
Standard films can be used
PR, PI, Oxide, etc
Extending existing layers as
sacrificial mask layers
Cleared during main steps
Applicable for smaller die

Use LASER/blade to eliminate nonSi materials and open lane to Si.


Complete singulation with DRIE.
Most relevant for larger die.

Combining Plasma & LASER/Blade


Quality of lane definition not
assured
Edges not as sharp as litho
Up to DRIE to manage this case

Potential that non-Si materials are


not completely removed
OK, if they do not bridge lane
Simply etch around them

*(Sample courtesy of UTAC)

*(Sample courtesy of UTAC)

*These images contain confidential information belonging to UTAC and is subject to nondisclosure obligations. No distribution or reproduction is permitted.

Metals
Backside metal (BSM), Bondpads and solder bumps
All are compatible with DRIE PM
No apparent risk to chamber condition

BSM separated prior to pick-and-place


Various options available for this
Potential use of LASER/blade to open BSM to tape

No observable damage to bumps/pads post-etch

After customers proprietary


metal separation

Importance of Process Control


EPD & Notch Prevention

Dicing to tape is parallel to SOI


Risk of notching at interface
Due to build up of standing charge

Notching can be problem for die quality


In particular die strength

Notching can be prevented


Use of pulsed bias RF allows standing charge to dissipate
SPTS has IP for use of pulsed bias to prevent notching

Die Strength & Notching


SPTS & DISCO compared die strength behaviour
Comparing the patterning methods; Photo, Blade & LASER
Notching; With & without EPD/Overetch control

EPD & Bias Pulsing


No Notch

No EPD/No Bias Pulsing


Large Notch

Die Strength & Notching

Plasma dicing gives approx 2x gain in die strength


Patterning method has minor influence
Large notch gave worst die strength of all, even c/w blade
Shows importance of notch control for successful plasma dicing

Die Strength & Notching

Plasma dicing gives approx 2x gain in die strength


Patterning method has minor influence
Large notch gave worst die strength of all, even c/w blade
Shows importance of notch control for successful plasma dicing

Summary
Plasma dicing is rapidly becoming an accepted technique
Still early days in the adoption cycle

Process & Hardware are set & available


Key issue is integration of plasma etch into this stage
Patterning
Metals & Dielectrics in the dicing lane

Variety of options to be considered


Layout & process flow changes
Additional or Self masking
Use of LASER/Blade as patterning medium

Process control through EPD & Notch prevention


Critical for die strength

Thanks to
SPTS Samples & Applications Groups
DISCO

Thank You
www.spts.com
2015 SPTS Technologies - Confidential & Proprietary