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Ireg(SS) = 35 70 mA
@ Vak = 7.5 V
Anode
1
3
Radj
2/4
Cathode
Features
Applications
SOT223
CASE 318E
STYLE 2
MARKING DIAGRAM
C
AYW
AAKG
G
1
A
Radj
A
= Assembly Location
Y
= Year
W
= Work Week
AAK
= Specific Device Code
G
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping
NSI45035JZT1G
SOT223
(PbFree)
NSV45035JZT1G
SOT223
(PbFree)
Device
NSI45035JZ, NSV45035JZ
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating
AnodeCathode Voltage
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Symbol
Value
Vak Max
45
VR
500
mV
TJ, Tstg
55 to +150
ESD
Unit
C
Class 2
Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Symbol
Min
Typ
Max
Unit
Ireg(SS)
29.75
35
40.25
mA
42.5
mA
Voverhead
1.8
Ireg(P)
7.4
pF
31
pF
1.
2.
3.
4.
30.9
Ireg(SS) steady state is the voltage (Vak) applied for a time duration 35 sec, using FR4 @ 300 mm2 2 oz. Copper traces, in still air.
Voverhead = Vin VLEDs. Voverhead is typical value for 75% Ireg(SS).
Ireg(P) nonrepetitive pulse test. Pulse width t 1.0 msec.
f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 5) TA = 25C
Derate above 25C
Symbol
Max
Unit
PD
1008
8.06
mW
mW/C
RJA
124
C/W
RJL4
33.3
C/W
PD
1136
9.09
mW
mW/C
RJA
110
C/W
RJL4
33.3
C/W
PD
1238
9.9
mW
mW/C
RJA
101
C/W
RJL4
33.7
C/W
PD
1420
11.36
mW
mW/C
RJA
88
C/W
RJL4
32.1
C/W
PD
1316
10.53
mW
mW/C
RJA
95
C/W
RJL4
32.4
C/W
PD
1506
12.05
mW
mW/C
RJA
83
C/W
RJL4
30.8
C/W
TJ, Tstg
55 to +150
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher C/W values based upon empirical
measurements and method of attachment.
5. FR4 @ 300 mm2, 1 oz. copper traces, still air.
6. FR4 @ 300 mm2, 2 oz. copper traces, still air.
7. FR4 @ 500 mm2, 1 oz. copper traces, still air.
8. FR4 @ 500 mm2, 2 oz. copper traces, still air.
9. FR4 @ 700 mm2, 1 oz. copper traces, still air.
10. FR4 @ 700 mm2, 2 oz. copper traces, still air.
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2
NSI45035JZ, NSV45035JZ
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
10
0
10
20
10
10
20
30
40
50
70
60
40
TA = 40C
0.0290 mA/C
30
0.0278 mA/C
25
TA = 25C
20
TA = 85C
15
TA = 125C
10
Radj = Open
5
0
10
TA = 25C
36
35
34
33
Radj = Open
32
31
3.0
5.0
6.0
7.0
8.0
9.0
10
41
40
39
38
37
36
35
34
33
32
Vak @ 7.5 V
TA = 25C
Radj = Open
31
30
29
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
37
Ireg, CURRENT REGULATION (mA)
37
Vak @ 7.5 V
TA = 25C
Radj = Open
36
35
38
34
0.0302 mA/C
35
39
Ireg(P), PULSE CURRENT (mA)
45
10
15
20
25
30
35
70
Vak @ 7.5 V
TA = 25C
65
60
55
50
45
40
35
30
TIME (s)
10
100
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3
1000
NSI45035JZ, NSV45035JZ
2300
500 mm2/2 oz
2100
300 mm2/2 oz
1900
1700
100 mm2/2 oz
1500
1300
1100
500 mm2/1 oz
900
300 mm2/1 oz
700
500
40
100 mm2/1 oz
20
20
40
60
80
APPLICATIONS INFORMATION
The CCR is a self biased transistor designed to regulate the
current through itself and any devices in series with it. The
device has a slight negative temperature coefficient, as
shown in Figure 2 Tri Temp. (i.e. if the temperature
increases the current will decrease). This negative
temperature coefficient will protect the LEDS by reducing
the current as temperature rises.
The CCR turns on immediately and is typically at 20% of
regulation with only 0.5 V across it.
The device is capable of handling voltage for short
durations of up to 45 V so long as the die temperature does
not exceed 150C. The determination will depend on the
thermal pad it is mounted on, the ambient temperature, the
pulse duration, pulse shape and repetition.
Single LED String
Figure 8.
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4
NSI45035JZ, NSV45035JZ
Figure 10.
Figure 9.
Higher Current LED Strings
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NSI45035JZ, NSV45035JZ
Other Currents
Figure 13.
ILLUMINANCE (lx)
5000
4000
Figure 11.
3000
2000
Lux
Linear
1000
0
0
10
20
30
40 50
60 70
DUTY CYCLE (%)
80
90 100
Figure 12.
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NSI45035JZ, NSV45035JZ
Thermal Considerations
P D(MAX) +
T J(MAX) * T A
R qJA
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NSI45035JZ, NSV45035JZ
PACKAGE DIMENSIONS
SOT223 (TO261)
CASE 318E04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
HE
e1
A1
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0
STYLE 2:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10
ANODE
CATHODE
NC
CATHODE
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm
inches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NSI45035JZ/D