3.155J/6.

152J Lecture 10:

Lithography Part 1
Prof. Martin A. Schmidt
Massachusetts Institute of Technology
10/8/2003

Outline

The Lithographic Process

Basic Process
Definitions

Fundamentals of Exposure
Exposure Systems
Resists
Advanced Lithography
Recommended reading

Plummer, Chapter 5
Other: Campbell, Chapter 7,8,9

Fall 2003 M.A. Schmidt

3.155J/6.152J Lecture 10 Slide 2

IC Process

An idea

Circuit Design
Process Simulation
Device Simulation
Layout
BOXES
Design Rules

Wafers

Fall 2003 M.A. Schmidt

A file

Mask
Shop

Wafer
Fab

3.155J/6.152J Lecture 10 Slide 3

Wafer Fab - Lithography

Most Common Measure of Complexity

# of Masks, Minimum Feature (examples)

Approximately 50% of the Process Steps

Oxidation

Litho

Anneal

Litho

Etch

Etch

Oxidation/Deposition

Metal Deposition

Litho

Litho

Etch

Etch

Implant

Sinter

Drives Infrastructure

Cleanliness
Vibration
Temperature and Humidity

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3.155J/6.152J Lecture 10 Slide 4

Semiconductor Roadmap

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3.155J/6.152J Lecture 10 Slide 5

Pattern Transfer Steps

Coat with
photoresist

Expose
Mask

Develop
Etch*

Strip resist

*Wet

Fall 2003 M.A. Schmidt

etch
3.155J/6.152J Lecture 10 Slide 6

Definitions

Metrics

Resolution
Throughtput
Registration (Alignment)

Exposure Systems - UV

Projection - Fraunhofer
Proximity - Fresnel
Contact - Fresnel
Advanced

DUV, E-Beam, X-Ray, Nano-imprint

Resists

Positive/Negative
Contrast
CMTF

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3.155J/6.152J Lecture 10 Slide 7

Lithography Systems
Proximity

Contact

Projection

Mask
Wafer
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3.155J/6.152J Lecture 10 Slide 8

Contact/Proximity Printing

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3.155J/6.152J Lecture 10 Slide 9

Contact/Proximity Printing

Applies when O < g < W2/O

Minimum resolvable feature = (Og)1/2
Fall 2003 M.A. Schmidt

3.155J/6.152J Lecture 10 Slide 9

Proximity Printing Limits

Minimum resolvable feature = (Og)1/2
Gap = 20 Pm and Source = 436 nm
3.0 Pm

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3.155J/6.152J Lecture 10 Slide 11

Projection Printing

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3.155J/6.152J Lecture 10 Slide 12

Image from a Circular Opening

Note limit of d
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3.155J/6.152J Lecture 10 Slide 13

Resolving Features

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3.155J/6.152J Lecture 10 Slide 14

Rayleigh Limit

Rayleigh Criterion: When the

peak of one projection lands on
the first zero of the other.
S. Wolf, Microchip Manufacturing, Lattice Press
Fall 2003 M.A. Schmidt

3.155J/6.152J Lecture 10 Slide 15

The Rayleigh Criterion

n=1 (air)

R = 1.22Of/d = 1.22Of/n(2fsinD) = 0.61O/nsinD

NA = nsinD Range from 0.16-0.76 )
R = 0.61O/NA = k1O/NA
(practical k1 = 0.6-0.8)
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3.155J/6.152J Lecture 10 Slide 16

Modulation Transfer Function (MTF)

Fall 2003 M.A. Schmidt

3.155J/6.152J Lecture 10 Slide 17

Modulation Transfer Function (MTF)

Intensity

Mask

MTF =
Distance

Intensity

Wafer

Imax - Imin
Imax + Imin

Imax

Imin
Fall 2003 M.A. Schmidt

Distance

3.155J/6.152J Lecture 10 Slide 18

MTF vs Feature Size

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3.155J/6.152J Lecture 10 Slide 19

Depth of Focus
O/4 = G - Gcos)
Small ):
O/4 = G)2/2
) = sin ) = d/2f = NA

d
)

Depth of Focus = G = O/2(NA)2

= k2 O/(NA)2
f

Fall 2003 M.A. Schmidt

R = 0.61O/NA = k1O/NA

3.155J/6.152J Lecture 10 Slide 21

Resist Contrast
Dose = Intensity (W/cm-2) x time (s)
Negative

Q0
Qf

Exposure Dose (log scale)

mJ cm-2

Developed Thickness

Developed Thickness

Positive

Qf
Q0

Exposure Dose (log scale)

mJ cm-2

J = 1 / log10(Qf/Q0)
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3.155J/6.152J Lecture 10 Slide 22

Dose

Ideal Exposure Ideal Resist

Resist Thickness

Distance

Distance

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3.155J/6.152J Lecture 10 Slide 23

Dose

Real Exposure Ideal Resist

Qf

Resist Thickness

Distance

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Increase
Time

3.155J/6.152J Lecture 10 Slide 24

Dose

Real Exposure Real Resist

Qf
Q0
Resist Thickness

Distance

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Decrease
Contrast

Increase
Time

3.155J/6.152J Lecture 10 Slide 25

Dose

Dose

Decreasing Pitch

Qf
Q0
Distance

Resist Thickness

Resist Thickness

Distance

Distance
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3.155J/6.152J Lecture 10 Slide 26

Developed Thickness

Critical Modulation Transfer Function (CMTF)

Q0
Qf

J = 1 / log10(Qf/Q0)

Fall 2003 M.A. Schmidt

CMTF =
Qf Q0
10J 1
= J
Qf + Q0
10 + 1

If J = 3, CMTF = 0.37
If J = 2, CMTF = 0.52

3.155J/6.152J Lecture 10 Slide 28

Effect of Coherence on MTF

CMTF

CMTF

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3.155J/6.152J Lecture 10 Slide 30