PD - 94008A

IRFP250N
HEXFET Power MOSFET
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Advanced Process Technology

Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements

VDSS = 200V
RDS(on) = 0.075

ID = 30A

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.

TO-247AC

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

Max.

Units

30
21
120
214
1.4
20
315
30
21
8.6
-55 to +175

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.24

0.7

40

C/W

1
10/7/04

IRFP250N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
200

2.0
17

Typ.

0.26

14
43
41
33

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

2159
315
83

V(BR)DSS
V(BR)DSS/TJ

IGSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.075

VGS = 10V, ID = 18A

4.0
V
VDS = VGS, ID = 250A

S
VDS = 50V, ID = 18A
25
VDS = 200V, VGS = 0V
A
250
VDS = 160V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
123
ID = 18A
21
nC
VDS = 160V
57
VGS = 10V, See Fig. 6 and 13

VDD = 100V

ID = 18A
ns

RG = 3.9

RD = 5.5, See Fig. 10

D
Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

S

VGS = 0V

pF
VDS = 25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
trr
Qrr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
30
showing the
A
G
integral reverse
120
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 18A, VGS = 0V
186 279
ns
TJ = 25C, IF = 18A
1.3 2.0
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See Fig. 11)

Starting TJ = 25C, L = 1.9mH

ISD 18A, di/dt 374A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 300s; duty cycle 2%.

RG = 25, I AS = 18A. (See Figure 12)

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IRFP250N
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP

100

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

100

10

4.5V

0.1

20s PULSE WIDTH

TJ = 25 C

0.01
0.1

10

10

4.5V

0.1
0.1

100

I D , Drain-to-Source Current (A)

1000

100

TJ = 175 C
10

TJ = 25 C
1

V DS = 50V
20s PULSE WIDTH
6.0

7.0

8.0

9.0

10.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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10

100

Fig 2. Typical Output Characteristics

RDS(on) , Drain-to-Source On Resistance

(Normalized)

Fig 1. Typical Output Characteristics

5.0

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

0.1
4.0

20s PULSE WIDTH

TJ = 175 C

3.5

ID = 30A

3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0

VGS = 10V
20 40 60 80 100 120 140 160 180

TJ , Junction Temperature ( C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRFP250N
5000

VGS , Gate-to-Source Voltage (V)

4000

C, Capacitance(pF)

16

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd

3000

Ciss

2000

Coss
1000

Crss

0
10

100

V DS= 160V
V DS= 100V
V DS= 40V

12

0
1

ID = 18A

1000

20

40

60

80

100

QG , Total Gate Charge (nC)

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage
1000

1000

ID , Drain Current (A)

ISD , Reverse Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

100

TJ = 175 C
10

TJ = 25 C
1

0.1
0.2

100us
10
1ms

TC = 25 C
TJ = 175 C
Single Pulse

V GS = 0 V
0.4

0.6

0.8

1.0

1.2

1.4

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage
4

10us

1.6

10ms
10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRFP250N
RD

V DS

35
35

VGS

30
30

D.U.T.

ID , Drain Current (A)

ID , Drain Current (A)

RG

+
V
DD

25
25

10V

20
20

Pulse Width 1 s
Duty Factor 0.1 %

15
15

Fig 10a. Switching Time Test Circuit

10
10

VDS
90%

5
5
0

0
25
25

50
75
100
125
150
50 T 75
125
C)
, Case100
Temperature
(150

TC C
, Case Temperature ( C)

175
175

10%
VGS
td(on)

Fig 9. Maximum Drain Current Vs.

Case Temperature

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response(Z thJC )

D = 0.50

0.20
0.1

0.10
PDM

0.05
0.02
0.01

0.01
0.00001

t1

SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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15V

VDS

DRIVER

D.U.T

RG

+
- VDD

IAS
20V

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

EAS , Single Pulse Avalanche Energy (mJ)

IRFP250N
800

ID
7.3A
13A
BOTTOM 18A
TOP

600

400

200

25

50

75

100

125

150

175

Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.2F
.3F

10 V
QGS

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

IG

Charge

Fig 13a. Basic Gate Charge Waveform

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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IRFP250N
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D.U.T

RG

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D=

+
-

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
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IRFP250N
TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WITH AS SEMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"

PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO

IRFPE30
56

AS S EMBLY
LOT CODE

035H
57

DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/