HARDWARE COMPONENT EXPLANATION

4.3.1 Microcontroller
The microcontrollers played revolutionary role in embedded industry after
the invention of Intel 8051 shown in fig 4.2. The steady and progressive research in
this field gave the industry more efficient, high-performance and low-power
consumption microcontrollers. The AVR, PIC and ARM are the prime examples.
The new age microcontrollers are getting smarter and richer by including latest
communication protocols like USB, I2C, SPI, Ethernet, CAN etc.

FIG 4.2 Pin diagram of PIC microcontroller

Microcontroller PIC16F877A is

one

of the

PIC

Micro

Family

microcontroller which is popular at this moment, start from beginner until all
professionals. Because very easy using PIC16F877A and use FLASH memory
technology so that can be write-erase until thousand times. The superiority this PIC
Microcontroller compared to with other microcontroller 8-bit especially at a speed
of and his code compression. PIC16F877A have 40 pin by 33 path of I/O.

FIG 4.3 PIC STRUCTURE

PIC16F877A shown in fig 4.3 perfectly fits many uses, from automotive
industries and controlling home appliances to industrial instruments, remote
sensors, electrical door locks and safety devices. It is also ideal for smart cards as
well as for battery supplied devices because of its low consumption. EEPROM
memory makes it easier to apply microcontrollers to devices where permanent
storage of various parameters is needed (codes for transmitters, motor speed,
receiver frequencies, etc.). Low cost, low consumption, easy handling and
flexibility make PIC16F877A applicable even in areas where microcontrollers had
not previously been considered (example: timer functions, interface replacement in
larger systems, coprocessor applications, etc.).
In System Programmability of this chip (along with using only two pins in
data transfer) makes possible the flexibility of a product, after assembling and
testing have been completed. This capability can be used to create assembly-line
production, to store calibration data available only after final testing, or it can be
used to improve programs on finished products.

4.3.2 High-Performance RISC CPU:

Only 35 single-word instructions to learn
All single-cycle instructions except for program branches, which are twocycle
Operating speed: DC 20 MHz clock input DC 200 ns instruction cycle
Up to 8K x 14 words of Flash Program Memory, Up to 368 x 8bytes of Data
Memory (RAM), Up to 256 x 8 bytes of EEPROM Data Memory
Pin out compatible to other 28-pin or 40/44-pin PIC16CXXX and
PIC16FXXX microcontrollers
4.3.2.1 Peripheral Features:
Timer0: 8-bit timer/counter with 8-bit pre-scalar
Timer1: 16-bit timer/counter with pre-scalar, can be incremented during
Sleep via external crystal/clock
Timer2: 8-bit timer/counter with 8-bit period register, pre-scalar and postscalar
Two Capture, Compare, PWM modules
Synchronous Serial Port (SSP) with SPI (Master mode) and I2C
(Master/Slave)
Universal Synchronous Asynchronous Receiver

 Transmitter (USART/SCI) with 9-bit address detection

Parallel Slave Port (PSP) 8 bits wide with external RD, WR and CS
controls (40/44-pin only)
Brown-out detection circuitry for Brown-out Reset (BOR)

4.3.2.2 Analog Features:

10-bit, up to 8-channel Analog-to-Digital Converter (A/D)
Brown-out Reset (BOR)
Analog Comparator module (Two analog comparators , Programmable onchip voltage reference (VREF) module , Programmable input multiplexing
from device inputs and internal voltage reference , Comparator outputs are
externally accessible)
4.3.2.3 Special Features:
100,000 erase/write cycle Enhanced Flash program memory typical
1,000,000 erase/write cycle Data EEPROM memory typical
Data EEPROM Retention > 40 years
Self-reprogrammable under software control
In-Circuit Serial Programming (ICSP) via two pins

 Single-supply 5V In-Circuit Serial Programming

Watchdog Timer (WDT) with its own on-chip RC oscillator for reliable
operation
Programmable code protection
Power saving Sleep mode
Selectable oscillator options
In-Circuit Debug (ICD) via two pins

4.3.2.4PIN DIAGRAM:

FIG 4.4 PIN Diagram of microcontroller

4.3.2.5 PIN DESCRIPTION:

OSC1/CLKI - Oscillator crystal or external clock input. Oscillator crystal
input or external clock source input. ST buffer when configured in RC
mode; otherwise CMOS. External clock source input. Always associated
with pin function OSC1 (see OSC1/CLKI, OSC2/CLKO pins).
OSC2/CLKO - Oscillator crystal or clock output. Oscillator crystal output.
Connects to crystal or resonator in Crystal Oscillator mode. In RC mode,
OSC2 pin outputs CLKO, which has 1/4 the frequency of OSC1 and denotes
the instruction cycle rate.

 MCLR/VPP - Master Clear (input) or programming voltage (output).Master

Clear (Reset) input. This pin is an active low Reset to the device.
Programming voltage input.
RA0/AN0 - PORTA is a bidirectional I/O port. Digital I/O.
Analog input 0.
RA1/AN1 - Digital I/O. Analog input 0.
RA2/AN2/VREF-/CVREF - Digital I/O.Analog input 2.A/D reference
voltage (Low) input. Comparator VREF output.
RA3/AN3/VREF+ -

Digital I/O.Analog input 3.A/D reference voltage

(High) input.
RA4/T0CKI/C1OUT - Digital I/O Open-drain when configured as
output.Timer0 external clock input. Comparator 1 output.
RA5/AN4/SS/C2OUT - Digital I/O. Analog input 4.SPI slave select input.
Comparator 2 output.
RB0/INT - PORTB is a bidirectional I/O port. PORTB can be software
programmed for internal weak pull-up on all inputs. Digital I/O. External
interrupt.
RB1 - Digital I/O.
RB2 - Digital I/O.
RB3/PGM - Digital I/O. Low-voltage ICSP programming enable pin.
RB4 - Digital I/O.
RB5 - Digital I/O.
RB6/PGC - Digital I/O. In-circuit debugger and ICSP programming clock.
RB7/PGD - Digital I/O. In-circuit debugger and ICSP programming data.

4.3.3 Power supply unit

Power Supply for PIC 16F877A Microcontroller. In this section
describes how to generate +5V DC power supply and +12V DC power
supply.
Figure
4.4 Power

Supply

Unit.
The
section
one.

power
is

It

the

should

supply
important
deliver

constant output regulated power supply for successful working of the project. A 012V/1mA transformer is used for this purpose. The primary of this transformer is
connected in to main supply through on/off switch& fuse for protecting from
overload and short circuit protection. The secondary is connected to the diodes to
convert 12V AC to 12V DC voltage. And filtered by the capacitors, which is
further regulated to +5v, by using IC 7805 and +12v by using IC7812.

Regulator ICs

Figure 4.5 Regulator IC

Figure 4.6 Regulator IC design

In electronics, a linear regulator is a component used to maintain a steady
voltage.

The resistance of the regulator varies in accordance with the load

resulting in a constant output voltage shown in fig 4.6. In contrast, the switching
regulator is nothing more than just a simple switch. This switch goes on and off at
a fixed rate usually between 50 kHz to 100 kHz as set by the circuit.
The regulating device is made to act like a variable resistor, continuously adjusting
a voltage divider network to maintain a constant output voltage. The primary
advantage of a switching regulator over linear regulator is very high efficiency, a
lot less heat and smaller size.
Linear regulators exist in two basic forms: series regulators and shunt regulators.
Features
Output current up to 1 amps.
Output voltage 5v.
Thermal overload protection.
Short circuit protection.
Output transistor safe operating area protection.

Parameter

Value

Unit

Operating temperature

-40 to 125

Output voltage

Drop voltage

Output resistance

15

Peak current

2.2

mA

Table 4.1 Regulator ratings.

4.3.4 DRIVER IC:

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT
drivers with independent high and low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency
applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 500 or 600
volts.
4.3.4.1 FEATURES:
High noise immunities characterized by 35 Kv/us minimum common
mode rejection.

 2.5A peak output current driving capabilities for most 1200V/20A

IGBT
USE OF p-CHANNEL MOSFETs output stage enables output

voltage swing close to the supply rail.

Wide supply voltage range from 15v to 30v
FAST switching speed
400ns max.propogation delay
100ns max.pulse width disortion
Under voltage Lockout(ULVO) with hysteresis
Extended industrial temp ramge -40c to 100c temp range
Safety and regulatory approved.
1414 peak working insulation voltage.

4.3.4.2 DESCRIPTION :
The FOD3120 is a 2.5A output current gate drive opto coupler, capable of
driving most 1200v/20A IGBT/MOSFET. It is ideally suited for fast switching
driving of power IGBT and MOSFETs used in motor control inverter applications,
and high performance power system.It consists of a gallium aluminum arsenide
(Alga As) light emitting diode optically coupled to an integrated circuit with a
high-speed driver for Push pull MOSFET output stage.
4.3.4.3 PIN DIAGRAM

FIG 4.5 Pin diagram of optocoupler

FIG 4.6 PACKAGE OUTLINE

4.3.4.4 TRUTH TABLE

4.3.4.5 PIN DESCRIPITION

4.3.5.POWER MOSFET:
The MOSFET, or Metal-Oxide-Semiconductor, Field-Effect Transistor is by far the most
common field effect transistor in both digital and analog circuits. The MOSFET is composed of a
channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a
PMOSFET. Unfortunately, many semiconductors with better electrical properties than silicon,
such as gallium arsenide, do not form good gate oxides and thus are not suitable for MOSFETs.

The gate terminal is a layer of polysilicon (polycrystalline silicon) or aluminum placed

over the channel, but separated from the channel by a thin layer of insulating silicon dioxide.

Fig 2.22 power MOSFET

FEATURES OF POWER MOSFETS:

1.

Power MOSFET has lower switching losses but its on-resistance and conduction
losses are more.

2.

MOSFET is a voltage-controlled device.

3.

MOSFET has positive temperature co-efficient for resistance. This makes

parallel operation of MOSFET easy. If a MOSFET shares increased current initially, it
heats up faster its resistance rises and this increased resistance causes this current to shift
to other devices in parallel

4.

In MOSFET secondary break down does not occur, because it has positive
temperature co-efficient.

5.

Power MOSFETs in higher voltage ratings have more conduction losses

6.

The state of the art MOSFETs are available with ratings up to 500V, 140A.

A simplified diagram of an N-channel enhancement MOSFET is shown in figure 7.1. Drain

and source connections are made to higher conduction high doped regions. The metal gate is
electrically isolated from the type substrate by a layer of non-conducting silicon oxide (SiO6).
When a positive voltage is applied to the gate with respect to the source an electric field will be
created pointing away from the base and across the P-region directly under the base. The electric
field will case positive charges in the P-region to move away from the base inducing or
enhancing an N-region in its place. Conduction can then take place between the N+ (drain) N
(enhanced region) N+ (sources). Increasing or decreasing the gate voltage will cause the induced
N channel to grow or decrease in size thus controlling conduction. Varying the voltage between
the gate and body modulates the conductivity of this layer and makes it possible to control the
current flow between drain and source.
In practice, a fairly large current in the order of 1 6A can be required to charge the gate
capacitance at turn ON to ensure that switching time are small. Due to gate leakage current,
nano-amps are needed to maintain the gate voltage once the device is ON.

D R A I N
N +
V

d s

G A T E
V

g s

P
N +

L O A D

S O U R C E

Fig 2.23 Simple model of N-channel enhancement type MOSFET

Anegative voltage is often applied at turn OFF to discharge the gate for speedy switch

OFF. It is obvious that faster switching speeds can be obtained with well designed gate driver
circuits.

PROPERTIES AND CHARACTERISTICS OF MOSFET

The transfer characteristic of an N-channel MOSFET is shown in fig below

Fig 2.24 Transfer characteristic of N-channel MOSFET

Threshold voltage Vt6 is defined as the minimum gate electrode bias required strongly
inverting the surface under the poly and forming a conducting channel between the source and
the drain regions. Vt is usually measured at a drain-source current of 650mA. Common values
are 6-4V for high voltage devices with thicker gate oxides, and 1-6V for lower voltage, logiccompatible devices with thinner gate oxides. Generally the gate-source voltage is chosen
somewhere in the linear region of the transfer characteristics.
The MOSFET has three modes of operation, one of which that acts like a switch that is
off, and two for which the MOSFET acts as a switch that is on. For the NMOSFET the modes
are:

1.Cut-off:When VGS<Vth where Vth is the threshold voltage of the device. Here the switch is
turned off, and there is no conduction between drain and source. While the current between drain
and source should ideally be 0 since the switch is turned off, there is a weak-inversion current or
sub threshold leakage.

2.Triode:When VGS>Vthand VDS<VGS-Vth, the switch is turned on, and a channel has been
created which allows current to flow between the drain and source. The MOSFET operates like a
resistor.

3.Saturation:When VGS>Vthand VDS>VGS-Vth, the switch is turned on, and a channel has been
created which allows current to flow between the drain and source, but the current is not a
function of the voltage difference in the channel, and thus the MOSFET does not operate as a
resistor, but instead it operates as an amplifier.

N-CHANNEL TRENCHMOS TRANSISTOR (IRF840):

FEATURES:

Trench technology.

Low ON-state resistance.

Fast switching.

Low thermal resistance.

4.3.6 Capacitor

Figure 4.13 capacitor.

Hardware capacitor range is 47H
A capacitor is a passive two-terminal electrical component used to store
energy electrostatically in an electric field shown in fig 4.13.

The forms of

practical capacitors vary widely, but all contain at least two electrical conductors
separated by a dielectric. The conductors can be thin films, foils or sintered beads
of metal or conductive electrolyte. The non conducting dielectric acts to increase
the capacitor's charge capacity. An ideal capacitor is characterized by a single

constant value for its capacitance. Capacitance is expressed as the ratio of the
electric charge Q on each conductor to the potential difference V between them.
4.3.7 Resistor
Resistor is an electrical component that reduces the electric current. The resistor's
ability to reduce the current is called resistance and is measured in units of ohms
(symbol: ).If we make an analogy to water flow through pipes, the resistor is a
thin pipe that reduces the water flow shown in fig 4.14.

Figure 4.14 resistor

Hardware resistor range is 22.
Ohm's law the resistor's current I in amps (A) is equal to the resistor's
voltage V in volts (V) divided by the resistance R in ohms (). The resistor's
power consumption P in watts (W) is equal to the resistor's current I in amps (A)
times the resistor's voltage V in volts (V): P=I*V
4.3.8 DIODE
A diode is a specialized electronic component with two electrodes called the
anode and the cathode. Most diodes are made with semiconductor materials such
as silicon, germanium, or selenium shown in fig 4.16. When an analog signal
passes through a diode operating at or near its forward break over point, the signal
waveform is distorted. This nonlinearity allows for modulation, demodulation, and

signal mixing. In addition, signals are generated at harmonics, or integral multiples

of the input frequency.

Figure 4.16 diode

Hardware diode range is IN4007,25V
HARDWARE COMPONENTS DETAILS:
Mosfet switch

-IRF840

Microcontroller

- PIC 16f887A

Mosfet driver

-IRS2110 or Optocoupler TLP250

PN junction diodes

-1N4007

Transformer

-230v/15v

Regulated IC

-7805,7812

Capacitors

-470,1000microfrad

Resisters

-100,220,500 kiloohm

Inductors

-20,50 mH

(Note: capacitor, resister, inductor values are common values which used in many
circuit. Depend upon specification of each project .it may varied)