Discussion :

For this experiment, our aim is to investigate the characteristic of diode. Firstly,we start
our experiment by setting up the apparatus and equipment based on the labsheet. The apparatus
and equipment are DC power supply, digital multimeter, micrometer, diode, resistor of 100 ohm,
1k ohm and 1M ohm. The types of diode use for this experiment are Silicon diode and Zener
diode. It is easy to recognize the type of diode. It can be done by measure their voltage by using
multimeter. If the voltage of diode is 0.7V, it is Silicon diode. Other else, it is Zener diode.
For the part one, we need to measure the resistance of both diodes for reverse biased and
forward biased by using the multimeter. By doing that, we need to set the multimeter dial to
lowest scale first and then measure. If the measurement is too big, then only adjust to the higher
scale and so on. After get the result, we noticed that the value of resistor for the diode in reverse
biased is greater than the value of resistor for the diode in the forward biased. This is because the
function of the reverse biased diode is to block the voltage from pass through it. Which is
generally equivalent to the ohms law, V= I/R. It gives the idea that if the resistance increase, the
voltage will decrease based on this part of this experiment. So that, the voltage cannot pass
through the diode, which is connected in reverse biased. Therefore, this part tells the theoretical
of the forward biased and the reverse biased of the diode is true based on the results of this part.
For the second part of the experiment, we need to demonstrate the current and voltage
characteristic of forward and the reverse biased of the diodes. In this case, we want to investigate
the voltage and current across the diodes that are connected in forward biased. So, we construct a
series circuit of 1k ohm resistor and a Silicon diode on a breadboard as shown in Figure 2 of the
labsheet. After that, we connect two multimeter in parallel with resistor (R1) and Silicon diode
(D) respectively to measure their voltage, VR1 and VD. Next, we set the power supply voltage to
minimum (0V), observe VR1 whether it is 0V or not. If it 0V,we measure VD. If it is not 0V, we
adjust the power voltage supply. Then, we increase the power supply voltage and continue on
setting the VR1 based on the table given and then record the VD. The results are recorded in the
table given in the labsheet.After that, we calculate the value of diode current (ID) by using
formula, voltage resistor per resistor value (VR1/R1). Next, we turn off the DC power supply and
repeat the step by changing the silicon diode into zener diode. So, the VD will change into VZ,
which means the voltage across Zener diode and ID will change into IZ, which means the current

across the Zener diode. As the results, we can conclude that, when the voltage across the diodes
increases, the current that passes through them also increases.
Next, we construct another experiment. In this case, we want to investigate the voltage
and current across the diodes that are connected in reverse biased. So, we construct a series
circuit of 1M ohm resistor and a Silicon diode on a breadboard as shown in Figure 2 of the
labsheet. After that, we connect two multimeter in parallel with resistor (R1) and Silicon diode
(D) respectively to measure their voltage, VR1 and VD. Next, we set the power supply voltage to
minimum (0V), observe VD whether it is 0V or not. If it 0V,we measure VR1. If it is not 0V, we
adjust the power voltage supply. Then, we increase the power supply voltage and continue on
setting the VD based on the table given and then record the VR1. The results are recorded in the
table given in the labsheet.After that, we calculate the value of diode current (ID) by using
formula, voltage resistor per resistor value (VR1/R1). Next, we turn off the DC power supply and
repeat the step by changing the silicon diode into Zener diode and also the resistor into 100 ohm
resistor. So, the VD will change into VZ, which means the voltage across Zener diode and ID will
change into IZ, which means the current across the Zener diode. As the results, we can conclude
that, when the voltage across the diodes increases, the current that passes through them also
increases.
After we fill the table, we plot the graph for both Silicon diode and Zener diode that is
connected in both forward and reverse biased. In the graph, the x-axis represents VD and Vz while
the y-axis represents ID and IZ. From the graph, we can get the IV curve of the results. For forward
biased Silicon diode and Zener diode, we can get the IV curve at the positive side of the x-axis
and the y-axis graph. While, for reverse biased Zener diode, we can get the IV curve at the
negative side of the x-axis and y-axis of the graph. But for reverse biased Silicon diode, we can
get a straight line at the negative side of the x-axis and y-axis of the graph.

Conclusion :
As a conclusion, we have learnt many new things about this experiment including the
theoretical and the step to conduct this experiment to get and prove the theoretical. The new
things are the demonstration of the measurement of Silicon diode and Zener diode resistance was
practically understood, both forward and reverse biased are observed by using the multimeter.
Which were done by experimenting the voltage and current change. The relation of the current
and voltage are also defined. For the second part of experiment, the demonstration of the forward
and reverse current and voltage characteristic of diode was also been understood. Our personal
learning experience was developed as well. We learnt working with multimeter, breadboard and
DC power supply,resistors, diodes, which are Silicon diode and Zener diode. These are the
essential tools for electrical engineering. Finally, we can understand the theoretical deeper after
we do this diode characteristics experiment.