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Abstractthis
report
explains
the
principles
of
micromanufautring processes which are necessary to produce
micro component in clean room environment. Clean room
principles like classifications and equipments which are used in
order to manufacture micro size products are described as a
process which has been done in a laboratory session in
Tampere university of Technology (TUT).
I. INTRODUCTION
II.
= 10 ( )
(1)
III.
SAFETY CONSIDERATIONS
Figure4. Photolithography
several mJ/cm2 making reproducible litho-processes
impossible.
There are two types of photoresist: positive and negative.
For positive resists, the resist is exposed with UV light
wherever the underlying material is to be removed. In these
resists, exposure to the UV light changes the chemical
structure of the resist so that it becomes more soluble in the
developer. The exposed resist is then washed away by the
developer solution, leaving windows of the bare underlying
material. In other words, "whatever shows, goes." The mask,
therefore, contains an exact copy of the pattern which is to
remain on the wafer. [1](figure3)
Negative resists behave in just the opposite manner.
Exposure to the UV light causes the negative resist to
become polymerized, and more difficult to dissolve.
Therefore, the negative resist remains on the surface
wherever it is exposed, and the developer solution removes
only the unexposed portions. Masks used for negative
photoresists, therefore, contain the inverse (or photographic
"negative") of the pattern to be transferred. The figure below
shows the pattern differences generated from the use of
positive and negative resist. (figure3)
B. Mask alignment
One of the most important steps in the photolithography
process is mask alignment. A mask or "photomask" is a
square glass plate with a patterned emulsion of metal film on
one side. The mask is aligned with the wafer, so that the
pattern can be transferred onto the wafer surface. Each mask
after the first one must be aligned to the previous pattern. If
each subsequent layer is not placed just right on top of the
layer beneath it, however, the resulting structure can be a
disaster, regardless of how carefully the individual steps are
controlled or how good the resolution may be. [1](figure5)
C. Etch process
By etching, the exposed areas of photoresist from the wafer
and the deposited layer respectively (positive resist) are
removed. The etching methods used for MST must be able
to remove material exactly so that tiny micrometer sized
structures like grooves, bridges and beams are obtained. If
an etching method only dissolves a specific material and it
does not react with other materials, it is considered to be
selective. Another property of etching is that it may produce
different results in different directions of material to be
processed. An etching process is isotropic if the etching
speed is the same at every direction of the material,
otherwise, it is anisotropic. Selectivity and directional
properties play a decisive role in micro structures.
a)
Wet etching
Dry etching
LABORATORY PROCESS
VI.
RESULT EVALUATION
VII.
CONCLUSION
[2] http://www.ee.washington.edu/research/microtech/cam/
PROCESSES/PDF%20FILES/Photolithography.pdf
[3] http://en.wikipedia.org/wiki/Etching_%28microfabricati
on%29#Wet_etching
[4] http://en.wikipedia.org/wiki/Reactive-ion_etching
[5] http://www.mrsec.harvard.edu/education/ap298r2004/Er
li%20chen%20Fabrication%20III%20-%20Etching.pdf
ACKNOWLEDGMENT
The work described in this paper has been performed as a
part of Design of Silicon sensors (MIT-4057) by Tampere
University of Technology (TUT).we want to thank Tomi
Rynanen for guiding and instructing the group during the
experiment.
REFERENCES
[1] http://www.ece.gatech.edu/research/labs/vc/theory/phot
olith.html